1 |
H. T. He, H. C. Liu, B. K. Li, X. Guo, Z. J. Xu, M. H. Xie, and J. N. Wang, "Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films," Applied Physics Letters, vol. 103, p. 031606, 2013.
DOI
ScienceOn
|
2 |
S. X. Zhang, R. D. McDonald, A. Shekhter, Z. X. Bi, Y. Li, Q. X. Jia, and S. T. Picraux, "Magneto-resistance up to 60 Tesla in topological insulator Bi2Te3 thin films," Applied Physics Letters, vol. 101, p. 202403, 2012.
DOI
ScienceOn
|
3 |
F. Y. Yang, K. Liu, K. Hong, D. H. Reich, P. C. Searson, and C. L. Chien, "Large Magnetoresistance of Electrodeposited Single-Crystal Bismuth Thin Films," Science, vol. 284, no. 5418, pp. 1335-1337, 1999.
DOI
ScienceOn
|
4 |
G. Schmidt, D. Ferrand, L. W. Molenkamp, A. T. Filip and B. J. van Wees, "Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor," Phys. Rev. B, vol. 62, p. R4790, 2000.
DOI
ScienceOn
|
5 |
D. L. Partin, J. Hermans, D. T. Morelli, C. M. Thrush, C. H. Olk, and T. A. Perry, "Growth and characterization of epitaxial bismuth films," Phys. Rev. B, vol. 38, p. 3818, 1988.
DOI
ScienceOn
|
6 |
D. E. Beutler and N. Giordano, "Localization and electronelectron interaction effects in thin Bi wires and film," Phys. Rev. B, vol. 38, p. 8, 1988.
DOI
ScienceOn
|