• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.108-112
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• 2002

We investigated the secondary electron emission characteristics of MgO layer used as the protecting material in a.c. plasma display panel(a.c.-PDPs) using a pulsed ion beam technique, where the surface charging can be effectively suppressed during the measurement. The measurement of the secondary electron emission coefficients ($\gamma$) on the surface of $SiO_2$ was carried out and then, it was found that the yields were dependent on incident ion energies. In addition, it was clearly demonstrated that the sputtering on MgO surface leads to lower yields, which suggests that the surface plays a key role on the operating conditions, such as life time, fast response, and etc.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.96-103
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• 1994

The GaAs epilayer was grown at low temperature (LT. 250.deg. C) by molecular beam epitaxy. The properties of the LTT GaAs, before and after Rapid Thermal Annealing(RTA), were analyzed by Reflection of High Energy Electron Diffraction (RHEED), Double Crystal X-ray(DCX), Raman spectroscopy, PL and Photo-Induced Current Transient Spectroscopy (PICTS). The LT GaAs before RTA, was analyzed by RHEED and DCX, with a result of an improved surface morphology under a relatively As-rich(As/Ga ratio :28) condition, and of an increased lattics parameter of 1.1 1.7% in comparison with a GaAs substrate. However DCX and Raman spectroscopy revealed that the expanded lattics parameter and the crystallinity of LT GaAs could be recovered after RTA. On the other hand, PL spectra indicated that LT GaAs after RTA showed low optical sensitivity unlike High Temperature(HT) GaAs, and that its surface morphology and crystallinity were corresponded with those of HT GaAs. Finally PICTS spectra proved the fact that low sensitivity of LT GaAs was due to the deep level defects (Ec-0.85eV) which were strogly formed by raising RTA temperature to 750.deg. C.

• The Journal of Korean Society for Radiation Therapy
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• v.8 no.1
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• pp.41-54
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• 1996

The secondary electrons developed by interaction between primary beam and a tray mounted for blocks in Megavoltage irradiation result in excess soft radiation dose to the surface layer. To reduce this electron contamination, electron filters have been used to be attached under a tray. Various filters with Cu and Al plates in six different thickness and Cu/Al combined plates in 3 different thickness were tested to measure the reduction rate of secondary electron contamination to the surface layer. The measurement to find optimal filter was performed on 6MV linear accelerator in $10 cm{\times}10 cm$ field size and fixed 78.5cm source to measurement points distance from surface to maximum build up point in 2mm intervals. The result was analyzed as the ratio of measured doses with using filters, to standard doses of measured open beam. The result of this study was fellowing : 1. The contaminated low energy radiation were mainly produced by blocking tray. 2. The surface absorbed dose was slowly increased by increasing irradiation field size but rapidly increased at field size above $15cm{\times}15cm$. 3. Al plate upto 2.5mm thickness used as a filter was found to be inadequate due to the failure of reduction of the surface absorbed dose below doses of the under surface upto the maximal build up. Cu 0.5mm plate and Cu 0.28mm/A1 1.5mm compound plate were found to be optimal filters. 4. By using these 2 filters, the absorbed dose to the surface were effectively reduced $5.5\%$ in field size $4cm{\times}4cm,\;11.3\%$ in field size $10cm{\times}10cm,\;22.3\%$ in field size $25cm{\times}25cm$. 5. In field size $10cm{\times}10cm$, the absorbed dose to the surface of irradiation was reduced by setting TSD 20cm at least,. but effective and enough dose reduction could be achieved by setting TSD 30cm as 2 optimal filters used. 6. More surface dose absorbed at TSD less than 7.4cm with a tray and filters together indicated that soft radiation was also developed by filters. 7. The variation of PDD by the different size of irradiation field was minimal as 2 optimal filters used. There was also not different in variation of PDD according to using any of two different filters. 8. PDD was not effected either by various TSD or by using the different filter among two.

• Nuclear Engineering and Technology
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• v.14 no.2
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• pp.70-77
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• 1982

The crosslinking reaction and oxidative stability of low-density polyethylene were studied in the presence of trifunctional monomers and antioxidants with electron beam. The trifunctional monomers used in this study are Trimethylolpropane triacrylate(TMPTA), Trimethylolpropane trimethacrylate(TMPTM) and Triallyl cyanurate(TAC). And the antioxidants are Irganox 1010 (Pentaerythritoltetrakis[3-(3,5-di-t-butyl-4-hydroxyphenyl)-propionatel]), Santo-nox R(4,4'-Thio-bis(3-methyl-6-t-butylphenol)), Nocrac D(N-phenyl-$\beta$-naphthylamine) and Bis-phenol A(4,4'-Isopropylidene bisphenol). Among the monomers, TMPTA is the best crosslinking agent and prvides polyethylene with oxidative stability. Among the antioxidants, Nocrac D is the best antioxidant for polyethylene.

• Journal of the Korean Society of Food Science and Nutrition
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• v.42 no.11
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• pp.1857-1863
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• 2013

Bulgogi sauces containing electron beam-irradiated garlic powder (1%, 3%, and 5%) were used to compare their irradiation status before and after pasteurization ($85^{\circ}C$, 30 min), using a thermoluminescence (TL) analysis by two different laboratories. The sauces with non-irradiated ingredient only provided a background TL glow curve with a maximum peak after $300^{\circ}C$. However, the presence of irradiated ingredient (1 and 10 kGy) was evident through the typical TL glow curves in a temperature range of 150 to $250^{\circ}C$. The concentration of irradiated ingredients showed a greater impact on identification characteristics than their radiation doses. TL ratios ($TL_1/TL_2$) were not able to confirm the results showing evidence of irradiation through the TL glow curve shapes. Pasteurization showed a negligible effect on the key identification parameters and did not change the shape or temperature range of radiation-specific TL glow peak, but reduced TL glow curve intensity. TL glow curve shape with the maximum peak in a temperature range of $150{\sim}250^{\circ}C$ was the most useful characteristic providing information required for confirming the irradiation status.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.5
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• pp.235-243
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• 2008

Ni-C composite films were prepared using a combination of microwave plasma CVD and ion beam sputtering deposition working in a codeposition way. The structure of these films was characterized by energy-dispersive X-ray diffraction (EDXRD), transmission electron microscopy (TEM) and Raman spectroscopy. It was found that a nickel carbide phase, $Ni_3C$ (hcp), formed as very fine crystallites over a wide temperature range when Ni-C films were deposited at low $CH_4$ flow rates. The thermal stability of this nonequilibrium carbide $Ni_3C$ was also studied. As a result, the $Ni_3C$ carbide was found to decompose into nickel and graphite at around $400^{\circ}C$. With high $CH_4$ flow rates (> 0.2 sccm), the structure of the Ni-C films became amorphous. The formation behavior of the carbide and amorphous Ni-C phases are discussed in relation to the electrical resistivity of the films.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.175-175
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• 1999

Circumventing problems lying in the conventional lithographic techniques, we devised a new method for the fabrication of nanometer scale metal wires inspired by the unique characteristics of carbon nanotubes (CNTs). Since carbon nanotubes could act as masks when CNT-coated thin Au/Ti layer on a SiO2 surface was physically etched by low energy argon ion bombardment 9ion milling), Au/Ti nano-wires were successfully formed just below the CNTs exactly duplicating their lateral shapes. Cross-sectional analysis by transmission electron microscopy revealed that the edge of the metal wire was very sharply developed indicating the great difference in the milling rates between the CNTs and the metal layer as well as the good directionality of the ion milling. We could easily find a few nanometer-wide Au/Ti wires among the wires of various width. After the formation of nano-wires, the CNTs could be pushed away from the metal nano-wire by atomic force microscopy, The lateral force for the removal of the CNTs are dependent upon the width and shape of the wires. Resistance of the metal nano-wires without the CNTs was also measured through the micro-contacts definted by electron beam lithography. since this CNT-based lithographic technique is, in principle, applicable to any kinds of materials, it can be very useful in exploring the fields of nano-science and technology, especially when it is combines with the CNT manipulation techniques.

• Journal of Welding and Joining
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• v.34 no.4
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• pp.1-8
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• 2016

Metal AM(Additive Manufacturing) has been steadily developed and that is classified into two method. PBF(Powder Bed Fusion) deposited in the bed by the laser or electron beam as a heat source of the powder material and DED(Directed Energy Deposition) deposited by varied heat source of powder and solid filler material. In the developed countries has been applying high productivity process of solid filler metal based DED method to the aerospace and defense sectors. The price of the powder material is quite expensive compared to the solid filler metal. A study on DED method that is based on a solid filler metal is increasing significantly although was low accuracy and degree of freedom.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.