• 제목/요약/키워드: Low Energy Electron-Beam

검색결과 141건 처리시간 0.021초

전자빔 조사가 ZnO 박막의 전기적 특성 변화에 미치는 영향 (Influence of Electron Beam Irradiation on the Electrical Properties of ZnO Thin Film Transistor)

  • 최준혁;조인환;김찬중;전병혁
    • 한국전기전자재료학회논문지
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    • 제30권1호
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    • pp.54-58
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    • 2017
  • The effect of low temperature ($250^{\circ}C$) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ${\sim}10^5$ and the $V_{TH}$ values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at $400^{\circ}C$ representing on/off ratio of ${\sim}10^2$ and S. S. value of 10.40 V/decade.

저에너지 고출력 이온빔을 이용한 polyvinylidene fluoride 표면의 초친수성화 (Superhydrophilic Surface Modification of Polyvinylidene Fluoride by Low Energy and High Flux ion Beam Irradiation)

  • 박종용;정연식;최원국
    • 한국재료학회지
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    • 제15권6호
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    • pp.382-387
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    • 2005
  • Polyvinylidene fluoride (PVDF) surface was irradiated and became superhydrophilic by low energy (180 eV) and high flux $(\~10^{15}/cm{\cdot}s)$ ion beam. As an ion source, a closed electron Hall drift thruster of $\phi=70mm$ outer channel size without grid was adopted. Ar, $O_2$ and $N_2O$ were used for source gases. When $N_2O^+$ and $O_2^+$ reactive gas ion beam were irradiated with the ion fluence of $5\times10^{15}/cm^2$, the wetting angle for deionized water was drastically dropped from $61^{\circ}\;to\;4^{\circ}\;and\;2^{\circ}$, respectively. Surface energy was also increased up to from 44 mN/m to 81 mN/m. Change of chemical component in PVDF surface was analyzed by x-ray photoelectron spectroscopy. Such a great increase of the surface energy was intimately related with the increase of hydrophilic group component in reactive ion irradiated PVDF surfaces. By using an atomic force microscopy, the root-mean-square of surface roughness of ion irradiated PVDF was not much altered compared to that of pristine PVDF.

고에너지 전자빔을 이용하여 저궤도 인공위성의 실리콘 태양센서의 내방사선 특성 연구 (A study on the radiation effect of silicon solar cells in a low Earth orbit satellite by using high energy electron beams)

  • 정성인;이재진;이흥호
    • 대한전자공학회논문지SD
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    • 제45권3호
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    • pp.1-5
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    • 2008
  • 본 논문은 고에너지 전자빔을 이용하여 저궤도 인공위성의 실리콘 태양센서의 내방사선 특성 변화를 분석하였다. 일반적으로 저궤도를 선회하는 위성은 반알렌대를 통과하며, 이 안에서 주기적인 운동으로 남극과 북극을 이동하는 하전입자에 의해 전자부품이 쉽게 손상되고 수명이 단축되는 등 악 영향을 받고 있다. 특히 방사선에 의한 SEU (Single Event Upset) 등은 인공위성에 탑재된 반도체 소자의 오동작 유발의 원인이 되고 있다. 본 논문은 한국원자력 연구원의 고에너지 ($300keV{\sim}1MeV$) 전자빔 조사장치를 이용하여 태양전지에 전자빔을 조사하고 이 때 변화되는 각각의 파라미터들에 대한 값을 측정하고자 한다. 이러한 연구는 저궤도 인공위성에서 전력을 생산하기 위해서 사용하는 전력용 태양 전지의 방사능 영향을 이해하는 데도 많은 영향을 줄 수 있을 것으로 기대된다.

Numerical optimization of transmission bremsstrahlung target for intense pulsed electron beam

  • Yu, Xiao;Shen, Jie;Zhang, Shijian;Zhang, Jie;Zhang, Nan;Egorov, Ivan Sergeevich;Yan, Sha;Tan, Chang;Remnev, Gennady Efimovich;Le, Xiaoyun
    • Nuclear Engineering and Technology
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    • 제54권2호
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    • pp.666-673
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    • 2022
  • The optimization of a transmission type bremsstrahlung conversion target was carried out with Monte Carlo code FLUKA for intense pulsed electron beams with electron energy of several hundred keV for maximum photon fluence. The photon emission intensity from electrons with energy ranging from 300 keV to 1 MeV on tungsten, tantalum and molybdenum targets was calculated with varied target thicknesses. The research revealed that higher target material element number and electron energy leads to increased photon fluence. For a certain target material, the target thickness with maximum photon emission fluence exhibits a linear relationship with the electron energy. With certain electron energy and target material, the thickness of the target plays a dominant role in increasing the transmission photon intensity, with small target thickness the photon flux is largely restricted by low energy loss of electrons for photon generation while thick targets may impose extra absorption for the generated photons. The spatial distribution of bremsstrahlung photon density was analyzed and the optimal target thicknesses for maximum bremsstrahlung photon fluence were derived versus electron energy on three target materials for a quick determination of optimal target design.

9%Ni 강의 전자빔 용접성에 관한 연구 II -비이드형상에 미치는$a_b$parameter의 영향 (A study on the electrom beam weldability of 9%Ni steel (II) - Effect of $a_b$ parameter on bead shape -)

  • 김숙환;강정윤
    • Journal of Welding and Joining
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    • 제15권3호
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    • pp.88-98
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    • 1997
  • Welding defects, such as porosity and spike, have sometimes occurred in deep penetration electron beam welds. These defects are known to be one of the serious problem in electron beam welds. So, effects of active parameters ($a_b$) on bead shape and occurrence of defects in electron beam welds of heavy section 9%Ni steel plates were investigated. Partial penetration welding in flat position, and deep penetration welding of 10 ~ 28mm depth were investigated in this study. It is desirable to select low accelerating voltage and above the surface focus position $a_b$$\geq$1.2 at which a wine-cup shaped bead is obtained to avoid the welding defects such as spike and root porosity. When the accelerating voltage of electron beam was low (90kV), active parameter ($a_b$) did not influence on the bead width, penetration depth and weld defects significantly. However, in case of high voltage ($\geq$120kV), active parameter ($a_b$) was sensitively associated with penetraton depth and weld defects, i.e. when the active parameter (($a_b$) was in the range of 0.6 to 1.0, the depth of penetration was always over the target (23mm), while the depth of penetration was dramatically decreased with further increase of active parameter ($a_b$). The weld defects were decreased with the increase of active parameter $a_b$ resulting in the decrease of energy density of the focused beam in the root part of fusion zone.

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Effects of E-beam treatment on the interfacial and mechanical properties of henequen/polypropylene composites

  • Cho, Dong-Hwan;Lee, Hyun-Seok;Han, Seong-Ok;Drzal, Lawrence T.
    • Advanced Composite Materials
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    • 제16권4호
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    • pp.315-334
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    • 2007
  • In the present study, chopped henequen natural fibers without and with surface modification by electron beam (E-beam) treatment were incorporated into a polypropylene matrix. Prior to composite fabrication, a bundle of raw henequen fibers were treated at various E-beam intensities from 10 kGy to 500 kGy. The effect of E-beam intensity on the interfacial, mechanical and thermal properties of randomly oriented henequen/polypropylene composites with the fiber contents of 40 vol% was investigated focusing on the interfacial shear strength, flexural and tensile properties, dynamic mechanical properties, thermal stability, and fracture behavior. Each characteristic of the material strongly depended on the E-beam intensity irradiated, showing an increasing or decreasing effect. The present study demonstrates that henequen fiber surfaces can be modified successfully with an appropriate dosage of electron beam and use of a low E-beam intensity of 10 kGy results in the improvement of the interfacial properties, flexural properties, tensile properties, dynamic mechanical properties and thermal stability of henequen/polypropylene composites.

고출력 저에너지 이온빔을 이용한 InP(100) 표면의 나노 패턴형성 (Fabrication of Nanostructures on InP(100) Surface with Irradiation of Low Energy and High Flux Ion Beams)

  • 박종용;최형욱;;정연식;최원국
    • 한국재료학회지
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    • 제15권6호
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    • pp.361-369
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    • 2005
  • InP(100) crystal surface was irradiated by ion beams with low energy $(180\~225\;eV)$ and high flux $(\~10^{15}/cm^2/s)$, Self-organization process induced by ion beam was investigated by examining nano structures formed during ion beam sputtering. As an ion source, an electrostatic closed electron Hall drift thruster with a broad beam size was used. While the incident angle $(\theta)$, ion flux (J), and ion fluence $(\phi)$ were changed and InP crystal was rotated, cone-like, ripple, and anistropic nanostrucuture formed on the surface were analyzed by an atomic force microscope. The wavelength of the ripple is about 40 nm smaller than ever reported values and depends on the ion flux as $\lambda{\propto}J^{-1/2}$, which is coincident with the B-H model. As the incident angle is varied, the root mean square of the surface roughness slightly increases up to the critical angle but suddenly decreases due to the decrease of sputtering yield. By the rotation of the sample, the formation of nano dots with the size of $95\~260\;nm$ is clearly observed.

몬테카를로 시뮬레이션을 이용한 복숭아의 방사선 조사 (Monte Carlo Simulation of Irradiation Treatment of Peaches (Prunus persica L. Batsch))

  • 김종순;김동현;박종민;최원식;권순홍
    • 한국산업융합학회 논문집
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    • 제21권6호
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    • pp.337-344
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    • 2018
  • Food irradiation is important not only in ensuring safety but also improving antioxidant activity of peaches. Our objective was to establish the best irradiation treatment for peaches by calculating dose distribution using Monte Carlo simulation. 3-D geometry and component densities of peaches, extracted from CT scan, were entered into MCNP to obtain simulated dose distribution. Radiation energies for electron beam were 1.35 MeV (low energy) and 10 MeV (high energy). Co (1.25 MeV) and the Husman irradiator, containing three sealed Cs source rods in an annular array, were used for gamma irradiation. At 1.35 MeV electron beam simulation, electrons penetrated well beyond the peach skin, enough for surface treatment for microorganisms and allergens. At 10 MeV electron beam simulation, for top-beam only treatment, doses at the core were the highest and for double beam treatment, the electron energy was absorbed by the entire sample. At Co source, the radiation doses were presented on the whole area. At Cs source, the dose uniformity ratios were 2.78 for one source and 1.48 for three ones at 120 degrees interval. Proper control of irradiation treatment is critical to establish confidence in the irradiation process.

X선과 저에너지 전자선에 의한 DNA 손상 (DNA Damage by X-ray and Low Energy Electron Beam Irradiation)

  • 박연수;노형아;조혁
    • Journal of Radiation Protection and Research
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    • 제33권2호
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    • pp.53-59
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    • 2008
  • X선과 같은 고에너지 방사선에 의한 DNA 손상 중 간접적인 손상을 확인하기 위하여 탄탈륨(Ta) 박막위에 동결건조 과정으로 만들어진 pGEM-3Zf(-) plasmid DNA 단일층(monolayer)의 박막을 만든 다음, 에너지가 1.5 keV인 Al $K{\alpha}$ X선을 0분, 3분, 7분, 10분 동안 초고진공 상태에서 이 DNA 단일층에 조사하여 평균 흡수선량(mean absorbed dose)의 변화에 따른 DNA 손상을 관찰하였다. 또한 3 eV의 낮은 에너지 전자선을 조사하여 그 결과를 X선을 조사한 경우와 비교하였다. X선과 낮은 에너지 전자선으로 조사된 plasmid DNA를 전기영동(electrophoresis) 방법을 이용해 supercoiled DNA와 unsupercoiled DNA로 분리한 후 각각을 정량적으로 분석하였다. Supercoiled DNA는 X선과 3 eV 전자선의 조사에 따른 평균흡수선량이 증가함에 따라 선형적으로 감소했다. 그와 반대로 circular DNA와 crosslinked form 1 DNA는 평균흡수선량이 증가함에 따라 선형적으로 증가했다. 이것은 supercoiled DNA가 낮은 에너지 전자와 상호작용하여 외가닥 절단(single strand break)을 일으켰고 그 결과 unsupercoiled DNA로 변화되었음을 보여준다. 본 실험을 통해 X선과 같은 고에너지 방사선에 의한 DNA의 간접적 손상이 일어남을 관찰할 수 있었고, DNA의 이온화 에너지보다 작은 에너지($0{\sim}10\;eV$)를 갖는 전자에 의해서도 DNA 손상이 일어날 수 있음을 확인할 수 있었다.

전자빔 다이오드 구조개선에 의한 대전력 후진파발진기의 구현 (Implementation of a High Power Backward Wave Oscillator on Electron Beam Diode Structure Improvement)

  • 김원섭
    • 한국전기전자재료학회논문지
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    • 제22권10호
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    • pp.897-903
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    • 2009
  • We have designed the backward wave oscillator. A power-pulsed generator oscillated at 24 GHz has higher frequency than current one. It is very inportant to prevent microwave from going into the beam diode, since intence microwave will harmfully affect beam generation. Due to the axial mode operation, there exist a critial value of beam energy for the oscillation. By changing the condition at the SWS end, an enhanced performance of the K-band oversized BWO is observed in a low magnetic field region about 0.8T.