• Korean Journal of Materials Research
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• v.22 no.11
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• pp.636-641
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• 2012

In this study, we have investigated highly efficient nanoscale surface corrugated light emitting diodes (LEDs) for the enhancement of light extraction efficiency (LEE) of nitride semiconductor LEDs. Nanoscale indium tin oxide (ITO) surface corrugations are fabricated by using the conformal nanoimprint technique; it was possible to observe an enhancement of LEE for the ITO surface corrugated LEDs. By incorporating this novel method, we determined that the total output power of the surface corrugated LEDs were enhanced by 45.6% for patterned sapphire substrate LEDs and by 41.9% for flat c-plane substrate LEDs. The enhancement of LEE through nanoscale surface corrugations was studied using 3-dimensional Finite Different Time Domain (FDTD) calculation. From the FDTD calculations, we were able to separate the light extraction from the top and bottom sides of device. This process revealed that light extraction from the top and bottom sides of a device strongly depends on the substrate and the surface corrugation. We found that enhanced LEE could be understood through the mechanism of enhanced light transmission due to refractive index matching and the increase of light scattering from the corrugated surface. LEE calculations for the encapsulated LEDs devices also revealed that low LEE enhancement is expected after encapsulation due to the reduction of the refractive index contrast.

• Applied Chemistry for Engineering
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• v.32 no.2
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• pp.214-218
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• 2021

We investigated the optimal stacked structure from the perspective of process architecture (PA) through emission spectrum analysis according to the wavelength of quantum dot (QD)-organic light-emitting diodes (OLED). We confirmed that the blue-light leakage through the QD can be minimized by increasing the QD filling density above a critical value in the red QD (R-QD) layer. In addition, when the thickness of red-color filter (R-CF) at the upper part of the R-QD increased to more than 3 ㎛, the leakage of blue light through the R-CF was effectively blocked, and a very sharp emission spectrum in the red wavelength band could be obtained. According to these outstanding results, we expect that the development of QD-OLED displays with very excellent color gamut can be possibly realized.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2004.11a
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• pp.350-354
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• 2004

In this study, the wear characteristics of five different dental composite resins cured by conventional halogen light and LED light sources were investigated. Five different dental composite resins of Surefil, Z100, Dyract AP, Fuji II LC and Compoglass were worn against a zirconia ceramic ball using a pin-on-disk type wear tester with 15 N contact force in a reciprocal sliding motion of sliding distance of 10 mm/cycle at 1Hz under the room temperature dry condition. The wear variations of dental composite resins were linearly increased as the number of cycles increased. It was observed that the wear resistances of these specimens were in the order of Dyract AP > Surefil > Compoglass > Z100 > Fuji II LC. On the morphological observations by SEM, the large crack formation on the sliding track of Fuji ?LC specimen was the greatest among all resin composites. Dyract AP showed less wear with few surface damage. There is no significant difference in wear performance between conventional halogen light curing and light emitting diodes curing sources. It indicates that a light emitting diodes (LED) source can replace a halogen light source as curing unit for composite resin restorations.

• ALGAE
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• v.37 no.2
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• pp.163-174
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• 2022

Light-emitting-diodes (LEDs) are a lighting source useful for the precise evaluation of light quality effect on biological systems. Despite the importance of light spectra on the regeneration of land plant protoplasts ("naked cells"), this factor has not been tested yet on protoplasts from multicellular algae. This study reports on the effects of pure primary colors (red, blue, and green), dichromatic (red plus blue, RB, 1 : 2) and white LEDs on protoplast regeneration from male and female Undaria pinnatifida gametophytes. We also evaluated the effect of different light spectra on pigment composition (chlorophyll a, chlorophyll c, and fucoxanthine), and the light intensities under the best condition on the regeneration process. In the early stages, blue or RB LEDs increased the percentage of dividing female protoplasts, whereas red, blue, and RB LEDs enhanced that of dividing male protoplasts. In the later stages, RB LEDs showed a positive effect only on the percentage of multiple rhizoid-like protrusions (male gametophyte). They also increased the final area of both regenerated gametophytes. The LEDs did not affect pigment composition in female gametophytes. In male gametophytes, in contrast, they reduced chlorophyll c, while blue, RB, and green LEDs decreased fucoxanthin. Under RB LEDs, the optimal light intensity was 80 µmol photons m^-2 s^-1 for female gametophytes and 40 to 60 µmol photons m^-2 s^-1 for male gametophytes. Our results suggest that dichromatic LED illumination (red-blue) improves regeneration of U. pinnatifida gametophyte-isolated protoplasts. Thus, dichromatic LEDs might a suitable light source for enhancing protoplast regeneration in brown seaweeds.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.705-708
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• 2014

We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hydrogen with GaN on the W nano-mask. The optical output power of LEDs with an air-gap PC was increased by 26% compared to LEDs without an air-gap PC. The enhanced optical output power was attributed to the improvement in internal quantum efficiency and light extraction efficiency by the air-gap PC embedded in GaN layer.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.211-214
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• 2008

GaN-based light-emitting diodes (LEDs) of a 405 nm wavelength have been fabricated on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). In order to reflect the photons, which are generated in the InGaN active region and emitted to the backside, to the front surface, a reflection layer was deposited onto the back of the substrate. Aluminum was used as the reflection layer and Al was deposited on the sample followed by Ti evaporation for firm adhesion of the reflection layer to the substrate. The light extraction efficiency was enhanced 52 % by adoption of the Ti-Al reflection layer.

• Mycobiology
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• v.41 no.1
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• pp.63-66
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• 2013

This study was conducted to identify a suitable color of light for development of the fruit body in Hypsizygus marmoreus. To accomplish this, samples were irradiated with blue (475 nm), green (525 nm), yellow (590 nm), or red (660 nm) light emitting diodes (LEDs) to induce the formation of fruiting bodies after mycelia growth. The diameter and thickness of the pileus and length of stipes in samples subjected to blue LED treatment were similar to those of subjected to fluorescent light (control), and the lengths of the stipes were highest in response to treatment with the red LED and darkness. The commercial yields of plants subjected to blue and green LED treatment were similar to those of the control. In conclusion, cultivation of H. marmoreus coupled with exposure to blue LED is useful for inducing high quality fruit bodies as well as higher levels of ergosterol, DPPH radical scavenging activity, total polyphenol content and reducing power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.853-858
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• 2008

The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.

• Resources Recycling
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• v.29 no.1
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• pp.81-88
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• 2020

Recovery of gallium and indium from waste light emitting diodes has been emphasized gradually owing to high content of gallium and indium. This study was established the recovery of gallium (Ga³⁺) and indium (In³⁺) from waste gallium nitride was contained in waste light-emitting diodes. The procedure was divided into the following steps; characteristic analysis, alkaline roasting, and leaching. In characteristic analysis part, the results were used as a theoretical basis for the acid leaching part, and the chemical composition of waste light emitting diodes is 70.32% Ga, 5.31% Si, 2.27% Al and 2.07% In. Secondly, with reduction of non-metallic components by alkaline roasting, gallium nitride was reacted into sodium gallium oxide, in this section, the optimal condition of alkaline roasting is that the furnace was soaked at 900℃ for 3 hours with mixing Na₂CO₃. Next, leaching of waste light emitting diodes was extremely important in the process of recovery of gallium and indium. The result of leaching efficiency was investigated on the optimal condition accounting for the acid agent, concentration of acid, the ratio of liquid and solid, and reaction time. The optimal condition of leaching procedures was carried out for 2.0M of HCl liquid-solid mass ratio of 30 ml/g in 32minutes at 25℃ and about 96.88% Ga and 96.61% In were leached.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.54-55
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• 2001

Recently, there has been much interests in InGaN/GaN multiple-quantum-well (MQW) structures due to their applicability as optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes [1]. Their ultrafast and physical properties are also of significant interests. Anomalously large acoustic phonon oscillations have been observed using ultrafast lasers in InGaN MQWs [2]. In this study, we have peformed femtosecond pump-probe experiments in the reflection geometry on 5 periods InGaN/GaN MQW LED structure with well width of 20$\AA$ and barrier width of 100$\AA$ at room temperature. (omitted)