• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2000년도 추계종합학술대회
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• pp.180-185
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• 2000

본 논문에서는 주파수합성기에서 가장 큰 노이즈 Source인 VCO 및 각 단에서 발생하는 Phase Noise의 offset 주파수에 따른 변화를 예측하기위해 2303,15MHz의 주파수합성기를 설계하고 Lascari의 방법을 이용해 분석하였다. 그리고 VCO에서 발생되는 여러 중첩 형태로 된 Phase Noise중 저주파대역에서 문제가 되는 1/f Noise룰 3차 System에서 분석하였다. 3차 System에서는 해석이 복잡하므로 수학적인 분석을 통하여 1/f Noise를 예측한다는 것이 어렵지만 pseudo-damping factor의 도입으로 3차 시스템에서의 1/f Noise variance의 해석이 용이하도록 시도하였고 이를 2차 시스템과 비교하여 분석하였다.

• Journal of electromagnetic engineering and science
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• 제4권3호
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• pp.137-142
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• 2004

In this paper, we present a new current-current negative feedback(CCNF) differential voltage-controlled oscillator (VCO) with 1/f induced low-frequency noise suppressed. By means of the CCNF, the 1/f induced low-frequency noise is removed from the proposed CCNF VCO. Also, high-frequency noise is stopped from being down-converted into phase noise by means of the increased output impedance through the CCNF and the feedback capacitor $C_f. The proposed CCNF VCO represents 11-dB reduction in phase noise at 10 kHz offset, compared with the conventional differential VCO. The phase noise of the proposed CCNF VCO is measured as - 87 dBc/Hz at 10 kHz offset frequency from 5.5-GHz carrier. The proposed CCNF VCO consumes 14.0 mA at 2.0 V supply voltage, and shows single-ended output power of - 12 dBm.

• 한국정보통신학회논문지
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• 제5권4호
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• pp.653-660
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• 2001

본 논문에서는 주파수합성기에서 가장 큰 잡음원인 VCO 및 각 단에서 발생하는 위상잡음 의 offset주파수에 따른 변화를 예측하기 위해 2303.15MHz의 주파수합성기를 설계하고 Lascari의 예측방법 을 이용하여 모델링 하였다. 또한, VCO에서 발생되는 여러 중첩 형태로 된 위상잡음중 저주파대역에서 문제가 되는 1/f noise를 3차 시스템에서 분석하였다. 3차 시스템에서는 해석이 복잡하므로 수학적인 분석을 통하여 1/f noise를 예측한다는 것이 어렵지만 pseudo-damping factor의 도입으로 3차 시스템에서의 1/f noise variance의 해석이 용이 하도록 시도하였고 이를 2차 시스템과 비교.분석하였다. 그 결과, tcxo의 경우 위상잡음이 루프 통과 전 10 kHz offset 주파수에서 -160dBc/Hz, 루프 통과 후 -162.6705dBc/Hz, 100 kHz offset 주파수에서 -180dBc/Hz, 루프 통과 후 -560dBc/Hz로 VCO의 위상잡음에 비해 offset주파수에 따라 루프 통과 후 급격히 감쇠 됨을 알 수 있었다. 2차와 3차 시스템에서의 잡음대역폭과 그 variance factor를 연관하여 3차 시스템에서 의 variance가 2차 시스템의 variance보다 크게 발생함을 알 수 있었다.

• 한국전자파학회논문지
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• 제8권1호
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• pp.94-99
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• 1997

발진기의 위상잡음에 영향윤 주는 요인은 여러 가지가 있다. 그러나 발진기의 위상잡음은 주로 캐리어(carrier)와 l/f의 특성을 잦는 DC 근처 저주파 잡음과의 혼합으로 발생되므로, 저주파 플리커 잡음에 의해 지배된다. 본 논문에서는 능동 바이어스 회로로 구현된 저주파 궤환회로를 이용하여 플리커 잡음의 영향을 최소화함으로써 발진기의 위상잡음을 줄이는 기법을 제안하고, DBS 수신기에 사용 가능한 DRO를 제작하였다. 제작된 DRO의 위상잡음을 측정한 갤과 10 kHz 옵셋 주파수에서 약 -92 dBc/Hz로 제안된 방볍이 상당히 효과적임을 확인 하였다

• ETRI Journal
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• 제36권3호
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• pp.510-513
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• 2014

A Q-band pHEMT image-rejection low-noise amplifier (IR-LNA) is presented using inter-stage tunable resonators. The inter-stage L-C resonators can maximize an image rejection by functioning as inter-stage matching circuits at an operating frequency ($F_{OP}$) and short circuits at an image frequency ($F_{IM}$). In addition, it also brings more wideband image rejection than conventional notch filters. Moreover, tunable varactors in L-C resonators not only compensate for the mismatch of an image frequency induced by the process variation or model error but can also change the image frequency according to a required RF frequency. The implemented pHEMT IR-LNA shows 54.3 dB maximum image rejection ratio (IRR). By changing the varactor bias, the image frequency shifts from 27 GHz to 37 GHz with over 40 dB IRR, a 19.1 dB to 17.6 dB peak gain, and 3.2 dB to 4.3 dB noise figure. To the best of the authors' knowledge, it shows the highest IRR and $F_{IM}/F_{OP}$ of the reported millimeter/quasi-millimeter wave IR-LNAs.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.1-6
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• 2006

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.5-6
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• 2005

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• 한국소음진동공학회논문집
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• 제16권9호
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• pp.958-963
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• 2006

The motion of a system composed of a plate, constant springs and varying dampers is considered when the system is subject to harmonic force. Letting the frequencies of harmonic force and damper variation $f_1\;and\;f_2$, respectively, the displacement at the center of the plate has the strongest component at frequency $f_1$. The angular displacement of the plate has strong components at $f_1-f_2$ and the natural frequency of the rotational mode of the system. If these two frequencies coincide, the plate oscillates with almost single frequency and a large amplitude. These results can be applied to development of a moment shaker with low frequencies.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2006년도 춘계학술대회논문집
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• pp.81-85
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• 2006

The motion of a system composed of a plate, constant springs and varying dampers is considered when the system is subject to harmonic force. Letting the frequencies of harmonic force and damper variation ${\Large f}_1\;and\;{\Large f}_2$, respectively, the displacement at the center of the plate has the strongest component at frequency ${\Large f}_1$. The angular displacement of the plate has strong components at ${\Large f}_1-{\Large f}_2$, and the natural frequency of the rotational mode of the system. If these two frequencies coincide, the plate oscillates with almost single frequency and a large amplitude. These results can be applied to development of a moment shatter with low frequencies.

• 전기전자학회논문지
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• 제3권1호
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• pp.39-49
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• 1999

This paper describes a 1 GHz, low-phase-noise CMOS fractional-N frequency synthesizer with an integrated LC VCO. The proposed frequency synthesizer, which uses a high-order delta-sigma modulator to suppress the fractional spurious tones at all multiples of the fractional frequency resolution offset, has 64 programmable frequency channels with frequency resolution of $f_ref/64$. The measured phase noise is as low as -110 dBc/Hz at a 200 KHz offset frequency from a carrier frequency of 980 MHz. The reference sideband spurs are -73.5 dBc. The prototype is implemented in a $0.5{\mu}m$ CMOS process with triple metal layers. The active chip area is about $4mm^2$ and the prototype consumes 43 mW, including the VCO buffer power consumption, from a 3.3 V supply voltage.