• Proceedings of the IEEK Conference
• /
• 2001.10a
• /
• pp.719-724
• /
• 2001

The objective of this investigation was to separate silicon and silica for recycling by the liquid-liquid separation technique. In the preparation of silicon (Si) single crystal, a small amount of silicon is fixed on the surface of silica (quartz, $SiO_2$) crucible. The used crucible is crushed for recycling both silicon and silica in a high purity from the mixed powder. Zeta-potential of silicon and silica are almost the same at pH higher than 3. Their separation by simple flotation is ruled out. However, their hydrophobic characteristics are different in several different organic solvent from the measurement of contact angle. Therefore, the liquid-liquid extraction is employed to separate silicon and silica. The result indicates that the organic solvent mixed with dodecyl ammonium acetate could extracted the silicon powder at high purity (97-100%) with high recovery from the silica powder in the water phase.

• The Korean Journal of Ceramics
• /
• v.3 no.4
• /
• pp.229-234
• /
• 1997

Silicon carbide-carbon fiber composites have been prepared by partially Infiltrating porous carbon fiber composites with liquid silicon at a reaction temperature of $1670^{\circ}C$. Reaction between molten silicon and the fiber preform yielded silicon carbide-carbon fiber composites composed of aggregates of loosely bonded SiC crystallites of about 10$\mu\textrm{m}$ in size and preserved the appearance of a fiber. In addition, the SiC/C fiber composites had carbon fibers coated with a dense layer consisted of SiC particles of sizes smaller than 1$\mu\textrm{m}$. The physical and mechanical properties of SiC/C fiber composites were discussed in terms of infiltrated pore volume fraction of carbon preform occupied by liquid silicon at the beginning of reaction. Lower bending strength of the SiC/C fiber composites which had a heterogeneous structure in nature, was attributed to the disruption of geometric configuration of the original carbon fiber preform and the formation of the fibrous aggregates of the loosely bonded coarse SiC particles produced by solution-precipitation mechanism.

• Journal of the Korean Ceramic Society
• /
• v.51 no.2
• /
• pp.121-126
• /
• 2014

The influence of a liquid medium duringa wet-milling process in the grinding and oxidation of silicon powder was investigated. Distilled water, dehydrated ethanol and diethylene glycol were used as the liquid media. The applied grinding times were 0.5, 3, and 12 h. Ground silicon powder samples were characterized by means of aparticle size analysis, scanning electron microscopy(SEM), x-ray powder diffraction (XRD), FT-IR spectroscopy and by a chemical composition analysis. From the results of the characterization process, we found that diethylene glycol is the most efficient liquid medium when silicon powder is ground using a wet-milling process. The FT-IR results show that the Si-O band intensity in an unground silicon powder is quite strongbecause oxygen becomes incorporated with silicon to form $SiO_2$ in air. By applying deionized water as a liquid medium for the grinding of silicon, the $SiO_2$ content increased from 4.12% to 31.7%. However, in the cases of dehydrated ethanol and diethylene glycol, it was found that the $SiO_2$ contents after grinding only changed insignificantly, from 4.12% to 5.91% and 5.28%, respectively.

• Journal of Korea Foundry Society
• /
• v.33 no.4
• /
• pp.157-161
• /
• 2013

A ribbon-type polycrystalline silicon wafer was directly fabricated from liquid silicon via a novel technique for both a fast growth rate and large grain size by exploiting gas pressure. Effects of processing parameters such as moving speed of a dummy bar and the length of the solidification zone on continuous casting of the silicon wafer were investigated. Silicon melt extruded from the growth region in the case of a solidification zone with a length of 1cm due to incomplete solidification. In case of a solidification zone wieh a length of 2 cm, on the other hand, continuous casting of the wafer was impossible due to the volume expansion of silicon derived from the liquid-solid transformation in solidification zone. Consequently, the optimal length of the solidification zone was 1.5 cm for maintaining the position of the solid-liquid interface in the solidification zone. The silicon wafer could be continuously casted when the moving speed of the dummy bar was 6 cm/min, but liquid silicon extruded from the growth region without solidification when the moving speed of the dummy bar was ${\geq}$ 9 cm/min. This was due to a shift of the position of the solid-liquid interface from the solidification zone to the moving area. The present study reports experimental findings on a new direct growth system for obtaining silicon wafers with both high quality and productivity, as a candidate for an alternate route for the fabrication of ribbon-type silicon wafers.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.12
• /
• pp.4371-4376
• /
• 2011

In this work, we investigate the growth behavior of silicon oxide nanowires via a solid-liquid-solid process. Silicon oxide nanowires were synthesized at $1000^{\circ}C$ in an Ar and $H_2$ mixed gas. A pre-oxidized silicon wafer and a nickel film are used as the substrate and catalyst, respectively. We propose two distinctive growth modes for the silicon oxide nanowires that both act as a unique solid-liquid-solid growth process. We named the two growth mechanisms "grounded-growth" and "branched-growth" modes to characterize their unique solid-liquid-solid growth behavior. The two growth modes were classified by the generation site of the nanowires. The grounded-growth mode in which the grown nanowires are generated from the substrate and the branchedgrowth mode where the nanowires are grown from the side of the previously grown nanowires or at the metal catalyst drop attached at the tip of the nanowire stem.

• Tribology and Lubricants
• /
• v.11 no.4
• /
• pp.21-27
• /
• 1995

The effects of interface boundary strength on wear and wear transition during sliding have been investigated in silicon carbide ceramics. Three different microstructures, i.e., solid state sintered silicon carbide, liquid phase sintered silicon carbide and liquid phase sintered silicon carbide composite reinforced with TiB$_{2}$ particulates, were designed by hot pressing. Examinations of crack patterns and fracture modes indicated that interface boundaries were relatively strong between silicon carbide grains in the solid state sintered silicon carbide, intermediate in the liquid phase sintered silicon carbide and weak between silicon carbide grains and TiB$_{2}$ particles in the composite. Wear data and examinations of worn surfaces revealed that the wear behavior of these silicon carbide ceramics could be significantly affected by the interface strength. In the solid state sintered silicon carbide, the wear occurred by a grooving process. In the liquid phase sintered silicon carbide and composite, on the other hand, an abrupt transition in wear mechanism from initial grooving to grain pull-out process occurred during the test. The transition occurred significantly earlier in the composite than in the carbide.

• Journal of the Korean Society of Propulsion Engineers
• /
• v.23 no.2
• /
• pp.68-77
• /
• 2019

C/SiC composites were developed by a liquid silicon infiltration(LSI) method for use as heat-resistant parts of solid and liquid rocket propulsion engines. The heat resistance characteristics according to the composition ratio (carbon / silicon / silicon carbide) were evaluated by specimen test through arc plasma, supersonic torch test. An ablation equation for oxidation reactions was presented. Through the combustion test it was verified that various parts such as nozzle insert, exit cone and combustion chamber heat resistant parts for rocket propulsion can be manufactured and proved high ablation performance and thermal structure performance.

• Journal of the Korea Society of Computer and Information
• /
• v.8 no.2
• /
• pp.57-63
• /
• 2003

In this paper, we propose the hardware architecture of a scale converter which is to convert a variety range of scale into a target scale and a time sequential color control driver for LOCS (Liquid Crystal On Silicon) micro display devices which are considered advanced micro display technology in the next generation. The driver has been implemented and tested with ASIC chips.

• Korean Journal of Metals and Materials
• /
• v.50 no.1
• /
• pp.45-51
• /
• 2012

Thermodynamics of carbon in manganese alloy melts is important in manufacturing low carbon ferromanganese and silico-manganese alloys. In order to predict the carbon solubility in liquid $Mn-Si-Fe-C_{sat}$ alloys as a function of melt composition and temperature, thermodynamic interactions among carbon, silicon and iron in carbon saturated liquid manganese should be known. In the present study, the effects of silicon and iron on the carbon solubility in Mn-Si, Mn-Fe and Mn-Si-Fe melts were measured in the temperature range from 1673 to 1773 K. The carbon solubility decreases significantly as silicon and iron contents increase in liquid manganese alloy. The interaction parameters among carbon, silicon and iron in carbon saturated liquid manganese were determined from the carbon solubility data and the Lupis' relation for the interaction coefficient at constant activity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.4
• /
• pp.322-329
• /
• 2003

We have studied how surface pretilt angle affects generation of disclination line in liquid-crystal-on silicon cells for 45$^{\circ}$-twisted nematic (TN) and vertical alignment (VA) modes with pixel size of 15$\mu\textrm{m}$. Our studies show that when the pretilt angle is increased from 0$^{\circ}$to 3$^{\circ}$ in the 45$^{\circ}$-TN cell, the disclination line at left side of on-pixel becomes weak and is well suppressed with $\theta$$\_$p/=3$^{\circ}$ although the pixel size Is decreased. In the VA cell, when the pretilt angle is decreased from 89$^{\circ}$ to 86$^{\circ}$, the disclination line at right side of the on-pixel is suppressed well and even for a smaller pixel size, it does not exist when $\theta$$\_$p/=86$^{\circ}$. The results inform that the pretilt angle strongly affects the image quality of microdisplays.