• Title/Summary/Keyword: Low frequency offset

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MMIC Cascade VCO with Low Phase Noise in InGaP/GaAs HBT Process for Ku-Band Application

  • Shrestha Bhanu;Lee Jae-Young;Lee Jeiyoung;Cheon Sang-Hoon;Kim Nam-Young
    • Journal of electromagnetic engineering and science
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    • v.4 no.4
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    • pp.156-161
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    • 2004
  • The MMIC cascode VCO is designed, fabricated, and measured for Ku-band Low Noise Blcok(LNB) system using InGaP/GaAs HBT technology. The phase noise of -116.4 dBc/Hz at 1 MHz offset with output power of 1.3 dBm is obtained at 11.526 GHz by applying 3 V and 11 mA, which is comparatively better characteristics than compared with the different configuration VCOs fabricated with other technologies. The simulated results of oscillation frequency and second harmonic suppression agree with the measured results. The phase noise is improved due to the use of the smallest value of inductor in frequency determining network and the InGaP ledge function of the technology. The chip size of $830\time781\;{\mu}m^2$ is also achieved.

Optimized Phase Noise of LC VCO Using an Asymmetrical Inductance Tank

  • Yoon Jae-Ho;Shrestha Bhanu;Koh Ah-Rah;Kennedy Gary P.;Kim Nam-Young
    • Journal of electromagnetic engineering and science
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    • v.6 no.1
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    • pp.30-35
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    • 2006
  • This paper describes fully integrated low phase noise MMIC voltage controlled oscillators(VCOs). The Asymmetrical Inductance Tank VCO(AIT-VCO), which optimize the shortcoming of the previous tank's inductance optimization approach, has lower phase noise performance due to achieving higher equivalent parallel resistance and Q value of the tank. This VCO features an output power signal in the range of - 11.53 dBm and a tuning range of 261 MHz or 15.2 % of its operating frequency. This VCO exhibits a phase noise of - 117.3 dBc/Hz at a frequency offset of 100 kHz from carrier. A phase noise reduction of 15 dB was achieved relative to only one spiral inductor. The AIT-VCO achieved low very low figure of merit of -184.6 dBc/Hz. The die area, including buffers and bond pads, is $0.9{\times}0.9mm^2$.

New In-Orbit Pixel Correction Method

  • Kim Youngsun;Kong Jong-Pil;Heo Haeng-Pal;Park Jong-Euk;Chang Young-Jun
    • Proceedings of the KSRS Conference
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    • 2005.10a
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    • pp.604-607
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    • 2005
  • All CCD pixels do not react uniformly even if the light of same radiance enters into the camera. This comes from the different camera optical characteristics, the read-out characteristics, the pixel own characteristics and so on. Usually, the image data of satellite camera can be corrected by the various image-processing methods in the ground. However, sometimes, the in-orbit correction is needed to get the higher quality image. Especially high frequency pixel correction in the middle of in-orbit mission is needed because the in-orbit data compression with the high frequency loss is essential to transmit many data in real time due to the limited RF bandwidth. In this case, this high frequency correction can prevent have to have any unnecessary high frequency loss. This in-orbit correction can be done by the specific correction table, which consists of the gain and the offset correction value for each pixel. So, it is very important to get more accurate correction table for good correction results. This paper shows the new algorithm to get accurate pixel correction table. This algorithm shall be verified theoretically and also verified with the various simulation and the test results.

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Design and Fabrication of CMOS Low-Power Cross-Coupled Voltage Controlled Oscillators for a Short Range Radar (근거리 레이더용 CMOS 저전력 교차 결합 전압 제어 발진기 설계 및 제작)

  • Kim, Rak-Young;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.6
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    • pp.591-600
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    • 2010
  • In this paper, three kinds of 24 GHz low-power CMOS cross-coupled voltage controlled oscillators are designed and fabricated for a short-range radar applications using TSMC 0.13 ${\mu}m$ CMOS process. The basic CMOS crosscoupled voltage controlled oscillator is designed for oscillating around a center frequency of 24.1 GHz and subthreshold oscillators are developed for low power operation from it. A double resonant circuit is newly applied to the subthreshold oscillator to improve the problem that parasitic capacitance of large transistors in a subthreshold oscillator can push the oscillation frequency toward lower frequencies. The fabricated chips show the phase noise of -101~-103.5 dBc/Hz at 1 MHz offset, the output power of -11.85~-15.33 dBm and the frequency tuning range of 475~852 MHz. In terms of power consumption, the basic oscillator consumes 5.6 mW, while the subthreshold oscillator does 3.3 mW. The subthreshold oscillator with the double resonant circuit shows relatively lower power consumption and improved phase noise performance while maintaining a comparable frequency tuning range. The subthreshold oscillator with double resonances has FOM of -185.2 dBc based on 1 mW DC power reference, which is an about 3 dB improved result compared with the basic oscillator.

Implementation of Down Converter for Ku-Band Application (Ku 대역용 주파수변환기의 구현)

  • 정동근;김상태;하천수
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.4 no.3
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    • pp.527-536
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    • 2000
  • This paper discusses the design of self-oscillating mixer type low noise down converter using the microwave field effect transistor. The mixer is consists of local oscillator in which high stability dielectric resonator and band pass filter to get rid of spurious oscillation at intermediate frequency stage. The microstrip antenna was integrated in the same substrate which generate 12.3GHz and low noise amplifier was also added after antenna using 3 stage of high electron mobility transistors. The output frequency from the local oscillator was chosen as 11.3GHz for the Ku-band application. The measured phase noise was -804dBc/Hz at 100kHz offset frequency, and the gain was 7~12dB in frequency range from 12.0GHz to 12.7GHz. The noise figure at intermediate frequency stage was 64H. The designed model shows less conversion loss than previous diode type mixer. The proposed mixer can be used in digital satellite broadcasting and communication system and expected to use in next generation low noise block design.

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CMOS Interface Circuit for MEMS Acceleration Sensor (MEMS 가속도센서를 위한 CMOS 인터페이스 회로)

  • Jeong, Jae-hwan;Kim, Ji-yong;Jang, Jeong-eun;Shin, Hee-chan;Yu, Chong-gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.221-224
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    • 2012
  • This paper presents a CMOS interface circuit for MEMS acceleration sensor. It consists of a capacitance to voltage converter(CVC), a second-order switched-capacitor (SC) integrator and comparator. A bandgap reference(BGR) has been designed to supply a stable bias to the circuit and a ${\Sigma}{\Delta}$ Modulator with chopper - stabilization(CHS) has also been designed for more suppression of the low frequency noise and offset. As a result, the output of this ${\Sigma}{\Delta}$ Modulator increases about 10% duty cycle when the input voltage amplitude increases 100mV and the sensitivity is x, y-axis 0.45v/g, z-axis 0.28V/g. This work is designed and implemented in a 0.35um CMOS technology with a supply voltage of 3.3V and a sampling frequency of 3MHz sampling frequency. The size of the designed chip including PADs is $0.96mm{\times}0.85mm$.

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A Low Phase-Noise Ka-Band Hybrid Frequency Synthesizer for Millimeter Wave Seeker (낮은 위상 잡음을 갖는 Ka 대역 밀리미터파 탐색기용 하이브리드 주파수 합성기)

  • Lim, Ju-Hyun;Han, Hae-Jin
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.11
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    • pp.1117-1124
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    • 2011
  • In this paper, we implemented a Ka-band frequency synthesizer for millimeter wave seeker. We improved frequency synthesizer performance of phase noise, resolution and spurious using the DDS driven hybrid method The proposed frequency synthesizer has the bandwidth of 1 GHz, frequency switching time of below 9 ${\mu}s$, suppressed spurious level of below -68.9 dBc. phase noise of -113.58 dBc/Hz at offset 100 kHz and flatness of ${\pm}$0.7 dB.

A Delta-Sigma Fractional-N Frequency Synthesizer for Quad-Band Multi-Standard Mobile Broadcasting Tuners in 0.18-μm CMOS

  • Shin, Jae-Wook;Kim, Jong-Sik;Kim, Seung-Soo;Shin, Hyun-Chol
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.4
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    • pp.267-273
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    • 2007
  • A fractional-N frequency synthesizer supports quadruple bands and multiple standards for mobile broadcasting systems. A novel linearized coarse tuned VCO adopting a pseudo-exponential capacitor bank structure is proposed to cover the wide bandwidth of 65%. The proposed technique successfully reduces the variations of KVCO and per-code frequency step by 3.2 and 2.7 times, respectively. For the divider and prescaler circuits, TSPC (true single-phase clock) logic is extensively utilized for high speed operation, low power consumption, and small silicon area. Implemented in $0.18-{\mu}m$ CMOS, the PLL covers $154{\sim}303$ MHz (VHF-III), $462{\sim}911$ MHz (UHF), and $1441{\sim}1887$ MHz (L1, L2) with two VCO's while dissipating 23 mA from 1.8 V supply. The integrated phase noise is 0.598 and 0.812 degree for the integer-N and fractional-N modes, respectively, at 750 MHz output frequency. The in-band noise at 10 kHz offset is -96 dBc/Hz for the integer-N mode and degraded only by 3 dB for the fractional-N mode.

Design of A Self-Oscillating Mixer Using A Novel DGS (새로운 DGS구조를 이용한 자기 발진 혼합기 설계)

  • Joung, Myung-Sup;Kim, Jong-Ok;Park, Jun-Seok;Lim, Jae-Bong;Kim, Heong-Seok;Cho, Hong-Goo
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1958-1960
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    • 2003
  • Here we describe a unique self-oscillating mixer (SOM) design using a modified defected ground structure (DGS) for down-converter. Proposed SOM is consisted of self-oscillator, which can produce negative resistance and select resonance frequency, and input/output matching filter. As the advantage of this SOM can be reused by module that mix signals with transistor that is used to oscillator, it is simply and low-costly designed Also, there is easy advantage to be applied in RFIC/ MMIC technology because it offers excellent high Q value in spite of using micro-strip structure. Designed self-oscillating frequency is 1.04GHz and RF frequency established is 0.8GHz. It was achieved 20dB conversion loss and phase noise of -95dBc/Hz at 100KHz offset frequency over intermediate frequency (IF). The equivalent circuit parameters for DGS are extracted by using a three dimensional EM simulator and simple circuit analysis method.

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Distance Sensing of Moving Target with Frequency Control of 2.4 GHz Doppler Radar (2.4 GHz 도플러 레이다의 주파수 조정을 통한 이동체 거리 센싱)

  • Baik, Kyung-Jin;Jang, Byung-Jun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.2
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    • pp.152-159
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    • 2019
  • In general, a Doppler radar can measure only the velocity of a moving target. To measure the distance of a moving target, it is necessary to use a frequency-modulated continuous wave or pulse radar. However, the latter are very complex in terms of both hardware as well as signal processing. Moreover, the requirement of wide bandwidth necessitates the use of millimeter-wave frequency bands of 24 GHz and 77 GHz. Recently, a new kind of Doppler radar using multitone frequency has been studied to sense the distance of moving targets in addition to their speed. In this study, we show that distance sensing of moving targets is possible by adjusting only the frequency of a 2.4 GHz Doppler radar with low cost phase lock loop. In particular, we show that distance can be sensed using only alternating current information without direct current offset information. The proposed technology satisfies the Korean local standard for low power radio equipment for moving target identification in the 2.4 GHz frequency band, and enables multiple long-range sensing and radio-frequency identification applications.