• 제목/요약/키워드: Linewidth

검색결과 206건 처리시간 0.025초

고속 파장가변 모드잠김 레이저의 제작 및 출력특성 (Fabrication and Output Characteristics of a High-Speed Wavelength Swept Mode-Locked Laser)

  • 이응제;김용평
    • 전기학회논문지
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    • 제56권6호
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    • pp.1117-1121
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    • 2007
  • We demonstrate a wavelength swept mode-locked ring laser for the frequency domain optical coherence tomography(FD OCT). A laser is constructed by using a semiconductor optical amplifier, fiber Fabry-Perot tunable filter and 2.6 km fiber ring cavity. Mode-locking is implemented by 2.6 km fiber ring cavity for matching the fundamental or harmonic of cavity roundtrip time to a sweep period. The wavelength sweeps are repetitively generated with the repetition period of 77.2 kHz which is the parallel resonance frequency of Fabry-Perot tunable filter for the low driving current consumption of the fiber Fabry-Perot tunable filter. The wavelength tuning range of the laser is more than FWHM of 61 nm centered at the wavelength of 1320 nm and the linewidth of the source is $0.014{\pm}0.002$ nm.

루비듐-87 원자 $D_2$ 전이선에 대한 광펌핑 포화분광 (Saturation Spectroscopy with Optical Pumping in $^{87}RD D_2$ Lines)

  • 이호성
    • 한국광학회지
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    • 제4권2호
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    • pp.188-194
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    • 1993
  • 루비듐-87 원자의 $D_2$ 전이선에 대해 Nakayama의 광펌핑 효과를 고려한 포화분광이론을 적용하여 공진신호의 상대적인 크기를 펌프광과 조사광의 편광 조합에 따라 계산하였고, 선폭 축소된 반도체 레이저를 사용한 실험결과와 비교해 보았다. 그 결과, 지자장을 차례했을 때의 실험결과와 계산 결과는 잘 일치하는 것을 알았다.

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DIAL용 Ti:sapphire 레이저의 다중통과 증폭특성 (Characteristics of multipass amplification of Ti:sapphire laser for DIAL)

  • 이용우;이주희
    • 한국광학회지
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    • 제7권3호
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    • pp.244-249
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    • 1996
  • DIAL의 레이저광원으로 사용하는 다중통과 Ti:sapphire의 증폭시스템을 각-다중방식으로 개발하고 출력에너지와 스펙트럼 특성을 조사하였다. 개발된 2단의 다중통과 증폭기의 특성은 790nm파장에서 최대 출력에너지는 22mJ, 증폭이득은 20dB, 펌핑에너지에 대한 출력효율은 18%이다. 또한 스펙트럼선폭은 파장가변 범위 705-845nm에서 0.15$cm^{-1}$ /(9.3pm)이다. 최대 출력에너지 때 레이저빔 발산각은 X, Y축에서 각각 1.1, 1.5mrad이며 레이저빔의 quality factir N$^{2}$은 2.6이다.

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Development of the RE indirect-heating LPE furnace and the effect of impurity in YIG film on the MSSW properties

  • Fujino, M.;Fujii, T.;Sakabe, Y.
    • 한국결정성장학회지
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    • 제12권6호
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    • pp.288-291
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    • 2002
  • We developed a new RF indirect-heating LPE furnace. The thermal gradient of our newly developed furnace is less than that of direct heating, and is as gentle as that of the resistance-heating LPE furnace. With this new furnace, the heating and/or cooling is faster than that of the resistance-heating furnace. Impurity-doped YIG film was grown from a $PbO-B_{2}O_{3}$, based flux on a (111) GGG substrate. To study the effect of the impurities on the MSSW threshold power and the saturation response time, we used two microstrip lines to excite and propagate the MSSW at 1.9 GHz. The MSSW threshold power and saturation response time was found to be related to the $\Delta$H.

Characteristics of a Bimetal-Layer Chip of a Surface Plasmon Resonance Sensor in the Intensity Interrogation for Tumor Marker Detection

  • Kim, Hyungjin;Kim, Chang-duk;Sohn, Young-Soo
    • 센서학회지
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    • 제25권4호
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    • pp.243-246
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    • 2016
  • The characteristics of a bimetallic surface plasmon resonance (SPR) chip were investigated to detect a tumor biomarker, carcinoembryonic antigen (CEA). The linewidth and the tangential slope of the reflectance curve of the bimetallic SPR chip was compared with those of the reflectance curve of a conventional gold (Au) SPR chip. The changes in reflectance in response to the variation in CEA in the critical concentration range were analyzed at an angle where the tangential slope of the reflectance curve was maximum. From linear regression analysis, the sensitivity of the bimetallic SPR chip with respect to the CEA in critical concentration was obtained.

LPE 성장법으로 성장시킨 La 을 첨가한 YIG 막의 자성특성 (Magnetic Properties of La-doped YIG films prepared by LPE(Liquid Phase Epitaxy).)

  • 김동영;한진우;김명수;이상석
    • 한국항해항만학회:학술대회논문집
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    • 한국항해항만학회 2000년도 추계학술대회논문집
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    • pp.89-92
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    • 2000
  • Liquid Phase Epitaxy 법을 이용하여 La이 첨가된 YIG(Yitrium Ion Garnet)막을 성장시켰다. X선 회절 분석을 이용하여 La의 첨가량을 변화시키며 제조된 막의 격자상수를 조사한 결과, La의 첨가량이 증가함에 따라 성장된 막의 격자상수도 증가하였으며 Y/La이 20인 경우, 막의 격자상수가 기판으로 사용한 GGG의 격자상수와 일치하였다. VSM(Vibration Sample Magnetometer)를 이용하여 구한 막의 포화자화 값은 La의 첨가량과 관계없이 순수한 YIG의 경우와 같은 값인 1750정도로 거의 일정하였다. FMR(FerroMagnetic Resonance) 측정장치를 이용한 막의 강자성 공명선폭을 측정결과 막의 공명선폭은 La의 첨가량과 관계없이 모든 경우에 순수한 YIG보다 감소하였다. 실험범위내의 La의 첨가에 대해서 기판과의 격자불일치가 순수한 YIG의 경우보다 감소하기 때문이다. La의 첨가량이 많은 조건에서 성장시킨 막은 공명선폭이 크고 두께의 증가에 따라서 선폭이 증가하였으며, YLa가 20과 30일 때 성장시킨 막에서는 공명선폭의 절대값도 작고 두께에 따른 공명선폭의 변화도 관찰되지 않았다.

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초격자 Buffer를 사용한 InGaN/GaN 양자우물에서 Piezoelectric 효과의 측정과 Strain 감소에 대한 연구 (Measurement of Piezoelectric Effect and Reduction of Strain in InGaN/GaN Quantum Well with Superlattice Buffer)

  • 공경식;안주인;이석주
    • 한국전기전자재료학회논문지
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    • 제21권6호
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    • pp.503-508
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    • 2008
  • In order to reduce the piezoelectric field originated from the well layer which resides in InGaN/GaN light emitting diode, InGaN/GaN superlattice buffer layers were grown at the bottom and the top of the active layer. Measuring the photoluminescence spectra with different reverse bias voltages clearly revealed the condition of the flat band under which the transition energy is maximized and the linewidth is minimized. Accordingly, the piezoelectric field of $In_{0.15}Ga_{0.85}N$ in our sample was estimated as -1.08 MV/cm. It is less than half the value reported in the previous studies, and it is evidenced that the strain has reduced due to the superlattice buffer layers.

ON THE EXTRACTION OF OPTICAL ROTATION CURVES FOR SPIRAL GALAXIES

  • Sohn, Young-Jonh;Rhee, Myung-Hyun;Chun, Mun-Suk
    • Journal of Astronomy and Space Sciences
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    • 제15권1호
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    • pp.27-38
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    • 1998
  • We discussed four different methods - the single, double and triple Gaussian fits, and the intensity weighted centroid fit - which extract rotation curves from several emis-sion lines(i.e. [OII], $H{\beta}$, [OIII], and $H{\alpha}$) of spiral galaxies. Spatial extents and the shapes of rotation curves derived through various methods applying to each emission lines of a sample galaxy UGC 11635 are all in a good agreement with one another. Linewidths of $H{\beta}$ and $H{\alpha}$ measure from rotation profiles are in a good agreement with $H{\alpha}$ linewidth of Courteau (1992). however, linewidths of [OII] seems to be much broader than $H{\alpha}$, and the profile of [OIII] does not follow the profile of $H{\alpha}$.

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Nanoscale-NMR with Nitrogen Vacancy center spins in diamond

  • Lee, Junghyun
    • 한국자기공명학회논문지
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    • 제24권2호
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    • pp.59-65
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    • 2020
  • Nitrogen-Vacancy (NV) center in diamond has been an emerging versatile tool for quantum sensing applications. Amongst various applications, nano-scale nuclear magnetic resonance (NMR) using a single or ensemble NV centers has demonstrated promising results, opening possibility of a single molecule NMR for its chemical structural studies or multi-nuclear spin spectroscopy for quantum information science. However, there is a key challenge, which limited the spectral resolution of NMR detection using NV centers; the interrogation duration for NV-NMR detection technique has been limited by the NV sensor spin lifetime (T1 ~ 3ms), which is orders of magnitude shorter than the coherence times of nuclear spins in bulk liquid samples (T2 ~ 1s) or intrinsic 13C nuclear spins in diamond. Recent studies have shown that quantum memory technique or synchronized readout detection technique can further narrow down the spectral linewidth of NMR signal. In this short review paper, we overview basic concepts of nanoscale NMR using NV centers, and introduce further developments in high spectral resolution NV NMR studies.

증착각도를 달리한 무기질 $a-Se_{75}Ge_{25}$ 포토레지스트의 미세패턴형성 (Submicron Pattern Delineation with the Obliquely Deposited Inorganic a-Se75Ge25 photoresist.)

  • 정홍배;이영종;류희관;허휘
    • 대한전기학회논문지
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    • 제36권9호
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    • pp.636-639
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    • 1987
  • In this study, we investigate the etching characteristics of a-Se75 Ge25 thin films. Etching properties are revealed as a function of obliqueness, temperature and concentraction of the etching solution. As the increase of obliqueness, selective etching effect increase rapidly by 35% at 80 obliqueness, and the etching rate increase the elevated temperature of the solution. The change of etching rate with obliqueness are related closely to the optical change due to the band gap illumination. We obtained clear pattern of 1.5um linewidth.

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