• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.228-234
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• 1989

Pressureless-sintering of SiC with additions of yttria and alumina was studied. SiC could be densified to about 97% of its theoretical density at 185$0^{\circ}C$ which is about 20$0^{\circ}C$ below the normal sintering temperature of SiC with boron and carbon. Yttria and alumina formed intergranular liquid phases at the sintering temperature and promoted densification by the liquid phase sintering mechanism. The microstructure of sintered specimens was equiaxed and the liquid phase appeared to wet and dissolve SiC grains. The fracture toughness was measured by indentation method and found to be 5.3MPa.m1/2. Processing flaws near the surface of specimens appeared to be the major fracture origin during 3-point bending tests.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.30-35
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• 2000

A floating solidification technique is a process applied extensively to the production of glass plates. We used the technique for fabrication of Si plate. We used the proper liquid substrate material of 50 wt% $SiO_2$- 21 wt% $A1_2$$O_3$-29 wt% MnO, after studying ternary phase diagram of various oxides systems. The liquid substrate material has proper properties in the aspects of temperature, density and reactivity. But results showed some problems in fluidity and surface tension of the liquid substrate material.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.88.1-88.1
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• 2012

Silicon nanowires (SiNWs), due to their unusual quantum-confinement effects that lead to superior electrical and optical properties compared to those of the bulk silicon, have been widely researched as a potential building block in a variety of novel electronic devices. The conventional means for the synthesis of SiNWs has been the vapor-liquid-solid method using chemical vapor deposition; however, this method is time consuming, environmentally unfriendly, and do not support vertical growth. As an alternate, the electroless etching method has been proposed, which uses metal catalysts contained in aqueous hydrofluoric acids (HF) for vertically etching the bulk silicon substrate. This new method can support large-area growth in a short time, and vertically aligned SiNWs with high aspect ratio can be readily synthesized with excellent reproducibility. Nonetheless, there still are rooms for improvement such as the poor surface characteristics that lead to degradation in electrical performance, and non-uniformity of the diameter and shapes of the synthesized SiNWs. Here, we report a facile method of SiNWs synthesis having uniform sizes, diameters, and shapes, which may be other than just cylindrical shapes using a modified nanosphere lithography technique. The diameters of the polystyrene nanospheres can be adjustable through varying the time of O2 plasma treatment, which serve as a mask template for metal deposition on a silicon substrate. After the removal of the nanospheres, SiNWs having the exact same shape as the mask are synthesized using wet etching technique in a solution of HF, hydrogen peroxide, and deionized water. Different electrical and optical characteristics were obtained according to the shapes and sizes of the SiNWs, which implies that they can serve specific purposes according to their types.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.46 no.2
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• pp.1-7
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• 2014

Causticizing calcium carbonate (CCC) is produced as a by-product in the causticization step of the kraft pulping process. It is often calcined in a rotary lime kiln after being dewatered and reused in the causticizing process. But for the China mill, the conventional recycled way is difficult because the CCC is mainly obtained from non-wood pulping materials, which higher silicon content led to serious silicon obstacle. So it is often discarded as solid waste or used in landfill after dewatering and secondary pollution is brought. In order to prevent its secondary pollution, recent years, the CCC is used as a filler in China papermaking industry. In mill trials, the CCC can be used to replace an amount of precipitated calcium carbonate (PCC). Unfortunately, the application scope and dosage of CCC have been limited due to its lower sizing efficiency than PCC. In this study, the reason for the lower sizing efficiency of alkyl ketene dimer (AKD) when CCC was used as a filler was investigated. The results showed that the materials in green liquid, such as insoluble matter in green liquid, silicon and metal ions, were a little influence on the sizing efficiency of AKD. The higher BET and BJH pore volume of the CCC were the main reason for lower sizing efficiency of AKD when it was used as filler.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1094-1101
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• 1999

Liquid phase sintered silicon carbides were obtained by sintering of $\alpha$-SiC and $\beta$-SiC powders as starting materials at 2173K and 2273K respectively. The SiCplatelet seeds of different sizes were obtained by a repeated ball milling and sedimentation. Their mean size (d50) were 2.217 ${\mu}{\textrm}{m}$ 13.67 ${\mu}{\textrm}{m}$, 22.17${\mu}{\textrm}{m}$ respectively 6wt%Al2O3-4 wt% Y2O3 was used as the sintering additives for the liquid phase sintering. The two silicon carbides had a bimodal microstructure consisting of small matrix grains and large platelike grains when the SiCplatelet seeds were added. In the case of the $\beta$-SiC the appreciable phase transformation occurred as sintering temperature increased from 2173K to 2273K and resulted in matrix shape change from equiaxed into platelike grains. In contrast there was no shape change for the $\alpha$-SiC. The size of large grains in the $\alpha$-SiC of large grains in the $\alpha$-SiC was larger than that of the large grains in the $\beta$-SiC These results suggested that the growth of the $\alpha$-SiCplatelet in the $\alpha$-SiC matrix was more favored than that of the $\alpha$-SiCplatelet in the $\beta$-SiC matix. The three point flexural strength decreased as the added seed size increased. Fracture toughness values of samples sintered at 2273K were higher than those of samples sintered at 2173K.

• Korean Journal of Materials Research
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• v.31 no.5
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• pp.301-311
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• 2021

The conversion of all carbon preforms to dense SiC by liquid infiltration can become a low-cost and reliable method to form SiC-Si composites of complex shape and high density. Reactive sintered silicon carbide (RBSC) is prepared by covering Si powder on top of 0.5-5.0 wt% Y₂O₃-added carbon preforms at 1,450 and 1,500℃ for 2 hours; samples are analyzed to determine densification. Reactive sintering from the Y₂O₃-free carbon preform causes Si to be pushed to one side and cracking defects occur. However, when prepared from the Y₂O₃-added carbon preform, an SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C = SiC reaction, 3C and 6H of SiC, crystalline Si, and Y₂O₃ phases are detected by XRD analysis without the appearance of graphite. As the content of Y₂O₃ in the carbon preform increases, the prepared RBSC accelerates the SiC conversion reaction, increasing the density and decreasing the pores, resulting in densification. The dense RBSC obtained by reaction sintering at 1,500 ℃ for 2 hours from a carbon preform with 2.0 wt% Y₂O₃ added has 0.20 % apparent porosity and 96.9 % relative density.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.59-59
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• 2009

The influences of B and Si in the filler metals on microstructure and isothermal solidification during transient liquid-phase (TLP) bonding of a nitrogen-containing duplex stainless steel with MBF-30 (Ni-4.5wt.%Si-3.2wt.%B) and MBF-35 (Ni-7.3wt.%Si-2.2wt.%B), were studied at the temperature range of $1030-1090^{\circ}C$ with various times from 60 s to 3600 s under a vacuum of approximately $10^{-5}$ Torr. In case of the former, BN, $Ni_3B$ and $Ni_3Si$ precipitates were formed in the bonding region. BN and $Ni_3Si$ secondary phases were present in the joint for the latter case. The formation of $Ni_3B$ within the joint centerline is dependent on B content. The morphology of $Ni_3Si$ is dominated by Si concentration. A difference between the times for complete isothermal solidification obtained by the experiments and the conventional TLP bonding diffusion model was observed when using MBF-35. According to the simulated results, the isothermal solidification completion time for MBF-35 case was smaller than that in MBF-30. However, this experimental value obtained using MBF-35 was notably larger than that obtained using MBF-30. Isothermal solidification of liquid MBF-30 is controlled by the first isothermal solidification regime dependent on B diffusion model, whereas that of liquid MBF-35 experiences two isothermal solidification regimes and is mainly controlled by the second isothermal solidification dependent on Si diffusion model. In addition, only if Si content exceeds a critical value, the slower 2nd solidification regime will commence.

• Korean Journal of Optics and Photonics
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• v.33 no.5
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• pp.218-229
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• 2022

We have investigated reliable inspection methods for finding the defects generated during the manufacturing process of lightweight, large-aperture satellite telescope mirrors using silicon carbide, and we have measured the basic physical properties of the mirrors. We applied the advanced ceramic material (ACM) method, a combined method using liquid-silicon penetration sintering and chemical vapor deposition for the carbon molded body, to manufacture four SiC mirrors of different sizes and shapes. We have provided the defect standards for the reflectors systematically by classifying the defects according to the size and shape of the mirrors, and have suggested effective nondestructive methods for mirror surface inspection and internal defect detection. In addition, we have analyzed the measurements of 14 physical parameters (including density, modulus of elasticity, specific heat, and heat-transfer coefficient) that are required to design the mirrors and to predict the mechanical and thermal stability of the final products. In particular, we have studied the detailed measurement methods and results for the elastic modulus, thermal expansion coefficient, and flexural strength to improve the reliability of mechanical property tests.

• Resources Recycling
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• v.21 no.5
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• pp.31-37
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• 2012

As a recovery of elemental silicon from the sludge of Si wafer process, a process of mechanical separation-chlorine roasting-electrolysis has been suggested. The silicon sludge consisted of Si, SiC, machine oil, and metallic impurities. The oil and metal impurities was removed by mechanical separation. The Si-SiC mixture was converted to silicon chloride by chlorine roasting at $1000^{\circ}C$ for 1 hr and the silicon chloride was dissolved into an ionic liquid of $[Bmpy]Tf_2N$ as an electrolyte. Cyclic voltammetry results showed an wide voltage window of pure $[Bmpy]Tf_2N$ and a reduction peak of elemental Si from $[Bmpy]Tf_2N$ dissolved $SiCl_4$ on Au electrode, respectively. The silicon deposits could be prepared on the Au electrode by the potentiostatic electrolysis of -1.9 V vs. Pt-QRE. The elemental silicon uniformly electrodeposited was confirmed by various analytical techniques including XRD, FE-SEM with EDS, and XPS. Any impurity was not detected except trace oxygen contaminated during handling for analysis.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.9
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• pp.50-55
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• 1999

In this paper we proposed a variable optical attenuator using the side polished fiber coupled with a refractive index matching liquid. Small variation of refractive index of matching liquid can induce very large change of optical loss due to the coupling between the fiber mode and radiation mode. The thermo-optic effect of matching liquid was used to ontrol the optical attenuation. The side polished fiber block was fabricated using the silicon V gloove. Experimental results showed that $5^{\circ}C$ temperature variation was enough to adjust full range attenuation. The polarization dependent loss and insertion loss of the fabricated devices were 0.5dB and 0.2dB respectively.