• Journal of information and communication convergence engineering
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• v.9 no.2
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• pp.217-219
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• 2011

As silicon devices shrink and their density increases, the low dielectric constant materials instead of $SiO_2$ film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at $300{\sim}500^{\circ}C$ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant using by the structure of the metal/SiOC film/p-Si, chemical shift, thickness, refractive index and hardness. The trend of reflective index was inverse proportioned the thickness, but the dielectric constant was proportioned it. The dielectric constant decreased with decreasing the thickness and the increment of the refractive index.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.144-147
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• 2003

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.

• Elastomers and Composites
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• v.52 no.3
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• pp.180-186
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• 2017

In this work, the effect of low-temperature dehydration of a poly(styrene-co-styrenesulfonic acid) (PSSA) membrane was investigated by differential scanning calorimetry, fourier transform infrared spectroscopy (FT-IR), electron magnetic resonancespectroscopy (EMR), and $^1H$- and $^{13}C$ solid-state nuclear magnetic resonance spectroscopy. These analyses were performed at room temperature for powdered PSSA specimens with and without dehydration and the following key observations were made. First, FT-IR analysis showed that low-temperature dehydration not only transformed the [${SO_3}^-{\cdots}H^+$] ionic pair in the non-hydrated PSSA to an $SO_3H$ group, but also induced the formation of -C=C- double bonds in the dehydrated PSSA. Second, the ${-SO_3}^{\bullet}$ radical was unambiguously identified by EMR spectroscopy. Third, H-abstraction was detected by $^1H$ magic-angle spinning spectroscopy. Finally, an unexpected color shift from white for the non-hydrated PSSA to a yellowish brown for the dehydrated sample was observed. In order to explain these experimental results, it was proposed that the formation of the intermediate hydrogen ($H^{\bullet}$) or hydroxyl radical ($HO^{\bullet}$) species was initiated by the dehydration process. The sespecies attacked the $SO_3H$ group and the tertiary proton at the ${\alpha}-carbon$, resulting in the formation of $-SO^{\bullet}$ radicals and -C=C- double bonds, which correlated with the color shift in the dehydrated PSSA sample. The semechanisms are useful for understanding the simultaneous loss of an aromatic ring and -SO- groups in the PSSA fuel cell membrane.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.21-21
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• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• Journal of Environmental Science International
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• v.5 no.6
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• pp.749-755
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• 1996

In order to grasp a characterization of low boiling point chlorinated organic compounds, this study which were carried out at the 8 stations for precipitation samples in the Pusan area during the period from February to September 1995. As a result, low boiling chlorinated organic compounds were estimated that it was dissolved by a portion of precipitation, and it be able to shift at the surface of the each. Concentration of low boiling point chlorinated organic compounds in precipitation are increased with increase of temperature, and estimated that air pollution compounds of as a rule in atmosphere.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.9 s.339
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• pp.1-10
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• 2005

In this paper, we proposed predistortion algerian that can compensate temperature distortion by digital. Predistortion algorithm produces compensation value of distortion by temperature as well as system nonlinear distortion by input level, and warps beforehand signal of baseband. To prove excellency of such algorithm we applied predistortion algorithm to Saleh's high power amplifier model, and did computer simulation. As a result, P1dB increased about 0.5 dBm phase shift reduced about $0.8^{o}$ than existent the A&P PD, and predistiortion algorithm to apply temperature compensation techniques improved P1dB about 2dBm and stabilized phase shift by about $0.1^{o}$ low. When approved UMTS's sample signal to this amplifier, IMD3 of amplifier decreased 10dBm than is no temperature compensation techniques, and reduced 19dBm than signal that is no distortion.

• Korean Journal of Metals and Materials
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• v.49 no.10
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• pp.818-822
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• 2011

ZnO nanorods were grown on Au-coated Si substrates by vapor phase transport (VPT) at the growth temperature of $600^{\circ}C$ using a mixture of zinc oxide and graphite powders as source material. Au thin films with the thickness of 5 nm were deposited by ion sputtering. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the ZnO nanorods. Five peaks at 3.363, 3.327, 3.296, 3.228, and 3.143 eV, corresponding to the free exciton (FX), neutral donor bound exciton ($D^{\circ}X$), first order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, and FX-3LO emissions, were obtained at low-temperature (10 K). The intensity of these peaks decreased and their position was red shifted with the increase in the temperature. The FX emission peak energy of the ZnO nanorods exhibited an anomalous behavior (red-blue-red shift) with the increase in temperature. This is also known as an "S-shaped" emission shift. The thermal activation energy for the exciton with increasing temperature in the ZnO nanorods is found to be about 26.6 meV; the values of Varshni's empirical equation fitting parameters are = $5{\times}10^{-4}eV/K$, ${\beta}=350K$, and $E_g(0)=3.364eV$.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.271-277
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• 1999

Amorphous $Fe_{83}B_9Nb_7Cu_1$ alloy has been studied by M$\"{o}$ssbauer spectroscopy. Revised Vincze method was used and distributions of hyperfine field, isomer shift, and quadrupole line broadening of the sample at various temperatures have been evaluated and Curie temperature and $H_{hf}\;(0)$ were calculated to be 393 K and 231 kOe, respectively. Temperature variation of reduced average hyperfine field shows a flattered curvein comparison with the Brillouin curve for S=1. This behavior can be explained on the basis of Handrich molecular field model, in which the parameter Δ, which is a measure of fluctuation in exchange interactions, is assumed to have the temperature dependence ${Delta}=0.75-0.64{\tau}+0.47{\tau}^2$ where $\tau$ is $T/T_C$. At low temperature, the average hyperfine field can be fitted to $H_{hf}\;(T)=H_{hf}\;(0)\;[1-0.44\;(T/T_C)^{3/2}-0.28(T/T_C)^{5/2}-… ]$, which indicates the presence long wave length spin wave excitations. At temperature near TC, reduced average hyperfine field varies as $1.00\;[1-T/T_C]^{0.39}$. It is also found that half-width of the hyperfine field distribution was 102 kOe (3.29 mm/s) at 13 K and decreased monotonically as temperature increased. Above the Curie temperature, an average quadrupole splitting value of 0.43 mm/s was found. Average line broadening due to quadrupole splitting distribution was 0.31 mm/s at 13 K and decreases monotonically to 0.23 mm/s at 320 K, whereas that due to the isomer shift distribution is 0.1 mm/s at 13 K and 0.072 mm/s at 320 K, which is much smaller than that of both hyperfine field and quadrupole splitting. The temperature dependence of the isomer shift can be fitted within the harmonic approximation to a Deybe model with a Debye temperature ${Theta}_D=424{\pm}5K$.TEX>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.264-268
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• 2005

A 2.2-inch QCIF+(176${\times}$RGB${\times}$220) TFT-LCD with integrated row driver was developed using a standard amorphous silicon TFT technology. At low temperature, the integrated row driver operation is dramatically effected by the electron drift mobility reduction(■50 %) and the threshold voltage shift (■1V) of the a-Si TFT. We studied the dependency of circuit design and found that higher on-current circuit is important to guarantee good operation in wide temperature range.

• Tribology and Lubricants
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• v.34 no.1
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• pp.1-8
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• 2018

This paper presents the analysis of friction master curves for a sliding elastomer on rough granite. The hysteresis friction is calculated using an analytical model that considers the energy spent during the local deformation of the rubber due to surface asperities. The adhesion friction is also considered for dry friction prediction. The viscoelastic modulus of the rubber compound and the large-strain effective modulus are obtained from dynamic mechanical analysis (DMA). We accurately demonstrate the large strain of rubber that contacts with road substrate using the GW theory. We found that the rubber block deforms approximately to 40% strain. In addition, the viscoelastic master curve considering nonlinearity (at 40% strain) is derived based on the above finding. As viscoelasticity strongly depends on temperature, it can be assumed that the influence of velocity on friction is connected to the viscoelastic shift factors gained from DMA using the time-temperature superposition. In this study, we apply these shift factors to measure friction on dry granite over a velocity range for various temperatures. The measurements are compared to simulated hysteresis and adhesion friction using the Kluppel friction theory. Although friction results in the low-speed band match well with the simulation results, there are differences in the predicted and experimental results as the velocity increases. Thus, additional research is required for a more precise explanation of the viscoelastic material properties for better prediction of rubber friction characteristics.