• Journal of the Korean Ceramic Society
• /
• v.33 no.11
• /
• pp.1292-1300
• /
• 1996

In-site X-ray diffraction measurements under electric field up to 20kV/ cm were carried out on PLZT (x/70/30) with x=7.5, 8.0, 8.5, and 10.5 All of PLZT belonged to cubic phases. At x=7.5, 8.0 and 8.5 PLZT behaved as an antiferroelectric under low electric fields up to 4-8 kV/cm. PLZT became ferroelectric at the higher electric fields. The high-temperature measurements on the dielectric constants of PLZT with x=7.5, 8.0 and 8.5 showed that they were similar to relaxor ferroelectrics and underwent a diffuse phase transition from antiferroelectrics to paraelectrics at 50-7$0^{\circ}C$. Their P-E hysteresis curves confirmed that they were antifer-roelectrics. The broad distribution of Curie points suggests that there is a significant disorder of cations and vacances in the crystal structure of those PLZT due to La-substitution. The variation of the lattice strain of PLZT(10.5/70/30) with electic field was very small and did not show any hysteresis confirming that it was paraelectric. The degree of the electric-induced strain variation decreased as La doping increased. In PLZT(7.5/70/30) the intensity of 110 reflection changes sensitively by applying electric field. Some domains with polarization parallel to [110] appeared to be developed in the field-induced ferroelectric phase of the PLZT.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.58-58
• /
• 1999

The diamond films which can be applied to SOD (silicon-on-diamond) structure were deposited on Si(100) substrate using CO/H2 CH4/H2 source gases by microwave plasma chemical vapor deposition(MPCVD), and SOD structure have been fabricated by poly-silicon film deposited on the diamond/Si(100) structure y low pressure chemical vapor deposition(LPCVD). The phase of the diamond film, surface morpholog, and diamond/Si(100) interface were confirmed by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), and Raman spectroscopy. The dielectric constant, leakage current and resistivity as a function of temperature in films are investigated by C-V and I-V characteristics and four-point probe method. The high quality diamond films without amorphous carbon and non-diamond elements were formed on a Si(100), which could be obtained by CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5%, respectively. The (111) plane of diamond films was preferentially grown on the Si(100) substrate. The grain size of the films deposited by CO/H2 are gradually increased from 26nm to 36 nm as deposition times increased. The well developed cubo-octahedron 100 structure nd triangle shape 111 are mixed together and make smooth and even film surface. The surface roughness of the diamond films deposited by under the condition of CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5% were 1.86nm and 3.7 nm, respectively, and the diamond/Si(100) interface was uniform resistivity of the films deposited by CO/H2 concentration ratio of 15.3% are obtained 5.3, 1$\times$10-9 A/cm, 1 MV/cm2, and 7.2$\times$106 $\Omega$cm, respectively. In the case of the films deposited by CH4/H2 resistivity are 5.8, 1$\times$10-9 A/cm, 1 MV/cm, and 8.5$\times$106 $\Omega$cm, respectively. In this study, it is known that the diamond films deposited by using CO/H2 gas mixture as a carbon source are better thane these of CH4/H2 one.

• Journal of IKEEE
• /
• v.22 no.1
• /
• pp.180-184
• /
• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.12
• /
• pp.1059-1068
• /
• 2016

This paper proposes slow wave structure(SWS) utilized to increase antenna gain of printed dipole antenna(PDA) and to suppress sidelobe level simultaneously, and makes sure of electrical characteristics of the antenna according to parameter variations of components of the slow wave structure. The printed slow wave structure which is composed of a dielectric substrate and a metal rods array is located on excited direction of the PDA, affecting the radiation pattern and its intensity. Parasitic elements of the metal rods are arrayed in narrow consistent gap and have a tendency to gradually decrease in length. In this paper, array interval, element length, and taper angle are selected as the parameter of the parasitic element that effects radiation characteristics. Magnitude and phase distribution of the electrical field are observed and analyzed for each parameter variations. On the basis of these results, while the radiation pattern is analyzed, array methods of parasitic elements of the SWS for high gain characteristics are provided. The proposed antenna is designed to be operated at the Wifi band(5.15~5.85 GHz), and parameters of the parasitic element are optimized to maximize antenna gain and suppress sidelobe. Simulated and measured results of the fabricated antenna show that it has wide bandwidth, high efficiency, high gain, and low sidelobe level.

• Journal of Advanced Marine Engineering and Technology
• /
• v.38 no.1
• /
• pp.48-55
• /
• 2014

These Xenon flashlamp power supply for Ultra Violet has converter with high voltage conversion ratio. General model is composed of transformer with high voltage conversion ratio and voltage doubler rectifier circuit. Purpose of power supply leads dielectric breakdown of Xenon flashlamp and passes current rapidly. When passing current, it has to limit current to avoid over-heat, damage of electrode and acceleration of gas oxidation which are cause of performance degradation of lamps. Generally, inductors and resistors, which are called as "Ballast," are used to limit currents. Generally, Transformer has high turn ratio to make high voltages. But we can get high voltages using the transformer with low turn ratio which is driven with self resonance. Also, an advantage of self resonance is to make a circuit simply through impedance of transformer in resonance frequency which filters output voltage. As using an unique impedance of transformer, the circuit does not need other impedance elements like the ballast. So the power supply assures high efficiency of the arc discharge.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.21 no.5
• /
• pp.486-493
• /
• 2010

This article introduces a novel ultra wideband(UWB) bandpass filter(BPF) with sharp roll-off characteristics in stripline structure. The UWB characteristic is basically obtained from capacitive coupled cross resonator. The resonator has ${\lambda}/2$ length. And at the center of the resonator, two stubs are loaded, one is a ${\lambda}/8$ short-circuited stub and the other is a ${\lambda}/8$ open-circuited stub. The two stubs provide two attenuation poles at lower and upper cutoff frequencies. For input and output lines, two identical capacitively coupled lines have been installed to suppress the unwanted signals in the lower and upper stopbands. The filter has been designed for the U.S. UWB band(3.1~10.6 GHz) with two transmission zeros at 2.4 and 11.1 GHz. The filter has been realized with Low Temperature Core-fired Ceramic(LTCC) green tape which has the dielectric constant of 7.8. Measurement results agree well with HFSS simulation results. Insertion loss less than 0.7 dB and return loss better than 14 dB in the pass band have been measured. The group delay in the center frequency is 0.27 ns and the group delay variation within pass band is less than 0.5 ns. The size of the filter is $6{\times}18{\times}0.6\;mm^3$.

• Journal of the Korean Vacuum Society
• /
• v.15 no.5
• /
• pp.527-533
• /
• 2006

Spinel $LiNi_xMn_{2-x}O_4$ thin films were synthesized up to x = 0.9 by a sol-gel method employing spin-coating. The Ni-substituted films were found to maintain cubic structure at low x but to exhibit tetragonal structure for $x{\geq}0.6$. Such cubic-tetragonal phase transition indicates that $Ni^{3+}(d7)$ ions with low-spin $(t_{2g}^6,e_g^1)$ state occupy the octahedral sites of the compound, thus being subject to the Jahn-Teller distortion. By x-ray photoelectron spectroscopy both $Ni^{2+}$ and $Ni^{3+}$ ions were detected. Optical properties of the $LiNi_xMn_{2-x}O_4$ films were investigated by spectroscopic ellipsometry (SE) in the visible?ultraviolet range. The measured dielectric function spectra by SE mainly consist of broad absorption structures attributed to charge-transfer (CT) transitions, $O^{2-}(2p){\rightarrow}Mn^{4+}(3d)$ for 1.9 $(t_{2g})$ and $2.8{\sim}3.0$ eV $(e_g)$ structures and $O^{2-}(2p){\rightarrow}Mn^{3+}(3d)$ for 2.3 $(t_{2g})$ and $3.4{\sim}3.6$ eV $(e_g)$ structures. Also, sharp absorption structures were observed at about 1.6, 1.7, and 1.9 eV, interpreted as due to d-d crystal-field transitions within the octahedral $Mn^{3+}$ ion. The strengths of these absorption structures are reduced by the Ni substitution. Rapid reduction of the CT transition strength involving the eg states for x = 0.6 is attributed to the reduced wavefunction overlap between the $e_g$ and the $O^{2-}(2p)$ states due to the tetragonal extension of the lattice constant by the Jahn-Teller effect.

• Journal of Korean Society of Environmental Engineers
• /
• v.37 no.1
• /
• pp.60-68
• /
• 2015

The study of waste activated sludge (WAS) solubilization has been increased for sludge volume reduction and enhancing the efficiency of anaerobic digestion. Microwave (MW)-assisted solubilization is an effective method for the solubilization of WAS because this method can lead to thermal, nonthermal effect and ionic conduction by dielectric heating. In this study, the solubilization of WAS by MW heating and conductive heating (CH) was compared and to enhance the MW-assisted solubilization of WAS at low MW output power, chemical agents were applied such as $H_2SO_4$ as the strong acid and $CaCl_2$, NaCl as the ionic materials. Compared to the COD solubilization of WAS by CH, that by MW heating was approximately 1.4, 6.2 times higher at $50^{\circ}C$, $100^{\circ}C$, respectively and the highest COD solubilization of WAS was 10.0% in this study of low MW output power condition. At the same MW output power and reaction time in chemically agents assisted experiments, the COD solubilization of WAS were increased up to 18.1% and 12.7% with the addition of $H_2SO_4$ and NaCl, however, that with the addition of $CaCl_2$ was 10.7%. This result might be due to the fact that the precipitation reaction occurred by calcium ion ($Ca^{2+}$) and phosphate ion (${PO_4}^{3-}$) produced in WAS after MW-assisted solubilization. In this study, $H_2SO_4$ turned out to be the optimal agent for the enhancement of MW efficiency, the addition of 0.2 M $H_2SO_4$ was the most effective condition for MW-assisted WAS solubilization.

• Korean Chemical Engineering Research
• /
• v.49 no.1
• /
• pp.75-82
• /
• 2011

Five different composition UV-cured poly(urethane acrylate-co-acrylic acid) (PU-co-AA) films have been prepared by reacting isophorone diisocyanate(IPDI), polycaprolactone triol(PCLT), 2-hydroxyethyl acrylate(HEA), and different weight ratio trimethylolpropane triacrylate(TMPTA) and acrylic acid(AA) as diluents, and characterized using a Fourier transform infrared spectroscopy(FT-IR). The adhesion properties onto the stainless steel, morphology, mechanical hardness, and electrical property of UV-cured PU-co-AA films were investigated as a function of acrylic acid(AA) content. All the PU-co-AA films are structure-less and the molecular ordering and packing density decreased with increasing content of AA due to the flexible structure and -COOH side chains in AA. The crosscut test showed that PU-co-AA films without AA and with low content of AA showed 0% adhesion(0B) and the adhesion of PU-co-AA films in the range of 40-50% AA increased dramatically as the content of AA increases. The pull-off measurements showed that the adhesion force of PU-co-AA films to stainless steel substrate varied from 6 to 31 kgf /$cm^2$ and increased linearly with increasing AA content. The mechanical hardness also decreased as the content of AA increases. This may come from relatively linear and flexible structure in AA and low crystallinity in PU-co-AA films with higher content of AA. The higher AA-containing PU-co-AA films showed higher dielectric constant due to the increase of polarization by introducing AA monomer. In conclusion, the physical properties of UV-cured PU-co-AA films are strongly dependent upon the content of AA and the incorporation of AA in polyurethane acrylate is very useful way to increase the adhesion strength of UV-curable polymers on the stainless steel substrate.

• KSCE Journal of Civil and Environmental Engineering Research
• /
• v.33 no.1
• /
• pp.329-336
• /
• 2013

The infrastructure of flexible pavement is composed of aggregate subbase, anti-frost layer, and subgrade. In particular, the subgrade performance is affected by climates such as frost action and precipitation. The method of TDR(Time Domain Reflectometry) sensors to measure moisture contents in subgrade layer has been used in the research. Due to the TDR method using dielectric permitivity of soil and water, the sensors can be affected by the low subgrade temperatures. The air temperatures frequently drops below $-20^{\circ}C$ in the winter in Korea. As a result, it is necessary to estimate the accuracy of the TDR moisture sensors in the range of below zero temperatures. In this study, the subgrade temperatures of lower than $-2^{\circ}C$ were extended to evaluate temperature sensitivity of the TDR moisture sensors. The test results revealed that the moisture contents around the sensors were reduced while those of the upper part of specimen showed a tendency to increase as the specimen surface temperature drops below zero under the volumetric moisture contents(VMC) of 20% and 30%. However, the impact of temperature on the function of the sensor at lower water contents was found to be negligible if any.