• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.29-37
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• 2021

A 7 nm technology node using extreme ultraviolet lithography with a wavelength of 13.5 nm has been recently developed and applied to the semiconductor manufacturing process. Furthermore, the development of sub-3 nm technology nodes continues to be required. In this study, design factors of an electrostatic deflector for an ultra-miniaturized microcolumn system that can realize an electron wavelength of below 1.23 nm with an acceleration voltage of above 1 eV were investigated using a three-dimensional simulator. Particularly, the optimal design of the electrostatic octupole floating deflector was derived by optimizing the design elements and improving the driving method of the 1 keV low energy ultra-miniaturized microcolumn deflector. As a result, the entire wide field of view greater than 330 ㎛ at a working distance of 4 mm was realized with an ultra-high-resolution electron beam spot smaller than 10 nm. The results of this study are expected to be a basis technology for realizing a wafer-scale multi-array microcolumn system, which is expected to innovatively improve the throughput per unit time, which is the biggest drawback of electron beam lithography.

• Journal of radiological science and technology
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• v.33 no.1
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• pp.31-36
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• 2010

Low energy high resolution (LEHR) collimator is the most widely used collimator in SPECT imaging. LEHR has an advantage in terms of image resolution but has a difficulty in acquiring high sensitivity due to the narrow hole size and long septa height. Throughput in SPECT can be improved by increasing counts per second with the use of high sensitivity collimators. The purpose of this study is to develop a system model in iterative image reconstruction to recover the resolution degradation caused by high sensitivity collimators with bigger hole size. We used fan-beam model instead of parallel-beam model for calculation of detection probabilities to accurately model the high sensitivity collimator with wider holes. In addition the weight factors were calculated and applied onto the probabilities as a function of incident angle of incoming photons and distance from source to the collimator surface. The proposed system model resulted in the equivalent performance with the same counts (i.e. in shortened acquisition time) and improved image quality in the same acquisition time. The proposed method can be effectively applied for resolution improvement of pixel collimator of next generation solid state detectors.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.335-335
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• 2011

Instability of a thin film attached to a compliant substrate often leads to emergence of exquisite wrinkle patterns with length scales that depend on the system geometry and applied stresses. However, the patterns that are created using the current techniques in polymer surface engineering, generally have low aspect ratio of undulation amplitude to wavelength, thus, limiting their application. Here, we present a novel and effective method that enables us to create wrinkles with a desired wavelength and high aspect ratio of amplitude over wavelength as large as to 2.5:1. First, we create buckle patterns with high aspect ratio of amplitude to wavelength by deposition of an amorphous carbon film on a surface of a soft polymer poly(dimethylsiloxane) (PDMS). Amorphous carbon films are used as a protective layer in structural systems and biomedical components, due to their low friction coefficient, strong wear resistance against, and high elastic modulus and hardness. The deposited carbon layer is generally under high residual compressive stresses (~1 GPa), making it susceptible to buckle delamination on a hard substrate (e.g. silicon or glass) and to wrinkle on a flexible or soft substrate. Then, we employ glancing angle deposition (GLAD) for deposition of a high aspect ratio patterns with amorphous carbon coating on a PDMS surface. Using this method, pattern amplitudes of several nm to submicron size can be achieved by varying the carbon deposition time, allowing us to harness patterned polymers substrates for variety of application. Specifically, we demonstrate a potential application of the high aspect wrinkles for changing the surface structures with low surface energy materials of amorphous carbon coatings, increasing the water wettability.

• Radiation Oncology Journal
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• v.7 no.1
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• pp.85-92
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• 1989

Dosimerty based on electron spin resonance (ESR) analysis of radiation induced free radicals in amino acids is relevant to biological dosimetry applications. Alanine detectors are without walls and are tissue equivalent. Therefore, alanine ESR dosimetry looks promising for use in the therapy level. The dose range of the alanine/ESR dosimetry system can be extended down to 1 Gy. In water phantom the absorbed dose of electrons generated by a medical linear accelerator of different initial energies $(6\~21MeV)$ and therapeutic dose levels (1~60 Gy) was measured. Furthermore, depth dose measurements carried out with alanine dosimeters were compared with ionization chamber measurements. As the results, the measured absorbed doses for shallow depth of initial electron energies above 15 MeV were higher by$2\~5\%$ than those calculated by nominal energy $C_E$ factors. This seems to be caused by low energy scattered beams generated from the scattering foil and electron cones of beam projecting device in medical linear accelerator.

• Journal of radiological science and technology
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• v.41 no.6
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• pp.587-594
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• 2018

The purpose of this study was to develop the indirect dosimetry by calculation (IDC) method for diagnostic X-ray equipment. The experiments were performed with inverter type X-ray tubes: Toshiba (E7252X, Japan) and Varian (RAD-14, USA). For the development method, we first applied the standard quality of X-ray beam shown in the TRS457 document, and second, to produce the constants of trendline for the IDC, the total filtration on X-ray beam was subdivided. Third, in order to increase the precision, the energy region was divided into the high energy region and the low energy region and developed by the IDC. In order to verify the IDC, mean dose (mR) values were measured for three Toshiba X-ray tubes and three Varian X-ray tubes at clinical medical institutions and then compared with the IDC on the 2013. As a result, compared with the previous study, the accuracy of the IDC of this study were improved by 2.71% and 9.91% in Toshiba and Varian X-ray tubes, respectively.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.79-90
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• 2007

Prototype of $800{\ell}$ vacuum web coater (Vic Mama) consisting of ion source with low energy less than 250 eV for high speed surface modification and 4 magnetron sputter cathodes was designed and constructed. Its performance was evaluated through fabricating the adhesiveless flexible copper clad laminate (FCCL). Pumping speed was monitored in both upper noncoating zone pumped down by 2 turbo pumps with 2000 l/sec pumping speed and lower surface modification and sputter zone vacuumed by turbo pumps with 450 1/sec and 1300 1/sec pumping speed respectively. Ion current density, plasma density, and uniformity of ion beam current were measured using Faraday cup and the distribution of magnetic field and erosion efficiency of sputter target were also investigated. With the irradiation of ion beams on polyimide (Kapton-E, $38{\mu}m$) at different fluences, the change of wetting angle of the deionized water to polyimide surface and those of surface chemical bonding were analyzed by wetting anglometer and x-ray photoelectron spectroscopy. After investigating the deposition rate of Ni-Cr tie layer and Cu layer was investigated with the variations of roll speed and input power to sputter cathode. FCCL fabricated by sputter and electrodeposition method and characterized in terms of the peel strength, thermal and chemical stability.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.479-485
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• 2022

At the Korea Institute of Radiological and Medical Sciences, physical human phantoms were developed to evaluate various radiation protection quantities, based on the mesh-type reference computational phantoms of the International Commission on Radiological Protection. The physical human phantoms were fabricated such that a radiophotoluminescent glass dosimeter (RPLGD) with a Tin filter, namely GD-352M, could be inserted into them. A Tin filter is used to eliminate the overestimated signals in low-energy photons below 100 keV. The measurement uncertainty of the RPLGD reader system based on GD-352M should be analyzed for obtaining reliable protection quantities before using it for practical applications. Generally, the measurement uncertainty of RPLGD systems without Tin filters is analyzed for quality assurance of radiotherapy units using a high-energy photon beam. However, in this study, the measurement uncertainty of GD-352M was analyzed for evaluating the protection quantities. The measurement uncertainty factors in the RPLGD include the reference irradiation, regression curve, reproducibility, uniformity, energy dependence, and angular dependence, as described by the International Organization for Standardization (ISO). These factors were calculated using the Guide to the Expression of Uncertainty in Measurement method, applying ISO/ASTM standards 51261(2013), 51707(2015), and SS-ISO 22127(2019). The measurement uncertainties of the RPLGD reader system with a coverage factor of k = 2 were calculated to be 9.26% from 0.005 to 1 Gy and 8.16% from 1 to 10 Gy. A blind test was conducted to validate the RPLGD reader system, which demonstrated that the readout doses included blind doses of 0.1, 1, 2, and 5 Gy. Overall, the E_n values were considered satisfactory.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.224-227
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• 2009

Nanofabrication is an essential process throughout industry. Technologies that produce general nanofabrication, such as e-beam lithography, dip-pen lithography, DUV lithography, immersion lithography, and laser interference lithography, have drawbacks including complicated processes, low throughput, and high costs, whereas nano-transfer printing (nTP) is inexpensive, simple, and can produce patterns on non-plane substrates and multilayer structures. In general nTP, the coherency of gold-deposited stamps is strengthened by using SAM treatment on substrates, so the gold patterns are transferred from stamps to substrates. However, it is hard to apply to transfer other metallic materials, and the existing nTP process requires a complicated surface treatment. Therefore, it is necessary to simplify the nTP technology to obtain an easy and simple method for fabricating metal patterns. In this paper, asnTP process with poly vinyl alcohol (PVA) mold was proposed without any chemical treatment. At first, a PVA mold was duplicated from the master mold. Then, a Mo layer, with a thickness of 20 nm, was deposited on the PVA mold. The Mo deposited PVA mold was put on the Si wafer substrate, and nTP process progressed. After the nTP process, the PVA mold was removed using DI water, and transferred Mo nano patterns were characterized by a Scanning electron micrograph (SEM) and Energy Dispersive spectroscopy (EDS).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.