• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.11
• /
• pp.88-98
• /
• 1993

In this paper, the effective permittivity in the piezoelectric material is numerically obtained and greens function is derived from that. It is shown that the admittance and the transfer function of an interdigital transducer is represented by electrostatic charge distribution using Quasi-static approximation. To prove the validity of the quasi-static approximation, numerical results for the uniform IDT of a filter mounted on 128 $^{\circ}$ rotated Y-cut X-propagating Lithium Niobate are compared with the measured ones.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05b
• /
• pp.111-118
• /
• 2002

A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.4
• /
• pp.525-531
• /
• 1998

A series of $LiNbO_3$ single crystals were grown by the Czochralski method from a congruent melt, a congruent melt with 0.05 mol% $Fe_2O_3$, a congruent melt with 6 wt.% $K_2O$ and a congruent melt with 6 wt.% $K_2O$ and 0.05 mol% $Fe_2O_3$ respectively. The growth of $LiNbO_3$ crystal from a congruent melt 6 wt.% $K_2O$ leads to nearly stoichiometric specimens. This is established by studying the following properties; XRD patterns, temperature dependences of the phase transition temperature, energy of the fundamental absorption edge, the shape of the absorption band of the $OH^-$vibration and linewidths of the ESR of $Fe_{Li}^{3+}$.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.5
• /
• pp.69-79
• /
• 1999

In this paper, we proposed a diffuion model of Ti diffused lithium niobate optical waveguide for fabricating waveguides with high refractive index and compared with conventional one. The achivement of low optical insertion loss between waveguide interface and single mode fibers was discussed as a function of Ti thickness for $\lambda$=1.55$\mu\textrm{m}$ The proposed diffusion method exhibited higher refractive index waveguide than conventional one for $\lambda$=0.6328$\mu\textrm{m}$ We have achieved the total fiber-waveguide-fiber insertion loss as low as 0.5dB/cm in z-cut and 1$\pm$0.5dB/cm in x-cut for both TM and TE mode of Mach-Zehnder interferometric waveguide in the range of Ti thickness 1000-1400$\AA$ for $\lambda$=1.55$\mu\textrm{m}$ From these results, this diffusion model for making a low loss waveguide can be used for low-power-modulators and switches.

• Korean Journal of Optics and Photonics
• /
• v.32 no.2
• /
• pp.62-67
• /
• 2021

We have experimentally demonstrated sum-frequency generation (SFG) in a periodically poled lithium niobate (PPLN) crystal, using a mode-locked picosecond-pulsed fiber laser and a continuous-wave (CW) diode laser with a narrow linewidth. The mode-locked fiber laser had a center wavelength of 1560.7 nm and a spectral width of 1.1 nm, and the CW diode laser had a center wavelength of 1551.0 nm and a spectral width of 6 MHz. To effectively realize SFG, both of the spatial modes of the two lasers were made to overlap in the PPLN crystal by using a single-mode optical fiber. The pulse-mode SFG with pulsed- and CW-mode lasers was successfully observed in the spectral and time domains. These results are expected to be applicable in various ways, such as optical frequency measurement and high-resolution laser spectroscopy studies using optical frequency combs.

• Journal of the Optical Society of Korea
• /
• v.1 no.2
• /
• pp.120-120
• /
• 1997

광섬유 Fabry-Perot 간섭계를 센서로 하는 TDM 다중화 광섬유 압력/온도 센서시스템을 개발하고, 이 시스템을 이용하여 수위와 온도 측정실험을 행하였다. 측정시스템의 측정속도는 측정데이타를 저장하지 않는 경우 최대 초당 4500회이며, 센서의 응답속도는 ~1 ms로 추정된다. 압력센서와 온도센서의 특성은 이론적 추정치와 비교하여 각각 +13.7%,-18%의 차이를 보였으며, 반복실험을 통하여 선형화한 후의 선형화 오차는 1%이내, 온도의 변화가 0.1$^{\circ}C$이내 일 때 수위측정의 오차는 $\pm$0.3cm이며, 수위측정에 대한 시스템 잡음은 측정하지 않았다. 온도센서의 시스템 잡음은 0.1$^{\circ}C$이내였으며, 이 시스템을 이용하여 수위 및 온도 변화량에 대한 고속 측정실험을 수행할 결과 예상된 결과를 얻을 수 있었다.

• Journal of the Korean Ceramic Society
• /
• v.53 no.3
• /
• pp.312-316
• /
• 2016

The energetics of defects in the presence of domain walls in $LiNbO_3$ are characterized using density-functional theory calculations. Domain walls show stronger interactions with antisite defects than with interstitial defects or vacancies. As a result, antisite defects act as a strong pinning center for the domain wall in $LiNbO_3$. Analysis of migration behavior of the antisite defects across the domain wall shows that the migration barrier of the antisite defects is significantly high, such that the migration of antisite defects across the domain wall is energetically not preferable. However, further study on excess electrons shows that the migration barrier of antisite defects can be lowered by changing the charge states of the antisite defects. So, excess electrons can enhance the migration of antisite defects and thus facilitate domain wall movement by weakening the pinning effect.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.4
• /
• pp.405-410
• /
• 1994

KLN crystals were grown with various melt compositions by $\mu\textrm{m}$-PD method. The composition of KLN crystals was determined by DTA and X-ray diffraction measurements. It can be obtained that KLN micro crystals have a nearly homogeneous composition along the growth axis because of the absence of convection in melt growth interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.12
• /
• pp.1051-1057
• /
• 2000

A traveling-wave CPW(coplanar waveguide) electrode with abruptly broken input/output-taper for LiNbO$_3$optical modulator was designed and fabricated. The electrical characteristics of traveling-wave electrode on z-cut LiNbO$_3$crystal with SiO$_2$buffer layers were measured by network analyzer. To confirm the possibility of the electro-optic modulator electrode, detailed calculations of the impedance, microwave effective index and attenuation constants are presented as a function of the microwave electrode thickness, but the buffer layer thickness is fixed as 1${\mu}{\textrm}{m}$. These characteristics are discussed from the viewpoint of the device optimization and are expected to be design guides for the LiNbO$_3$modulator’s electrodes.

• Journal of the Optical Society of Korea
• /
• v.18 no.6
• /
• pp.739-745
• /
• 2014

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensor utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator, which uses a 3-dB directional coupler at the output and has two complementary output waveguides. A dc switching voltage of ~25 V and an extinction ratio of ~12.5 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf input power, the minimum detectable electric fields are ~8.21, 7.24, and ~13.3 V/m, corresponding to dynamic ranges of ~10, ~12, and ~7 dB at frequencies of 10, 30, and 50 MHz respectively. The sensors exhibit almost linear response for an applied electric-field intensity from 0.29 V/m to 29.8 V/m.