• Title/Summary/Keyword: Low-frequency surface currents

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Chemical Shift Artifact Correction in MREIT

  • Minhas, Atul S.;Kim, Young-Tae;Jeong, Woo-Chul;Kim, Hyung-Joong;Lee, Soo-Yeol;Woo, Eung-Je
    • Journal of Biomedical Engineering Research
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    • v.30 no.6
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    • pp.461-468
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    • 2009
  • Magnetic resonance electrical impedance tomography (MREIT) enables us to perform high-resolution conductivity imaging of an electrically conducting object. Injecting low-frequency current through a pair of surface electrodes, we measure an induced magnetic flux density using an MRI scanner and this requires a sophisticated MR phase imaging method. Applying a conductivity image reconstruction algorithm to measured magnetic flux density data subject to multiple injection currents, we can produce multi-slice cross-sectional conductivity images. When there exists a local region of fat, the well-known chemical shift phenomenon produces misalignments of pixels in MR images. This may result in artifacts in magnetic flux density image and consequently in conductivity image. In this paper, we investigate chemical shift artifact correction in MREIT based on the well-known three-point Dixon technique. The major difference is in the fact that we must focus on the phase image in MREIT. Using three Dixon data sets, we explain how to calculate a magnetic flux density image without chemical shift artifact. We test the correction method through imaging experiments of a cheese phantom and postmortem canine head. Experimental results clearly show that the method effectively eliminates artifacts related with the chemical shift phenomenon in a reconstructed conductivity image.

Implementation of 10 Gb/s 4-Channel VCSELs Driver Chip for Output Stabilization Based on Time Division Sensing Method (시분할 센싱 기법 기반의 출력 안정화를 위한 10 Gb/s 4채널 VCSELs 드라이버의 구현)

  • Yang, Choong-reol;Lee, Kang-yoon;Lee, Sang-soo;Jung, Whan-seok
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.40 no.7
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    • pp.1347-1353
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    • 2015
  • We implemented a 10 Gb/s 4-channel vertical cavity surface emission lasers (VCSEL) driver array in a $0.13{\mu}m$ CMOS process technology. To enhance high current resolution, power dissipation, and chip space area, digital APC/AMC with time division sensing technology is primarily adopted. The measured -3 dB frequency bandwidth is 9.2 GHz; the small signal gain is 10.5 dB; the current resolution is 0.01 mA/step, suitable for the wavelength operation up to 10 Gb/s over a wide temperature range. The proposed APC and AMC demonstrate 5 to 20 mA of bias current control and 5 to 20 mA of modulation current control. The whole chip consumes 371 mW of low power under the maximum modulation and bias currents. The active chip size is $3.71{\times}1.3mm^2$.

A Study on THz Generation and Detection Characteristics of InGaAs Semiconductor Epilayers (InGaAs 반도체 박막의 테라헤르쯔(THz) 발생 및 검출 특성 연구)

  • Park, D.W.;Kim, J.S.;Noh, S.K.;Ji, Young-Bin;Jeon, T.I.
    • Journal of the Korean Vacuum Society
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    • v.21 no.5
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    • pp.264-272
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    • 2012
  • In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.

Ohmic Heating Characteristics of Fermented Soybean Paste and Kochujang (된장 및 고추장의 Ohmic heating 특성)

  • Cho, Won-Il;Kim, Do-Un;Kim, Young-Suk;Pyun, Yu-Ryang
    • Korean Journal of Food Science and Technology
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    • v.26 no.6
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    • pp.791-798
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    • 1994
  • Ohmic heating is a food processing operation in which heat is internally generated within foods by the passage of alternating electric current. The process enables highly viscous paste foods such as Kochujang, and fermented soybean paste to be heated very fast. In order to develope the novel pasteurization process of paste foods, static Ohmic heating system was built, and heating characteristic during Ohmic heating under various conditions were studied. Electric conductivities of Kochujang and fermented soybean paste at room temperature were 1.865 S/m and 2.510 S/m, respectively and increased linearly with increasing temperature. Specific heating rate was highly dependent on the frequency. The highest heating rate was achieved at 5 KHz for Kochujang and 20 KHz for fermented soybean paste. Uniform heating throughout the sample was achieved during Ohmic heating with low frequency electrical currents, however above 5 KHz frequency, surface temperature was several degrees higher than the bulk.

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