• Advances in nano research
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• 제4권1호
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• pp.45-50
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• 2016

Data of Raman spectroscopy from graphene and few-layer graphene (FLG) irradiated by SEM electron beam in the range of energies 0.2 -30 keV are presented. The obvious effect of damaging the nanostructures by all used beam energies for specimens placed on insulator substrates ($SiO_2$) was revealed. At the same time, no signs of structural defects were observed in the cases when FLG have been arranged on metallic substrate. A new physical mechanism of under threshold energy defect production supposing possible formation of intensive electrical charged puddles on insulator substrate surface is suggested.

• 한국의학물리학회지:의학물리
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• 제5권1호
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• pp.87-99
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• 1994

목적 : 선형가속기 ML-15MDX의 전자선에너지 대한 출력선량계수가 Applicator크기에 따라 결정되도록 하며 각 Applicator에서 정방형조사면과 직사각형조사변에 대한 출력선량계수는 측정값으로 부터 다항식을 이용하여 결정되었다. 방법 : 실험에서, 출력선량의 측정은 전자선에너지 4, 6, 9, l2MEV대해 2$\times$2$cm^2$에서 20$\times$20$cm^2$까지 이루어졌다. 출력선량계수는 각 아프리케이터의 조사면중심선속의 최대선량에 대한 임의 조사면의 최대선량의 비로 얻어졌고 각 아프리케이터의 출력선량계수는 기준 아프리케이터(10$\times$10$cm^2$)와 비교되었다. 전자선조사면의 차폐는 모든 실험에너지 영역에서 균등하게 10mm 두께의 Lipowitz(밀도 9.4g/$cm^2$)를 사용하였으며, 조사면크기 및 모양 결정이 용이하도록 고안하여 사용되었다. 임의의 전자선조사면에 대한 출력선량계수는 조사면의 한변을 고정한 직사각형의 출력선량 계수를 이용한 1-Dimension방법에 의한 다항식으로 부터 구하였다. 결과 : 직사각형의 전자선조사면에 대한 출력선량계수는 4$\times$4$cm^2$에서 20$\times$20$cm^2$의 범위에서는 2%이내의 불확실성을 보였으며, 이들 보다 작은 직사각형조사면에서는 약 3%의 오차를 보였다. 결론 : 전자선에너지의 정사각형 및 직사각형조사변에 대한 출력선량계수가 실험자료를 이용한 다항식으로 부터 실제값에 매우 근사한 예상값을 얻을 수 있었다.

• Journal of Radiation Protection and Research
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• 제42권1호
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• pp.63-68
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• 2017

Background: The combined effect of the low energy electron (LEE) irradiation and $Cu^{2+}$ ion on DNA damage was investigated. Materials and Methods: Lyophilized pBR322 plasmid DNA films with various concentrations (1-15 mM) of $Cu^{2+}$ ion were independently irradiated by monochromatic LEEs with 5 eV. The types of DNA damage, single strand break (SSB) and double strand break (DSB), were separated and quantified by gel electrophoresis. Results and Discussion: Without electron irradiation, DNA damage was slightly increased with increasing Cu ion concentration via Fenton reaction. LEE-induced DNA damage, with no Cu ion, was only 6.6% via dissociative electron attachment (DEA) process. However, DNA damage was significantly increased through the combined effect of LEE-irradiation and Cu ion, except around 9 mM Cu ion. The possible pathways of DNA damage for each of these different cases were suggested. Conclusion: The combined effect of LEE-irradiation and Cu ion is likely to cause increasing dissociation after elevated transient negative ion state, resulting in the enhanced DNA damage. For the decrease of DNA damage at around 9-mM Cu ion, it is assumed to be related to the structural stabilization due to DNA inter- and intra-crosslinks via Cu ion.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년도 춘계 학술대회 개요집
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• pp.68-70
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• 2006

For the aluminum material of the thick-thickness more than 100mm Penetration depth Electron beam welding is effectively applicable with a characteristic of high energy intensity. But Al 6061 alloy has high crack sensitivity due to minor alloys, which are silicon, magnesium, copper etc. With a sample block of 135mm thickness EBW test was performed in vertical position. As tensile strength has $210{\sim}220N/mm^2$ with weld area broken. Bend test shows low ductility with fracture of partly specimens. Chemical contents of alloys show no difference between weld and base metal. Defect in middle weld area figures out typical hot crack due to low melting materials. Micro structure of weld area has some difference compare to HAZ and base metal. As a result of EBW test for Al 6061 alloy, it shows that weld defect could be occurred even though establishing of optimum weld parameter condition.

• Journal of Biosystems Engineering
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• 제38권2호
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• pp.87-94
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• 2013

Purpose: Pineapple is now the third most important tropical fruit in world production after banana and citrus. Phytosanitary irradiation is recognized as a promising alternative treatment to chemical fumigation. However, most of the phytosanitary irradiation studies have dealt with physiochemical properties and its efficacy. Accurate dose calculation is crucial for ensuring proper process control in phytosanitary irradiation. The objective of this study was to optimize phytosanitary irradiation treatment of pineapple in various radiation sources using Monte Carlo simulation. Methods: 3-D geometry and component densities of the pineapple, extracted from CT scan data, were entered into a radiation transport Monte Carlo code (MCNP5) to obtain simulated dose distribution. Radiation energy used for simulation were 2 MeV (low-energy) and 10 MeV (high-energy) for electron beams, 1.25 MeV for gamma-rays, and 5 MeV for X-rays. Results: For low-energy electron beam simulation, electrons penetrated up to 0.75 cm from the pineapple skin, which is good for controlling insect eggs laid just below the fruit surface. For high-energy electron beam simulation, electrons penetrated up to 4.5 cm and the irradiation area occupied 60.2% of the whole area at single-side irradiation and 90.6% at double-side irradiation. For a single-side only gamma- and X-ray source simulation, the entire pineapple was irradiated and dose uniformity ratios (Dmax/Dmin) were 2.23 and 2.19, respectively. Even though both sources had all greater penetrating capability, the X-ray treatment is safer and the gamma-ray treatment is more widely used due to their availability. Conclusions: These results are invaluable for optimizing phytosanitary irradiation treatment planning of pineapple.

• Radiation Oncology Journal
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• 제5권2호
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• pp.157-163
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• 1987

It is known that fixed source to skin distance (SSD) cannot be used when the treatment field is sloped or larger than the size of second collimator in electron beam irradiation and inverse square law using effective ssd should be adopted. Effective SSDs were measured in different field sizes in each 6, 9, 12, 15 and 18MeV electron energy by suing NELAC 1018D linear accelerator of Kosin Medical Center. We found important parmeters of effective SSD. 1. Minimum effective SSD was 58.8cm in small field size of $6\pm6cm$ and maximum effective SSD was 94.9cm in large field size of $25\pm25cm$, with 6MeV energy. It's difference was 36.1cm. The dose rate at measuring point was quite different even with a small difference of SSD in small field $(6\times6cm)$ and low energy (6 MeV). 2. Effective SSD increased with field size in same electron energy. 3. Effective SSDs gradually increased with the electron energies and reached maximum at 12 or 15 MeV electron energy and decreased again at 18MeV electron energy in each identical field size. And so the effective SSD should be measured in each energy and field size for practical radiotherapy.

• 한국지하수토양환경학회지:지하수토양환경
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• 제7권3호
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• pp.61-70
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• 2002

난분해성 유기오염물로 오염된 토양 복원을 위한 전자빔 직접조사 공정의 적용가능성을 평가하기 위하여 PAHs 와 PCBs로 오염시킨 토양에 대한 전자빔 조사실험을 수행하였다 전자빔 흡수선량 600kGy에서 PAHs의 제거율은 약 97% 이었고 PCBs는 800kGy에서 약 70%가 제거되었다. PAHs는 PCBs에 비해 낮은 흡수선량에서도 높은 제거율을 나타내었다. 오염물의 분해는 가속된 전자와 물의 반응으로 생성된 반응성 높은 중간생성물에 의한 산화/환원 반응보다는 고에너지 전자와 대상오염물의 직접적인 반응에 기인한다. 전자빔 조사에 의해 난분해성 오염물질로 오염된 토양을 효과적으로 제거할 수 있으나 이를 위해 높은 에너지를 요구하므로 비경제적인 공법이 될 수 있다. 따라서, 전자빔 직접조사 공정보다는 기존 토양복원 공법의 후처리 공정으로 개발하는 것이 경제적이고 실용화 가능할 것으로 판단된다.

• Corrosion Science and Technology
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• 제17권3호
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• pp.123-128
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• 2018

The fabrication of a controlled surface is of great interest because it can be applied to various engineering facilities due to the various properties of the surface, such as self-cleaning, anti-bio-fouling, anti-icing, anti-corrosion, and anti-sticking. Controlled surfaces with micro/nano structures were fabricated using an ion beam focused onto a polypropylene (PP) surface with a fluoridation process. We developed a facile method of fabricating hydrophobic surfaces through ion beam treatment with argon and oxygen ions. The fabrication of low surface energy materials can replace the current expensive and complex manufacturing process. The contact angles (CAs) of the sample surface were $106^{\circ}$ and $108^{\circ}$ degrees using argon and oxygen ions, respectively. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) spectroscopy were used to determine the chemical composition of the surface. The morphology change of the surfaces was observed by scanning electron microscopy (SEM). The change of the surface morphology using the ion beam was shown to be very effective and provide enhanced optical properties. It is therefore expected that the prepared surface with wear and corrosion resistance might have a considerable potential in large scale industrial applications.

• Journal of Radiation Protection and Research
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• 제40권2호
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• pp.87-91
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• 2015

We have employed X-ray photoelectron spectroscopy (XPS) technique to examine the combined effects of low-energy electron (LEE) irradiation and $Fe^{3+}$ ion on DNA damage. pBR322 plasmid DNA extracted from E. coli ER2420 was used for preparing DNA-$Fe^{3+}$ sample. The C1s XPS spectra were scanned for LEE-irradiated and LEE-unirradiated samples and then curve-fitted. For the samples with LEE irradiation only or with Fe ion only, no significant changes from pure DNA samples were observed - a single effect of either $Fe^{3+}$ ion or LEE irradiation did not cause a significant damage. However, when these two components were combined, the DNA damage was increased quite significantly, compared to the sum of DNA damages caused by $Fe^{3+}$ ion and by LEE irradiation independently. This observation is consistent with our previous results [Radiat. Res. 177, 775 (2012)] which was done using gel-electrophoresis technique. Partial interpretation of the observed spectrum peaks was also attempted.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.