• 한국결정성장학회지
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• 제8권4호
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• pp.640-644
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• 1998

Sb/SiC(4H) 및 Ti/SiC(4H) 쇼트키 다이오드(SBD)를 제작하여 그 특성을 조사하였다. 용량-전압(C-V) 측정으로부터 얻은 n-형 SiC(4H)의 주개(donor) 농도는 약 $2.5{\times}10 ^{17}{\textrm}cm^{-3}$이었다. 순방향 전류-전압(I-V) 특성의 기울기로부터 얻은 Sb/SiC(4H) 쇼트키 다이오드의 이상계수는 1.31이었고, 역방향 항복전장(breakdown field)은 약 4.4$\times$102V/cm 이었다. 용량-전압(C-V) 측정으로부터 얻은 Sb/SiC(4H) SBD의 내부전위(built-in potential) 및 쇼트키 장벽 높이는 각각 1.70V 및 1.82V이었다. Sb/SiC(4H)의 장벽높이 1.82V는 Ti/SiC(4H)의 0.91V보다 높았다. 그러나 Sb/SiC(4H)의 전류밀도와 역방향 항복전장은 Ti/SiC(4H)의 것보다 낮았다. Ti/SiC(4H)는 물론 Sb/SiC(4H) 쇼트키 다이오드는 고전력 전자소자로서 유용하다.

• 한국결정성장학회지
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• 제34권1호
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• pp.1-7
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• 2024

β-Ga₂O₃는 ~4.8 eV의 넓은 밴드 갭과 8 MV/cm의 높은 항복 전압을 가지는 물질로 전력소자의 응용 분야에서 많은 주목을 받고 있다. 또한, 대표적인 WBG 반도체 소재인 SiC, GaN, 다이아몬드 등과 비교했을 때, 높은 성장률과 낮은 제조 비용으로 단결정 성장이 가능하다는 장점을 가진다[1-4]. 본 연구에서는 다중 슬릿 구조를 이용한 EFG(Edge-defined Film-fed Growth) 법을 통해 SnO₂ 0.3 mol% 도핑된 10 mm 두께의 β-Ga₂O₃ 단결정을 성장시키는 데에 성공했다. 성장 방향과 성장 면은 각각 [010]/(001)로 설정하였으며 성장 속도는 약 12 mm/h이다. 성장시킨 β-Ga₂O₃ 단결정은 다양한 결정면(010, 001, 100, ${\bar{2}}01$)으로 절단하여 표면 가공을 진행하였다. 가공이 완료된 샘플은 XRD, UV/VIS/NIR Spec., Mercury Probe, AFM, Etching 등의 분석을 통해 결정면에 따른 특성을 비교하였다. 본 연구는 고전압 및 고온 응용 분야에서 전력반도체 기술의 발전에 기여할 것으로 기대되며 더 나은 특성의 기판을 선택하는 것은 소자의 성능과 신뢰성을 향상시키는데에 중요한 역할을 할 것이다.

• Current Optics and Photonics
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• 제6권2호
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• pp.143-150
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• 2022

Anti-resonant hollow-core photonic crystal fiber (AR-HCF) has unique advantages, such as low nonlinearity and high damage threshold, which make it a promising candidate for high-power laser delivery at distances of tens of meters. However, due to the special structure, optical properties such as mode-field profile and bending loss of hollow-core fibers are different from those of solid-core fibers. These differences have limited the widespread use of AR-HCF in practice. In this paper we conduct numerical analysis of AR-HCFs with different structural parameters, to analyze their influences on an AR-HCF's optical properties. The simulation results show that with a 23-㎛ air-core diameter, the fundamental mode profile of an AR-HCF can well match that of the widely used Nufern's 20/400 fiber, for nearly-single-mode power delivery applications. Moreover, with the ratio of cladding capillary diameter to air-core diameter ranging from 0.6 to 0.7, the AR-HCF shows excellent optical characteristics, including low bending sensitivity while maintaining single-mode transmission at the same time. We believe these results lay the foundation for the application of AR-HCFs in the power delivery of high power fiber laser systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.201-206
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• 2004

We have performed computer simulation and experiment to obtain electro-optic characteristics of reflective hybrid aligned nematic (R-HAN) cell driven by fringe field, in which the cell consists of polarizer, optical compensation film, LC layer and reflector. Conventional R-HAN cell driven by fringe field using only the LC layer shows high wavelength dispersion at dark-state and thus viewing angle characteristic is strongly wavelength-dependent. In order to improve this demerit, we added one optical compensation film to conventional R-HAN cell. The display with optimized cell parameters shows low wavelength dispersion at dark-state and exhibits a wide viewing angle without the occurrence of grey scale inversion over a wide range of viewing angles and the contrast ratio greater than 5 over exists about 120$^{\circ}$ in vortical direction and 160$^{\circ}$in horizontal direction. Experimental results show good agreements with theoretical results and fast response time.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1991년도 추계학술발표회논문집
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• pp.64-68
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• 1991

It happened that there was a sudden peak with the capacity of change, when I measured the capacity of change, cubical expansion and Thermally Stimulated Current on the Cross - Linked Polythylene. Crystal melting began at 375 K and changed into formaless shapeless at 380 K. The conduct of a particle on the surfase of dipole, electron trap was founded to be ion conduction nature under the low electronic field, wherase, the electron nature under the high electronic field. Consequentity, under the semi-conduction layer electronic a particle was injected to inter-fase and accumulated for a time and appeared to be TSC.

• Design & Manufacturing
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• 제2권4호
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• pp.44-47
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• 2008

The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision techniques and has an aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper we deals with the development of the magnetic abrasive with the use of Sr-Ferrite. In this development, abrasive grain A has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Sr-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only A abrasive and Sr-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From SEM analysis, we found that A abrasive and Sr-Ferrite were strongly bonding with each other.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.763-765
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• 1988

Thermally stimulated current, cubical expension, capability change were measured by temperature variation. According to the capability change, TSC peak value was increased. We found that the crystal dissolution is 375 K and amorphous state becomes 388K. Charged partical behavior in the dipole and electronic trop were found iomic conduction in the low field and electronic conduction in the high field. Charged particle in the semiconduction storey was aceumulated in the interface by electron injection which can be arise TSC.

• 한국안전학회지
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• 제18권2호
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• pp.46-49
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• 2003

The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision techniques and has m aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper we deals with the development of the magnetic abrasive with the use of Ba-Ferrite. In this development, abrasive grain WA has been made by using the min bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Ba-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only WA abrasive and Ba-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From SEM analysis, we found that WA abrasive and Ba-Ferrite were strongly bonding with each other.

• 한국세라믹학회지
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• 제48권4호
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• pp.307-311
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• 2011

Solid solutions of the (1-x)$BiFeO_3-xSrTiO_3$ ceramic system (x = 0~0.4) are explored here in attempts to obtain multiferroic properties in these systems. The polarization-electric field hysteresis, magnetization-magnetic field curves, and dielectric properties are also characterized. This solid-solution system shows a crystal structural transition from a noncentrosymmetric (R3c) structure to a centrosymmetric (Pm-3m) structure at 0.3 < x < 0.4. The solid solution ceramic shows unsaturated M-H behavior and low remanent magnetization over the composition region of 0.1 ${\leq}$ x ${\leq}$ 0.3. The $0.7BiFeO_3-0.3SrTiO_3$ system shows the largest value of $M_s$ at 0.17 emu/g and the smallest value of $H_c$ at 1.06 kOe. The P-E hysteresis curves were not saturated under an electric field as high as E = 70 kV/cm. This system is considered to have multiferroic characteristics in the composition range of 0.1 ${\leq}$ x ${\leq}$ 0.3.