• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.8
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• pp.1-4
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• 2011

This study was the coorrelation between the electrical properties and the dielectric constant of organic inorganic hybrid type low k SiOC film. SiOC film as low-k films was deposited by the chemical vapor deposition and then annealed at 30 $0{\sim}500^{\circ}C$ to find out the properties of the depending on the temperature and polarity. SiOC film decreased the dielectric constant after annealing process, and the electrical properties were improved at the sample annealed at $400^{\circ}C$. From the XRD patterns, there were two kinds of bonding structures in SiOC film. There was the difference in the bonding structure between the samples annealed under $300^{\circ}C$ and the samples annealed over $400^{\circ}C$. The change was confirmed near $400^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.827-835
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• 1992

The effects of CeO2 on the properties of cordierite-based glass-ceramics and its applicability to low firing temperature substrate were examined. Glass-ceramics were prepared by sintering the glass powder compacts at 900~100$0^{\circ}C$ for 3 h. Density, bending strength, dielectric constant and thermal expansion coefficient of the glass-ceramics were measured as functions of CeO2 contents and sintering temperatures. By adding CeO2, dense glass-ceramics were obtained below 100$0^{\circ}C$. dielectric constant and bending strength were more dependent on the porosity of glass-ceramics containing 5 wt% CeO2, sintered at 100$0^{\circ}C$ for 3 h, were as follows; relative density is 95.3%, bending strength is 178$\pm$11 MPa, dielectric constant is 4.98$\pm$0.20 (at 1 MHz) and thermal expansion coefficient is 33.7$\times$10-7/$^{\circ}C$. Therefore, the glass-ceramics containing 5 wt% CeO2 appeared to be suitable for low firing temperature substrate of electronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.41-46
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• 2009

The low dielectric SiOCH films were deposited on p-type Si(100) substrates through the dissociation of BTMSM $(((CH_3)_3Si)_2CH_2)$ precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 to 60 sccm by 2 sccm step into reaction chamber but with the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed large reduction of the maximum capacitance yielding low dielectric constant owing to reductions of surface charge density. After exposure at room temperature and atmospheric pressure, dielectric constant of SiOCH films was totally increased. However, annealed SiOCH thin films were more stable than as-deposited SiOCH thin films for natural oxidation.

• Progress in Superconductivity and Cryogenics
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• v.24 no.1
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• pp.29-33
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• 2022

Recently, development of a cryogenic fluids storage tank for storing or transporting liquid hydrogen is actively in progress. In cryogenic fluids storage tanks, hydrogen evaporates due to the extreme temperature difference inside and outside the tank. As the mass of the cryogenic fluids changes with continuous vaporization, the fluids level also changes. Therefore, there is need for a method of accurately measuring the level change in the storage tank. In the case of general cryogenic fluids, it is difficult to accurately measure the level because the dielectric constant is very low. As a method of measuring cryogenic fluids level with low dielectric constant, it can be used an Millimeter wave (MM wave) FMCW radar sensor. However, the signal sensitivity is very weak and the level accuracy is poor. In this paper, the signal sensitivity is improved by designing the horn lens antenna of the existing 80 GHz FMCW radar sensor. Horn lens antenna is fabricated by FDM/SLA type 3D printer according to horn and lens characteristics. The horn is used to increase the signal gain and the lens improves the signal straightness. This makes it possible to measure the level of cryogenic fluids with a low dielectric constant.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.53-58
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• 1998

Sintering and dielectric characteristics of substrates were estimated by mixing rate of alumina and potashborosilicate glass(PBSG) powders. PBSG powders were used 7761(corning code)and alumina powders were used in extra pure rate(99.9%) and had 0.1 ${\mu}$m mean size. After ball milling with organic additives green sheets which were casted by doctor blade machine were sintered at 800$^{\circ}C$ for 1∼3hrs. Microstructure, linear shrinkage and dielectric constant of substrates were surveyed in order to fabricate low-dielectric and low tem-perature sintering substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.727-729
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• 2007

Inorganic-organic hybrid polymer provides various advantages including low-temperature process, high dielectric constant and direct photo-patterning. The hybrid dielectric was synthesized by the sol-gel process in which an acid-catalyzed solution of Si alkoxide and Zr alkoxide was used as a precursor. The electrical performance of transistors with hybrid dielectric was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.148-148
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• 2008

Low-k dielectric materials are an alternative plan to improve the signal propagation delay, crosstalk, dynamic power consumption due to resistance and parasitic capacitance generated the decrease of device size. Now, various materials is studied for the next generation. Diethoxymethlysiliane (DEMS) precursor using this study has two ethoxy groups along with one methyl group attached to the silicon atoms. SiCOH thin films were deposited on p-type Si(100) substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) using DEMS. In this study, we studied the effect of oxygen($O_2$) flow rate for DEMS to characteristics of thin films. The characteristics of thin films deposited using DEMS and $O_2$ evaluated through refractive index, dielectric constant(k), surface roughness, I-V(MIM:Al / SiCOH / Ag), C-V(MIM), deposition rate.