• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Korean Journal of Organic Agriculture
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• v.25 no.4
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• pp.737-747
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• 2017

This experiment was carried out to determine the optimal concentration of agricultural organic materials using sulfur and oil for the insect pest control in pepper and cherry tomato cultivation. The control value of aphids and Oriental tobacco budworm (OTB) was examined one day after spraying with sulfur preparation (SP) (0.33~0.17%), oil preparations (OP) (2.00~0.33%), SP+OP, OP+ginkgo leaf extracts (GLE), SP+OP+GLE on the "Super Manidaa"pepper. The aphid control in pepper was complete by applications of SP+OP (0.25+1.00%) in the early growth stage and the control value was above 98.1% by the application of OP+GLE (1.00+1.00 %), SP+OP+GLE (0.25+1.0+1%), SP+OP+GLE (0.25+1.0+0.5%) in the middle to late growth stage while showing 0% in the control treatment. The OTB was completely controlled by the 3 times application with the high concentration of SP+OP (0.25+1.00%) in pepper cultivation. This result indicates that the oil and the sulfur preparations should be applied at low concentration before insect pests do not appeared, and then sprayed at the high concentration after they appear at pepper plant. The greenhouse whitefly in 'Minichal' tomatoes was completely controlled by three times application of SP (0.25~0.33), OP (1.0~2.00%). and all the treatment of SP+OP. However, continuous control with intervals of 1~3 days was considered favorable in the tomato plant. By the periodical control with agricultural organic materials using sulfur and oil, the greenhouse whitefly, which is a high-temperature insect pest, several moths of OTB did not occur at all. In conclusion, SP+OP (0.17%+0.33%) treatment was the most economical combination to control the aphid, OTB, and greenhouse whitefly in pepper and tomato cultivation when considering operating cost. In addition, we recommend that SP should not be sprayed on the plant shoots during the day time from July to August because of high temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.588-595
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• 2020

This study examined the catalytic property of Ni-catalyst used in the gas purifying process to manufacture inert gases of N2 and Ar with high-purity over 9N for semiconductor industrial applications. Two types of Ni-catalysts with a cylindrical shape (C1) and churros shape structure (C2) were compared for the assessment. Optical microscopy and FESEM were used to analyze the shape and microstructure of the Ni-catalyst. EDS, XRD, and micro-Raman characterization were performed to examine the composition and properties. BET and Pulse Titration analyses were conducted to check the surface area and catalytic property of the Ni-catalyst. From the composition analysis results, C1 contained a relatively large amount of graphite as an impurity, and C2 contained higher Ni contents than C1. From specific surface area analysis, the specific surface area of C2 was approximately 1.69 times larger than that of C1. From catalytic property analysis, outstanding performance in O₂ and CO impurity removal was observed at room temperature. Therefore, C2, having low-impurity and large specific surface area, is a suitable catalyst for the high-purity inert gas process in the semiconductor industry because of its outstanding performance in O₂ and CO impurity removal at room temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Korean Journal of Food Science and Technology
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• v.46 no.2
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• pp.189-197
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• 2014

Onion juices were prepared by various heat treatments (at $105-120^{\circ}C$ for 4.5-5.5 h), from the onions cultivated with increasing numbers of sulfur applications (once for Sulfur-1, four times for Sulfur-4). As heat treatment intensity increased, the onion juices darkened (p<0.001), which adversely affected the sensory preference. In addition, increasing the heating temperature significantly increased the organic acid content of onion juices (p<0.001), and therefore, decreased pH (p<0.001). Heat intensity did not affect the thiosulfinate content of onion juices, suggesting that the rate of decomposition of thiosulfinate into low-molecular weight sulfur derivatives is similar over the temperature range of $105-120^{\circ}C$. Total flavonoids were higher in onion juices derived from Sulfur-4 than in Sulfur-1 onions, and increased with heat treatment intensity (p<0.001). These results indicated that heat-facilitated conversion of bound forms of flavonoids to their free forms increases the extractability of flavonoids from onions.

• Horticultural Science & Technology
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• v.28 no.5
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• pp.902-911
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• 2010

Oriental melon ($Cucumis$ $melo$ var. $makuwa$) is a popular and high-value market fruit cultivated in Korea. Consumers are becoming increasingly interested in oriental melon as a healthy diet over the past few years. However, the melons have relatively high quality loss because the fruit are mainly produced for a limited period of time in the summer season. Lack of the proper postharvest treatments and high temperature exposure at harvest or during distribution are the most critical environmental factors limiting postharvest life of fruit. This review focuses on the overview of current research studies for postharvest treatment and functional packaging technology of oriental melon in Korea. Major physiological problems of the harvest fruit include the ripening process in quality changes of the produce such as loss of weight, firmness, flavor, and decay during the storage periods. Low temperature at 7 to $10^{\circ}C$ with high relative humidity of 90 to 95% is the suitable environmental condition used to maintain the quality of fresh oriental melon. Controlled atmosphere (CA) storage or modified atmosphere (MA) packaging can be used as supplemental treatments to extend postharvest-life. For oriental melon, an optimum CA is currently recommended to be 2-3% oxygen and 5-10% carbon dioxide atmosphere. Precooling, pretreatments of ethylene action and functional packaging system can be applied to oriental melon after harvest in order to extend storage life. Major active packaging technologies are concerned with a selectively gas permeable film related to respiration of produce and the packaging applications of ethylene removal, antimicrobial, and antifogging substances to keep the effective freshness of fruit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.301-307
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• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.1
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• pp.21-27
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• 2016

Global warming due to greenhouse gas emissions is considered as a major problem worldwide, and many countries are making great efforts to reduce carbon dioxide emissions. Many technologies in post-combustion, pre-combustion and oxy-fuel combustion $CO_2$ capture have been developed. Among them, a hybrid pre-combustion $CO_2$ capture system of a water gas shift (WGS) reactor and a membrane gas separation unit was investigated. The 2 stage WGS reactor integrated high temperature shift (HTS) with a low temperature shift (LTS) was used to obtain a higher CO conversion rate. A Pd/Cu dense metal membrane was used to separate $H_2$ from $CO_2$ selectively. The performance of the hybrid system in terms of CO conversion and $H_2$ separation was evaluated using a 65% CO, 30 % $H_2$ and 5% $CO_2$ gas mixture for applications to pre-combustion $CO_2$ capture. The experiments were carried out over the range of WGS temperatures ($200-400^{\circ}C$), WGS pressures (0-20bar), Steam/Carbon (S/C) ratios (2.5-5) in a feed gas flow rate of 1 L/min. A very high CO conversion rate of 99.5% was achieved with the HTS-LTS 2 stage water gas shift reactor, and 83% $CO_2$ was concentrated in the retentate using the Pd/Cu membrane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.43 no.5
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• pp.555-566
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• 2023

In this study, a composite phase change material (CPCM) produced using the SOL-GEL technique was developed as a thermal energy storage medium for low-temperature applications. Tetradecane and activated carbon (AC) were used as the core and supporting materials, respectively. The tetradecane phase change material (PCM) was impregnated into the porous structure of AC using the vacuum impregnation method, and a thin layer of silica gel was coated on the prepared composite using the SOL-GEL process, where tetraethyl orthosilicate (TEOS) was used as the silica source. The thermal performance of the CPCM was analysed using differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). DSC results showed that the pure tetradecane PCM had melting and freezing temperatures of 6.4℃ and 1.3℃ and corresponding enthalpies 226 J/g and 223.8 J/g, respectively. The CPCM exhibited enthalpy of 32.98 J/g and 27.7 J/g during the melting and freezing processes at 7.1℃ and 2.4℃, respectively. TGA test results revealed that the AC is thermally stable up to 500℃, which is much higher than the decomposition temperature of the pure tetradecane, which is around 120℃. Moreover, in the case of AC-PCM and CPCM thermal degradation started at 80℃ and 100℃, respectively. The chemical stability of the CPCM was studied using Fourier-transform infrared (FT-IR) spectroscopy, and the results confirmed that the developed composite is chemically stable. Finally, the surface morphology of the AC and CPCM was analysed using scanning electron microscopy (SEM), which confirmed the presence of a thin layer of silica gel on the AC surface after the SOL-GEL process.