• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.238-243
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• 2002

The dielectric properties and synthesis of $LaAIO_3$ ceramics from mixtures of $La_2O_3$ and $AI(OH)_3$ via ground(planetary ball mill) and unground(wet ball mill) were investigated. The single phase $LaAIO_3$ of ground powder was formed at $1000^{\circ}C$, while that of unground powder was formed at $1300^{\circ}C$. Density and grains of ground sample showed 98% of theory density and a uniform size of 0.75\mu\textrm{m}$, respectively, However those of unground sample showed 93% and non-uniform sizes of 4-5 $\mu\textrm{m}$. Dielectric constant and temperature coefficient of capacitance ($\tau$c) of both ground and unground samples were 21~22 and +70~74 ppm$/^{\circ}C$, respectively. Dielectric loss of ground sample(0.0004) was 10 times as low as that of unground sample(0.003) due to a uniform and small gram size.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.114-114
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• 2012

Metal-oxide-semiconductor field-effect transistors (MOSFETs)의 critical dimension (CD)가 sub 45 nm로 줄어듬에 따라 기존에 gate dielectric으로 사용하고 있는 SiO2에서 발생되는 high gate leakage current 때문에 새로운 high dielectric constant (k) 물질들이 연구되기 시작하였다. 여러 가지 high-k 물질 중에서, aluminum-oxide (Al2O3)는 높은 dielectric constant (~10)와 전자 터널링 barrier height (~2eV) 등을 가지기 때문에 많은 연구가 되고 있다. 그러나 Al2O3를 anisotropic한 patterning을 하기 위해 주로 사용되고 있는 halogen-based 플라즈마 식각 과정에서 나타나는 Al2O3와 하부 layer간의 낮은 식각 selectivity 뿐만 아니라 표면에 발생되는 defect, stoichiometry modification, roughness 변화 등의 많은 문제점들로 인하여 device performance가 감소하기 때문에 이를 해결하기 위한 많은 연구들이 진행중이다. 따라서 본 연구에서는 실리콘 기판위의 atomic layer deposition (ALD)로 증착된 Al2O3를 BCl3/Ar 중성빔을 이용하여 원자층 식각한 후 식각 특성을 분석해 보았다. Al2O3 표면을 BCl3로 absorption시킨 후 Ar 중성빔으로 desorption 시키는 과정에서 volatile한 aluminum-chlorides와 boron oxychloride가 형성되어 layer by layer로 제거됨을 관찰 할 수 있었다.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.24-29
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• 2002

In this paper, the microstructure and the dielectric properties of Sr$\_$1-x/CaxTiO$_3$(0$\leq$x$\leq$0.2)-based grain boundary layer ceramics were investigated. The sintering temperature and time were 1420∼152 0$\^{C}$ and 4 hours in N$_2$ gas, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca, but the average grain size was increased with increase of sintering temperature. The second phase foamed by the thermal diffusion of CuO from the surface leads to verb high apparent dielectric constant, $\xi$$\_$r/>50000 and low dielectric loss, tan$\delta$<0.05. X-ray diffraction patterns of Sr$\_$1-x/CaxTiO$_3$ exhibited cubic structure, and the peaks shifted upward and the peak intensity were decreased with x. This is due to the lattice contraction as Sr is replaced by Ca with a smaller ionic radius. The specimens treated thermal diffusion for 2hrs in 1150$\^{C}$ exhibited nonlinear current-voltage characteristic, and its nonlinear coefficient(a) was overt 7.

• 한국세라믹학회지
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• 제39권2호
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• pp.120-125
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• 2002

AC powder EL 소자를 절연층의 유전재료와 후면전극의 전기비저항을 변화시켜 스크린 프린팅법으로 제조하였다. 제조된 소자의 광전기적 특성을 평가하기 위하여 인가 전압은 50∼300 $V_{rms}$까지 변화시켜 휘도 및 전류밀도를 측정하였다. 주파수 및 전압공급원은 정현파 발생 장치로서 frequency generator를 이용하였다. 휘도는 luminometer 의해 측정되었으며 전류밀도 측정을 위하여 multimeter를 사용하였다. 또한 유전층에 대한 유전율을 후막 제조 후 impedance analyser(HP 4194 A)를 이용하여 측정하였다. $TiO_2$ 분말을 $BaTiO_3$에 첨가함에 따라 유전율의 향상으로 초저가형 AC powder EL 소자의 유전층에 적용함으로써 거의 비슷한 전류밀도 하에 50 cd/$m^2$ 정도의 향상된 휘도를 얻을 수 있었다. 저전력 소모형 AC powder EL 소자의 유전층에 적용시 상용분말을 이용한 경우보다 용액 연소법에 의해 제조된 $BaTiO_3$ 분말을 이용한 경우가 더욱 향상된 85 cd/$m^2$ 정도의 휘도를 얻을 수 있었다. 또한 후면전극의 전기 비저항을 조절함으로써 AC powder EL 소자의 휘도는 비교적 감소하지만 전류밀도를 낮출 수 있었다.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1017-1024
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• 2000

Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 춘계 학술발표강연 및 논문개요집
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• pp.95-95
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• 2002

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 창립10주년 제20회 학술발표회
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• pp.107-107
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• 2001

• Transactions on Electrical and Electronic Materials
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• 제2권1호
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• pp.1-6
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• 2001

$C_{x}F_{y}$ polymer film was deposited in rf and dc Fluorinert vapor ($C_{7}F_{16}$) plasmas. In the plasma phase, the spatial distribution of optical emission spectra and the temporal concentration of decomposed species were monitored, and kinetics of the $C_{7}F_{16}$ decomposition process was discussed. Deposition of $C_{x}F_{y}$ film has been tried on substrates of stainless steel, glass, molybdenum and silicon wafers at room temperature in the vapor pressures of 40 and 100 Pa. The films deposited in the rf plasma showed excellent electrical properties as an insulator for multi-layered interconnection of deep-submicron LSI, i.e. the low dielectric constant ∼2.0, the dielectric strength ∼2 MV/cm and the high deposition rate ∼100nm/min at 100W input power.

• 전기의세계
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• 제29권8호
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• pp.524-531
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• 1980

In order to investigate the effect of inorganic dielectric fine particle mixed in Low Density Polyethylene on the deterioration by treeing, a comparative study for initiation and development of the tree has been carried out between the pure thin film specimen and the same geometrical specimen mixed with a constant weight percent by a defiend particle size of $Al_{2}$O$_{3}$ and SiO$_{2}$, having larger dielectric constants than that of the base material. According to the results, it has been observed that as increasing dielectric constant, the initiation of tree is expedited, however, the development of the tree reached at the surface of filler particles shows the suppressive trends. From these facts, a reasonable interpretation may be possible by considering the effect of intensified electrical field around the tip in the presence of filler particles, that the initiation and the development of tree are a mechanical break down process caused by Maxwell stress due to the concentration of electrical field at the tip. This suppressive effect is specifically suggestive for the reason that a discharge route must be constructed around the particle surface because of the intensified field strength near filler, which, in turn, reduces the geometrical curvature of the tip so that the local intensity of electrical field can be relaxed. Further more an experimental evidence for this assumption was able to observe in this investigation.

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1090-1095
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• 2008

The SiOCH films that low dielectric interlayer dielectric materials were deposited on p-type Si(100) substrates through the dissociation of BTMSM precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed even greater reductions of the maximum capacitance and the dielectric constant of the SiOCH samples, owing to reductions of surface charge density. we confirmed this result with derivative of C-V characteristic, leakage current density. The maximum capacitance and leakage current density were respectively decreased about 4 pF, 60% after annealing. The average of low-k value is approximatly 2.07 after annealing.