• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.54-58
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• 2017

The effect of low temperature ($250^{\circ}C$) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ${\sim}10^5$ and the $V_{TH}$ values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at $400^{\circ}C$ representing on/off ratio of ${\sim}10^2$ and S. S. value of 10.40 V/decade.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.382-387
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• 2005

Polyvinylidene fluoride (PVDF) surface was irradiated and became superhydrophilic by low energy (180 eV) and high flux $(\~10^{15}/cm{\cdot}s)$ ion beam. As an ion source, a closed electron Hall drift thruster of $\phi=70mm$ outer channel size without grid was adopted. Ar, $O_2$ and $N_2O$ were used for source gases. When $N_2O^+$ and $O_2^+$ reactive gas ion beam were irradiated with the ion fluence of $5\times10^{15}/cm^2$, the wetting angle for deionized water was drastically dropped from $61^{\circ}\;to\;4^{\circ}\;and\;2^{\circ}$, respectively. Surface energy was also increased up to from 44 mN/m to 81 mN/m. Change of chemical component in PVDF surface was analyzed by x-ray photoelectron spectroscopy. Such a great increase of the surface energy was intimately related with the increase of hydrophilic group component in reactive ion irradiated PVDF surfaces. By using an atomic force microscopy, the root-mean-square of surface roughness of ion irradiated PVDF was not much altered compared to that of pristine PVDF.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.1-5
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• 2008

This paper analyzes on the radiation effect of silicon solar cells in a low Earth orbit satellite by using high energy electron beams. Generally, the satellite circling round in a low orbit go through Van Allen belt, in which electronic components are easily damaged and shortened by charged particles moving in a cycle between the South Pole and the North Pole. For example, Single Event Upset (SEU) by radiation could cause electronic devices on satellite to malfunction. From the ground experiment in which we used the high energy electron beam facility at Knrea Atomic Energy Research Institute (KAERI), we tried to explain sun sensor degradations on orbit could he caused by high energy electrons. While we focused on the solar cells used for light detectors, We convince our research also contributes to understand the radiation effect of solar cells generating electric powers on satellites.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.666-673
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• 2022

The optimization of a transmission type bremsstrahlung conversion target was carried out with Monte Carlo code FLUKA for intense pulsed electron beams with electron energy of several hundred keV for maximum photon fluence. The photon emission intensity from electrons with energy ranging from 300 keV to 1 MeV on tungsten, tantalum and molybdenum targets was calculated with varied target thicknesses. The research revealed that higher target material element number and electron energy leads to increased photon fluence. For a certain target material, the target thickness with maximum photon emission fluence exhibits a linear relationship with the electron energy. With certain electron energy and target material, the thickness of the target plays a dominant role in increasing the transmission photon intensity, with small target thickness the photon flux is largely restricted by low energy loss of electrons for photon generation while thick targets may impose extra absorption for the generated photons. The spatial distribution of bremsstrahlung photon density was analyzed and the optimal target thicknesses for maximum bremsstrahlung photon fluence were derived versus electron energy on three target materials for a quick determination of optimal target design.

• Journal of Welding and Joining
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• v.15 no.3
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• pp.88-98
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• 1997

Welding defects, such as porosity and spike, have sometimes occurred in deep penetration electron beam welds. These defects are known to be one of the serious problem in electron beam welds. So, effects of active parameters ($a_b$) on bead shape and occurrence of defects in electron beam welds of heavy section 9%Ni steel plates were investigated. Partial penetration welding in flat position, and deep penetration welding of 10 ~ 28mm depth were investigated in this study. It is desirable to select low accelerating voltage and above the surface focus position $a_b$$\geq$1.2 at which a wine-cup shaped bead is obtained to avoid the welding defects such as spike and root porosity. When the accelerating voltage of electron beam was low (90kV), active parameter ($a_b$) did not influence on the bead width, penetration depth and weld defects significantly. However, in case of high voltage ($\geq$120kV), active parameter ($a_b$) was sensitively associated with penetraton depth and weld defects, i.e. when the active parameter (($a_b$) was in the range of 0.6 to 1.0, the depth of penetration was always over the target (23mm), while the depth of penetration was dramatically decreased with further increase of active parameter ($a_b$). The weld defects were decreased with the increase of active parameter $a_b$ resulting in the decrease of energy density of the focused beam in the root part of fusion zone.

• Advanced Composite Materials
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• v.16 no.4
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• pp.315-334
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• 2007

In the present study, chopped henequen natural fibers without and with surface modification by electron beam (E-beam) treatment were incorporated into a polypropylene matrix. Prior to composite fabrication, a bundle of raw henequen fibers were treated at various E-beam intensities from 10 kGy to 500 kGy. The effect of E-beam intensity on the interfacial, mechanical and thermal properties of randomly oriented henequen/polypropylene composites with the fiber contents of 40 vol% was investigated focusing on the interfacial shear strength, flexural and tensile properties, dynamic mechanical properties, thermal stability, and fracture behavior. Each characteristic of the material strongly depended on the E-beam intensity irradiated, showing an increasing or decreasing effect. The present study demonstrates that henequen fiber surfaces can be modified successfully with an appropriate dosage of electron beam and use of a low E-beam intensity of 10 kGy results in the improvement of the interfacial properties, flexural properties, tensile properties, dynamic mechanical properties and thermal stability of henequen/polypropylene composites.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.361-369
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• 2005

InP(100) crystal surface was irradiated by ion beams with low energy $(180\~225\;eV)$ and high flux $(\~10^{15}/cm^2/s)$, Self-organization process induced by ion beam was investigated by examining nano structures formed during ion beam sputtering. As an ion source, an electrostatic closed electron Hall drift thruster with a broad beam size was used. While the incident angle $(\theta)$, ion flux (J), and ion fluence $(\phi)$ were changed and InP crystal was rotated, cone-like, ripple, and anistropic nanostrucuture formed on the surface were analyzed by an atomic force microscope. The wavelength of the ripple is about 40 nm smaller than ever reported values and depends on the ion flux as $\lambda{\propto}J^{-1/2}$, which is coincident with the B-H model. As the incident angle is varied, the root mean square of the surface roughness slightly increases up to the critical angle but suddenly decreases due to the decrease of sputtering yield. By the rotation of the sample, the formation of nano dots with the size of $95\~260\;nm$ is clearly observed.

• Journal of the Korean Society of Industry Convergence
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• v.21 no.6
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• pp.337-344
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• 2018

Food irradiation is important not only in ensuring safety but also improving antioxidant activity of peaches. Our objective was to establish the best irradiation treatment for peaches by calculating dose distribution using Monte Carlo simulation. 3-D geometry and component densities of peaches, extracted from CT scan, were entered into MCNP to obtain simulated dose distribution. Radiation energies for electron beam were 1.35 MeV (low energy) and 10 MeV (high energy). Co (1.25 MeV) and the Husman irradiator, containing three sealed Cs source rods in an annular array, were used for gamma irradiation. At 1.35 MeV electron beam simulation, electrons penetrated well beyond the peach skin, enough for surface treatment for microorganisms and allergens. At 10 MeV electron beam simulation, for top-beam only treatment, doses at the core were the highest and for double beam treatment, the electron energy was absorbed by the entire sample. At Co source, the radiation doses were presented on the whole area. At Cs source, the dose uniformity ratios were 2.78 for one source and 1.48 for three ones at 120 degrees interval. Proper control of irradiation treatment is critical to establish confidence in the irradiation process.

• Journal of Radiation Protection and Research
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• v.33 no.2
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• pp.53-59
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• 2008

We observed DNA damages as a function of mean absorbed dose to identify the indirect effect of high-energy radiation such as x-ray. Monolayer films of lyophilized pGEM-3Zf(-) plasmid DNA deposited on tantalum foils were exposed to Al $K{\alpha}$ X-ray (1.5 keV) for 0, 3, 7 and 10 min, respectively, in a condition of ultrahigh vacuum state. We compared DNA damages by X-ray irradiation with those by 3 eV electron irradiation. X-ray photons produced low-energy electrons (mainly below 20 eV) from the tantalum foils and DNA damage was induced chiefly by these electrons. For electron beam irradiation, DNA damage was directly caused by 3 eV electrons. Irradiated DNA was analyzed by agarose gel electrophoresis and quantified by ImagaQuant program. The quantities of remained supercoiled DNA after irradiation were linearly decreased as a function of mean absorbed dose. On the other hand, the yields of nicked circular (single strand break, SSB) and interduplex crosslinked form 1 DNA were linearly increased as a function of mean absorbed dose. From this study, it was confirmed that DNA damage was also induced by low energy electrons ($0{\sim}10\;eV$) even below threshold energies for the ionization of DNA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.897-903
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• 2009

We have designed the backward wave oscillator. A power-pulsed generator oscillated at 24 GHz has higher frequency than current one. It is very inportant to prevent microwave from going into the beam diode, since intence microwave will harmfully affect beam generation. Due to the axial mode operation, there exist a critial value of beam energy for the oscillation. By changing the condition at the SWS end, an enhanced performance of the K-band oversized BWO is observed in a low magnetic field region about 0.8T.