• Title/Summary/Keyword: Loss-of-Heat-Sink

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Investigation of Heat Transfer in Microchannel with One-Side Heating Condition Using Numerical Analysis (수치 해석을 이용한 단일 마이크로채널의 단면 가열 조건의 열전달 특성에 관한 연구)

  • Choi, Chi-Woong;Huh, Cheol;Kim, Dong-Eok;Kim, Moo-Hwan
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.31 no.12
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    • pp.986-993
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    • 2007
  • The microchannel heat sink is promising heat dissipation method far high density electronic devices. The cross-sectional shape of MEMS based microchannel heat sink is limited to triangular, trapezoidal, and rectangular due to their fabrication method. And heat is added to one side surface of heat source. Therefore, those specific conditions make some complexity of heat transfer in microchannel heat sink. Though many previous research of conjugate heat transfer in microchannel was conducted, most of them did not consider heat loss. In this study, numerical investigation of conjugate heat transfer in rectangular microchannel was conducted. The method of heat loss evaluation was verified numerically. Heat distribution was different for each wall of rectangular microchannel due to thermal conductivity and distance from heat source. However, the ratio of heat from each channel wall was correlated. Therefore, the effective area correction factor could be proposed to evaluate accurate heat flux in one side heating condition.

STEAM GENERATOR TUBE INTEGRITY ANALYSIS OF A TOTAL LOSS OF ALL HEAT SINKS ACCIDENT FOR WOLSONG NPP UNIT 1

  • Lim, Heok-Soon;Song, Tae-Young;Chi, Moon-Goo;Kim, Seoung-Rae
    • Nuclear Engineering and Technology
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    • v.46 no.1
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    • pp.39-46
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    • 2014
  • A total loss of all heat sinks is considered a severe accident with a low probability of occurrence. Following a total loss of all heat sinks, the degasser/condenser relief valves (DCRV) become the sole means available for the depressurization of the primary heat transport system. If a nuclear power plant has a total loss of heat sinks accident, high-temperature steam and differential pressure between the primary heat transport system (PHTS) and the steam generator (SG) secondary side can cause a SG tube creep rupture. To protect the PHTS during a total loss of all heat sinks accident, a sufficient depressurization capability of the degasser/condenser relief valve and the SG tube integrity is very important. Therefore, an accurate estimation of the discharge through these valves is necessary to assess the impact of the PHTS overprotection and the SG tube integrity of the primary circuit. This paper describes the analysis of DCRV discharge capacity and the SG tube integrity under a total loss of all heat sink using the CATHENA code. It was found that the DCRV's discharge capacity is enough to protect the overpressure in the PHTS, and the SG tube integrity is maintained in a total loss of all heat accident.

The Analysis of Electrical Conduction and Corrosion Phenomena in HVDC Cooling System and the Optimized Design of the Heat Sink of the Semiconductor Devices (HVDC 냉각시스템의 전기전도현상 및 부식현상 기술 분석과 스위칭 소자의 방열판 최적 설계 검토)

  • Kim, Chan-Ki;Park, Chang-Hwan;Kim, Jang-Mok
    • The Transactions of the Korean Institute of Power Electronics
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    • v.22 no.6
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    • pp.484-495
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    • 2017
  • In HVDC thyristor valves, more than 95% of heat loss occurs in snubber resistors and valve reactors. In order to dissipate the heat from the valves and to suppress the electrolytic current, water with a high heat capacity and a low conductivity of less than 0.2 uS/cm must be used as a refrigerant of the heat sink. The cooling parts must also be arranged to reduce the electrolytic current, whereas the pipe that supplies water to the thyristor heat sink must have the same electric potential as the valve. Corrosion is mainly caused by electrochemical reactions and the influence of water quality and leakage current. This paper identifies the refrigerants involved in the ionization, electrical conductivity, and corrosion in HVDC thyristor valves. A method for preventing corrosion is then introduced. The design of the heat sink with an excellent heat radiation is also analyzed in detail.

Study on Thermal Characteristics of Smart LED Driver ICs Package (일체형 스마트 LED Driver ICs 패키지의 열 특성 분석)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.2
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    • pp.79-83
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    • 2016
  • This research was analyzed thermal characteristics that was appointed disadvantage when smart LED driver ICs was packaged and we applied extracted thermal characteristics for optimal layout design. We confirmed reliability of smart LED driver ICs package without additional heat sink. If the package is not heat sink, we are possible to minimize package. For extracting thermal loss due to overshoot current, we increased driver current by two and three times. As a result of experiment, we obtained 22 mW and 49.5 mW thermal loss. And we obtained optimal data of 350 mA driver current. It is important to distance between power MOSFET and driver ICs. If thhe distance was increased, the temperature of package was decreased. And so we obtained optimal data of 3.7 mm distance between power MOSFET and driver ICs. Finally, we fabricated real package and we analyzed the electrical characteristics. We obtained constant 35 V output voltage and 80% efficiency.

COMPARISON OF THE DECAY HEAT REMOVAL SYSTEMS IN THE KALIMER-600 AND DSFR

  • Ha, Kwi-Seok;Jeong, Hae-Yong
    • Nuclear Engineering and Technology
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    • v.44 no.5
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    • pp.535-542
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    • 2012
  • A sodium-cooled demonstration fast reactor with the KALIMER-600 as a reference plant is under design by KAERI. The safety grade decay heat removal system (DHRS), which is important to mitigate design basis accidents, was changed in the reactor design. A loss of heat sink and a vessel leak in design basis accidents were simulated using the MARS-LMR system transient analysis code on two plant systems. In the analyses, the DHRS of KALIMER-600 had a weakness due to elevation of the overflow path for the DHRS operation, while it was proved that the DHRS of the demonstration reactor had superior heat transfer characteristics due to the simplified heat transfer mechanism.

BACKUP AND ULTIMATE HEAT SINKS IN CANDU REACTORS FOR PROLONGED SBO ACCIDENTS

  • Nitheanandan, T.;Brown, M.J.
    • Nuclear Engineering and Technology
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    • v.45 no.5
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    • pp.589-596
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    • 2013
  • In a pressurized heavy water reactor, following loss of the primary coolant, severe core damage would begin with the depletion of the liquid moderator, exposing the top row of internally-voided fuel channels to steam cooling conditions on the inside and outside. The uncovered fuel channels would heat up, deform and disassemble into core debris. Large inventories of water passively reduce the rate of progression of the accident, prolonging the time for complete loss of engineered heat sinks. The efficacy of available backup and ultimate heat sinks, available in a CANDU 6 reactor, in mitigating the consequences of a prolonged station blackout scenario was analysed using the MAAP4-CANDU code. The analysis indicated that the steam generator secondary side water inventory is the most effective heat sink during the accident. Additional heat sinks such as the primary coolant, moderator, calandria vault water and end shield water are also able to remove decay heat; however, a gradually increasing mismatch between heat generation and heat removal occurs over the course of the postulated event. This mismatch is equivalent to an additional water inventory estimated to be 350,000 kg at the time of calandria vessel failure. In the Enhanced CANDU 6 reactor ~2,040,000 kg of water in the reserve water tank is available for prolonged emergencies requiring heat sinks.

A Study on the Efficiency Prediction of Low-Voltage and High-Current dc-dc Converters Using GaN FET-based Synchronous Rectifier (GaN FET 기반 동기정류기를 적용한 저전압-대전류 DC-DC Converter 효율예측)

  • Jeong, Jea-Woong;Kim, Hyun-Bin;Kim, Jong-Soo;Kim, Nam-Joon
    • The Transactions of the Korean Institute of Power Electronics
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    • v.22 no.4
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    • pp.297-304
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    • 2017
  • The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

Fresnel lens-DCPC-concentrating solar cell-heat sink type solar module (Fresnel 렌즈-DCPC-집광형태양전지-방열판형 solar module에 관한 연구)

  • 송진수
    • 전기의세계
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    • v.30 no.10
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    • pp.655-661
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    • 1981
  • The concentrating solar module with high concentration ratio(320)has been studied.in this paper. The solar module was composed of the EMVJ solar cell, (Fresnel Lens-DCPC)concentrator and heat sink, and was measured by using the PASTF system. The experimental result and the result analysis for the individual item of the module were as f ollows; (1) The conversion efficiency of the module was 8.3%. (2) The optical efficiency of the concentrator was 46.5% (DCPC; 84.8%, Fresnel Lens; 54.8%). (3) The thermal loss of the solar cell was 4.9%. And methods for the further improvement of the concentrating solar module efficiency have been suggested.

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Numerical analysis of heat dissipation performance of heat sink for IGBT module depending on serpentine channel shape (수치 해석을 통한 절연 게이트 양극성 트랜지스터 모듈의 히트 싱크 유로 형상에 따른 방열 성능 분석)

  • Son, Jonghyun;Park, Sungkeun;Kim, Young-Beom
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.22 no.3
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    • pp.415-421
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    • 2021
  • This study analyzed the effect on the cooling performance of the channel shape of a heat sink for an insulated gate bipolar transistor (IGBT). A serpentine channel was used for this analysis, and the parameter for the analysis was the number of curves. The analysis was conducted using computational fluid dynamics with the commercial software ANSYS fluent. One curve in the channel improved the heat dissipation performance of the heat sink by up to 8% compared to a straight-channel heat sink. However, two curves in the channel could not improve the heat discharge performance further. Instead, the two curves caused a higher pressure drop, which induces parasitic loss for the pumping of coolant. The pressure drop of the two-curve channel case was 2.48-2.55 times larger than that of a one-curve channel. This higher pressure drop decreased the heat discharge efficiency of the heat sink with two curves. The discharge heat per unit pressure drop was calculated, and the result of the straight heat sink was highest among the analyzed cases. This means that the heat discharge efficiency of the straight heat sink is the highest.

Study on Thermal Analysis for Optimization LED Driver ICs

  • Chung, Hun-Suk
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.2
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    • pp.59-61
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    • 2017
  • This research was analyzed thermal characteristics that was appointed disadvantage when smart LED driver ICs was packaged and we applied extracted thermal characteristics for optimal layout design. We confirmed reliability of smart LED driver ICs package without additional heat sink. If the package is not heat sink, we are possible to minimize package. For extracting thermal loss due to overshoot current, we increased driver current by two and three times. As a result of experiment, we obtained 22 mW and 49.5 mW thermal loss. And we obtained optimal data of 350 mA driver current. It is important to distance between power MOSFET and driver ICs. If the distance was increased, the temperature of package was decreased. And so we obtained optimal data of 3.7 mm distance between power MOSFET and driver ICs. Finally, we fabricated real package and we analyzed the electrical characteristics. We obtained constant 35 V output voltage and 80% efficiency.