• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.485-486
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• 2012

• 한국광학회지
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• 제16권3호
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• pp.235-238
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• 2005

생산성 향상을 위하여 정렬된 마이크로칼럼을 이용하여 멀티-전자빔 리소그라피 장치를 개발하였다. 마이크로칼럼은 매우 작은 크기를 가지고 있어 병렬구조로 정렬하여 작동시킬 수 있다. Single Column Module(SCM) 구조의 멀티 전자빔 리소그라피 시스템과 전자칼럼을 제작하여 250 eV에서 300 eV 에너지 범위에서의 저에너지 마이크로칼럼 리소그라피를 성공적으로 수행하였다. 전자방출원에서 방출되는 전자빔의 총 전류가 $0.5\;{\mu}A$일 때, 샘플에서의 전류는 >1 nA으로 측정되었으며 리소그라피 패텅닝에서 사용된 working distance은 $\~1\;mm$였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.507-510
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• 2004

Oblique ion-induced secondary electron emission coefficient(${\gamma}$) with low energy ..and work function ${\phi}_{\omega}$(${\theta}$ = 0 and ${\theta}$ = 20) of the MgO thin film in AC-PDPs has been measured by ${\gamma}$-FIB system. The MgO thin film has been deposited from sintered material under electron beam evaporation method. The energy of $He^+$ ions used has been ranged from 50eV to 150eV. Oblique ion beam has been chosen to be 10 degree, 20 degree and 30 degree. It is found that the higher secondary electron emission coefficient(${\gamma}$) has been achieved by the higher oblique ion beam up to inclination angle of 30 degree than the perpendicular incident ion beam.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.138.1-138.1
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• 2013

We present the low temperature (${\leq}1,000^{\circ}C$) vacuum sublimation behavior of an e-beam evaporative deposited on a SiC film and a method to reduce the vacuum sublimation through an ion beam process. The density of the SiC film deposited using the e-beam evaporation method was ~60% of the density of the bulk source material. We found that the sublimation became appreciable above ${\sim}750^{\circ}C$ under $1.5{\times}10^{-5}$ torr pressure and the sublimation rate increased with an increase in temperature, reaching ~70 nm/h at $950^{\circ}C$ when the coated sample was heated for 5 h. When the film was irradiated with 70 keV N+ ions prior to heating, the sublimation rate decreased to ~23 nm/h at a fluence of $1{\times}10^{17}\;ions/cm^2$. However, a further increase in fluence beyond this value or an extended heating period did not change (decrease or increase) the sublimation rate any further.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.370-370
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• 2007

The liquid crystal (LC) aligning capabilities treated on the Organic overcoat thin film surfaces by ion beam irradiation and rubbing method was successfully studied for the first time. The Organic overcoat layer was coated by spin-coating. In order to characterize the LC alignment, the microscope, pretilt angle, thermal stress, and atomic force microscopy (AFM) image was used. The good LC aligning capabilities treated on the Organic overcoat thin film surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1200 eV can be achieved. But, the alignment of defect of NLC on the Organicovercoat surface at low energy density of 600 eV was measured. The pretilt angle of NLC on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min at energy density of 1800eV was measured about 1.13 degree. But, low pretilt angles of NLC on the Organic overcoat thin film surface with ion beam exposure at energy density of 600, 1200, 2400, and 3000 eV was measured. Also, the pretilt angle of NLC on the rubbed Organic overcoat thin film surfaces was measured about 0.04 degrees. Finally, the good thermal stability of LC alignment on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be measured.

• 방사선산업학회지
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• 제5권1호
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• pp.41-46
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• 2011

Polyacrylonitrile (PAN) fibers are the most widely used precursor of the materials for carbon fibers. The conventional process of carbon fibers from PAN precursor fiber includes two step; stabilization at low temperature and carbonization at high temperature. Compared to thermal stabilization, the stabilization process by electron beam (E-beam) irradiation is a advanced and brief method. However, a stabilization by E-beam irradiation was required a high dose (over 5,000 kGy) and spend over 1.5 hr (1.14 MeV, 1 mA). In the present work the main goal is exploring a quick stabilization process by cotrolling E-beam currents. The effect of various E-beam currents on stabilization of PAN precursor fiber was studied by gel fraction test, thermo gravimertic analysis (TGA), differential scanning calorimetry (DSC), tensile strength, and scanning electron microscopy (SEM) images.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.378.1-378.1
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• 2016

나노바이오연구분야에서 ToF-SIMS를 이용하여 lipid와 metabolite같은 저 분자의 생체물질을 측정하는데 널리 이용되어 왔다. 최근에는 고 분자량의 생체물질을 측정하기 위해서 C60, water cluster, argon cluster등의 다양한 종류의 클러스터 이온빔들이 개발되어 왔다. [1,2] 하지만 tissue샘플을 클러스터 이온빔을 이용하여 분석한 결과에서도 m/z 1500이상의 고분자를 측정한 결과는 거의 없다. 바이오샘플의 charging을 상쇄하기위해 low energy electron beam (~20 eV)을 사용하는데, low energy electron beam이 샘플에 damage를 주기 때문이다. [3] 본 연구에서는 electron fluence (electrons/cm2)가 증가함에 따라 PC(16:0/18:1(9Z)와 Ganglioside GM1의 intensity가 감소함을 알았고, low energy electron beam에 의해 생체 물질이 damage를 받을 수 있음을 확인하였다. 따라서 tissue 샘플을 SUS기판에 샘플링하고 Ar-GCIB를 이용하면 charging없이 tissue imaging을 성공적으로 수행할 수 있고, m/z 2000이상의 고 분자량의 생체물질을 측정할 수 있음을 확인하였다.

• 한국산학기술학회논문지
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• 제8권4호
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• pp.743-747
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• 2007

반도체 소자 제작에 있어서 회로의 pattern 형성에 이용하는 차세대 lithography 공정 기술을 위해서 전자빔 lithography 공정 기술 연구가 진행되고 있다. 본 연구에서는 Gauss 해석법과 Monte Carlo의 수치해석법을 사용하여 두께 100 nm의 PMMA (poly-methyl-methacrylate) resist에 전자 $1{\times}10^4$를 입사시키고, 입사 전자빔 에너지에 따른 PMMA 내에서의 투과 깊이를 비교하였다. 전자빔 에너지의 크기는 100eV, 300eV, 500eV, 700eV, 그리고 1000eV에 대하여 simulation을 실시하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권12호
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• pp.785-790
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• 1999

This research has been carried out to develop a low-energy large-aperture pulsed electron beam generator (LELA), 200keV 1A, for industrial applications. One of the most important feature of this electron beam generator is large electron beam cross section of $190cm^2$. Low energy electron beam generators have been used for water cleaning, flue gas cleaning, and pasteurization, etc. In these applications the cross sectionof the e-beam is related to reaction efficiency. Another important feature of this LELA EB generator is easy maintenance because of its simple structure and relatively low vacuum operation compared to the conventional EB generators. The conventional EB generators need to be scanned because the small cross section thermal electron emitters are used in the conventional EB generators which have small EB cross section. In this research, we use the secondary electrons generated by ion bombardment on the HV cathode surface as a electron source. Therefore we can make any shape of EB cross section without scanning.

• Bulletin of the Korean Chemical Society
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• 제11권4호
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• pp.290-296
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• 1990

Ion-surface collision studies at low kinetic energies (1-100 eV) provide a unique opportunity for investigating reactions and collision dynamics at surfaces. A special ion optics system for generating an energy- and mass-selected ion beam of this energy is designed and constructed. An ultrahigh vacuum (UHV) reaction chamber, in which the ions generated from the beamline collide with a solid surface, is equipped with Auger electron spectroscopy (AES) and thermal desorption spectrometry (TDS) as in-situ surface analytical tools. The resulting beam from the system has the following characteristics : ion current of 5-50 nA, energy spread < 2eV, current stability within ${\pm}5%,$ and unit mass resolution below 20 amu. The performance of the instrument is illustrated with data representing the implantation behavior of $Ar^+$ into a graphite (0001) surface.