• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.53-60
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• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.325-329
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• 1998

In this paper, the (Sr$_{1-x}$ Ca$_{x}$)TiO$_3$(SCT) thin films were deposited at various substrate temperature using RF magnetron sputtering method on optimized Pt-coated electrodes (Pt/TiN/SiO$_2$/Si). An influence of substrate temperature and annealing temperature on the structural and dielectric properties are investigated. The substrate temperature changed from 100[$^{\circ}C$] to 500[$^{\circ}C$] and crystalline SCT thin films were deposited abode 400[$^{\circ}C$]. All thin films had (111) preferred orientation, the (100) oriented films were obtained at the substrate temperature above 400[$^{\circ}C$]. The dielectric constant changes almost linearly in the temperature region of -80~+90[$^{\circ}C$], the temperature characteristics of the dielectric loss exhibited a stable value within 0.1, then not affected by substitutional contents. The capacitance characteristics appears a stable value within $\pm$5[%].

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1577-1579
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• 2003

AlN thin films are prepared on Si (111) substrate by RF magnetron sputtering. Two-step deposition method is proposed to obtain AlN thin films with high c-axis (002)-TC value and low surface roughnesses. For all the deposited AlN films, the c-axis (002)-orientation, surface mophology, and roughness are characterized in terms of deposition conditions FEAR devices with Al/AlN/Mo/Si(111) configuration are also fabricated. From the frequency response characteristics, the return loss and electromechanical coupling contant($k_t{^2}$) are estimated.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.3 s.96
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• pp.9-17
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• 1999

This paper presents a method of grinding and polishing automation of precision die after CNC machining. The method employs a robot system equipped with a pneumatic spindle and a special abrasive film pad. The robot program is automatically generated off-line program form a PC and downloaded to robot controller. Position and orientation data for the program is supplied form cutter contact (CC) data of NC machining process. This eliminates separate robot teaching process. This paper aims at practical automation of die finishing process which is very time consuming and suffering from shortage of workpeople. Time loss due to changeover from one product to another is eliminated by PC off-line programming exploiting appropriate NC machining data. Dextrous 6-axis robot with rigid wrist and simple tooling enables the process applicable to larger, rather complex 3 dimensional free surfaces.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 1997.11a
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• pp.77-84
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• 1997

Cone calorimeter measurements can be used for the calculation of effective material properties, which can be used as input parameters in modeling of fire. Main parameter measured in Cone calorimeter is heat release rate. Some other parameters as time to ignition, effective heat of combustion, mass loss rate or total heat released is also measured in Cone calorimeter. Total heat released is important from the point of view of total energy available in material in Fire situation. Cone calorimeter. measurements were done on several wood species (oak, beech, spruce, poplar). Measurements were provided at external irradiances 30, 50 and 65 ㎾/$m_2$ in horizontal orientation. Heat release rate data were evaluated and compared as a function of external irradiance for various species of wood. furthermore the influence of external irradiance on effective heat of combustion and total heat release was also evaluated for the period of flame combustion.

• Textile Coloration and Finishing
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• v.2 no.2
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• pp.1-6
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• 1990

In order to investigate the fine structural changes of poly (ethylene terephthalate) film by hydrazinolysis, PET was treated with hydrazine hydrate in methanol at $30^{\circ}C$ for various times. Initially apparent crystallite size and degree of orientation are increased and then, gradually decreased with hydrazinolysis. According to thermoluminescence measurement, trap site decreased by dissolution and then gradually increased with growth of defect in structure. Maximum peak temperature of tan and dynamic loss modulus E" upon hydrazinolysis shifted to the lower temperature in the progress of hydrazinolysis.ysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.663-666
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• 2004

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films film fabricatedon MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrates, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constants, dielectric loss and tunability of the BST thin films annealed at 700 C deposited on the MgO(100)/Si substrates measured at 10 kHz were 515.9, 0.0082, and 54.3 %, respectively.

• Nuclear Engineering and Technology
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• v.53 no.11
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• pp.3597-3611
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• 2021

The present paper studies the thermal-hydraulic behaviour of the rectangular supercritical natural circulation loop (SCNCL) using numerical model of one dimensional. Then the results of this model is confirmed with experimental and benchmark results. Variations with several geometric parameters like loop diameter, riser length, and heater length and operating conditions like heater inlet enthalpy, pressure, friction factor, and inlet and exit loss coefficient on steady-state performance are investigated for various orientations like HHHC, HHVC, VHVC and VHHC of the heater and cooler. The chances of existing static instability (Ledinegg excursion) has been investigated, which reveals that it can arise only in a low inlet enthalpy condition, far from the suggested various orientations of heater and cooler.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.88-92
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• 2003

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

• Journal of Sensor Science and Technology
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• v.11 no.4
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• pp.247-253
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• 2002

For fabrication of the pyroelectric IR sensor $(Pb,La)TiO_3(PLT)$/$LiTaO_3$/(LTO)/PLT ferroelectric thin films was deposited by rf magnetron sputtering followed by rapid thermal annealing and the crystallinity as a function of annealing temperature and time was investigated. Permittivity and dielectric loss factor of ferroelectric thin films as a function of c-axis preffered orientation was measured. Also pyroelectric coefficient of ferroelectric thin films with largest c-axis preffered orientation was measured and obtain figure of merit of voltage response($F_V$) and detectivity($F_D$). In this case $F_V$, $F_D$ was $5.63{\times}10^{-10}\;C{\cdot}cm/J$, $1.98{\times}10^{-8}\;C{\cdot}cm/J$, respectively.