• Advances in nano research
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• v.4 no.1
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• pp.45-50
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• 2016

Data of Raman spectroscopy from graphene and few-layer graphene (FLG) irradiated by SEM electron beam in the range of energies 0.2 -30 keV are presented. The obvious effect of damaging the nanostructures by all used beam energies for specimens placed on insulator substrates ($SiO_2$) was revealed. At the same time, no signs of structural defects were observed in the cases when FLG have been arranged on metallic substrate. A new physical mechanism of under threshold energy defect production supposing possible formation of intensive electrical charged puddles on insulator substrate surface is suggested.

• Progress in Medical Physics
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• v.5 no.1
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• pp.87-99
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• 1994

Purpose : The determination of electron beam output factor was investigated from individual applicator for various energy of ML-15MDX linear accelerator. The output factor of electron beam was extended from square to rectangular field in individual applicator size through with a least-square fit to a polynomial expression. Materials : In this experiments. the measurement of output was obtained from 2${\times}$cm$^2$ to 20${\times}$20cm$^2$ of field size in different applicator size for 4 to 15 MaV electron beam energy. The output factor was defined as the ratio of maximum dose output on the central axis of the field of individual applicator size to that of a given field size. Applicator factors were derived from comparing with the output dose of reference field size 10${\times}$10cm$^2$. The thickness of block was specially designed as 10mm in thickness of Lipowitz metal for field shaping in all electron energy. Two types of output curves are included as output factors versus side of square fields and that of variable side length for X and Y in one-dimensional to compare the expected values to that of experiments. Results : Expected output factors of rectangular which was derived from that of square fields in individual applicator size from 2${\times}$2cm$^2$ to 20${\times}$20cm$^2$ in different electron energy was very closed to that of experimental measurements within 2% uncertainty. However 1D method showed a 3% discrepancy in small rectangular field for low energy electron beam. Conclusion : Emperical non-linear polynomial regressions of square root and 1D method were performed to determin the output factor in various field size and electron energy. The expected output of electron beam of square root method for square field and 1D method for rectangular field were very closed to that of measurement in all selected electron beam energy.

• Journal of Radiation Protection and Research
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• v.42 no.1
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• pp.63-68
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• 2017

Background: The combined effect of the low energy electron (LEE) irradiation and $Cu^{2+}$ ion on DNA damage was investigated. Materials and Methods: Lyophilized pBR322 plasmid DNA films with various concentrations (1-15 mM) of $Cu^{2+}$ ion were independently irradiated by monochromatic LEEs with 5 eV. The types of DNA damage, single strand break (SSB) and double strand break (DSB), were separated and quantified by gel electrophoresis. Results and Discussion: Without electron irradiation, DNA damage was slightly increased with increasing Cu ion concentration via Fenton reaction. LEE-induced DNA damage, with no Cu ion, was only 6.6% via dissociative electron attachment (DEA) process. However, DNA damage was significantly increased through the combined effect of LEE-irradiation and Cu ion, except around 9 mM Cu ion. The possible pathways of DNA damage for each of these different cases were suggested. Conclusion: The combined effect of LEE-irradiation and Cu ion is likely to cause increasing dissociation after elevated transient negative ion state, resulting in the enhanced DNA damage. For the decrease of DNA damage at around 9-mM Cu ion, it is assumed to be related to the structural stabilization due to DNA inter- and intra-crosslinks via Cu ion.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.68-70
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• 2006

For the aluminum material of the thick-thickness more than 100mm Penetration depth Electron beam welding is effectively applicable with a characteristic of high energy intensity. But Al 6061 alloy has high crack sensitivity due to minor alloys, which are silicon, magnesium, copper etc. With a sample block of 135mm thickness EBW test was performed in vertical position. As tensile strength has $210{\sim}220N/mm^2$ with weld area broken. Bend test shows low ductility with fracture of partly specimens. Chemical contents of alloys show no difference between weld and base metal. Defect in middle weld area figures out typical hot crack due to low melting materials. Micro structure of weld area has some difference compare to HAZ and base metal. As a result of EBW test for Al 6061 alloy, it shows that weld defect could be occurred even though establishing of optimum weld parameter condition.

• Journal of Biosystems Engineering
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• v.38 no.2
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• pp.87-94
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• 2013

Purpose: Pineapple is now the third most important tropical fruit in world production after banana and citrus. Phytosanitary irradiation is recognized as a promising alternative treatment to chemical fumigation. However, most of the phytosanitary irradiation studies have dealt with physiochemical properties and its efficacy. Accurate dose calculation is crucial for ensuring proper process control in phytosanitary irradiation. The objective of this study was to optimize phytosanitary irradiation treatment of pineapple in various radiation sources using Monte Carlo simulation. Methods: 3-D geometry and component densities of the pineapple, extracted from CT scan data, were entered into a radiation transport Monte Carlo code (MCNP5) to obtain simulated dose distribution. Radiation energy used for simulation were 2 MeV (low-energy) and 10 MeV (high-energy) for electron beams, 1.25 MeV for gamma-rays, and 5 MeV for X-rays. Results: For low-energy electron beam simulation, electrons penetrated up to 0.75 cm from the pineapple skin, which is good for controlling insect eggs laid just below the fruit surface. For high-energy electron beam simulation, electrons penetrated up to 4.5 cm and the irradiation area occupied 60.2% of the whole area at single-side irradiation and 90.6% at double-side irradiation. For a single-side only gamma- and X-ray source simulation, the entire pineapple was irradiated and dose uniformity ratios (Dmax/Dmin) were 2.23 and 2.19, respectively. Even though both sources had all greater penetrating capability, the X-ray treatment is safer and the gamma-ray treatment is more widely used due to their availability. Conclusions: These results are invaluable for optimizing phytosanitary irradiation treatment planning of pineapple.

• Radiation Oncology Journal
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• v.5 no.2
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• pp.157-163
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• 1987

It is known that fixed source to skin distance (SSD) cannot be used when the treatment field is sloped or larger than the size of second collimator in electron beam irradiation and inverse square law using effective ssd should be adopted. Effective SSDs were measured in different field sizes in each 6, 9, 12, 15 and 18MeV electron energy by suing NELAC 1018D linear accelerator of Kosin Medical Center. We found important parmeters of effective SSD. 1. Minimum effective SSD was 58.8cm in small field size of $6\pm6cm$ and maximum effective SSD was 94.9cm in large field size of $25\pm25cm$, with 6MeV energy. It's difference was 36.1cm. The dose rate at measuring point was quite different even with a small difference of SSD in small field $(6\times6cm)$ and low energy (6 MeV). 2. Effective SSD increased with field size in same electron energy. 3. Effective SSDs gradually increased with the electron energies and reached maximum at 12 or 15 MeV electron energy and decreased again at 18MeV electron energy in each identical field size. And so the effective SSD should be measured in each energy and field size for practical radiotherapy.

• Journal of Soil and Groundwater Environment
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• v.7 no.3
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• pp.61-70
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• 2002

Direct electron beam irradiation experiments on artificially contaminated soil by polynuclear aromatic hydrocarbons (PAHs) and polychlorinated biphenyls (PCBs) were performed to evaluate applicability of direct electron beam irradiation process for contaminated soil remediation. The removal efficiency of PAHs was about 97 % at 600 kGy and PCBs about 70 % at 800 kGy. PAHs were removed 27 % more, compared to PCBs although the absorbed dose was as low as 200 kGy. The contaminants decomposition was due predominantly to direct interaction of high-energy electrons and the target compounds rather than due to oxidation/reduction reaction by reactive intermediates. Radiolysis of electron beam may be able to decontaminate contaminated soil by toxic and recalcitrant organic compounds like as PAHs and PCBs effectively, but it may be economically uncompetitive. Thus, developments of post-treatment process of conventional site remediation technologies may be more practical and economical than direct radiolysis.

• Corrosion Science and Technology
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• v.17 no.3
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• pp.123-128
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• 2018

The fabrication of a controlled surface is of great interest because it can be applied to various engineering facilities due to the various properties of the surface, such as self-cleaning, anti-bio-fouling, anti-icing, anti-corrosion, and anti-sticking. Controlled surfaces with micro/nano structures were fabricated using an ion beam focused onto a polypropylene (PP) surface with a fluoridation process. We developed a facile method of fabricating hydrophobic surfaces through ion beam treatment with argon and oxygen ions. The fabrication of low surface energy materials can replace the current expensive and complex manufacturing process. The contact angles (CAs) of the sample surface were $106^{\circ}$ and $108^{\circ}$ degrees using argon and oxygen ions, respectively. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) spectroscopy were used to determine the chemical composition of the surface. The morphology change of the surfaces was observed by scanning electron microscopy (SEM). The change of the surface morphology using the ion beam was shown to be very effective and provide enhanced optical properties. It is therefore expected that the prepared surface with wear and corrosion resistance might have a considerable potential in large scale industrial applications.

• Journal of Radiation Protection and Research
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• v.40 no.2
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• pp.87-91
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• 2015

We have employed X-ray photoelectron spectroscopy (XPS) technique to examine the combined effects of low-energy electron (LEE) irradiation and $Fe^{3+}$ ion on DNA damage. pBR322 plasmid DNA extracted from E. coli ER2420 was used for preparing DNA-$Fe^{3+}$ sample. The C1s XPS spectra were scanned for LEE-irradiated and LEE-unirradiated samples and then curve-fitted. For the samples with LEE irradiation only or with Fe ion only, no significant changes from pure DNA samples were observed - a single effect of either $Fe^{3+}$ ion or LEE irradiation did not cause a significant damage. However, when these two components were combined, the DNA damage was increased quite significantly, compared to the sum of DNA damages caused by $Fe^{3+}$ ion and by LEE irradiation independently. This observation is consistent with our previous results [Radiat. Res. 177, 775 (2012)] which was done using gel-electrophoresis technique. Partial interpretation of the observed spectrum peaks was also attempted.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.