• 제목/요약/키워드: Low-frequency Range

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루프 군지연을 이용한 저위상 잡음 5 GHz 전압제어 유전체 공진기 발진기 설계 (A Design of a 5 GHz Low Phase Noise Voltage Tuned Dielectric Resonator Oscillator Using Loop Group Delay)

  • 손범익;정해창;염경환
    • 한국전자파학회논문지
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    • 제25권3호
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    • pp.269-281
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    • 2014
  • 본 논문에서는 루프 군지연을 이용하여 저위상 잡음을 갖는 5 GHz 전압제어 유전체 공진기 발진기(VTDRO: Voltage Tuned Dielectric Resonator Oscillator)의 체계적인 설계를 제안하였다. 설계된 발진기는 폐루프 구조로 공진부, 위상천이부, 증폭부로 구성된다. 먼저 기준 전압제어 유전체 공진기 발진기를 제작하고, 루프 군지연을 측정 후, 전기적 주파수 조정 범위 및 위상 잡음을 측정하였다. 기준 전압제어 유전체 공진기 발진기의 측정 결과로부터, 루프 군지연만 조정될 경우 새로운 전압제어 유전체 공진기 발진기의 전기적 주파수 조정 범위 및 위상 잡음을 수식적으로 예측할 수 있다. 루프군지연이 높을수록 위상 잡음은 개선되고, 전기적 주파수 조정 범위는 좁아지게 된다. 이러한 루프 군지연은 주로 공진부에 의해 결정된다. 따라서 높은 군지연 특성을 갖는 공진부 설계방법의 체계적인 절차를 제안하였다. 측정 결과, 루프군 지연은 약 700 nsec를 보였다. 또한, 5 GHz의 발진 주파수에서 위상 잡음은 수식으로부터 도출한 값과 근사한 100 kHz offset 주파수에서 -154.5 dBc/Hz를 얻었다. 전기적 주파수 조정 범위는 0~10 V의 조정 전압에서 448 kHz를 보였으며, 출력 전력은 약 4.39 dBm을 보였다.

고주파 소자용 $BaTi_4O_9$ 박막의 미세구조와 유전특성 연구 (Microstructure and Dielectric Properties of $BaTi_4O_9$ Thin Film for Microwave Devices)

  • 장보윤;이석진;남산;이확주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.125-129
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    • 2004
  • [ $BaTi_4O_9$ ] thin film were grown on $Pt/Ti/SiO_2/Si$ substrate using rf magnetron sputter, and the microstructure and dielectric properties of the thin films were investigated. For the film grown at $350^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$, the $BaTi_5O_{11}$ Phase was formed. However, the $BaTi_4O_9$ phase was formed when the growing temperature exceeded $450^{\circ}C$ The dielectric constant of the $BaTi_4O_9$ thin film grown at $550^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$ was about 40 at low frequency range($100kHz{\sim}1MHz$) and 36 at microwave range($1{\sim}10GHz$) which is very close to that of the bulk $BaTi_4O_9$ phase. The dissipation factor was very low, about 0.005 at low frequency as well as microwave range.

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Increasing the Range of Modulation Indices with the Polarities of Cells and Switching Constraint Reliefs for the Selective Harmonic Elimination Pulse Width Modulation Technique

  • Najjar, Mohammad;Iman-Eini, Hossein;Moeini, Amirhossein
    • Journal of Power Electronics
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    • 제17권4호
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    • pp.933-941
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    • 2017
  • In this paper an improved low frequency selective harmonic elimination-PWM (SHE-PWM) technique for Cascaded H-bridge (CHB) converters is proposed. The proposed method is able to eliminate low order harmonics from the output voltage of the converter for a wide range of modulation indices. To solve SHE-PWM equations, especially for low modulation indices, a modified method is used which employs either the positive or negative voltage polarities of H-bridge cells to increase the freedom degrees of each cell. Freedom degrees of the switching angles are also used to increase the range of available solutions for non-linear SHE equations. The proposed SHE methods can successfully eliminate up to $25^{th}$ harmonic from a 7-level output voltage by using just nine switching transitions or a 150 Hz switching frequency. To confirm the validity of the proposed method, simulation and experimental results have been presented.

Low Phase Noise CMOS VCO with Hybrid Inductor

  • Ryu, Seonghan
    • IEIE Transactions on Smart Processing and Computing
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    • 제4권3호
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    • pp.158-162
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    • 2015
  • A low phase noise CMOS voltage controlled oscillator(VCO) for multi-band/multi-standard RF Transceivers is presented. For both wide tunability and low phase noise characteristics, Hybrid inductor which uses both bondwire inductor and planar spiral inductor in the same area, is proposed. This approach reduces inductance variation and presents high quality factor without custom-designed single-turn inductor occupying large area, which improves phase noise and tuning range characteristics without additional area loss. An LC VCO is designed in a 0.13um CMOS technology to demonstrate the hybrid inductor concept. The measured phase noise is -121dBc/Hz at 400KHz offset and -142dBc/Hz at 3MHz offset from a 900MHz carrier frequency after divider. The tuning range of about 28%(3.15 to 4.18GHz) is measured. The VCO consumes 7.5mA from 1.3V supply and meets the requirements for GSM/EDGE and WCDMA standard.

천해 저주파 잔향음 예측모델 (Shallow Water Low-frequency Reverberation Model)

  • 김남수;오선택;나정열
    • 한국음향학회지
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    • 제21권8호
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    • pp.679-685
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    • 2002
  • 천해에서의 저주파 단상태 잔향음 모델 (L-HYREV: Low-frequency Hanyang univ. Reverberation model)을 개발하였다. 음선이론 (ray-theory)에 기초한 전파모델은 해저 내로 투과되는 음파에 대한 효과를 적절하게 고려할 수 없으므로, 해저 내 상호작용을 계산할 수 있는 전파모델이 필요하다. 따라서 본 논문에서는 RAM(Range dependent Acoustic Model)을 이용해서 전달손실을 계산 후, 다중경로 확장모델 (multi-path expansion model)을 이용해서 산출한 전달손실을 보정하였다. 모델의 검증을 위하여 GSM (generic sonar model) 잔향음 모의 신호 및 실측 잔향음 신호와 비교하였으며, 비교 결과 GSM보다 L-HYREV 모델이 저주파 잔향음 예측에 적합함을 확인할 수 있다.

Design Guidelines for a Capacitive Wireless Power Transfer System with Input/Output Matching Transformers

  • Choi, Sung-Jin
    • Journal of Electrical Engineering and Technology
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    • 제11권6호
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    • pp.1656-1663
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    • 2016
  • A capacitive wireless power transfer (C-WPT) system uses an electric field to transmit power through a physical isolation barrier which forms a pair of ac link capacitors between the metal plates. However, the physical dimension and low dielectric constant of the interface medium severely limit the effective link capacitance to a level comparable to the main switch output capacitance of the transmitting circuit, which thus narrows the soft-switching range in the light load condition. Moreover, by fundamental limit analysis, it can be proved that such a low link capacitance increases operating frequency and capacitor voltage stress in the full load condition. In order to handle these problems, this paper investigates optimal design of double matching transformer networks for C-WPT. Using mathematical analysis with fundamental harmonic approximation, a design guideline is presented to avoid unnecessarily high frequency operation, to suppress the voltage stress on the link capacitors, and to achieve wide ZVS range even with low link capacitance. Simulation and hardware implementation are performed on a 5-W prototype system equipped with a 256-pF link capacitance and a 200-pF switch output capacitance. Results show that the proposed scheme ensures zero-voltage-switching from full load to 10% load, and the switching frequency and the link capacitor voltage stress are kept below 250 kHz and 452 V, respectively, in the full load condition.

낮은 위상잡음을 갖는 X-band 전압제어 유전체 공진형 발진기의 설계 및 제작 (Design and Fabrication of a X-band Voltage Control Dielectric Resonator Oscillator with The Low Phase Noise)

  • 박창현;최병하
    • 대한전자공학회논문지TC
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    • 제41권5호
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    • pp.69-76
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    • 2004
  • 본 논문에서는 낮은 위상잡음을 갖는 X-band용 전압 제어 유전체 공진형 발진기를 설계ㆍ제작하였다. 위상잡음을 개선하기 위하여 저잡음 특성과 프리커 잡음이 낮은 MESFET과 높은 선택도와 Q값이 큰 유전체 공진기를 사용하였다. 또한 바렉터 다이오드는 부하의 영향을 줄이기 위해서 Q-factor가 매우 큰 것을 사용하여야 하며, 전압에 대한 주파수 변동이 선형이 되도록 하기 위해 다이오드의 Gamma가 큰 바렉터 다이오드를 사용하였다. 구현된 회로는 최적의 성능을 갖도록 회로 시뮬레이터인 ABS를 사용하였다. 제작된 전압제어 유전체 공진형 발진기의 특성을 측정한 결과, 중심 주파수 12.05 ㎓에서 5.8㏈m의 출력 파워와 -30 ㏈c의 고조파 억압과 100㎑ offest 주파수에서 -114 ㏈c의 위상잡음 특성을 얻을 수 있었으며, 바렉터 다이오드에 인가되는 전압의 변화에 따른 주파수 동조 범위는 15.2 ㎒를 얻었고 이때의 전력 평탄도는 -0.2㏈ 의 우수한 성능을 얻을 수 있었다. 제작된 발진기는 X-band에서 국부 박진기로 이용될 수 있음을 확인하였다.

Thin-Shell Approach for Elastic Wave Propagation in a Pipe with Liquid

  • Kim Jin Oh;Rose Joseph L.
    • Journal of Mechanical Science and Technology
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    • 제19권5호
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    • pp.1087-1094
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    • 2005
  • This paper presents the validity and limitation of the thin-shell approach for the analysis of elastic wave propagation in a pipe with nonviscous liquid. The phase velocities calculated by the thin-shell approach were compared with those calculated by the thick-cylinder approach. In contrast to the case of the empty pipe, where only two modes were obtained and the first mode was calculated in a limited frequency range, the results for the liquid-filled pipe exhibits a large number of modes due to the large number of branches of the apparent liquid mass. Several of the lowest modes of the waves in a liquid-filled pipe were calculated for various pipe thicknesses in a low frequency range. The thin-shell approach was valid for a reasonable range of pipe thicknesses.

DC~7GHz 초광대역 GaAs MESFET 증폭기 (A DC~7GHz Ultrabroad-Band GaAs MESFET)

  • 윤영철;장익수
    • 전자공학회논문지A
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    • 제30A권3호
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    • pp.34-42
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    • 1993
  • An analytic approach to wide-band amplification using simplified equivalent MESFET modeling has enabled an ultrabroad-band flat-gain amplifier from DC to microwave. The developed lossy-match ultrabroad-band amplifier operates as a RC coupled circuit in the low-frequency range and lossless impedance matching circuit in the microwave frequency range with gain compensation circuits. The reduced gain caused by external resistors is compensated using 2-stage cascade amplification, and the gain of designed unit is 12.5.+-.1dB from the vicinity of DC to 7GAz. The experimental gain characteristics are good agreement with computer simulated results. The input and output VSWRs are measured under 2:1 over the operating frequency range, and the gain goes down over 15dBrange with various gate bias voltages.

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Investigations of Temperature Effect on the Conduction Mechanism of Electrical Conductivity of Copolymer/Carbon Black Composite

  • El Hasnaoui, M.;Kreit, L.;Costa, L.C.;Achour, M.E.
    • Applied Microscopy
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    • 제47권3호
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    • pp.121-125
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    • 2017
  • This study deals the prediction of temperature effect on low-frequency dispersion of alternating current (AC) conductivity spectra of composite materials based on copolymer reinforced with carbon black (CB) particles. A sample of ethylene butylacrylate loaded with 13% of CB particles were prepared and investigated using the impedance spectroscopy representation in the frequency range from 40 Hz to 0.1 MHz and temperature range from $20^{\circ}C$ to $125^{\circ}C$. The dielectric constant, ${\varepsilon}^{\prime}$, and dielectric losses, ${\varepsilon}^{{\prime}{\prime}}$, were found to decrease with increasing frequency. The frequency dependence of the AC conductivity follows the universal power law with a large deviation in the high frequency region, the positive temperature coefficient in resistivity effect has been observed below the melting temperature which makes this composite potentially remarkable for industrial applications.