• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.50-53
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• 1994

In this study. we report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, GaInN, AlGaN/GaN double hetero-structure (DH) and AlGaN/GaInN DH which grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate using an AIN buffer-layer. The peak wavelength of the stimulated emission at RT from AlGaN/GaN DH is 370nm and the threshold of excitation pumping power density (P$\_$th/) is about 89㎾/$\textrm{cm}^2$, and they from AlGaN/GaInN DH are 403nm and 130㎾/$\textrm{cm}^2$, respectively. The P$\_$th/ of AlGaN/GaN and AlGaN/GaInN DHs are lower than the bulk materials due to optical confinement within the active layers of GaN and GaInN. The optical gain and the polarization of stimulated emission characteristics are presented in this article.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.324-327
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• 2000

In this paper, the effects of negative and positive bias stress on p-channel poly-Si TFT's fabricated by excimer laser annealing have been investigated After positive and negative bias stress, transcon-ductance(g$_{m}$) is increased because of a reduction of the effective channel length due to the injected electron in the gate oxide. In the positive bias stress, the injection of hole is appeared after stress time of 3600sec and g$_{m}$ is decreased. On the other hand, the gate voltage at the maximum g$_{m}$, S-swing and threshold voltage(V$_{th}$) are decreased because of the interface state generation due to the injection of electrons into the gate oxide.e.ide.e.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.62-63
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• 2006

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of $30cm2/V{\cdot}s$, on/off ratio of 105 and threshold voltage of 5 V.

• Journal of the Optical Society of Korea
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• 제5권3호
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• pp.83-89
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• 2001

Room temperature quasi-continuous operation is achieved near 1556 nm with threshold current as low as 2.2 mA from a 5.6-${\mu}{\textrm}{m}$ oxide-aperture vertical-cavity surface-emitting laser. Wafer fusion techniques are employed to combine the GaAs/AlGaAs mirror and the InP-based InGaAs/InGaAsP active layer. In this structure, an $Al_x/O_y$/GaAs distributed bragg reflector and intra-cavity contacts are used to reduce free carrier absorption.

• 한국세라믹학회지
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• 제49권4호
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• pp.337-341
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• 2012

Mechanochemical processing (MCP) involves several high-energy collisions of powder particles with the milling media and results in the increased reactivity/sinterability of powder. The present paper shows results of mechanochemical processing (MCP) of silicon nitride powder mixture with the relevant sintering additives. The effects of MCP were studied by structural changes of powder particles themselves as well as by the resulting sintering/densification ability. It has been found that MCP significantly enhances reactivity and sinterability of the resultant material: silicon nitride ceramics could be pressureless sintered at $1500^{\circ}C$. Nevertheless, a degree of a silicon nitride crystal lattice and powder particle destruction (amorphization) as detected by XRD studies, is limited by the specific threshold. If that value is crossed then particle's surface damage effects are prevailing thus severe evaporation overdominates mass transport at elevated temperature. It is discussed that the cross-solid interaction between particles of various chemical composition, triggered by many different factors during mechanochemical processing, including a short-range diffusion in silicon nitride particles after collisions with other types of particles plays more important role in enhanced reactivity of tested compositions than amorphization of the crystal lattice itself. Controlled deagglomeration of $Si_3N_4$ particles during the course of high-energy milling was also considered.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.264-268
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• 2005

A 2.2-inch QCIF+(176${\times}$RGB${\times}$220) TFT-LCD with integrated row driver was developed using a standard amorphous silicon TFT technology. At low temperature, the integrated row driver operation is dramatically effected by the electron drift mobility reduction(■50 %) and the threshold voltage shift (■1V) of the a-Si TFT. We studied the dependency of circuit design and found that higher on-current circuit is important to guarantee good operation in wide temperature range.

• 전자공학회논문지A
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• 제31A권9호
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• pp.89-95
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• 1994

BaTiO$_{x}$ thin film as insulator and ZnS:Mn film as phosphour layer for thin film electrouminescent device have been deposited by thermal evalporation and dependence of electrical and opeical characeristics have been studied. The optimum deposition conditions for the BaTiO$_{x}$ thin film are such that BaTiO$_{3}$/TiO$_{2}$ mixing ratio was 0.7, sub strate temperature was 100 $^{\circ}C$ and annealing time was 1 hour at 300 $^{\circ}C$. In this case, the dielectric constant of BaTiO$_{x}$ thin film fabricated under those optimum conditions was 26, and for AnS:Mn thin films, the crystallization was done well and the deposition rate was 1300 $\AA$/min when substrate temperature was 200$^{\circ}C$. Thin film Electroluminescent devices were fabricated using BaTiO$_{x}$ and AnS:Mn thin films. The luminescence threshold voltage of device was 41.5 V and brightness was 1.2${\mu}W/cm^{2}$ at appied voltage of 50 V.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.657-658
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• 2006

Although there are many numerical models to simulate fs laser ablation of metals, no model can analyze the ablation phenomena over a wide range of fluence. In this work, a numerical code for simulating the fs laser ablation phenomena of metals has been developed. The two temperature model is employed to predict the ablation rate and the crater shape of metals using phase explosion mechanism in the relatively high fluence regime. Also, the ultrashort thermoelastic model is used for the low fluence regime to account for spallation of the sample by high strain rate. It has been demonstrated that the thermoelastic stress generated within the sample can exceed the yield stress of the material even near the threshold fluence. Numerical computation results are compared with the experiment for Cu and Ni and show good agreement. Discussions are made on the hydrodynamic model considering phase change and hydrodynamic flow.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.187-190
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• 1997

The aluminum-magnesium (Al-Mg) aklloys have been proved to be an effective solvent for synthesis of cubic-phase boron nitride (cBN) from hexagonal-phase boron nitride (hBN) at the conditions of high pressures and high temperatures (HP/HT). Various kinds of hBN powders having different crystallinity have been tested for cBN synthesis with Al-Mg solvents. The conversion ratio from hBN to cBN and the shape of synthesized cBN crystals appeared to be affected strongly by chemical composition and added amount of Al-Mg solvents as well as crystallinity of BN powders. As the magnesium content increased in the Al-Mg solvents, the conversion ratio increased and the size of cBN crystals became larger. The crystal facets developed well in the specimens with solvents having high Mg content. It was observed that a hBNlongrightarrowcBN transformation occurred more easily in the specimens having well crystallized hBN powders. Amorphous BN having much $B_2O_3$ impurity exhibited a low threshold temperature for transformation to cBN, which was attributed to crystallization of amorphous BN to well crystallized hBN prior to transformation into cBN with help of $B_2O_3$.

• 한국세라믹학회지
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• 제43권11호
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• pp.734-737
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• 2006

A series of manganite-based superlattices composed of half-metallic $La_{2/3}Sr_{1/3}MnO_3/LaMnO_3$ and insulating LaMnO$_3$ stacking layers were fabricated by employing pulsed laser deposition method. The dc resistivity increased drastically by simply reducing the stacking periodicity. The resistivity enhancement was accompanied by a gradual decrease in the temperature (T$_c$) of the Metal-to-Insulator Transition (MIT). This observation was interpreted as a small decrease in the effective metallic fraction near the percolation threshold. For the stacking periodicity less than a certain critical value, there appeared another transition to an insulating state at temperatures far below T$_c$. This low-temperature transition seems to be closely related to the AF-type (C-type) orbital ordering in newly formed insulating domains.