• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.1
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• pp.26-32
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• 2022

This paper proposes a power system that includes a 120k W fuel cell DC-DC converter (FDC) and 30 kW bidirectional DC-DC converter (BHDC) for a 150 kW fuel-cell vehicle. With a high DC link voltage of 800 V, the efficiency and power density of the power electronic components are improved. Through the modular design of FDC and BHDC, electric components are shared, resulting in reduced mass production costs. The switching frequency of 30 kHz of full SiC devices and optimal design of coupled inductor reduce the volume, achieving a power density of 8.3 kW/L. Furthermore, a synergetic operation strategy using variable limiter control of FDC and BHDC was proposed to efficiently operate the fuel cell vehicle considering the fuel cell stack efficiency according to the load. Finally, the performance of the prototype was verified by Highway Fuel Economy Driving Schedule testing, EMI test, and the linked operation between FDC and BHDC. The full load efficiencies of the FDC and BHDC prototypes are 98.47% and 98.74%, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.1
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• pp.23-30
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• 2016

Wake effects cause wind turbine generators (WTGs) within a wind power plant (WPP) to produce different levels of active power and subsequent reactive power capabilities. Further, the impedance between a WTG and the point of interconnection (POI)-which depends on the distance between them-impacts the WPP's reactive power injection capability at the POI. This paper proposes a voltage control scheme for a WPP based on the available reactive current of the doubly-fed induction generators (DFIGs) and its impacts on the POI to improve the reactive power injection capability of the WPP. In this paper, a design strategy for modifying the gain of DFIG controller is suggested and the comprehensive properties of these control gains are investigated. In the proposed scheme, the WPP controller, which operates in a voltage control mode, sends the command signal to the DFIGs based on the voltage difference at the POI. The DFIG controllers, which operate in a voltage control mode, employ a proportional controller with a limiter. The gain of the proportional controller is adjusted depending on the available reactive current of the DFIG and the series impedance between the DFIG and the POI. The performance of the proposed scheme is validated for various disturbances such as a reactive load connection and grid fault using an EMTP-RV simulator. Simulation results demonstrate that the proposed scheme promptly recovers the POI voltage by injecting more reactive power after a disturbance than the conventional scheme.

• Progress in Superconductivity
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• v.3 no.2
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• pp.241-246
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• 2002

We have performed the current and voltage loading tests of resistive superconducting fault current limiters (SFCLS) based on $YBa_2$$Cu_3$$O_{7}$(YBCO) films with the diameter of 2 inch. The SFCL consists of meander-type YBCO stripes covered with 200 nm Au layer grown in situ for current shunt and heat dispersion at hot spots. The minimum quench current of an SFCL unit was about 25 Apeak. Seven SFCL units were connected in parallel fur the current load ing tests at power source of 100 $V_{rms}$ $/2,000A_{rms}$. This SFCL units had maximum limiting current of 170 Apeak during the fault instant and then successfully controlled the fault current below 100 Apeak within 1~2 msec after short circuit. Increased short current also reduced the quench completion time with little change of current limiting characterization. We connected six SFCL units in series fur the voltage loading tests at power source of $1,200 V_{rms}$/170 $A_{rms}$ at this time. The shunt resistors were inserted into each SFCL unit to eliminate power imbalance originated from serial connection of SFCL units. Each SFCL unit was quenched simultaneously during the fault condition. The current increased up to 40 $A_{peak}$ and decreased to 14 $A_{peak}$ after 3 cycles. Quench was completed within 1 msec after the fault. We confirmed operating characteristics of 140 kVA($120 A_{rms}$ $\times$ 1,200 $V_{rms}$) SFCL and presented the manufacturing possibility of 3.3 kV SFCL using 4 inch YBCO films.BCO films.lms.

• Progress in Superconductivity and Cryogenics
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• v.14 no.3
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• pp.9-12
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• 2012

Usually, the AC loss from the superconducting element of an SFCL due to the load current is very small because it is composed of the combination of bifilar windings with very small reactance. Although the AC loss is small enough, we should be albe to predict for the design and control of the cryogenic system. In fact, an SFCL for the transmission voltage class may not generate ignorable AC loss because of the inevitable space between the HTS wires for the high voltage insulation and cryogenic efficiency. To measure the AC loss dependency on the space between the 2G HTS wires with the width of 4.4 mm, we prepared an experimental setup which could adjust the distance between the wires. We used two 500-mm length HTS wires in parallel and applied the current in the opposite direction for each wire to simulate a part of a current limiting module for a high voltage SFCL. We also put two couples of voltage taps at the ends of each wire and a cancel coil in the voltage measurement circuit to compensate the reactive component from the voltage taps. In this condition, we varied the distance between the wires to investigate the change of the transport current loss. A similar experimental study with HTS wire with the width of 12 mm is now in progress.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.71-80
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• 1999

In this paper, a power MOSFET driver with protection circuits is designed using a 2${\mu}m$ high-voltage CMOS process. For stable operations of control circuits a power managing circuit is designed, and a voltage-detecting short-circuit protection(VDSCP) is proposed to protect a voltage regulator in the power control circuit. The proposed VDSCP scheme eliminates voltage drop caused by a series resistor, and turns off output current under short-circuit state. To protect a power MOSFET, a short-load protection, a gate-voltage limiter, and an over-voltage protection circuit are also designed A high voltage 2 ${\mu}m$ technology provides the breakdown voltage of 50 V. The driver consumes the power of 20 ~ 100 mW along its operation state excluding the power of the power MOSFET. The active area of the power MOSFET driver occupies $3.5 {\times}2..8mm^2$.