• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.34-37
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the inter-metal dielectrics (IMD) layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}m$ POU (point of use) filter, which is depth-type filter and has 80% filtering efficiency for the $1.0{\mu}m$ size particle. In this paper, we studied the relationship between defect generation and pad count to understand the exact efficiency of the slurry filtration, and to find out the appropriate pad usage. Our preliminary results showed that it is impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the flow rate of slurry to overcome depth type filters weak-point, and to install the high spray of de-ionized Water (DIW) with high pressure.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.438-439
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• 2006

Porcelain insulators have generally been used in Korea to insulate a transmission line from the tower, and a highly polymerized compound polymer insulator which has superior stain proof characteristics, has also been used widely. Currently, a worker rides on the suspension insulator string for installation on towers and conductors but in case of polymer insulators, this will pollute and scratch the housing result in durability reduction by deterioration and corona. This study developed a high strength aluminum compound metal lauder designed to work on polymer insulators without riding, and a clamp type connecting device and safety gear for easy installation on the tower and conductor. These polymer insulator work device can be used for 154kV and 345kV polymer insulators through a strength and load test to secure safety. This paper presents field usage.

• Transactions of Materials Processing
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• v.13 no.4
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• pp.326-333
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• 2004

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as a potential application to fabricate the surface nanosctructures because of its operational versatility and simplicity. However, nanoprobe based on lithography itself is not suitable for mass production because it is time a consuming method and not economical for commercial applications. One solution is to fabricate a mold that will be used for mass production processes such as nanoimprint, PDMS casting, and others. The objective of this study is to fabricate the silicon stamper for PDMS casting process by a mastless fabrication technique using the combination of nano/micro machining by Nanoindenter XP and KOH wet etching. Effect of the Berkovich tip alignment on the deformation was investigated. Grooves were machined on a silicon surface, which has native oxide on it, by constant load scratch (CLS), and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structures was made because of the etch mask effect of the mechanically affected layer generated by nanoscratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved groove and convex structures were used as a stamper for PDMS casting process.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.3
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• pp.123-128
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• 2016

In manufacturing processing of a secondary battery, the visual inspection system is studied and developed to check the surface defects of the electrode plates. It consists of two parts, one is the hardware control and the other software implementation. The former is made up to the system configuration and the design of the optical system, the illuminations and the controllers. The latter is the detection algorithms of the surface defects. This system achieves the quality improvement of the electrode process and the price competitiveness. By using the proposed defects detection algorithms this system demonstrates the high reliability of spot, line, manhole, extraneous substance, scratch, and crater defect of a electrode plate surface.

• Transactions of the Korean Society of Mechanical Engineers
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• v.8 no.3
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• pp.195-200
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• 1984

In-plane tension fatigue tests(R=0.1) were carried out to investigate the initiation and growth behaviors of very small surface fatigue cracks on smooth unnotched surfaces of type 304 stainless steel at room temperature. The present paper deals with the unification of two approaches to the analysis of fatigue: the one approach is based on fracture mechanics concept and the other on low-cycle fatigue concept. The results are;(1)Maximum crack length, 2 $a_{max}$, initiated at a very small surface scratch not exceeding 20 .mu.m which can exist on the surface after buffing. And the density of small surface crack is remarkably low compared to that of mild steel. (2) The growth rate, d(2a)/dN, of very small fatigue cracks can be represented by one straight line as a function of either stress intensity factor range, .DELTA. $K_{I}$ or cyclic total strain intensity factor range, .DELTA. $K_{\epsilon}$$_{I}$/, for various values of the nominal stress range.e.e.e.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.12-14
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP). process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. It is well known that the presence of hard and larger size particles in the CMP slurries increases the defect density and surface roughness of the polished wafers. In this paper, we have studied. aging effect the of CMP slurry as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.707-713
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was requirdfo the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gest thinner, micro-scratches are becoming as major defects. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}{\textrm}{m}$ point of use (POU) filter, which is depth-type filter and has 80% filtering efficiency for the 1.0${\mu}{\textrm}{m}$ size particle. In this paper, we studied the relationship between defect generation and polished wafer counts to understand the exact efficiency fo the slurry filteration, and to find out the appropriate pad usage. Our experimental results showed that it sis impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the slurry flow rate, and to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of depth type filter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.138-143
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• 2004

CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.2
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• pp.308-314
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• 2006

A line scan camera is applied to enhance COG(Chip On Glass) inspection accuracy to be measured a few micro unit. The foreign substance detection among various faulty factors has been the most difficult technology in the faulty automatic inspection step since COG pattern is very miniature and complexity. In this paper, we proposed two step area segmentation template matching method to increase matching speed. Futhermore to detect foreign substance(such as dust, scratch) with a few micro unit, the new method using gradient mask and AND operation was proposed. The proposed 2 step template matching method increased 0.3 - 0.4 second matching speed compared with conventional correlation coefficient. Also, the proposed foreign substance applied masks enhanced $5-8\%$ faulty detection rate compared with conventional no mask application method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.37-40
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. It is well known that the presence of hard and larger size particles in the CMP slurries increases the defect density and surface roughness of the polished wafers. In this paper, we have studied aging effect the of CMP slurry as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.