• Fire Science and Engineering
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• v.18 no.4
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• pp.57-63
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• 2004

We investigated heat properties of connection terminal in residual current protective devices(RCD) according to contact pressure for low voltage appliance. And we analyzed voltage and current waveform and oxide propagation when the poor-contact happened between terminal and wire. When contact pressure between terminal and connection wire was not applied, the heat was generated and an oxide was formed on the surface of the wire. The temperature of the insulation surrounding terminal was ascended sharply by poor-contact, micro-sparks and continuous arc sound happened in interior terminal. When the poor-contact by vibration occurred inner conductor of terminal and wire, an oxide was propagated on contact surface and the temperature was increased at 869℃. Thus, we found that the risk of electrical disaster is high in terminal and connection wire parts.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.572-582
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• 1996

The porous silicon was prepared in the condition of 70mA/cm2 and 5.10 sec and then oxidized at 800~110$0^{\circ}C$ MOS(Metal Oxide Semiconductor) structure was prepared by Al electrode deposition and analyzed by C-V (Capacitance-Voltage) characteristics. Dielectric constant of oxidized porous silicon was large in the case of low temperature (800, 90$0^{\circ}C$) and short time(20-30min) oxidation and was nearly the same as thermal SiO2 3.9 in the case of high temperature (110$0^{\circ}C$) and long time (above 60 min) It is though to be caused byunoxidized silicon in oxidized porous silicon film and capacitance increase due to surface area increment effect.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.854-857
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• 1999

The properties of Fe-Se-Te system(FeSe(sub)1-xTe(sub)x, x=0.2, 0.5, 0.8) have been studied by means of the X-ray diffraction method and Mossbauer spectroscopy. The results of X-ray diffraction patterns show that three samples have the ixed structure of tetragonal PbO and a small amount of hexagonal NiAs structure respectively. For x=0.5 the lattice parameters of tetragonal PbO structure are a=3.795$\AA$, c=5.896$\AA$ and c/a=1.55. The Mossbauer spectra were obtained with the various temperature variation and than they do not exhibit magnetic hyperfine structure but show a strong doublet. The values of observed isomer shift and quadrupole splitting suggest that the irons of all samples exist in the +2 oxidation state with a major covalent contribution. The temperature dependence of isomer shift values for x=0.8 seems to be originated from the second order Doppler effect.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.282-287
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• 1998

Dependence of magnetoresistance on base pressure and deposition rates of each Fe, Co, Cu layers in the $Fe(50{\AA}/[Co(17{\AA})/Cu(24{\AA})]_20$ multilayer thin films, prepared by dc magnetron sputtering on Corning glass, were investigated. AFM analysis, X-ray diffraction analysis, vibrating sample magnetometer analysis, and magnetoresustance measurement (4-probe method) were performed. The multilayer films deposited under low base pressure increases magnetoresistance ratio by preventing oxidation. Annealing for the samples at a moderate temperature allowed larger textured grain with no loss in the periodicity. Magnetoresistance ratio of the annealed multilayers was increased due to the increase antiferromagnetically coupled fraction of the film after annealing. Optimization of deposition rate was greater than 1 $\AA$/s for Fe, and 2.8 $\AA$/s for Cu. Deposition rate of Co showed a tendency of increasing of magnetoresistance ratio due to the formation of flat magnetic layer in case of high deposition rate of Co.

• Journal of Electrochemical Science and Technology
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• v.13 no.3
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• pp.390-397
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• 2022

The use of microwaves as the energy source for synthesis and sintering of ceramics offers substantial advantages compared to conventional gas-fired and electric resistance furnaces. Benefits include much shorter processing times and reaching the sintering temperature more quickly, resulting in superior final product quality. Most oxide ceramics poorly interact with microwave irradiation at low temperatures; thus, a more complex setup including a susceptor is needed, which makes the whole process very complicated. This investigation pursued a new approach, which enabled us to use microwave irradiation directly in poorly coupled oxides. In many solid-state electrochemical devices, the support is either metal or can be reduced to metal. Metal powders in the support can act as an internal susceptor and heat the entire cell. Then sufficient interaction of microwave irradiation and ceramic material can occur as the sample temperature increases. This microwave heating and exothermic reaction of oxidation of the support can sinter the ceramic very efficiently without any external susceptor. In this study, yttria stabilized zirconia (YSZ) and a Ni-YSZ cermet support were used as an example. The cermet was used as the support, and a YSZ electrolyte was coated and sintered directly using microwave irradiation without the use of any susceptor. The results were compared to a similar cell prepared using a conventional electric furnace. The leakage test and full cell power measurement results revealed a fully leak-free electrolyte. Scanning electron microscopy and density measurements show that microwave sintered samples have lower open porosity in the electrode support than conventional heat treatment. This technique offers an efficient way to directly use microwave irradiation to sinter thin film ceramics without a susceptor.

• Applied Chemistry for Engineering
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• v.19 no.2
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• pp.157-160
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• 2008

The generation of high-purity hydrogen from hydrocarbon fuels is essential for efficient operation of fuel cell. In general, most feasible strategies to generate hydrogen from hydrocarbon fuels consist of a reforming step to generate a mixture of $H_2$, CO, $CO_2$ and $H_2O$ (steam) followed by water gas shift (WGS) and CO clean-up steps. The WGS reaction that shifts CO to $CO_2$ and simultaneously produces another mole of $H_2$ was carried out in a two-stage catalytic conversion process involving a high temperature shift (HTS) and a low temperature shift (LTS). In a typical operation, gas emerges from the reformer is taken through a high temperature shift catalyst to reduce the CO concentration to about 3~5%. The HTS reactor was designed and tested in this study to produce hydrogen-rich gas with CO to a range of 2~4%. The iron based catalysts (G-3C) was used for the HTS to convert the most of CO in the effluent from the partial oxidation (POX) to $H_2$ and $CO_2$ at a relatively high rate. Parametric screening studies were carried out for variations of the following variables: reaction temperature, steam flow rate, components ratio ($H_2/CO$), and reforming gas flow rate.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.18 no.5
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• pp.409-416
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• 1985

In previous paper (Lee et al., 1983) processing method of sardine meat "surimi" was described as a part of the wort to develop new types of ready-to-cook food materials with dark fleshed fishes. As the other part of the work, processing of low salt mackerel fillet was investigated, in this paper, in which fresh mackerel was filleted, salted in brine or with dry salt for an adequate time until the expected salt concentration reached, washed, air dried (3 m/sec, 15 to $20^{\circ}C$), and finally packed individually in K-flex film bag by vacuum or $N_2$ gas substitution. Salting time and salt concentration of brine was decided by the salt level penetrated into the fillet. As the final salt level was fixed to 4 to $5\%$, salting for 20 hours with $10\%$ dry salt or in $15\%$ brine at $5^{\circ}C$ was enough to get that level of salt. If the final salt level was set 5 to $6\%$, salting for 20-24 hours with $15\%$ dry salt or in $20\%$ brine was adequate. Salt penetration, however, was not much influenced by salting method and temperature. Changes in VBN and salt soluble protein occurred more rapidly in cases of salting with dry salt at $20^{\circ}C$ than salted in brine at $5^{\circ}C$, although it was not significant in the period of 20 to 24 hours. Oxidation of lipid and histamine formation during salting at $20^{\circ}C$ could not be neglected if it was delayed loger than 25 hours. Insolubilizing the salt soluble proteins during the storage of salted fillet occurred rapidly regardless of storage temperature. Browning and histamine formation, however, was depended on temperature and packing condition. In case of air pack, deterioration by browning and rancid was deeply developed but not the case for the packs by vacuum or $N_2$ gas substitution. The shelf-life of the salted mackerel fillet based on panel scores of brown color and rancidity, appeared 21 days for the air packed, and more than 30 days for vacunm or $N_2$ gas packed fillet at $20^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.23.1-23.1
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• 2009

ZnO is of great interest for various technological applications ranging from optoelectronics to chemical sensors because of its superior emission, electronic, and chemical properties. In addition, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. To date, several approaches have been proposed for the growth of one-dimensional (1D) ZnO nanostructunres. Several groups have been reported the MOCVD growth of ZnO nanorods with no metal catalysts at $400^{\circ}C$, and fabricated a well-aligned ZnO nanorod array on a PLD prepared ZnO film by using a catalyst-free method. It has been suggested that the synthesis of ZnO nanowires using a template-less/surfactant-free aqueous method. However, despite being a well-established and cost-effective method of thin film deposition, the use of magnetrons puttering to grow ZnO nanorods has not been reported yet. Additionally,magnetron sputtering has the dvantage of producing highly oriented ZnO film sat a relatively low process temperature. Currently, more effort has been concentrated on the synthesis of 1D ZnO nanostructures doped with various metal elements (Al, In, Ga, etc.) to obtain nanostructures with high quality,improved emission properties, and high conductance in functional oxide semiconductors. Among these dopants, Ga-doped ZnO has demonstrated substantial advantages over Al-doped ZnO, including greater resistant to oxidation. Since the covalent bond length of Ga-O ($1.92\;{\AA}$) is nearly equal to that of Zn-O ($1.97\;{\AA}$), high electron mobility and low electrical resistivity are also expected in the Ga-doped ZnO. In this article, we report the successful growth of Ga-doped ZnO nanorods on c-Sapphire substrate without metal catalysts by magnetrons puttering and our investigations of their structural, optical, and field emission properties.

• Journal of Powder Materials
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• v.11 no.4
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• pp.308-313
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• 2004

An experimental study on the combustion of superfine aluminum powders (average particle diameter, a$_{s}$: ∼0.1 ${\mu}{\textrm}{m}$) in air is reported. The formation of aluminum nitride during the combustion of aluminum in air and the influence of the combustion scenario on the structures and compositions of the final products are in the focus of this study. The experiments were conducted in an air (pressure: 1 atm). Superfine aluminum powders were produced by the wire electrical explosion method. Such superfine aluminum powder is stable in air but once ignited it can burn in a self-sustaining way due to its low bulk: density (∼0.1 g/㎤) and a low thermal conductivity. During combustion, the temperature and radiation were measured and the actual burning process was recorded by a video camera. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and chemical analysis were performed on the both initial powders and final products. It was found that the powders, ignited by local heating, burned in a two-stage self-propagating regime. The products of the first stage consisted of unreacted aluminum (-70 mass %) and amorphous oxides with traces of AlN. After the second stage the AlN content exceeded 50 mass % and the residual Al content decreased to ∼10 mass %. A qualitative discussion is given on the kinetic limitation for AlN oxidation due to rapid condensation and encapsulation of gaseous AlN.N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current