• Title/Summary/Keyword: Low Temperature Solar thermal

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A Study on the Relationship between the Summertime Night Cooling Rate and Meteorological Elements in Daegu (대구의 여름철 야간 냉각량과 기상요소와의 관련성 연구)

  • Kim, Ha-Young;Kim, Hae-Dong
    • Journal of Environmental Science International
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    • v.30 no.10
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    • pp.821-831
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    • 2021
  • The relationship between night cooling rate and meteorological elements was investigated over the past five years (2016-2020), using weather data from the new (Daegu(143)) and old (Shinam(860)) Daegu Regional Meteorological Agency located in the suburban and urban regions, respectively. There was a correlation between the total daily amount of solar radiation (Stot) and the night cooling rate in the both regions. However, a higher correlation was observed at the new Daegu Regional Meteorological Agency station (Daegu(143)). In particular, data from the new Daegu Regional Meteorological Administration's observatory, which experiences a low thermal storage effect caused by artificial structures, showed a higher correlation between nighttime cooling and weather factors. The reason for this is that the lesser the heat storage effect caused by the artificial structures, the better the effect of surface radiation cooling on temperature reduction. These findings confirm that the correlation between night cooling and weather factors can be used to assess the impact of artificial structures in cities.

IR CHARACTERISTICS OF MOLECULAR CLOUDS IN THE REGION OF SUPERSHELL GS234-02

  • JUNG JAE HOON;LEE JUNG KYU;YOON TAE SEOG
    • Journal of The Korean Astronomical Society
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    • v.30 no.1
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    • pp.71-81
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    • 1997
  • We have studied the IR properties of molecular clouds in the region of the supershell GS234-02 using IRAS and COBE data. The mean values of dust color temperature and optical depth at $240{\mu}m$ are derived to be $15.4\pm1.5K\; and\;9.0\pm5.7\times10^{-4}$, respectively, which agree well with those determined by Sodroski et al.(1994) for the outer Galaxy. Mean IRAS colors, $R_{12}/100= 0.074,\; R_{25}/100= 0.052,\; R_{60/100}= 0.219$, indicate that the abundance of PAHs is enhanced but other particles are nearly the same as those of the solar neighborhood. We found the anticorrelation between $R_{100/140}\;and\;R_{140/240}$. It cannot be explained by the thermal emission of traditional big grains. The anticorrelation implies that, at high ISRF, $T_{100/140}$ underestimates the equilibrium temperature, while $T_{140/240}$ overestimates it and, at low ISRF, vice versa. Therefore we propose to use the intensity ratio, $R_{100/240}$ as a dust thermometer.

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Electrical properties of n-ZnO/p-Si heterojunction photovoltaic devices

  • Kang, Ji Hoon;Lee, Kyoung Su;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.306.1-306.1
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    • 2016
  • ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

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Analyses on Comparison of UTCI, PMV, WBGT between Playground and Green Space in School (학교 운동장과 녹지공간의 UTCI, PMV, WBGT 비교 분석)

  • Yoon, Young-Han;Park, Seung-Hwan;Kim, Won-Tae;Kim, Jeong-Ho
    • Korean Journal of Environment and Ecology
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    • v.28 no.1
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    • pp.80-89
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    • 2014
  • This study of the school's outdoor space for relaxing and activity of the two most numerous students, high heat and low heat with a green space, playground targets of thermal comfort indicators UTCI, PMV, WBGT using the thermal comfort students feeling compare the analyzed. The destination of this study, school facilities of Nam-gu, Namdong- gu, Incheon were studied and the investigation period was conducted from July to August. List of measurement, in the case of thermal comfort indicators, UTCI, PMV, WBGT was measured in the case of green, ratio of green coverage and GVZ was measured. GVZ analysis were as follows: A school ($4.71m^3/m^2$) B school ($3.34m^3/m^2$) C school ($0.38m^3/m^2$). Comparative analysis of the results of thermal comfort indicators by schools, UTCI was Green space $26.15{\sim}31.38^{\circ}C$ and playground $40.66{\sim}42.94^{\circ}C$, PMV values were 1.76 to 2.66 as a green space. WBGT was Green space $26.15{\sim}31.38^{\circ}C$, playground $31.67{\sim}34.53^{\circ}C$. Comparative analysis of the results of thermal comfort indicators UTCI, PMV, WBGT all A school, B school, C school, on the green space was comfortable levels more than playground. The results of the school type thermal comfort and green correlation analysis of thermal comfort UTCI, PMV, WBGT all solar radiation, globe temperature, and a positive correlation shown solar radiation, globe temperature is not comfortable, the higher was considered. UTCI, PMV, WBGT of thermal comfort indicator all ratio of green coverage, GVZ and negative correlation appears ratio of green coverage, GVZ was increased due to the lowering of the value of thermal comfort indicators was considered to be comfortable.

Structural and Optical Properties of ZnS Thin Films Fabricated by Using RF Sputtering and Rapid Thermal Annealing Process for Buffer Layer in Thin Film Solar Cells (박막태양전지 버퍼층 적용을 위해 RF 스퍼터링 및 급속열처리 공정으로 제작한 황화아연 박막의 구조적 광학적 특성)

  • Park, Chan-Il;Jun, Young-Kil
    • The Journal of the Korea institute of electronic communication sciences
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    • v.15 no.4
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    • pp.665-670
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    • 2020
  • Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

저온 공정 온도에서 $Al_2O_3$ 게이트 절연물질을 사용한 InGaZnO thin film transistors

  • 우창호;안철현;김영이;조형균
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.11-11
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    • 2010
  • Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

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Analysis of Thermal Environment Modification Effects of Street Trees Depending on Planting Types and Street Directions in Summertime Using ENVI-Met Simulation (ENVI-Met 시뮬레이션을 통한 도로 방향별 가로수 식재 형태에 따른 여름철 열환경 개선 효과 분석)

  • Lim, Hyeonwoo;Jo, Sangman;Park, Sookuk
    • Journal of the Korean Institute of Landscape Architecture
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    • v.50 no.2
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    • pp.1-22
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    • 2022
  • The modification effects of street trees on outdoor thermal comfort in summertime according to tree planting types and road direction were analyzed using a computer simulation program, ENVI-met. With trees, the air temperature and wind speed decreased, and the relative humidity increased. In the case of mean radiant temperature (Tmrt) and human thermal sensation, physiological equivalent temperature (PET) and universal thermal climate index (UTCI), there was a decrease during the daytime. The greatest change among the meteorological factors by trees happened in Tmrt, and PET and UTCI showed similar patterns with Tmrt·The most effective tree planting type on thermal comfort modification was low tree height, wide tree crown, high leaf area index, and narrow planting interval (LWDN). Tmrt, PET and UTCI showed a large difference depending on shadow patterns of buildings and trees according to solar altitude and azimuth angles, and building locations. When the building shade areas increased, the thermal modification effect by trees decreased. In particular, results on the east and west sidewalks showed a large deviation over time. When applying the LWDN, the northwest, west and southwest sidewalks showed a significant reduction of 8.6-12.3℃ PET and 4.2-4.5℃ UTCI at 10:00, and the northeast, east and southeast sidewalks showed 8.1-11.8℃ PET and 4.4-5.0℃ UTCI at 16:00. On the other hand, when the least effective type (high tree height, narrow tree crown, low leaf area index, and wide planting interval) was applied, the maximum reduction was up to 1.8℃ PET and 0.9℃ UTCI on the eastern sidewalks, and up to 3.0℃ PET and 0.9℃ UTCI on the western ones. In addition, the difference in modification effects on Tmrt, PET and UTCI between the tree planting types was not significant when the tree effects were reduced by the effects of buildings. These results can be used as basic data to make the most appropriate street tree planting model for thermal comfort improvement in urban areas in summer.

Analysis of Temperature Influence Experiment on Green Spaces in Campus (캠퍼스 내 녹지공간의 온도분석 및 온도영향요인 규명 실험)

  • Kim, Jaekyoung;Kim, Wonhee;Kim, Eunil
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.2
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    • pp.511-520
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    • 2020
  • Owing to global warming, heat waves have become stronger in the summer, and research on improving the thermal environment of green spaces, such as urban parks, is being conducted. On the other hand, studies on improving the urban thermal environment, which is changing due to the greening pattern and the intensity of the wind, are still insufficient. This study analyzed the temperature of the green spaces on campus to understand the factors affecting the temperature changes. After investigating the covering condition and planting form of the site, factors, such as temperature, humidity, wind direction, wind speed, and illuminance, were measured. The most influential factors on the temperature distribution are evapotranspiration and wind - induced heat transfer. The other major factors affecting the temperature change were the type of cover, wind velocity/wind direction, type of planting, shade / solar irradiance. In the type of cover, the plant was classified as low temperature, and the asphalt pavement was classified as high temperature. In wind speed, instantaneous temperature was reduced by 1.2 ℃ in southern wind, 0.7 ℃ in the westerly wind, 0.4 ℃ in the north wind and 0.5 ℃ in the east wind when a wind of 3.5m/s or more was blown.

The Characteristics of High Temperature Crystallized Poly-Si for Thin Film Transistor Application (박막트랜지스터 응용을 위한 고온 결정화된 다결정실리콘의 특성평가)

  • 김도영;심명석;서창기;이준신
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.5
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    • pp.237-241
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    • 2004
  • Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.

MSC(Multi-Spectral Camera) 열제어 시스템 소개

  • Kong, Jong-Pil;Heo, Haeng-Pal;Kim, Young-Sun;Park, Jong-Euk;Jang, Young-Jun
    • Aerospace Engineering and Technology
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    • v.4 no.2
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    • pp.107-116
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    • 2005
  • As a unique payload of Komsat-2, MSC, comprising EOS(Electro-Optical Sub-system), PMU(Payload Management Unit) and PDTS(Payload Data Transmission Sub-system), is supposed to take pictures of one panchromatic and 4 multi-spectral image between wavelength 450mm~900mm, and is being under final Satellite I&T. It will perform the earth remote sensing with applications such as acquisition of high resolution images, surveillance of large scale disasters and its countermeasure, survey of natural resources, etc.. Under the hostile influence of the extreme space environmental conditions due to deep space and direct solar flux, the thermal design is especially of major importance in designing a payload. There are tight temperature range restrictions for electro-optical elements while on the other hand there are low power consumption requirements due to the limited energy source on the spacecraft. This paper describes details of thermal control system for MSC.

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