• 한국진공학회지
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• 제11권2호
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• pp.108-112
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• 2002

AC 플라즈마 디스플레이 패널의 보호막으로 널리 사용되고 있는 MgO막의 2차 전자 방출계수를 저에너지 불활성 기체이온에 대해 펄스 이온빔 기법으로 측정하였다. 실리콘 산화막의 헬륨이온에 의한 2차 전자 방출계수는 300 eV에서 0.82를 보였지만 50 eV에서는 0.22보여 운동에너지에 대한 상당한 의존성을 보였다. 한편, MgO막의 이차전자 방출계수는 이온에 의한 스퍼터링이 지속됨에 따라 0.62에서 0.3으로 감소함으로써 이온충돌이 MgO의 이차전자 방출계수에 상당한 영향을 미치는 것을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• 전자공학회논문지A
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• 제31A권9호
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• pp.96-103
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• 1994

The GaAs epilayer was grown at low temperature (LT. 250.deg. C) by molecular beam epitaxy. The properties of the LTT GaAs, before and after Rapid Thermal Annealing(RTA), were analyzed by Reflection of High Energy Electron Diffraction (RHEED), Double Crystal X-ray(DCX), Raman spectroscopy, PL and Photo-Induced Current Transient Spectroscopy (PICTS). The LT GaAs before RTA, was analyzed by RHEED and DCX, with a result of an improved surface morphology under a relatively As-rich(As/Ga ratio :28) condition, and of an increased lattics parameter of 1.1 1.7% in comparison with a GaAs substrate. However DCX and Raman spectroscopy revealed that the expanded lattics parameter and the crystallinity of LT GaAs could be recovered after RTA. On the other hand, PL spectra indicated that LT GaAs after RTA showed low optical sensitivity unlike High Temperature(HT) GaAs, and that its surface morphology and crystallinity were corresponded with those of HT GaAs. Finally PICTS spectra proved the fact that low sensitivity of LT GaAs was due to the deep level defects (Ec-0.85eV) which were strogly formed by raising RTA temperature to 750.deg. C.

• 대한방사선치료학회지
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• 제8권1호
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• pp.41-54
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• 1996

The secondary electrons developed by interaction between primary beam and a tray mounted for blocks in Megavoltage irradiation result in excess soft radiation dose to the surface layer. To reduce this electron contamination, electron filters have been used to be attached under a tray. Various filters with Cu and Al plates in six different thickness and Cu/Al combined plates in 3 different thickness were tested to measure the reduction rate of secondary electron contamination to the surface layer. The measurement to find optimal filter was performed on 6MV linear accelerator in $10 cm{\times}10 cm$ field size and fixed 78.5cm source to measurement points distance from surface to maximum build up point in 2mm intervals. The result was analyzed as the ratio of measured doses with using filters, to standard doses of measured open beam. The result of this study was fellowing : 1. The contaminated low energy radiation were mainly produced by blocking tray. 2. The surface absorbed dose was slowly increased by increasing irradiation field size but rapidly increased at field size above $15cm{\times}15cm$. 3. Al plate upto 2.5mm thickness used as a filter was found to be inadequate due to the failure of reduction of the surface absorbed dose below doses of the under surface upto the maximal build up. Cu 0.5mm plate and Cu 0.28mm/A1 1.5mm compound plate were found to be optimal filters. 4. By using these 2 filters, the absorbed dose to the surface were effectively reduced $5.5\%$ in field size $4cm{\times}4cm,\;11.3\%$ in field size $10cm{\times}10cm,\;22.3\%$ in field size $25cm{\times}25cm$. 5. In field size $10cm{\times}10cm$, the absorbed dose to the surface of irradiation was reduced by setting TSD 20cm at least,. but effective and enough dose reduction could be achieved by setting TSD 30cm as 2 optimal filters used. 6. More surface dose absorbed at TSD less than 7.4cm with a tray and filters together indicated that soft radiation was also developed by filters. 7. The variation of PDD by the different size of irradiation field was minimal as 2 optimal filters used. There was also not different in variation of PDD according to using any of two different filters. 8. PDD was not effected either by various TSD or by using the different filter among two.

• Nuclear Engineering and Technology
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• 제14권2호
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• pp.70-77
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• 1982

전자선을 이용하여 저밀도 폴리에틸렌을 가교시킬때의 삼관능성 단위체와 산화방지제의 효과를 검토하였다. 가교촉진제로서는 삼관능성 단량체인 Trimethylolpropane triacrylate(TMPTA), Trimethylolpropane trimethacrylate(TMPTM)과 Triallyl cyanurate(TAC)가 사용되었고, 산화방지제로서는 Irganox 1010(Pentaerythritol-tetrakist[3-(3,5-di-t-butyl-4-hydroxyphenyl)-propionate]), Santo-nox R(4,4'-Thio-bis(3-methyl-6-t-butylphenol)), Nocrac D(N-phenyl-$\beta$-naphthylamine)와 Bisphenol A(4,4'-Iso-propylidene bisphenol)가 사용되었다. 삼관능성 단위체중에서 TMPTA가 폴리에틸렌의 가교도를 제일 크게 높였으며 또한 산화안정성도 부여했다. 산화방지제중에서 Nocrac D가 폴리에틸렌에 가장 적당한 것으로 나타났다.

• 한국식품영양과학회지
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• 제42권11호
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• pp.1857-1863
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• 2013

전자선 조사된 마늘분말을 혼합하여 불고기소스를 제조한 후 살균처리($85^{\circ}C$, 30 min)와 혼합비(1, 3, 5%)에 따른 열발광(thermoluminescence, TL)특성을 서로 다른 연구기관에서 확인하였다. 비 조사 마늘분말이 혼합된 소스의 TL 발광곡선은 자연방사선에 의해 $300^{\circ}C$ 이후에서 나타났다. 그러나 조사원료(1 kGy, 10 kGy)가 혼합된 소스의 경우 $150{\sim}250^{\circ}C$에서 나타났으며, 원료의 혼합량 및 조사선량이 낮을수록 발광곡선의 강도는 감소하였다. TL ratio($TL_1/TL_2$)는 조사 원료가 혼합된 시료구에서도 모두 0.1 이하로 나타나 조사여부 판정은 어려웠으며, 살균 처리 후에는 발광강도는 감소하고 발광온도범위는 고온영역으로 이동하여 낮은 혼합시료(1 kGy 조사 마늘분말, 1%)에서는 판별이 어려운 것으로 확인되었다. 조사 원료가 소량 혼입된 가공식품의 판별 시에는 TL 발광곡선의 형태와 최대 발광온도를 복합적으로 고려하여 조사여부를 확인하여야 할 것으로 판단되었다.

• 열처리공학회지
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• 제21권5호
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• pp.235-243
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• 2008

Ni-C composite films were prepared using a combination of microwave plasma CVD and ion beam sputtering deposition working in a codeposition way. The structure of these films was characterized by energy-dispersive X-ray diffraction (EDXRD), transmission electron microscopy (TEM) and Raman spectroscopy. It was found that a nickel carbide phase, $Ni_3C$ (hcp), formed as very fine crystallites over a wide temperature range when Ni-C films were deposited at low $CH_4$ flow rates. The thermal stability of this nonequilibrium carbide $Ni_3C$ was also studied. As a result, the $Ni_3C$ carbide was found to decompose into nickel and graphite at around $400^{\circ}C$. With high $CH_4$ flow rates (> 0.2 sccm), the structure of the Ni-C films became amorphous. The formation behavior of the carbide and amorphous Ni-C phases are discussed in relation to the electrical resistivity of the films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.175-175
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• 1999

Circumventing problems lying in the conventional lithographic techniques, we devised a new method for the fabrication of nanometer scale metal wires inspired by the unique characteristics of carbon nanotubes (CNTs). Since carbon nanotubes could act as masks when CNT-coated thin Au/Ti layer on a SiO2 surface was physically etched by low energy argon ion bombardment 9ion milling), Au/Ti nano-wires were successfully formed just below the CNTs exactly duplicating their lateral shapes. Cross-sectional analysis by transmission electron microscopy revealed that the edge of the metal wire was very sharply developed indicating the great difference in the milling rates between the CNTs and the metal layer as well as the good directionality of the ion milling. We could easily find a few nanometer-wide Au/Ti wires among the wires of various width. After the formation of nano-wires, the CNTs could be pushed away from the metal nano-wire by atomic force microscopy, The lateral force for the removal of the CNTs are dependent upon the width and shape of the wires. Resistance of the metal nano-wires without the CNTs was also measured through the micro-contacts definted by electron beam lithography. since this CNT-based lithographic technique is, in principle, applicable to any kinds of materials, it can be very useful in exploring the fields of nano-science and technology, especially when it is combines with the CNT manipulation techniques.

• Journal of Welding and Joining
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• 제34권4호
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• pp.1-8
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• 2016

Metal AM(Additive Manufacturing) has been steadily developed and that is classified into two method. PBF(Powder Bed Fusion) deposited in the bed by the laser or electron beam as a heat source of the powder material and DED(Directed Energy Deposition) deposited by varied heat source of powder and solid filler material. In the developed countries has been applying high productivity process of solid filler metal based DED method to the aerospace and defense sectors. The price of the powder material is quite expensive compared to the solid filler metal. A study on DED method that is based on a solid filler metal is increasing significantly although was low accuracy and degree of freedom.

• Current Photovoltaic Research
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• 제1권1호
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.