• Polymer(Korea)
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• v.36 no.4
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• pp.413-419
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• 2012

Multi-functional urethane acrylate monomers as the curing agent of poly(phenylene ether) (PPE) were synthesized and then the urethane bond formation was checked by FTIR spectrometry and NMR analysis. The synthesized monomers were mixed with PPE and fabricated to dielectric substrates. After forming PPE/monomer composite sheets by a film coater, several sheets were laminated to a test substrate in a vacuum laminator and then its properties depending on the type and the amount of monomers, such as dielectric constant, dielectric loss, and peel strength, were measured. Between the two different hydroxyl acrylates, when the monomer synthesized with 2-hydroxy-3-phenoxypropyl acrylate containing a phenyl group was used as a curing agent, a smaller dielectric loss was obtained and the dielectric constant and loss decreased with a decrease in the amount of the monomer. The peel strength values of the test substrates, however, did not show any specific difference between the cases of two synthesized monomers. As a result, it was obtained the polymer substrate for high frequency application having peel strength of about 10 N, low dielectric constant of 2.54, and low dielectric loss of 0.0027 at 1 GHz.

• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.33-36
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• 2005

Effect of heating rate was studied on consolidation of the low-temperature-sinterable PMN-PT-BT powder by varying the heating rate from 5, 10, to $20^{circ}C/min$. Slow rate of $5^{circ}C/min$ showed more homogeneous microstructure than high rate of 10 or $20^{circ}C/min$ due to low PbO (m.p. $886^{circ}C$) evaporation at 850^{circ}C$. It showed sintered density of $7.93 g/cm^{3}$, room temperature dielectric constant of 15300, and dissipation factor of $0.92\%$.

• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.323-329
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• 2009

Influences of ceramic filler types and dose on the sintering, phase evolution, and dielectric properties of ceramic/CaO-$Al_2O_3-SiO_2$ glass composites were investigated. All of the specimens were sintered at $900^{\circ}C$ for 2 h, which conditions are required by the lowtemperature co-firing ceramic (LTCC) technology. Ceramic fillers of $Al_2O_3,\;SiO_2$, kaolin, and wollastonite were used. The addition of $Al_2O_3$ filler yielded the crystalline phases of alumina and wollastonite, and the densification over 95% of the relative density was achieved up to 50 wt% addition of the filler. For the cases of the fillers of $SiO_2$, kaolin, and wollastonite, crystalline phases of quartz, mullite, and wollastonite formed, while the densification decreased monotonically with the filler addition. In overall, all the investigated fillers with 10 wt% addition resulted in a reasonable sintering (over 95 %) and low dielectric constants (less than 6), demonstrating the feasibility of the investigated composites for application to a LTCC substrate material with a low dielectric constant.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.36.2-36.2
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• 2009

Low dielectric materials have been great attention in the semiconductor industry to develop high performance interlayer dielectrics with low k for Cu interconnect technology. In our study, the dielectric properties of SiOC /SiO2 thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. Polyphenylcarbosilane was synthesized from thermal rearrangement of polymethylphenylsilane around $350^{\circ}C{\sim}430^{\circ}C$. Characterization of synthesized polyphenylcarbosilane was performed with 29Si, 13C, 1H NMR, FT-IR, TG, XRD, GPC and GC analysis. From FT-IR data, the band at 1035 cm-1 is very strong and assigned to CH2 bending vibration in Si-CH2-Si group, indicating the formation of the polyphenylcarbosilane. Number average of molecular weight (Mn) of the polyphenylcarbosilane synthesized at $400^{\circ}C$ for 6hwas 2, 500 and is easily soluble in organic solvent. SiOC/SiO2 thin film was fabricated on ton-type silicon wafer by spin coating using 30wt % polyphenylcarbosilane incyclohexane. Curing of the film was performed in the air up to $400^{\circ}C$ for 2h. The thickness of the film is ranged from $1{\mu}m$ to $1.7{\mu}m$. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and show a dielectric constant as low as 2.5 without added porosity. The SiOC /SiO2 thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

• Korean Journal of Materials Research
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• v.34 no.6
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.6
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• pp.251-255
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• 2007

We made $(1-x)BCB-xBNT(BaNd_2Ti_4O_{12})$ (x=20, 30, 40, 50 vol%) composite thick film with a high dielectric constant and low loss by the hand casting method. Dielectric constant and dielectric loss of prepared thick film are measured at 1MHz and curing behavior of the film are observed through thermal analysis such as DSC. We investigated the effect of contents of BNT filler and curing behavior of film on dielectric properties of BCB-BNT composite. Dielectric constant increased with increasing BNT filler from 20 to 50 vol% and dielectric loss ($tan{\delta}$) decreased with increasing BNT filler. Dielectric constant and loss ($tan{\delta}$) of composite material was not nearly dependent on the curing behavior. But as a result of TCC (Temperature Characteristics of Coefficient) decreased with increasing the curing temperature, we confirmed that the curing of these composite system is most stable above $250^{\circ}C$.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Journal of Powder Materials
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• v.17 no.4
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• pp.289-294
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• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.260-260
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• 2007

Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.1
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• pp.111-117
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• 2001

The temperature dependence of dielectric constant and electrical conductivity for the BBPS glasses system was studied over a temperature range between $30^{\circ}C$ and $500^{\circ}C$ and at a frequency ranged from $10^3$ Hz to $10^7$ Hz. The dielectric constant ${\varepsilon}$ at room temperature of $xB_2O_3-yBi_2O_3-zPbO-5SiO_2 $ glasses was measured to be 15 at $10^5$ Hz for all samples and found to be almost frequency independent. At the relatively low temperature ranger (<$70^{\circ}C$), the dielectric constant was almost temperature independent and above that it increased with increasing temperature: the rate of increase being different at different frequencies. This behavior could be explained on the basis of the presence of molecular dipoles. The dielectric constant was found to depend on the composition as well as the crystalline phases formed in the glass matrix.