• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.7
• /
• pp.424-427
• /
• 2015

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{0.86}Ca_{0.14})(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3+xCuO$ (x= 0.006~0.010) ceramics were prepared by the conventional solid-state reaction method. The effects of CuO addition on the microstructure and dielectric properties was investigated. All specimens indicated rhombohedral phase without any secondary phase. As CuO addition increased, the variation width of TCC was increased at more than $40^{\circ}C$. Also, the specimen with x=0.007 sintered at $1,250^{\circ}C$ showed the high dielectric constant of 9,632 in spite of low temperature sintering temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.14-17
• /
• 1995

In this study, fur the use of portable communication multilayer devices. 0.15wt% V$_2$O$\_$5/ added BiNbO$_4$which is low-fire microwave dielectric ceramic as able to co-fire with high conductors was made into specimens with the additions of Cr$_2$O$_3$0.04, 0.2, 0.4, 0.8, 1.2wt%. These specimens were sintered at 930, 960. 990, 1030$^{\circ}C$ respectively to make the microwave dielectric resonators. These resonators were investigated by measuring the structure and dielectric properties. The density of the specimens was increased by the amounts of the Cr$_2$O$_3$and increased by increasing the temperature. 0.8wt% Cr$_2$O$_3$added and sintered at 960$^{\circ}C$ specimen skewed 49 dielectric constant. Q$.$f values were increased by the amounts of Cr$_2$O$_3$. And Q value was deteriorated by the additions of Cr$_2$O$_3$at sufficiently sintered temperatures. Negative resonant temperature coefficients were moved to positive by the amounts of Cr$_2$O$_3$and returned negative again at 1.2wt%. Temperature characteristics were deteriorated at 1030$^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.4
• /
• pp.1-7
• /
• 2018

As the performance and density of IC (integrated circuit) devices increase, power and signal integrities in the global interconnects of advanced packaging technologies are becoming more difficult. Thus, the global interconnect technologies should be designed to accommodate increased input/output (I/O) counts, improved power grid network integrity, reduced RC delay, and improved electrical crosstalk stability. This requirement resulted in the fine-pitch interconnects with a low-k dielectric in 3D packaging or wafer level packaging structure. This paper reviews an organic-inorganic hybrid material as a potential dielectric candidate for the global interconnects. An organic-inorganic hybrid material called polysiloxane can provide spin process without high temperature curing, an excellent dielectric constant, and good mechanical properties.

• Journal of the Korean Ceramic Society
• /
• v.43 no.1 s.284
• /
• pp.55-61
• /
• 2006

The microwave dielectric properties and low temperature sintering of $Ca[Ti_{1-x}(Ni_{1/3}Nb_{2/3})_x]O_3$ system were investigated at the sintering temperature $1,200\~1,350^{\circ}C$. The density and quality factors $(Q{\times}f)$ increased while dielectric constants slightly decreased with the decrease of Ti. The dielectric constant, quality factor, and temperature coefficient of resonance frequency $(\tau_f)$ were 64, 17,000 GHz, and $-9.1\;ppm/^{\circ}C$ respectively, when $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ ceramics were sintered at $1,300^{\circ}C$ for 4 h. $2Li_2O-B_2O_3$ was added to $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ to decrease the sintering temperature for LTCC application. The microwave dielectric properties of the samples sintered at $925^{\circ}C$ for 2 h with the addition of $6\;wt\%\;2Li_2O-B_2O_3$ were $\varepsilon_r=48.7,\;Q{\times}f=8,460\;GHz$, and $\tau_f=+5.6ppm/^{\circ}C$. Compatibility test of the composition with silver electrode shows no reaction with silver electrode, implying the feasibility as a high-K LTCC material.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.4
• /
• pp.79-85
• /
• 2023

A novel low-temperature co-fired ceramic (LTCC) dielectric, composed of (1-4x)Bi_1.5Zn_1.0Nb_1.5O₇-3xBi₂Zn_2/3Nb_4/3O₇-2xLiZnNbO₄ (x=0.03-0.21), was synthesized through reactive liquid phase sintering of Bi_1.5Zn_1.0Nb_1.5O₇-xLi₂CO₃ ceramic at temperatures ranging from 850℃ to 920℃ for 4 hours. During sintering, Li₂CO₃ reacted with Bi_1.5Zn_1.0Nb_1.5O₇, resulting in the formation of Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄. The resulting sintered body exhibited a relative sintering density exceeding 96% of the theoretical density. By altering the initial Li₂CO₃ content (x) and consequently modulating the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇, Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄ in the final sintered body, a sample with high dielectric constant (ε_r), low dielectric loss (tan δ), and the temperature coefficient of dielectric constant (TCε) characterized by NP0 specification (TCε ≤ ±30 ppm/℃) was achieved. As the Li₂CO₃ content increased from x=0.03 mol to x=0.15 mol, the volume fraction of Bi₂Zn_2/3Nb_4/3O₇ and LiZnNbO₄ in the composite increased, while the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇ decreased. Consequently, the dielectric constant (εr) of the composite materials varied from 148.38 to 126.99, the dielectric loss (tan δ) shifted from 5.29×10^-4 to 3.31×10^-4, and the temperature coefficient of dielectric constant (TCε) transitioned from -340.35 ppm/℃ to 299.67 ppm/℃. A dielectric exhibiting NP0 characteristics was achieved at x=0.09 for Li₂CO₃, with a dielectric constant (ε_r) of 143.06, a dielectric loss (tan δ) value of 4.31×10^-4, and a temperature coefficient of dielectric constant (TCε) value of -9.98 ppm/℃. Chemical compatibility experiment with Ag electrode revealed that the developed composite material exhibited no reactivity with the Ag electrode during the co-firing process.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1587-1588
• /
• 2006

Tn this paper, PCB (Printed Circuit Board) embedded $BaTiO_3$ MIM capacitors were designed, fabricated, and characterized for low cost organic SOP applications by using 3-D EM simulator and low temperature processes. Size of electrodes and thickness of high dielectric films are optimized for improving the performance characteristics of the proposed embedded MIM capacitors at high frequency regime. The selected thicknesses of the $BaTiO_3$ film are $12{\mu}m$, $16{\mu}m$, and $20{\mu}m$. The fabricated MIM capacitor with dielectric constant of 30 and thickness of $12{\mu}m$ has capacitance density of $21.5p\;F/mm^2$ at 100MHz, maximum quality factor of 37.4 at 300 MHz, a quality factor of 30.9 at 1GHz, self resonant frequency of 5.4 GHz, respectively. The measured capacitances and quality factors are well matched with 3-D EM simulated ones. These embedded capacitors are promising for SOP based advanced electronic systems with various functionality, low cost, small size and volume.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.7
• /
• pp.655-661
• /
• 2006

Dielectric and piezoelectric properties of PMN-PZT ceramics with a high mechanical quality factor$(Q_m)$ and a low temperature sintering temperature were investigated as a function of PZN substitution in order to develop multilayer piezoelectric transformer for AC-DC converter. Multilayer piezoelectric transformers were subsequently manufactured using the PMN-PZN-PZT ceramic offering the optimal behavior and then the electrical performance were invetigated. At the sintering temperature of $940^{\circ}C$, density, electromechanical coupling factor$(k_p)$, mechanical qualify factor$(Q_m)$ and dielectric constant$(\varepsilon_r)$ of 8 mol% PZN substituted specimen were $7.73g/cm^3$, 0.524, 1573 and 1455, respectively. The PZN substitution caused a increase in the dielectric constant and the electromechnical coupling factor. The voltage step-up ratio of multilayer piezoelectric transformer showed the maximum value at near the resonant frequency of 76.55 kHz and increased according to the increase of load resistance. The multilayer piezoelectric transformer with the output impedance coincided with the load resistance showed the temperature increase of less than $20^{\circ}C$ at the output power of 10 W. Based on the results, the manufactured multilayer transformer using the low temperature sintered PMN-PZN-PZT ceramics can be stably driven for both step-up and down transformers.

• Journal of the Microelectronics and Packaging Society
• /
• v.9 no.2
• /
• pp.11-17
• /
• 2002

Polymer/ceramic composite is of great interest as a dielectric material for embedded capacitors. This paper is concerned in the effects of $BaTiO_3$ particle size on epoxy/$BaTiO_3$ composite films for embedded capacitors. 6 different size powders smaller than 1 $\mu\textrm{m}$ in diameter and bisphenol-A type epoxy were used for this experiment. Dielectric constant of the epoxy/$BaTiO_3$ composite capacitors increases as the powder size increases at the same powder loading, which is due to the increase of tetragonality of the powders as particle size increases. And leakage current of the capacitors also increases dramatically as the powder size increases. It was explained that this is due to the decrease of the number of $BaTiO_3$epoxy/$BaTiO_3$ potential barriers per unit length and, moreover, the enhancement of potential barrier lowering effects caused by increase of potential drop per one barrier. As a result, there is tradeoff between high dielectric constant and low leakage current in the epoxy/$BaTiO_3$ composite capacitors. So it is important to select proper size $BaTiO_3$ powders in accordance with needs.

• Journal of the Korean Vacuum Society
• /
• v.7 no.3
• /
• pp.267-267
• /
• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films have been of interest due to their lower dielectric constant and compatibility with existing process tools. However instability issues related to bond and increasing dielectric constant to water absorption when the SiOF films was exposured to atmospheric ambient. Therefore, the purpose of this research is to study the effect of post oxygen plasma treatment on the resistance of moisture absorption and reliability of SiOF film. Improvement of moisture absorption resistance of SiOF film is due to the forming of thin SiO₂layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the number of Si-F bonds that tend to associate with OH bonds. However, the dielectric constant was increased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and 300℃ of substrate temperature.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.301.2-301.2
• /
• 2016

Metal-oxide thin-film transistors (TFTs) have gained a considerable interest in transparent electronics owing to their high optical transparency and outstanding electrical performance even in an amorphous state. Also, these metal-oxide materials can be solution-processed at a low temperature by using deep ultraviolet (DUV) induced photochemical activation allowing facile integration on flexible substrates [1]. In addition, high-dielectric constant (k) inorganic gate dielectrics are also of a great interest as a key element to lower the operating voltage and as well as the formation of coherent interface with the oxide semiconductors, which may lead to a considerable improvement in the TFT performance. In this study, we investigated the electrical properties of solution-processed high-k strontium-doped AlOx (Sr-AlOx) gate dielectrics. Using the Sr-AlOx as a gate dielectric, indium-gallium-zinc oxide (IGZO) TFTs were fabricated and their electrical properties are analyzed. We demonstrate IGZO TFTs with a 10-nm-thick Sr-AlOx gate dielectric which can be operated at a low voltage (~5 V).