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http://dx.doi.org/10.4313/TEEM.2016.17.3.172

Effect of R-C Compensation on Switching Regulation of CMOS Low Dropout Regulator  

Choi, Ikguen (College of Electrical & Computer Engineering, Chungbuk National University)
Jeong, Hyeim (College of Electrical & Computer Engineering, Chungbuk National University)
Yu, Junho (College of Electrical & Computer Engineering, Chungbuk National University)
Kim, Namsoo (College of Electrical & Computer Engineering, Chungbuk National University)
Publication Information
Transactions on Electrical and Electronic Materials / v.17, no.3, 2016 , pp. 172-177 More about this Journal
Abstract
Miller feedback compensation is introduced in a low dropout regulator (LDO) in order to obtain a capacitor-free regulator and improve the fast transient response. The conventional LDO has a limited bandwidth because of the large-size output capacitor and parasitic gate capacitance in the power MOSFET. In order to obtain a stable frequency response without the output capacitor, LDO is designed with resistor-capacitor (R-C) compensation and this is achieved with a connection between the gain-stage and the power MOS. An R-C compensator is suggested to provide a pole and zero to improve the stability. The proposed LDO is designed with the 0.35 μm CMOS process. Simulation testing shows that the phase margin in the Bode plot indicates a stable response, which is over 100o. In the load regulation, the transient time is within 55 μs when the load current changes from 0.1 to 1 mA.
Keywords
R-C compensation; CMOS; Phase margin; Transient time;
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