• Title/Summary/Keyword: Low resistance measurement

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A Study on the Distribution of Friction Heat generated by CMP Process (CMP 공정에서 발생하는 연마온도 분포에 관한 연구)

  • 김형재;권대희;정해도;이용숙;신영재
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.3
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    • pp.42-49
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    • 2003
  • In this paper, we provide the results of polishing temperature distribution by way of infrared ray measurement system as well as polishing resistance, which can be interpreted as tribological aspects of CMP, using force measurement system. The results include the trend of polishing temperature, its distribution profile and temperature change during polishing. The results indicate that temperature affects greatly to the removal rate. Polishing temperature increases gradually and reaches steady state temperature and the period of temperature change occurs first tens of seconds. Furthermore, the friction force also varies as the same pattern with polishing temperature from high friction to low. These results suggest that the first period of the whole polishing time greatly affects the nonuniformity of removal rate.

Creep Damage Evaluation of High-Temperature Pipeline Material for Fossil Power Plant by Ultrasonic Frequency Analysis Spectrum Method (초음파 주파수분석법에 의한 발전소 고온배관재료의 크리프손상 평가)

  • Chung, Min-Hwa;Lee, Sang-Guk
    • Journal of Ocean Engineering and Technology
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    • v.13 no.2 s.32
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    • pp.90-98
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    • 1999
  • Boiler high-temperature pipelines such as main steam pipe, header and steam drum in fossil power plants are degraded by creep damage due to severe operationg conditions like high temperature and high pressure for an extended period time. Such material degradation lead to various component faliures causing serious accidents at the plant. Conventional measurement techniques such as replica method, electric resistance method, and hardness test method have such disadvantages as complex preparation and measurement procedures, too many control parameters, and therefore, low practicality and they were applied only to component surfaces with good accessibility. In this study, both artificial creep degradation test using life prediction formula and frequency analysis by ultrasonic tests for their preparing creep degraded specimens have been carried out for the purpose of nondestructive evaluation for creep damage which can occur in high-temperature pipelline of fossil power plant. As a result of ultrasonic tests for crept specimens, we confirmed that the high frequency side spectra decrease and central frequency components shift to low frequency bans, and bandwiths decrease as increasing creep damage in backwall echoes.

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Interfacial Properties and Sensing of Carbon Nanofiber/Tube and Electrospun Nanofiber/Epoxy Composites Using Electrical Resistance Measurement and Micromechanical Technique (전기저항측정 및 미세역학시험법을 이용한 탄소나노섬유/튜브 및 전기방사된 나노섬유/에폭시 복합재료의 계면특성 및 감지능 연구)

  • Jung Jin-Gyu;Kim Sung-Ju;Park Joung-Man
    • Composites Research
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    • v.18 no.4
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    • pp.21-26
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    • 2005
  • Nondestructive damage sensing and load transfer mechanisms of carbon nanotube (CNT) and nanofiber (CNF)/epoxy composites have been investigated by using electro-micromechanical technique. The electrospun PVDF nanofibers were also prepared as a piezoelectric sensor. The electro-micromechanical techniques were applied to evaluate sensing response of carbon nanocomposites by measuring electrical resistance under an uniform cyclic loading. Composites with higher volume content of CNT showed significantly higher tensile properties than neat and low volume$\%$ CNT composites. CNT composites showed humidity sensing within limited temperature range. CNT composites with smaller aspect ratio showed higher apparent modulus due to high volume content in case of shorter aspect ratio. Thermal treated electrospun PVDF nanofiber showed higher mechanical properties than the untreated case due to crystallinity increase, whereas load sensing decreased in heat treated case. Electrospun PVDF nanofiber web also showed sensing effect on humidity and temperature as well as stress transferring. Nanocomposites and electrospun PVDF nanofiber web can be applicable for sensing application.

A Study on Malfunction Mode of CMOS IC Under Narrow-Band High-Power Electromagnetic Wave (협대역 고출력 전자기파로 인한 CMOS IC에서의 오동작 특성 연구)

  • Park, Jin-Wook;Huh, Chang-Su;Seo, Chang-Su;Lee, Sung-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.9
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    • pp.559-564
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    • 2016
  • This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

Sn58Bi Solder Interconnection for Low-Temperature Flex-on-Flex Bonding

  • Lee, Haksun;Choi, Kwang-Seong;Eom, Yong-Sung;Bae, Hyun-Cheol;Lee, Jin Ho
    • ETRI Journal
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    • v.38 no.6
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    • pp.1163-1171
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    • 2016
  • Integration technologies involving flexible substrates are receiving significant attention owing the appearance of new products regarding wearable and Internet of Things technologies. There has been a continuous demand from the industry for a reliable bonding method applicable to a low-temperature process and flexible substrates. Up to now, however, an anisotropic conductive film (ACF) has been predominantly used in applications involving flexible substrates; we therefore suggest low-temperature lead-free soldering and bonding processes as a possible alternative for flex-on-flex applications. Test vehicles were designed on polyimide flexible substrates (FPCBs) to measure the contact resistances. Solder bumping was carried out using a solder-on-pad process with Solder Bump Maker based on Sn58Bi for low-temperature applications. In addition, thermocompression bonding of FPCBs was successfully demonstrated within the temperature of $150^{\circ}C$ using a newly developed fluxing underfill material with fluxing and curing capabilities at low temperature. The same FPCBs were bonded using commercially available ACFs in order to compare the joint properties with those of a joint formed using solder and an underfill. Both of the interconnections formed with Sn58Bi and ACF were examined through a contact resistance measurement, an $85^{\circ}C$ and 85% reliability test, and an SEM cross-sectional analysis.

Low Resistivity Ohmic Ni/Si/Ni Contacts to N-Type 4H-SiC (낮은 접촉저항을 갖는 Ni/Si/Ni n형 4H-SiC의 오옴성 접합)

  • Kim C. K.;Yang S. J.;Cho N. I.;Yoo H. J.
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.10
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    • pp.495-499
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    • 2004
  • Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

Electrochemical Properties of Carbon Nano-Tube Electrode (탄소나노튜브 전극의 전기화학적 특성)

  • Lee Dong-Yoon;Koo Bo-Kun;Lee Won-Jae;Song Jae-Sung;Kim Hyun-Ju
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.4
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    • pp.139-143
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    • 2005
  • For application of carbon nano-tube (CNT) as a counter electrode materials of dye-sensitized solar cell (DSSC), the electrochemical behavior of CNT electrode was studied, employing cyclic-voltammetry (C-V) and impedance spectroscopy. Fabrication of CNT-paste and formation of CNT-counter electrode for characteristic measurement have been carried out using ball-milling and doctor blade process, respectively. Unit cell for measurements was assembled using Pt electrode, CNT electrode, and iodine-embedded electrolyte. Field emission-scanning electron microscopy (FE-SEM) was used for structural investigation of CNT powder and electrode. Sheet resistance of electrode was measured with 4-point probe method. Electrochemical properties of electrode, C-V and impedance spectrum, were studied, employing potentiogalvanostat (EG&G 273A) and lock in amplifier (EG&G 5210). As a results, the sheet resistance of CNT electrode is almost similar to that of F-doped SnO2 (FTO) coated glass substrate as approximately 10 ohm/sq. From C-V and impedance spectroscopy measurements, it was found that CNT electrode has high reaction rate and low interface reaction resistance between CNT surface and electrolyte. These results provides that CNT electrode were superior to that of conventional Pt electrode. Particularly, the reaction rate in the CNT electrode is about thrice high than Pt electrode. Therefore. CNT electrode is to be good candidate material for counter electrode in DSSC.

Electrical and Mechanical Properties of Semiconductive Composites for DC Power Cable (직류 전력케이블용 반도전 복합체의 전기적·기계적 특성)

  • Lee, Ki-Joung;Seo, Bum-Sik;Yang, Jong-Seok;Seong, Baeg-Yong;Park, Dae-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.2
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    • pp.119-125
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    • 2013
  • In this paper, semiconducting shield specimens for a DC cable is fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ratio of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

Operating Conditions of Proton Exchange Membrane Fuel Cell Using Grafoil$^{TM}$ as Bipolar Plates (그라포일 분리판을 이용한 고분자 전해질 연료전지의 운전 조건에 관한 연구)

  • Park, Taehyun;Chang, Ikwhang;Lee, Yoon Ho;Lee, Juhyung;Cha, Suk-Won
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.85.1-85.1
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    • 2011
  • In this study, Grafoil$^{TM}$ which has comparable electric resistance and chemical stability but is flexible, fragile, and cheap material was adopted as bipolar plates for proton exchange membrane fuel cell(PEMFC) having only one straight line flow channel. Because of its flexibility, pressurizations of cell with various pressures showed different operating characteristics compared to ordinary graphite-used PEMFC. While performances of both cells decreased as these were pressurized, investigation of ohmic and faradaic resistance by electrochemical impedance measurement indicated different tendency of change. Ohmic resistance of graphite-used cell increased with increasing pressure, which is reversed in Grafoil$^{TM}$-used cell. It is speculated that effective chemical reaction area is decreased with increasing pressure in case of graphite-used one, but because of flexible property of Grafoil$^{TM}$, gas diffusion layer in Grafoil$^{TM}$-used cell was well-activated. Different rate of change of faradaic resistances in both cells support this supposition. However, although optimum point of pressurization is found, it is required to investigate other operating conditions because of low performance compared to graphite-used cell.

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Measurement and Analysis of Gate Finger Number Dependence of Input Resistance for Sub-micron MOSFETs (Sub-micron MOSFET을 위한 입력 저항의 게이트 핑거 수 종속성 측정 및 분석)

  • Ahn, Jahyun;Lee, Seonghearn
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.12
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    • pp.59-65
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    • 2014
  • Two input resistances converted from $S_{11}$-parameter and $Z_{11}$-parameter of MOSFETs with various gate finger numbers Nf were measured in low frequency region. The 1/Nf dependent input resistance from $S_{11}$-parameter exhibits much lower values than that from $Z_{11}$-parameter in the range of $Nf{\leq}64$. This 1/Nf dependence was theoretically verified by using Nf dependent nonlinear equation derived from a MOSFET equivalent circuit.