• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.311-311
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• 2009

Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.

• Korean Journal of Optics and Photonics
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• v.24 no.6
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• pp.342-346
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• 2013

We present the thermal analysis result of die bonding for a high power LED package using a metal hybrid silicone adhesive structure. The simulation structure consists of an LED chip, silicone die adhesive, package substrate, silicone-phosphor encapsulation, Al PCB and a heat-sink. As a result, we demonstrate that the heat generated from the chip is easily dissipated through the metal structure. The thermal resistance of the metal hybrid structure was 1.662 K/W. And the thermal resistance of the total package was 5.91 K/W. This result is comparable to the thermal resistance of a eutectic bonded LED package.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.86-90
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• 2017

$Tb^{3+}$ or $Eu^{3+}$ or $Ce^{3+}$-doped $CaYAlO_4$ phosphor were synthesized by solid-state method. $CaYAlO_4:Tb^{3+}$ is shown that the $Tb^{3+}$-doping concentration has a significant effect on the $^5D_4/^5D_3{\rightarrow}7F_J$ (J=6,...,0) emission intensity of $Tb^{3+}$. The $CaYAlO_4:Tb^{3+}$ phosphors show tunable photoluminescence from blue to yellow with the change of doping concentration of $Tb^{3+}$ ions. The $CaYAlO_4:Eu^{3+}$ phosphors exhibit a red-orange emission of $Eu^{3+}$ corresponding to $^5D_0$, $_{1,2}{\rightarrow}^7F_J$ (J=4,...,0) transitions. The $CaYAlO_4:Ce^{3+}$ phosphors show a blue emission due to $Ce^{3+}$ ions transitions from the 5d excited state to the $^2F_{5/2}$ and $^2F_{7/2}$ ground states. The decay time of $CaYAlO_4:Tb^{3+}$ phosphors decrease from 1.33 ms to 0.97 ms as $Tb^{3+}$ concentration increases from 0.1 mol% to 7 mol%. The decay time of $CaYAlO_4:Eu^{3+}$ phosphors increase from 0.94 ms to 1.17 ms as $Eu^{3+}$ concentration increases from 1 mol% to 9 mol%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.18-21
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• 2017

In this study, spherical monodispersed cerium-doped yttrium aluminum garnet (YAG : $Ce^{3+}$) phosphor particles were synthesized via homogeneous precipitation method using the mixed solution of yttrium nitrate, cerium nitrate, aluminum nitrate, ammonium aluminum sulfate, and urea as a precipitant. During the process of precursors of monodispersed YAG : $Ce^{3+}$, aluminum ions which form spherical aluminum compounds precipitated first and yttrium compounds precipitated onto the surface of the existing spherical aluminum compounds. Drying process using lyophilization could obtain monodispered spherical YAG : $Ce^{3+}$ particles compare to using oven. The thermal calcination process of YAG : $Ce^{3+}$ precursors under the temperature of $1200^{\circ}C$ for 6 h was enough to obtain 400~500 nm sized YAG particles with pure YAG phase.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.131-137
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• 2020

A series of Dy³⁺, Sm³⁺, and Dy³⁺/Sm³⁺ doped Gd₂WO₆ phosphors were synthesized by the conventional solid-state reaction. The X-ray diffraction patterns revealed that all of the diffraction peaks could be attributed to the monoclinic Gd₂WO₆ crystal structure, irrespective of the type and the concentration of activator ions. The photoluminescence (PL) excitation spectra of Dy³⁺-doped Gd₂WO₆ phosphors contained an intense charge transfer band centered at 302 nm in the range of 240-340 nm and two weak peaks at 351 and 386 nm. Under an excitation wavelength of 302 nm, the PL emission spectra consisted of two strong blue and yellow bands centered at 482 nm and 577 nm. The PL emission spectra of the Sm³⁺-doped Gd₂WO₆ phosphors had a series of three peaks centered at 568 nm, 613 nm, and 649 nm, corresponding to the ⁶G_5/2 → ⁶H_5/2, ⁶G_5/2 → ⁶H_9/2, and ⁶G_5/2 → ⁶H_11/2 transitions of Sm³⁺, respectively. The PL emission spectra of the Dy³⁺- and Sm³⁺-codoped Gd₂WO₆ phosphors showed the blue and yellow emission lines originating from the ⁴F_9/2 → ⁶H_15/2 and ⁴F_9/2 → ⁴H_13/2 transitions of Dy³⁺ and reddish-orange and red emission bands due to the ⁴G_5/2 → ⁶H_7/2 and ⁴G_5/2 → ⁶H_9/2 transitions of Sm³⁺. As the concentration of Sm³⁺ increased from 1 to 15 mol%, the intensities of two PL spectra emitted by the Dy³⁺ ions gradually decreased, while those of the three emission bands due to the Sm³⁺ ions slowly increased, thus producing the color change from white to orange. The CIE color coordinates of Gd₂WO₆:5 mol% Dy³⁺, 1 mol% Sm³⁺ phosphors were (0.406, 0.407), which was located in the warm white light region.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.