• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1254_1255
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• 2009

The composites were fabricated by adding 30, 35, 40, 45[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by Spark Plasma Sintering(hereafter, SPS) were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed in the XRD analysis. The relative density of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites are 88.64[%], 76.80[%], 79.09[%] and 88.12[%], respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of $ZrO_2$ phase. The electrical resistivity of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites are $6.74{\times}10^{-4}$, $4.56{\times}10^{-3}$, $1.92{\times}10^{-3}$ and $4.95{\times}10^{-3}[{\Omega}{\cdot}cm]$ at room temperature, respectively. The electrical resistivity of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ are Positive Temperature Coefficient Resistance(hereafter, PTCR) in temperature ranges from 25[$^{\circ}C$] to 500[$^{\circ}C$]. It is convinced that SiC+40[vol.%]$ZrB_2$ composite by SPS can be applied for heater or electrode.

• Journal of the Korean Electrochemical Society
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• v.10 no.3
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• pp.207-212
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• 2007

[ $PSCF3737(Pr_{0.3}Sr_{0.7}Co_{0.3}Fe_{0.7}O_3)$ ] is a good candidate cathode material for IT-SOFC(intermediate temperature solid oxide fuel cell) because of high MIEC(mixed ionic electronic conductor) conductivity. In this study, the characteristics of PSCF3737 was investigated and optimizations of sintering temperature and thickness for $PSCF3737(Pr_{0.3}Sr_{0.7}Co_{0.3}Fe_{0.7}O_3)$ was carried out. Impedance responses were divided into two parts by frequency region. Middle frequency part (${\sim}10^2\;Hz$) was concerned with oxygen reduction reaction on surface and low frequency part (${\sim}10^{-1}\;Hz$) was related with oxygen diffusion. The reasonable sintering temperature and thickness of cathode were $1200^{\circ}C$ and about $27\;{\mu}m$ with regard to EIS(electrochemical impedance spectroscopy). ASR(areas specific resistance) of optimized cathode is $0.115\;{\Omega}\;cm^2$ at $700^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.38-42
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• 2005

B$_2$O$_3$ added Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ (BBMN) ceramics were not sintered below 900 $^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at 850 $^{\circ}C$. The amount of the $Ba_2$B$_2$O$_{5}$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B$_2$O$_3$ inhibiting the reaction between B$_2$O$_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and B$_2$O$_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density, the dielectric constant ($\varepsilon$$_{r}$) and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf = 21500 GHz, $\varepsilon$$_{r}$ = 31 and temperature coefficient of resonance frequency($\tau$$_{f}$) = 21.3 ppm/$^{\circ}C$ were obtained for the Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$+2.0 mol%B$_2$O$_3$+10.0 mol%CuO ceramic sintered at 875 $^{\circ}C$ for 2 h.h.2 h.h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.838-841
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• 2004

[ $B_2O_3$ ] added $Ba(Mg_{1/3}Nb_{2/3})O_3$ (BBMN) ceramics were not sintered below $900^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at $850^{\circ}C$. The amount of the $Ba_2B_2O_5$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the $B_2O_3$ inhibiting the reaction between $B_2O_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and $B_2O_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density the dielectric constant $({\varepsilon}_r)$ and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf=21500 GHz, ${\varepsilon}_r=31$ and temperature coefficient of resonance frequency$({\tau}_f)=21.3\;ppm/^{\circ}C$ were obtained for the $Ba(Mg_{1/3}Nb_{2/3})O_3+2.0\;mol%B_2O_3+10.0$ mol%CuO ceramic sintered at $875^{\circ}C$ for 2h.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.795-797
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• 1998

A $BaTiO_3$, ferroelectric material, was mixed $SrTiO_3$, $(x)BaTiO_3-(1-x)SrTiO_3$($0.7{\leq}x{\leq}1$) ceramic capacitor with stable electrical properties in high voltage was fabricated. And microstructure, electrical property were investigated with $SrTiO_3$ mol ratio. The shrinkage, open porosity, sintering density were predominated at $9BaTiO_3-0.1SrTiO_3$. Increasing $SrTiO_3$ mol ratio, curie temperature was shifted at low temperature and maximum permittivity was increased. Also, $0.9BaTiO_3-0.1SrTiO_3$ was showed stable dielectric properties at $25{\sim}80[^{\circ}C]$. V-I properties of specimen were observed in the temperature range of $21{\sim}143[^{\circ}C]$, were divided into three regions. The region I below 10[kV/cm] was shown Ohmic conduction, the region II from 10 to 30[kV/cm] was explained by the Poole-Frenkel emission theory and the region III above 30[kV/cm] was analysed by the tunneling effect.

• Journal of the Korean Ceramic Society
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• v.28 no.9
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• pp.667-674
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• 1991

In this study, Kaolin was carbonized at 1300~175$0^{\circ}C$ and its constituent mineral change was investigated. Carbonized kaolin at 1$650^{\circ}C$ was mixed with metallic silicon, formed and nitrified at 135$0^{\circ}C$ in N2-NH3 atmosphere. Properties of this product such as porosity, bulk density, MOR, nitrization rate and oxidation resistence were measured, and its mineralogical changes were investigated by XRD. The results were as follows; 1) $\beta$-SiC was initially synthesized at 150$0^{\circ}C$, and its amount was continuously increased with reaction temperature to 1$700^{\circ}C$. 2) At 1$600^{\circ}C$, mullite was rapidly decomposed and the amounts of $\beta$-SiC and $\alpha$-Al2O3 were increased simultaneously. 3) By adding alkali to kaolin, the decomposition temperature of mullite was dropped approximately 10$0^{\circ}C$, but the amount of $\alpha$-SiC was increased. 4) The highest values of their nitrization rate and MOR were obtained at the specimen of 35 wt% metallic silicon in nitrization reaction. 5) It seems that increment of $\alpha$-Si3N4 and $\alpha$-Al2O3 phase during nitrization was due to the decomposition of Al4SiC4 existed in carbonized kaolin. 6) Si3N4 bonded SiC-Al2O3 composite were fabricated from kaolin at relatively low temperature (135$0^{\circ}C$).

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.462-466
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• 2015

This paper reports the microstructure of hot-pressed $ZrB_2$-SiC ceramics with added $B_4C$ as characterized by transmission electron microscopy. $ZrB_2$ has a melting point of $3245^{\circ}C$, a relatively low density of $6.1g/cm^3$, and specific mechanical properties at an elevated temperature, making it a candidate for application to environments with ultra-high temperatures which exceed $2000^{\circ}C$. Due to the non-sinterability of $ZrB_2$-based ceramics, research on sintering aids such as $B_4C$ or $MoSi_2$ has become prominent recently. From TEM investigations, an amorphous layer with contaminant oxide is observed in the vicinity of $B_4C$ grains remaining in hot-pressed $ZrB_2$-SiC ceramics with $B_4C$ as an additive. The effect of a $B_4C$ addition on the microstructure of this system is also discussed.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.63-68
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• 2017

A black nickel oxide powder, one of the commercial nickel oxide ores, was reduced by hydrogen gas in a batch-type fluidized-bed reactor in a temperature range of 350 to $500^{\circ}C$ and in a residence time range of 5 to 120 min. The hydrogen reduction behavior of the black nickel oxide was found to be somewhat different from that of green nickel oxide ore. For the black nickel oxide, the maximum temperature (below which nickel oxide particles can be reduced without any agglomeration) was significantly lower than that observed for the green nickel oxide. In addition, the best curve fittings of the Avrami model were obtained at higher values of the overall rate constant "k" and at lower values of the exponent "m", compared to those values for the green nickel oxide. It may be inferred from these results that the hydrogen reduction rate of the black nickel oxide is faster than that of the green nickel oxide in the early stages, but the situation reverses in the later stages. For the black nickel oxide ore, in spite of the low temperature sintering, it was possible to achieve a high degree fluidized-bed reduction at lower temperatures and at lower gas consumption rates than was possible for the green nickel oxide. In this regard, the use of black nickel oxide is expected to yield a benefit if its ore price is sufficiently lower than that of the green nickel oxide.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.291-295
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• 2000

The pyroelectric property of $Pb_{0.9}La$_{0.1}TiO_3$ceramics in a range of 1.3-4.1$\mu\textrm{m}$, fabricated by conventional solid sintering, was investigated as a function of poling field. The pyroelectric of the 4.1$\mu\textrm{m}$ of $Pb_{0.9}La$_{0.1}TiO_3$ceramics is higher than that of the 1.3$\mu\textrm{m}$ and 1.7$\mu\textrm{m}$ of $Pb_{0.9}La$_{0.1}TiO_3$ceramics at a low poling field and the pyroelectric coefficient is 25nC/$\textrm{cm}^2$K at a 4kV/mm poling field in every grain size. In order to explain this phenomenon, the intrinsic and extrinsic effects in view of the definition of the pyroelectric coefficient are introduced. The intrinsic and extrinsic effects on the pyroelectric property were investigated by measuring the tetragonal ratio and the $I_{002}$ with temperature with high temperature X-ray diffractometer. The change of spontaneous polarization and the $90^{\circ}$domain wall motion with temperature in the 1.3$\mu\textrm{m}$ and 4.2$\mu\textrm{m}$ of $Pb_{0.9}La$_{0.1}TiO_3$ceramics have no effects on the pyroelectric coefficient. In our study, it can be seen that the pyroelectric coefficient is related to the quantity of $180^{\circ}$domain switching after poling treatment.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.9-12
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• 2004

The effect of x wt% CuO-y wt% $V_2O_5$ content on the microwave properties of $(Pb_{0.45}Ca_{0.55})[(Fe_{0.5}Nb_{0.5})_{0.9}Sn_{0.1}]O_3$ (PCFNS) ceramics was investigated. In order to decrease the sintering temperature and use as a Low Temperature co-firing Ceramics (LTCC), CuO-$V_2O_5$ are added in the PCFNS. The bulk density, dielectric constant (${\varepsilon}_r$) and quality factor(Q${\cdot}f_0$) increased with increase in CuO content within a limited value. The microwave properties were degraded with increases in $V_2O_5$ content. The temperature coefficient of the resonant frequency (${\tau}_f$) of PCFNS was shifted to positive value abruptly with increasing the $V_2O_5$ content, while the ${\tau}_f$ was slightly shifted to positive value with increasing the CuO content. The optimized microwave properties, ${\varepsilon}_r$ = 88, Q${\cdot}f_0$ = 6100 (GHz), and ${\tau}_f$ = 18 ppm/$^{\circ}C$, were obtained in $(Pb_{0.45}Ca_{0.55})[(Fe_{0.5}Nb_{0.5})_{0.9}Sn_{0.1}]O_3$ with 0.2wt% CuO 0.05 wt% $V_2O_5$ and sintered at $1000^{\circ}C$ for 3 h. The relationship between the microstructure and microwave dielectric properties of ceramics was studied by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM)