• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.2
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• pp.179-184
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• 2016

The electrical load testing system developed from this study was designed to control rated-capacity-testing or variable-load-testing in an active and precise manner and save electric energy during testing, and also to convert the saved electric energy through the electrical load testing system to grid line. As for the device under testing, it was designed to be applied to not only transformer, rectifier, voltage regulator, inverter which require grid voltage source but, also applied to electric power, aerogenerator, photovoltaic, hybrid generator, battery, etc. which do not require grid voltage source. The system was designed to return the power consumed during the testing to the grid line by connecting the synchronizing pwm inverter circuit to the grid voltage source, and was also made to enable the being-tested system from disuse of approximately 93.4% energy when compared to the conventional load testing system which has used the passive resistor.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.55 no.10
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• pp.435-442
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• 2006

One of the most important topics about the safety of electrical and electronic system is the reliability of the wiring system. The Time-Frequency Domain Reflectometry(TFDR) is a state-of-the-art system for detecting and estimating of the fault on a wiring. In this paper, We've considered the load resistance measurement on a coaxial cable using TFDR in a way of expanded application. The TFDR system was built using commercial Pci extensions for Instrumentation(PXI) and LabVIEW. The proposed real time TFDR system consisted of the reference signal design, signal generation, signal acquisition, algorithm execution and results display part. To implement real time system, all of the parts were programmed by the LabVIEW which is one of the graphical programming languages. Using the application software implemented by the LabVIEW, we were able to design a proper reference signal which is suitable for target cable and control not only the arbitrary waveform generator in the signal generation part but alto the digital storage oscilloscope in the signal acquisition part. By using the TFDR real time system with the terminal resistor on the target cable, we carried out load impedance measurement experiments. The experimental results showed that the proposed system are able not only to detect the location of impedance discontinuity on the cable but also to estimate the load resistance with high accuracy.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.172-177
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• 2016

Miller feedback compensation is introduced in a low dropout regulator (LDO) in order to obtain a capacitor-free regulator and improve the fast transient response. The conventional LDO has a limited bandwidth because of the large-size output capacitor and parasitic gate capacitance in the power MOSFET. In order to obtain a stable frequency response without the output capacitor, LDO is designed with resistor-capacitor (R-C) compensation and this is achieved with a connection between the gain-stage and the power MOS. An R-C compensator is suggested to provide a pole and zero to improve the stability. The proposed LDO is designed with the 0.35 μm CMOS process. Simulation testing shows that the phase margin in the Bode plot indicates a stable response, which is over 100^o. In the load regulation, the transient time is within 55 μs when the load current changes from 0.1 to 1 mA.

• Journal of Advanced Marine Engineering and Technology
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• v.13 no.1
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• pp.57-68
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• 1989

This paper treats the analytical and experimental studies on the improvement of commutating circuit for the speed control of DC motor. A simple circuit composed of R, L and C elements is proposed here for switching off power SCR carrying the load current. The real important in this chopper circuit is to determine the reasonable values of commutating circuit constants. In this paper, the reasonable values of the commutating circuit constants are basically determined on a view point of commutating performances in the given circuit model and must satisfy the following conditions. The first, the peak commutating current should be larger than the anticipated maximum load current. The second, the circuit turn-off time (tc) must be longer than the SCR turn-off time (tq). The third, the resistor should be enough large to permit the current to be neglected in the analysis of the commutation circuit, as well as be enough small to permit to charge the capacity voltage (Ec) to the half the value of source voltage (E) before the next communication cycle is initiated. The last, the period of chopping signal must be the least possible multiple of the damping vibration period of commutating circuit. The improved chopper circuit used in the experiment under unloaded condition was composed to meet the reasonable conditions mentioned above, and a successful commuting performance was achieved without failure. Several types of microprocessor having a different value of CPU speed individually have been applied to the experiment under the loaded conditions. Also it shows that the faster the speed of CPU is, the more stable the commutation turns out.

• Journal of Power Electronics
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• v.3 no.2
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• pp.139-144
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• 2003

In this paper, 11 and 13 layered step-down piezoelectric transformers were fabricated and their electrical characteristics have been analyzed for AC-adapter. When the voltage is applied to the driving piezoelectric vibrator polarized in the longitudinal direction, the output voltage is generated at the generating piezoelectric vibrator polarized in the thickness direction due to the piezoelectric effects. From the piezoelectric direct and converse effects, symbolic expressions between the electric inputs and outputs of the step-down piezoelectric transformer are derived with an equivalent circuit model. With those expressions, load and frequency characteristics are discussed through the simulations. Output voltage and current from a 11-layered and a 13-layered piezoelectric transformers were measured under the different load and frequency conditions. First we measured resonant frequency from impedance curve and got equivalent impedance value of the piezoelectric transformer from admittance plot. It was shown from experiments that output voltage increase s and resonant frequency changes according to the various resistor loads. Output current decreases inversely proportional to the change of loads. Moreover, the measured output voltage and current are well matched with the simulated results obtained from the proposed equivalent circuit model. Furthermore, a new step-down piezoelectric transformer has been suggested to Increase the output power based on a simulation result having a driving piezoelectric vibrator polarized thickness direction.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.9 s.351
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• pp.23-30
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• 2006

This paper presents a design of a high-efficiency CMOS DC-DC boost converter using a current-sensing feedback method. High-precision current-sensing circuity is incorporated in order to sense the current flowing in the inductor, which determines the switching scheme of the pulse-width modulation. The external components or large chip area for the frequency compensation can be avoided while maintaining the stable operations of the converter. Various input/output voltage levels can be available through the external resistor strings. The designed DC-DC converter is fabricated in a 0.18-um CMOS technology with a thick-gate oxide option. The converter shows the maximum efficiency over 90% for the output voltage of 3.3V and load current larger than 200mA. The load regulation is 1.15% for the load current change of 100mA.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.7
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• pp.943-949
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• 2013

Recently, an electric vehicle (EV) has been become a huge issue in the automotive industry. The EV has many electrical units: electric motors, batteries, converters, etc. The DC distribution power system (DPS) is essential for the EV. The DC DPS offers many advantages. However, multiple loads in the DC DPS may affect the severe instability on the DC bus voltage. Therefore, a voltage bus conditioner (VBC) may use the DC DPS. The VBC is used to mitigate the voltage transient on the bus. Thus, a suitable control technique should be selected for the VBC. In this research, Current controller with fixed switching frequency is designed and applied for the VBC. The DC DPS consist of both a resistor load and a boost converter load. The load variations cause the instability of the DC DPS. This instability is mitigated by the VBC. The simulation results by Matlab simulink and experimental results are presented for validating the proposed VBC and designed control technique.

• Journal of Industrial Technology
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• v.40 no.1
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• pp.13-18
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• 2020

Lithium-ion batteries have a small volume, light weight and high energy density, maximizing the utilization of mobile devices. It is widely used for various purposes such as electric bicycles and scooters (e-Mobility), mass energy storage (ESS), and electric and hybrid vehicles. To date, lithium-ion batteries have grown to focus on increasing energy density and reducing production costs in line with the required capacity. However, the research and development level of lithium-ion batteries seems to have reached the limit in terms of energy density. In addition, the charging time is an important factor for using lithium-ion batteries. Therefore, it was urgent to develop a high-speed charger to shorten the charging time. In this thesis, a discharger was fabricated to evaluate the capacity and characteristics of Li-ion battery pack which can be used for e-mobility. To achieve this, a smart discharger is designed with a combination of active load, current sensor, and temperature sensor. To carry out this thesis, an active load switching using sensor control circuit, signal processing circuit, and FET was designed and manufactured as hardware with the characteristics of active discharger. And as software for controlling the hardware of the active discharger, a Raspberry Pi control device and a touch screen program were designed. The developed discharger is designed to change the 600W capacity battery in the form of active load.

• Journal of IKEEE
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• v.1 no.1 s.1
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• pp.11-18
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• 1997

By utilizing the technique to monitor the DC cell node voltages through circuit simulation, degradation of the static read operating margin In high load-resistor SRAM cell was examined, which is caused by parasitic resistances and transistor asymmetries in this cell structure. By selectively adding the parasitic resistances to an ideal cell, the influence of each parasitic resistance on the operating margin was examined, and then the cases with parasitic resistances in pairs were also examined. By selectively changing the channel width of cell transistors to generate cell asymmetry, the influence of cell asymmetry on the operating margin was also examined. Analyses on the operating margins were performed by comparing the supply voltage values at which two cell node voltages merge to a single value and the differences of cell node voltages at VDD=5V in the simulated node voltage characteristics. By determining the parasitic resistances and the transistor asymmetries which give the most serious effect on the static read-operation of SRAM cell from this analysis based on circuit simulated, a criteria was provided, which can be referred in the design of new SRAM cell structures.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.9
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• pp.1013-1020
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• 1992

The conductivity variation of a high resistivity bulk silicon semiconductor, whose electrodes were deposited with aluminum vapor, was studied experimentally by measuring the X-ray intensity and current flow, which was developed by X-ray radiation while applying a pulse voltage to the silicon, in a load resistor connected to the semiconductor. The current flow observed immediately as the X-ray radiated, and when the X-ray decreased. It was found from the observation of switching current for the X-ray intensity and the voltage applied in the semiconductor that the switching current of the semiconductor increased as the intensity of the X-ray and the applied voltage increased. In case of lower applied voltage, the switching current for higher applied voltage depended on the intensity of the X-ray radiated due to the saturation of electron and hole.