• Journal of information and communication convergence engineering
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• 제9권2호
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• pp.217-219
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• 2011

As silicon devices shrink and their density increases, the low dielectric constant materials instead of $SiO_2$ film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at $300{\sim}500^{\circ}C$ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant using by the structure of the metal/SiOC film/p-Si, chemical shift, thickness, refractive index and hardness. The trend of reflective index was inverse proportioned the thickness, but the dielectric constant was proportioned it. The dielectric constant decreased with decreasing the thickness and the increment of the refractive index.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.144-147
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• 2003

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.

• Elastomers and Composites
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• 제52권3호
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• pp.180-186
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• 2017

In this work, the effect of low-temperature dehydration of a poly(styrene-co-styrenesulfonic acid) (PSSA) membrane was investigated by differential scanning calorimetry, fourier transform infrared spectroscopy (FT-IR), electron magnetic resonancespectroscopy (EMR), and $^1H$- and $^{13}C$ solid-state nuclear magnetic resonance spectroscopy. These analyses were performed at room temperature for powdered PSSA specimens with and without dehydration and the following key observations were made. First, FT-IR analysis showed that low-temperature dehydration not only transformed the [${SO_3}^-{\cdots}H^+$] ionic pair in the non-hydrated PSSA to an $SO_3H$ group, but also induced the formation of -C=C- double bonds in the dehydrated PSSA. Second, the ${-SO_3}^{\bullet}$ radical was unambiguously identified by EMR spectroscopy. Third, H-abstraction was detected by $^1H$ magic-angle spinning spectroscopy. Finally, an unexpected color shift from white for the non-hydrated PSSA to a yellowish brown for the dehydrated sample was observed. In order to explain these experimental results, it was proposed that the formation of the intermediate hydrogen ($H^{\bullet}$) or hydroxyl radical ($HO^{\bullet}$) species was initiated by the dehydration process. The sespecies attacked the $SO_3H$ group and the tertiary proton at the ${\alpha}-carbon$, resulting in the formation of $-SO^{\bullet}$ radicals and -C=C- double bonds, which correlated with the color shift in the dehydrated PSSA sample. The semechanisms are useful for understanding the simultaneous loss of an aromatic ring and -SO- groups in the PSSA fuel cell membrane.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.21-21
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• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• 한국환경과학회지
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• 제5권6호
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• pp.749-755
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• 1996

In order to grasp a characterization of low boiling point chlorinated organic compounds, this study which were carried out at the 8 stations for precipitation samples in the Pusan area during the period from February to September 1995. As a result, low boiling chlorinated organic compounds were estimated that it was dissolved by a portion of precipitation, and it be able to shift at the surface of the each. Concentration of low boiling point chlorinated organic compounds in precipitation are increased with increase of temperature, and estimated that air pollution compounds of as a rule in atmosphere.

• 대한전자공학회논문지TC
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• 제42권9호
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• pp.1-10
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• 2005

본 논문에서는 디지털 방식으로 온도에 의한 왜곡을 보상할 수 있는 사전왜곡제거기 알고리듬을 제안하였다. 사전왜곡제거 알고리듬은 입력레벨에 따른 시스템 비선형 왜곡뿐만 아니라 온도에 따른 왜곡의 보상성분을 산출하여 베이스밴드 영역의 디지털 신호를 사전 왜곡함으로써 발생하는 왜곡을 상쇄시키는 알고리듬이다. 이와 같은 알고리듬의 우수성을 증명하기 위해 Saleh의 고출력 증폭기 모델에 적용하여 컴퓨터 모의실험을 한 결과, 기존의 A&P PD 방식보다 P1dB는 약 0.5dBm 증가하였고, 위상천이는 약 $0.8^{o}$ 감소하였으며, 온도보상 기법을 적용한 사전왜곡제거기 로 증폭기의 PldB를 약 2dBm 개선하였고, 위상천이는 약$0.1^{o}$ 이하로 안정시켰다. 또한 이 증폭기에 UMTS 신호 샘플을 인가 시 온도보상 기법을 적용한 사전왜곡 제거기의 IMD3가 온도보상 기법을 적용하지 않은 경우보다 10dBm 감소하였으며, 왜곡제거기가 없는 신호보다 19dBm 감소시킴으로써 우수한 선형성을 보였다.

• 대한금속재료학회지
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• 제49권10호
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• pp.818-822
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• 2011

ZnO nanorods were grown on Au-coated Si substrates by vapor phase transport (VPT) at the growth temperature of $600^{\circ}C$ using a mixture of zinc oxide and graphite powders as source material. Au thin films with the thickness of 5 nm were deposited by ion sputtering. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the ZnO nanorods. Five peaks at 3.363, 3.327, 3.296, 3.228, and 3.143 eV, corresponding to the free exciton (FX), neutral donor bound exciton ($D^{\circ}X$), first order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, and FX-3LO emissions, were obtained at low-temperature (10 K). The intensity of these peaks decreased and their position was red shifted with the increase in the temperature. The FX emission peak energy of the ZnO nanorods exhibited an anomalous behavior (red-blue-red shift) with the increase in temperature. This is also known as an "S-shaped" emission shift. The thermal activation energy for the exciton with increasing temperature in the ZnO nanorods is found to be about 26.6 meV; the values of Varshni's empirical equation fitting parameters are = $5{\times}10^{-4}eV/K$, ${\beta}=350K$, and $E_g(0)=3.364eV$.

• 한국자기학회지
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• 제9권6호
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• pp.271-277
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• 1999

M ssbauer 분광법을 이용하여 비정질합금 Fe83B9Nb7Cu1의 자기적 성질을 연구하였다. 개선된 Vincze의 방법을 적용하여 각 온도에서 초미세자기장, 이성질체 이동치, 그리고 quadrupole line broadening의 분포함수들을 얻었고 큐리온도는 393K, Hhf(0)는 231kOe로 산출되었다. 환산된 평균 초미세 자기장(reduced average hyperfine field)의 온도 변화는 S=1 자기화 곡선에 비해 급히 감소하는 양상을 보였고 이를 설명하기 위해 Handrich의 분자장 이론에서 교환 상호 작용의 척도인 에 =0.75-0.64(T/Tc)+0.47(T/Tc)2의 온도 의존성을 도입하였다. 평균 초미세 자기장(Hhf(T))은 저온에서 스핀파 여기에 의한 공식 Hhf(T)=Hhf(0)[1-0.44(T/Tc)3/2-0.28(T/Tc)5/2- ]으로 분석하였고, 큐리온도 부근에서는 1.00[1-T/Tc]0.39의 관계를 갖는 것으로 나타났다. 초미세 자기장 분포곡선의 선폭은 13K에서 102kOe (3.29 mm/s)였으며, 오도가 증가함에 따라 감소했다. 큐리온도 이상에서 평균 quadrupole splitting값은 0.43 mm/s였으며 quadrupole 이동치 분포에 의한 선폭 증가는 13K에서 0.1 mm/s, 320K에서는 0.072 mm/s 정도로 초미세 자기장 분포나 quadrupole line broadening에 의한 선폭 증가보다 작았다. 이성질체 이동치의 온도 변화에 Debye 모형을 적용하여 Debye 온도를 D=424K로 산출하였다.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.264-268
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• 2005

A 2.2-inch QCIF+(176${\times}$RGB${\times}$220) TFT-LCD with integrated row driver was developed using a standard amorphous silicon TFT technology. At low temperature, the integrated row driver operation is dramatically effected by the electron drift mobility reduction(■50 %) and the threshold voltage shift (■1V) of the a-Si TFT. We studied the dependency of circuit design and found that higher on-current circuit is important to guarantee good operation in wide temperature range.

• Tribology and Lubricants
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• 제34권1호
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• pp.1-8
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• 2018

This paper presents the analysis of friction master curves for a sliding elastomer on rough granite. The hysteresis friction is calculated using an analytical model that considers the energy spent during the local deformation of the rubber due to surface asperities. The adhesion friction is also considered for dry friction prediction. The viscoelastic modulus of the rubber compound and the large-strain effective modulus are obtained from dynamic mechanical analysis (DMA). We accurately demonstrate the large strain of rubber that contacts with road substrate using the GW theory. We found that the rubber block deforms approximately to 40% strain. In addition, the viscoelastic master curve considering nonlinearity (at 40% strain) is derived based on the above finding. As viscoelasticity strongly depends on temperature, it can be assumed that the influence of velocity on friction is connected to the viscoelastic shift factors gained from DMA using the time-temperature superposition. In this study, we apply these shift factors to measure friction on dry granite over a velocity range for various temperatures. The measurements are compared to simulated hysteresis and adhesion friction using the Kluppel friction theory. Although friction results in the low-speed band match well with the simulation results, there are differences in the predicted and experimental results as the velocity increases. Thus, additional research is required for a more precise explanation of the viscoelastic material properties for better prediction of rubber friction characteristics.