• Journal of the Optical Society of Korea
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• 제6권3호
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• pp.59-71
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• 2002

Photonic band gap structures have a high potential for nearly zero-threshold lasers. This paper describes new-types of low-threshold photonic crystal lasers fabricated in InGaAsP slab waveguides free-standing in air. Two-types of photonic crystal lasers are studied. One is a single-cell nano-cavity laser formed in a square array of air holes. This photonic band gap laser operates in the smallest possible whispering gallery mode with a theoretical Q >30000 and exhibits low threshold pump power of 0.8 mW at room temperature. The nther laser does not have any cavity structure and the lasing operation originates from the enhanced optical density of states near photonic band edges. A very low threshold of 35 $\mu$W (incident pump power) is achieved from this laser at 80 K, one of the lowest values ever reported. This low threshold is benefited from low optical losses as well as enhanced material gain at low temperature.

• 전자공학회논문지A
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• 제29A권3호
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• pp.66-71
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• 1992

We fabricated highly stable a-Si:H solar cell using low band gap intrinsic layer fabricated by RP-CVD. We obtained a-Si:H with optical band gap of less than 1.65 eV with deposition rate of 0.18 $\AA$/sec, and used this material as bottom i-layer of a-Si:H double stacked solar cells. We have succeeded in the fabrication of very stable a-Si:H double stacked solar cell of which the conversion efficiency is about 9% and the degradation is less than 4% after light illumination for 100h under 350mW/cm$^{2}$.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.65-71
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• 2011

Properties of each layer in DSSC were investigated to improve solar cell characterstics. Also in this study, low costsolar simulator system is fabricated and used. Efficiency of DSSC is better in the case of thinner semiconductive layer, because thick semiconductive layer is acted as resistor. Sc-doped ZnO thin films showed better electrical property by proper donor doping effect. Among the dyes, DSSC containing N719 showed higher efficiency, because N719 have smaller electron affinity and shallow band gap.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.724-728
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• 2005

Electro-optic characteristics of reflective hybrid aligned liquid crystal (LC) cell driven by fringe field using a nematic LC with positive dielectric anisotropy have been studied. Optimized optical configurations are achieved by using a single polarizer, half-wave film and a cell with quarter-wave retardation. The simulation results shows an optimum cell retardation of $0.30{\mu}m$. This value may allow a practical cell gap larger than $3{\mu}m$, which makes it easy to control in the manufacturing process. Furthermore, this LC cell with optimized cell parameters shows low wavelength dispersion and the contrast ratio greater than 5 over exists about $100{\circ}$ in vertical direction and $160{\circ}$ in horizontal direction. Also, when using the LC with positive dielectric anisotropy rather than negative dielectric anisotropy, the display shows low power consumption and fast response time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.227-227
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• 1999

Plasma display panel(PDP) is a leading technology for large-area flat panel displays. A current issue in operating the PDP cell is that the efficiency of the PDP cell is very low. To increase the efficiency of the PDP cell, the visible light needs to be maximized and the power consumption minimized. Since the excited xenons are related to the production of the visible light, it is important to optimize the cell geometry and the gas composition that produce the excited xenons more efficiently. A 2D-fluid code (FL2P) is developed and used to simulate the plasma dynamics and the radiation transport in the PDP cell. The cell is optimized with the code for various operating conditions and cell dimensions such as the voltage pulse, electrode length, electrode spacing, gap size, dielectric constant, gas mixture ratio, pressure, and pulse duration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.206-209
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• 2004

We investigated response characteristics of liquid crystal display(LCD) with different operating mode of nematic liquid crystals (NLCs) such as $45^{\circ}$twist nematic (TN), $67.3^{\circ}$TN and ECB(electrical controlled birefringence) on a rubbed polyimide (PI) surface. The three kinds of LCD operating mode obtain stable EO performance. Low transmittances of the $45^{\circ}$TN and $67.3^{\circ}$TN cell on the rubbed PI surface were achieved by using low cell gap d. The fast response time of ECB cell among the three kinds of LCD operating mode was measured.

• EDISON SW 활용 경진대회 논문집
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• 제4회(2015년)
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• pp.378-381
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• 2015

To produce low cost and efficient photovoltaic cells, inorganic-organic lead halide perovskite materials appear promising for most suitable solar cells owing to their high power conversion efficiency. Most recent research showes that formamidinium lead iodide ($FAPbI_3$) with methylammonium lead bromide ($MAPbBr_3$) improves the power conversion efficiency of the solar cell to more than 18 per cent under a standard illumination because incorporated $MAPbBr_3$ makes $FAPbI_3$-relatively unstable but comparatively narrow band gap-more stable composition. In respect to first principle study, we investigated band gap of $MAPbI_3$, $FAPbI_3$, $MAPbBr_3$, $(FAPbI_3)_{0.89}-(MAPbBr_3)_{0.11}$ and 0.615(eV), 0.466, 1.197, 0.518 respectively through EDISON DFT software. These results emphasize enhancing structure stability is important factor as well as finding narrow band gap.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.72.1-72.1
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• 2010

Thin film a-Si solar cells deposited by PECVD have many advantages compared to the traditional crystalline Si solar cells. They do not require expensive Si wafer, the process temperature is relatively low, possibility of scaling up for mass production, etc. In order to produce thin film solar cells, understanding the relationship between the material characteristics and deposition conditions is important. It has been reported by many groups that the band gap of the a-Si material and the deposition rate has an linear relationship, when RF power is used to control both. However, when the process pressure is changed in order to control the deposition rate and the band gap, a diversion from the well known linear relationship occurs. Here, we explain this diversion by the deposition condition crossing different plasma regions in the Paschen curve with a simple model. This model will become a guide to which condition a-Si thin films must be fabricated in order to get a high quality film.

• 한국정보전자통신기술학회논문지
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• 제8권4호
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• pp.257-262
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• 2015

본 논문에서는 SRR-DGS 공진기를 제안하고 그것의 등가회로를 해석하여 저역통과 필터 설계에 적용하였다. 기존의 덤벨형 DGS 구조로 된 것과 비교하였을 때 제안된 구조는 차단주파수 근처에서 스커트 특성과 저주파 대역의 평탄도 특성이 우수하였다. 기본적인 SRR-DGS 셀에서 등가회로의 병렬 커패시턴스를 증가하기 위해 전송선로에 개방 스터브를 추가함으로써 대역외 고주파 억압 특성을 개선하였다. 이와 같은 등가회로의 해석적인 방법으로 개선된 SRR-DGS 셀의 특성이 연구되어 차단 특성이 우수하고 고주파 억압 특성이 35dB이상인 저역통과 필터의 설계에 적용되었다. 그리고 공진기의 측면 길이와 링 간격 등과 같은 물리적 크기와 전송특성과의 관계를 해석하여 나타내었다. 개방 스터브의 면적을 증가하면 차단 주파수 이상의 대역에서 억압 특성이 개선되었다. SRR-DGS에 대해 유도해낸 등가 파라미터와 회로의 정확성을 검증하기 위해 SRR-DGS셀을 이용한 저역통과 필터를 설계하고 제작하였다.

• 한국재료학회지
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• 제18권10호
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• pp.515-520
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• 2008

We fabricated 10 nm-$TiO_2$ thin films for DSSC (dye sensitized solar cell) electrode application using ALD (atomic layer deposition) method at the low temperatures of $150^{\circ}\;and\;250^{\circ}$. We characterized the crosssectional microstructure, phase, chemical binding energy, and absorption of the $TiO_2$ using TEM, HRXRD, XPS, and UV-VIS-NIR, respectively. TEM analysis showed a 10 nm-thick flat and uniform $TiO_2$ thin film regardless of the deposition temperatures. Through XPS analysis, it was found that the stoichiometric $TiO_2$ phase was formed and confirmed by measuring main characteristic peaks of Ti $2p^1$, Ti $2p^3$, and O 1s indicating the binding energy status. Through UV-VIS-NIR analysis, ALD-$TiO_2$ thin films were found to have a band gap of 3.4 eV resulting in the absorption edges at 360 nm, while the conventional $TiO_2$ films had a band gap of 3.0 eV (rutile)${\sim}$3.2 eV (anatase) with the absorption edges at 380 nm and 410 nm. Our results implied that the newly proposed nano-thick $TiO_2$ film using an ALD process at $150^{\circ}$ had almost the same properties as thsose of film at $250^{\circ}$. Therefore, we confirmed that the ALD-processed $TiO_2$ thin film with nano-thickness formed at low temperatures might be suitable for the electrode process of flexible devices.