• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1068-1071
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• 2007

When a dielectric layer, in-cell retarder (ICR) is formed between electrode and LC layer to get a single gap transflective fringe-field switching (FFS) display, the operating voltage ($V_{op}$) is highly increased due to the thickness of dielectric material. But, we also knew the phenomenon that the increasing rate of Vop is different whether the 1st common electrode was composed of plate type or slit type. In this paper, the common electrode in transmissive part was composed of slit type which had less steepness effect of the Vop and in reflective part was composed of plate type. The rubbing angle of reflective part can be adjusted properly to match the voltage dependent transmittance and reflectance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.435-436
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• 2007

In general, Single gap transflective FFS display has an in-cell retarder (ICR) between reflective electrode and liquid crystal (LC) layer. Therefore, Operating voltage is highly increased due to this thick dielectric material. But, we also knew the phenomenon that the increasing rate of Vop is different whether the 1st common electrode was composed of plate type or slit type. In this paper, the common electrode in transmissive part was composed of slit type which had less steepness effect of the V op and in reflective part was composed of plate type. The rubbing angle of reflective part can be adjusted properly to match the voltage dependent transmittance and reflectance.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.112.1-112.1
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• 2011

The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

• 전기학회논문지
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• 제57권2호
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• pp.261-267
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• 2008

One of the most important issues in fence-type PDP is low luminance and luminous efficiency. To improve luminance and luminous efficiency, new sustain electrode structure which contains long discharge gap is necessary. However, it causes rise of firing voltage. In this paper, a new fence electrode structure is proposed in order to solve these problems. To drop the firing voltage, tow hump shaped electrodes is added on the main discharge electrode, and distance between two humps is controlled. The experimental results show that the test panel with the narrow horizontal gap(40um) between two humps shows low firing voltage by 17V compared with 80um gap in spit of similar luminance and luminous efficiency.

• 한국정밀공학회지
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• 제25권5호
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• pp.96-102
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• 2008

Manufacturing of printed electronics using printing technology has begun to get into the hot issue in many ways due to the low cost effectiveness to existing semi-conductor process. This technology, with low cost and high productivity, can make it possible to produce printed electronics such as TFT, solar cell, RFID Tag, printed battery, and so on. In this study, apparatus of gravure-offset printing are developed for fine line-width/gap printing and the results obtained from the apparatus shows that it is possible to make around 20 micro-meter line-width/gap printing patterns. The roll-to-roll printing system for fine line-width printing based on primary experiment is presented. The printing results obtained from the system shows around 30 micro-meter line-width/gap printing patterns.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.121-123
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• 2002

Fast response characteristics of twisted nematic liquid crystal display (TN-LCD) cell with different nematic liquid crystals (NLCs) and cell gap on a rubbed polyimide (PI) surface were studied. High transmittance and fast response time of the TN-LCD on the rubbed PI surface were achieved by using high birefringence ($\Delta$ n) and low cell gap. It is considered that the transmittance and response time of the TN-LCD on the rubbed PI surface decreased as $\Delta$ nd decrease.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.192-197
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• 2017

Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.

• Journal of Information Display
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• 제1권1호
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• pp.14-19
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• 2000

Due to distinct properties of plastic substrates such as poor thermal resistance, non-rigidness and high thermal expansion, it is difficult to fabricate plastic film LCDs by conventional LCD processes. Poor thermal resistance and high thermal expansion of substrates induced deformation of substrates surface, mismatch of thermal expansion between ITO electrodes and substrates resulted in defects in the ITO electrodes during the high temperature process. Defects of ITO electrodes and non-uniform cell gap caused by non-rigid and flexible properties were also observed in the pressuring process. Based on in these observations, we used a newly developed material and fabrication process to prevent deformation of substrates, defects of electrodes and to maintain uniform cell gap. The maximum temperature of the process is limited up to $110^{\circ}C$ and pressure loaded during the process is five times less than conventional one. With these invented processes and materials, we obtained highly reliable Plastic Film STN LCDs whose electro-optical characteristics are better than or equivalent to those of typical glass LCDs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.479-482
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• 2004

We report a method for simultaneous measurements of cell gap, twist angle, birefringence dispersion of liquid crystal (LC) material and alignment directions in filled reflective LC cells. The method is based on spectral measurements of the LC cell reflectivity for three orientations ($0^{\circ},45^{\circ},90^{\circ}$) of the exit polarizer and may be applied for LC cells with low and high gaps.

• 한국응용약물학회:학술대회논문집
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• 한국응용약물학회 1993년도 제1회 추계심포지움 and 제2회 생리분자과학연구센터워크숍
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• pp.28-33
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• 1993

Regulation of nerve growth factor (NGF)-induced neuronal differentiation by GTPase activating protein(GAP) and its mechanism were investigated in rat pheochromocytoma cell line, PCl2. Overexpression of GAP caused the delay in the onset of neurite outgrowth of PCl2 eel Is in response to NGF. GAP has been known to inhibit p21$\^$ras/, the activated form of which induces neuronal differentiation. Therefore, the activity of p21$\^$ras/ was compared in control cells and cells overexpressing GAP indirectly by measuring the activities of B-Raf and MAP kinase that are known to be positively regulated by p21$\^$ras/. Surprisingly, NGF-induced activities of these two proteins were the same in control eells and GAP-overexpressing cells. Activities of Trk, PLC-r and SMC that act at a site upstream to p21$\^$ras/ in NGF signal transduction pathway were not also affected by GAP overexpression. Interestingly, however, the extent of tyrosine phosphorylation of SNT was found to be remarkably low in cells overexpressing GAP. It has been shown previously that neurotrophins and not mitogens induce SNT tyrosine phosphorylation in PCl2 cells. Thus it is possible that the timing of NGF-induced neuronal differntiation may be in part regulated by SNT and the slower onset of neurite outgrowth in cells overexpressing GAP may be through the inhibition of SNT by GAP.