• 열처리공학회지
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• 제13권5호
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• pp.303-308
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• 2000

The ring gears of automobile parts are manufactured generally process chart of which is as follows : forging ${\rightarrow}$ annealing or normalizing ${\rightarrow}$ rough machining ${\rightarrow}$ hardening(Quenching-Tempering or carburizing process) ${\rightarrow}$ finish machining. Isothermal annealing process after forging is most effective in the side of improvment of machinability. On this study we selected two kinds of steel;SCM415, SCM435 of most universal and investigated microstructures to find out most suitable condition of heat treatment in proportion continuous cooling and isothermal annealing. As the cooling rate is $5^{\circ}C$ per minute in continuous cooling process, martensite and bainite are coexisted with ferrite and pearlite in SCM435 steel. If the cooling rate is slower than $5^{\circ}C$ per minute, microstructure were only ferrite and pearlite but formation of band structure can't be avoid. On the other hand, microstructure is only ferrite and pearlite regardless of cooling rate because carbon content of SCM415 steel is low. Moreover formation of band structure isn't exposed by faster cooling rate. Most optimal temperature of the isothermal annealing is from $650^{\circ}C$ to $680^{\circ}C$ in SCM435 steel. When holding time is 60 minute with $650^{\circ}C$, the identical ferrite and pearlite microstructures can be obtained.

• 대한전자공학회논문지SD
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• 제48권8호
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• pp.1-4
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• 2011

SiOC 박막과 같은 유무기 하이브리드 저유전 물질에서의 열처리효과에 의한 전기적인 특성의 변화와 유전상수에 관하여 연구하였다. SiOC 박막은 분극에 따른 특성을 분석하기 위해서 TMS과 산소의 혼합가스를 이용한 CVD방법에 의하여 증착되었으며, 300~500도까지 변화하면서 열처리를 하였다. SiOC 박막은 열처리에 의하여 유전상수는 더욱 낮아지며, 400도에서 열처리 한 경우 전기적인 특성이 우수한 것을 확인하였다. XRD 패턴에 의하면 300도이하에서 열처리한 박막과 400도 이상에서 열처리 한 경우 결합구조가 달라지는 것을 알 수 있고 400도 근처에서 급격한 변화가 일어나고 있는 것을 확인하였다.

• Journal of Magnetics
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• 제7권3호
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• Journal of Welding and Joining
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• 제23권6호
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• pp.77-86
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• 2005

Low temperature bonding of the silicon and glass using the Spin-on Glass (SOG) has been conducted experimentally to figure out the effects of the SOG solution composition and process variables on bond strength using the Design of Experiment method. In order to achieve the high quality bond interface without rack, sufficient reaction time of the optimal SOG solution composition is needed along with proper pressure and annealing temperature. The shear strength under the optimal SOG solution composition and process condition was higher than that of conventional anodic bonding and similar to that of wafer direct bonding.

• 한국정보통신학회논문지
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• 제18권3호
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• pp.638-642
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• 2014

본 연구에서는 비스무스(Bi) 박막의 스핀전자소자로의 응용가능성을 확인하기 위해서 열처리 공정에 의한 비스무스 박막의 결정 구조 및 자기저항변화를 조사하였다. 비스무스 박막은 초기에 결정성이 없이 약 100 nm의 결정립과 낮은 자기저항 비(MR)가 상온에서 4.7 % 로 보였으나, 열처리 공정 후 결정립이 확장되고 방위의 재배열이 일어나며 결정립이 형성 되었고, 이로 인해서 자기저항 비가 상온에서 404 %로 크게 향상 되었다. 이러한 자기저항 비의 큰 향상은 크게 확장된 결정립으로 인해서 스핀의 평균산란시간이 크게 증가했기 때문이다. 본 연구를 통해서 열처리 공정이 비스무스 박막의 결정립 형성 및 자기저항 비의 향상에 큰 영향을 보임을 확인하였고, 비스무스 박막의 스핀전자소자로서의 응용 가능성을 증명하였다.

• 한국해양공학회지
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• 제28권4호
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• pp.306-313
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• 2014

Super duplex stainless steels (sDSS) are excellent for use under severely corrosive conditions such as offshore and marine applications like pipelines and flanges. sDSS has better mechanical properties and corrosion resistance than the standard duplex stainless steel (DSS) but it is easier for a sigma phase to appear, which depresses the mechanical property and corrosion resistance, compared to DSS, because sDSS has a higher alloy element than DSS. In addition, sDSS has a feeble ductile-brittle transition temperature (DBTT) because it has a 50% ferrite microstructure. In the actual operating environment, sDSS would be thermally affected by welding and a sub-zero temperature environment. This study analyzed how precipitated sDSS behaves at a sub-zero temperature through annealing heat treatment and a sub-zero tensile test. Six types of specimens with annealing times of up to 60 min were tested in a sub-zero chamber. According to the experimental results, an increase in the annealing time reduced the elongation of sDSS, and a decrease in the tensile test temperature raises the flow stress and tensile stress. In particular, the elongation of specimens annealed for 15 min and 30 min was clearly lowered with a decrease in the tensile test temperature because of the increasing sigma phase fraction ratio.

• Current Photovoltaic Research
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• 제3권1호
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• pp.27-31
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• 2015

It is known that sulfide at the $Cu(In,Ga)Se_2$ ($CIGSe_2$) surface plays a positive role in $CIGSe_2$ solar cells. We investigated the substitution of S with Se on the $CIGSe_2$ surface in S atmosphere. We observed that the sulfur content in the $CIGSe_2$ films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the $CIGSe_2$ films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the $CIGSe_2$ surface is detrimental role, it is necessary to reduce the S annealing temperature as low as $200^{\circ}C$. The cell performance was improved at $200^{\circ}C$ sulfurization.