• 제목/요약/키워드: Low-Work Function

검색결과 377건 처리시간 0.033초

선박건조용 다기능 핸들링로봇의 설계 (Design of ship dry multi-function handling robot)

  • 권광진;전재억;정진서;황영모;박후명;하만경
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2004년도 춘계학술대회 논문집
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    • pp.231-234
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    • 2004
  • Ratio that robot occupies is low level worldwide fairly in suspension wire, electricity electron and neutralization learning industry and domestic industry of this is staring in average love. Can speak that grafting of robotic machine and neutralization learning industry is high in terms of side of creation of the added value or progress of technology rightly hereupon. This research raises or designed multi-function handling robot that can make welding, assembly conveniently catching large size work water

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Carrier Transport of Quantum Dot LED with Low-Work Function PEIE Polymer

  • Lee, Kyu Seung;Son, Dong Ick;Son, Suyeon;Shin, Dong Heon;Bae, Sukang;Choi, Won Kook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.432.2-432.2
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    • 2014
  • Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

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Interference Suppression Using Principal Subspace Modification in Multichannel Wiener Filter and Its Application to Speech Recognition

  • Kim, Gi-Bak
    • ETRI Journal
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    • 제32권6호
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    • pp.921-931
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    • 2010
  • It has been shown that the principal subspace-based multichannel Wiener filter (MWF) provides better performance than the conventional MWF for suppressing interference in the case of a single target source. It can efficiently estimate the target speech component in the principal subspace which estimates the acoustic transfer function up to a scaling factor. However, as the input signal-to-interference ratio (SIR) becomes lower, larger errors are incurred in the estimation of the acoustic transfer function by the principal subspace method, degrading the performance in interference suppression. In order to alleviate this problem, a principal subspace modification method was proposed in previous work. The principal subspace modification reduces the estimation error of the acoustic transfer function vector at low SIRs. In this work, a frequency-band dependent interpolation technique is further employed for the principal subspace modification. The speech recognition test is also conducted using the Sphinx-4 system and demonstrates the practical usefulness of the proposed method as a front processing for the speech recognizer in a distant-talking and interferer-present environment.

타원비수를 이용한 고차 저역통과 필터의 수동 및 능동회로 설계 (Passive and Active Circuits design of High Order Low-pass Filter using Elliptic Function)

  • 윤창훈;신건순;김동용
    • 대한전기학회논문지
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    • 제36권2호
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    • pp.140-147
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    • 1987
  • In this paper, seven-order elliptic low-pass passive network is synthesized by using doublyterminated ladder network is directly transformed into the active network which has the advantage of low sensitivity and can be realized conveniently. The circuit simulation results of passive network and active network synthesized with FDNR and Leap-frog technique are compared, and it is proved that the two rest work has the same characteristics.

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NEXAFS 분광법에 의한 Alq3/Ba과 Alq3/Au의 계면에서의 전자 천이에 관한 연구 (A Study on the Electron Transfer at the Alq3/Ba and Alq3/Au Interfaces by NEXAFS Spectroscopy)

  • 임수용;주성후;양재웅
    • 한국표면공학회지
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    • 제45권1호
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    • pp.15-19
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    • 2012
  • Tris(8-quinolinolato)aluminum(III); $Alq_3$ has been frequently used as an electron transporting layer in organic light-emitting diodes. Either Ba with a low work function or Au with a high work function was deposited on $Alq_3$ layer in vacuum. And then, the behaviors of electron transition at the $Alq_3$/Ba and $Alq_3$/Au interfaces were investigated by using the near edge x-ray absorption fine structure (NEXAFS) spectroscopy. In the each interface, the energy levels of unoccupied obitals were assigned as ${\pi}^*$(LUMO, LUMO+1, LUMO+2 and LUMO+3) and ${\sigma}^*$. And the relative intensities of these peaks were investigated. In an oxygen atom composing $Alq_3$ molecule, the relative intensities for a transition from K-edge to LUMO+2 were largely increased as Ba coverage (${\Theta}_{Ba}$, 2.7 eV) with a low work function was in-situ sequentially increased on $Alq_3$ layer. In contrast, the relative intensities for the LUMO+2 peak were reduced as Au coverage (${\Theta}_{Au}$, 5.1 eV) with a high work function were increased on $Alq_3$ layer. This means that the electron transition by photon in oxygen atom which consists in the unoccupied orbitals in $Alq_3$ molecule, largely depends on work function of a metal. Meanwhile, in the case of electron transition in a carbon atom, as ${\Theta}_{Ba}$ was increased on $Alq_3$, the relative intensity from K-edge to ${\pi}_1{^*}$ (LUMO and LUMO+1) was slightly decreased, and from K-edge to ${\pi}_2{^*}$ (LUMO+2 and LUMO+3) was somewhat increased. This rising of the energy state from ${\pi}_1{^*}$ to ${\pi}_2{^*}$ exhibits that electrons provided by Ba would contribute to the process of electron transition in the $Alq_3$/Ba interfaces. As shown in above observation, the analyses of NEXAFS spectra in each interface could be important as a basic data to understand the process of electron transition by photon in pure organic materials.

독거노인의 인지기능 및 삶의 만족도 위험요인 탐색 (Risk Factors to Cognitive Function and Life Satisfaction in Elderly Living Alone)

  • 이지영
    • 스트레스연구
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    • 제26권4호
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    • pp.259-267
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    • 2018
  • 본 연구는 독거노인의 인지기능과 삶의 만족도에 영향을 미치는 위험요인을 탐색하고자 하였다. 전국표본추출로 실시된 2014년도 노인실태조사 원시자료 중에서 만 65세 이상인 독거노인 2,449명의 자료를 분석하였다. 인지기능의 위험요인은 고령과 사별경험, 무학력, 운동 안함, 낮은 사회문화 활동만족도로 확인되었다. 삶의 만족도 위험요인은 이혼/미혼/별거경험, 무학력, 미취업, 부정적 건강평가와 우울진단, 운동 안함, 정서적 학대, 경제적 학대, 재정적 방임 경험과 낮은 인지기능 수준으로 확인되었다. 이는 고령의 사별한 독거노인 대상의 적극적인 인지기능 검사 및 강화 프로그램, 사회문화활동 참여를 위한 네트워킹, 우울 예방과 운동 및 건강증진 프로그램, 노인학대 예방을 위한 사회적 노력이 필요함을 시사해준다.

Nb/Ni Clad 전극을 이용한 고효율 CCFL 개발 (Development of CCFL with Nb/Ni Gad Electrode for high efficiency)

  • 박기덕;양승수;박두성;김서윤;임영진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.441-443
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    • 2005
  • According as CCFL(Cold Cathode Fluorescent lamp) of light source in Backlight unit for Note PC (Personal computer) is presently needed to low power consumption and long life time, the development focus of CCFL is going on the discharge gas, phosphor and electrode material. First of all, discharge voltage characteristic of CCFL is closely connected with electrode material For low discharge voltage, the characteristic of electrode material is needed to low work function, low sputtering ratio and superior manufacturing property. We developed new CCFL with Nb/Ni Clad electrode superior to conventional CCFL. Because Nb/Ni Clad electrode with Ni material and Nb material, the electrical characteristic is superior to other electrode materials. The electrode of Nb/Ni Clad is composed that Ni of outside material has superior manufacturing property and Nb of inside material has low work function. Nb/Ni Clad of new electrode material is made by process of Rolling mill at high pressure and heat treatment. We compared electrical characteristic of Nb/Ni clad electrode with conventional Mo electrode by measurement. Mo electrode and Nb/Ni Clad electrode of cup type with diameter 1.1 mm and length 3.0mm are used to this experiment. Material content of Mo electrode is Mo 100%. But, Nb/Ni Clad electrode is composed by content of Nb 40% and Ni 60%. The result of comparison measurement between new CCFL with Nb/Ni Clad electrode and conventional CCFL was appeared that CCFL with Nb/Ni Clad electrode had superior characteristic than conventional CCFL. As a result of experiment, we completed Note PC with low power consumption and long life time by application of new CCFL with Nb/Ni Clad electrode.

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High Performance OLEDs with a New Device Structure

  • Noh, Jeoung-Kwen;Kang, Min-Soo;Kim, Jong-Seok;Lee, Jung-Hyoung;Ham, Yun-Hye;Kim, Jung-Bum;Son, Seh-Wan
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.1011-1013
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    • 2007
  • We report the fabrication of a new inverted OLED devices having potential to be used for both AMOLED and lighting applications.

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비정질 실리콘 태양전지 후면 반사막 적용을 위한 저온 증착된 AZO 박막 특성에 관한 연구

  • Kang, Junyoung;Park, Hyeongsik;Yi, Junsin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.315-315
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    • 2016
  • The hydrogenated amorphous silicon (a-Si:H) thin film solar cells using n/Al or n/Ag/Al back reflector have low short circuit current (Jsc) due to high absorption coefficients of Al or work function difference between n-layer and the metal. In this article, we utilized aluminum doped zinc oxide (AZO) to raise the internal reflectance for the improvement of short current density (Jsc) in a-Si:H thin film solar cells. It was found that there was a slight increase in the reflectance in the long wavelength range at the process temperature of 125oC due to improved crystalline quality of the AZO back reflector. The optical band gap (Eg) and work function were affected by the temperature and so did the internal reflectance. The increased internal reflectance within the solar cell resulted in Jsc of 14.94 mA/cm2 and the efficiency of 8.84%. Jsc for the cell without back reflector was 12.29 mA/cm2.

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