• 대한금속재료학회지
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• 제48권11호
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• pp.1035-1040
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• 2010

The research efforts on GaN-based light-emitting diodes (LEDs) keep increasing due to their significant impact on the illumination industry. Surface mount technology (SMT) is widely used to mount the LED packages for practical application. In surface mount soldering both the device body and leads are intentionally heated by a reflow process. We studied on the effects of multiple reflows on microstructural variation and joint strength of the solder joints between the LED package and the substrate. In this study, Pb-free Sn-3.0Ag-0.5Cu solder and a finished pad with organic solderability preservatives (OSP) were employed. A $Cu_6Sn_5$ intermetallic compound (IMC) layer was formed during the multiple reflows, and the thickness of the IMC layerincreased with an increasing number of reflows. The shear force decreased after three reflows. From the observation of the fracture surface after a shear test, partially brittle fractures were observed after five reflows.

• 한국재료학회지
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• 제31권3호
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• pp.132-138
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• 2021

Electrochromic devices (ECDs) have been drawing great attention due to their high color contrast, low power consumption, and memory effect, and can be used in smart windows, automatic dimming mirrors, and information display devices. As with other electronic devices such as LEDs (light emitting diodes), solar cells, and transistors, the mechanical flexibility of ECDs is one of the most important issue for their potential applications. In this paper, we report on flexible ECDs (f-ECDs) fabricated using an all-in-one EC gel, which is a mixture of electrolyte and EC material. The f-ECDs are compared with rigid ECDs (r-ECDs) on ITO glass substrate in terms of color contrast, coloration efficiency, and switching speed. It is confirmed that the f-ECDs embedding all-in-one gel show strong blue absorption and have competitive EC performance. Repetitive bending tests show a degradation of electrochromic performance, which must be improved using an optimized device fabrication process.

• 농업생명과학연구
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• 제53권3호
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• pp.147-157
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• 2019

In this study, we tried to find out the most appropriate pre-processing method and to verify the feasibility of developing a low-price sensing system for predicting the hardy kiwis sugar content based on VNIRS and subsequent spectral analysis. A total of 495 hardy kiwi samples were collected from three farms in Muju, Jeollabukdo, South Korea. The samples were scanned with a spectrophotometer in the range of 730-2300 nm with 1 nm spectral sampling interval. The measured data were arbitrarily separated into calibration and validation data for sugar content prediction. Partial least squares (PLS) regression was performed using various combinations of pre-processing methods. When the latent variable (LV) was 8 with the pre-processing combination of standard normal variate (SNV) and orthogonal signal correction (OSC), the highest R2 values of calibration and validation were 0.78 and 0.84, respectively. The possibility of predicting the sugar content of hardy kiwi was also examined at spectral sampling intervals of 6 and 10 nm in the narrower spectral range from 730 nm to 1200 nm for a low-price optical sensing system. The prediction performance had promising results with R2 values of 0.84 and 0.80 for 6 and 10 nm, respectively. Future studies will aim to develop a low-price optical sensing system with a combination of optical components such as photodiodes, light-emitting diodes (LEDs) and/or lamps, and to locate a more reliable prediction model by including meteorological data, soil data, and different varieties of hardy kiwi plants.

• 센서학회지
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• 제33권5호
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• pp.274-287
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• 2024

Chemiresistors play a crucial role in numerous research fields, including environmental monitoring, healthcare, and industrial safety, owing to their ability to detect and quantify gases with high sensitivity and specificity. This review provides a comprehensive overview of the recent advancements in photoactivated chemiresistors and emphasizes their potential for the development of highly sensitive, selective, and low-power gas sensors. This study explores a range of structural configurations of sensing materials, from zero-dimensional quantum dots to three-dimensional, porous nanostructures and examines the impact of these designs on the photoactivity, gas interactions, and overall sensor performance-including gas responses and recovery rates. Particular focus is placed on metal-oxide semiconductors and the integration of ultraviolet micro-light emitting diodes, which have gained attention as key components for next-generation sensing technologies owing to their superior photoactivity and energy efficiency. By addressing existing technical challenges, such as limited sensitivity, particularly at room temperature (~22℃), this paper outlines future research directions, highlighting the potential of photoactivated chemiresistors in developing high-performance, ultralow-power gas sensors for the Internet of Things and other advanced applications.

• 한국결정성장학회지
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• 제16권4호
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• pp.162-165
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• 2006

혼합소스 HVPE(hydride vapor phase epitaxy) 방법으로 InGaN/AlGaN의 이종접합구조(heterostructure)의 LED (light emitting diode)를 선택성장(SAG : selective area growth)하였다. InGaN/AlGaN 이종접합구조를 혼합소스 HVPE로 연속 성장하기 위하여 새로운 디자인의 multi-sliding boat를 도입하였다. SAG-InGaN/AlGaN LED의 상온 EL(electroluminescence) 특성은 주입전류가 20mA일 때 중심파장은 425nm였다. Multi-sliding boat를 이용한 혼합소스 HVPE 방법이 질화물 반도체 LED를 성장하는 유용한 방법이 될 수 있음을 확인하였다.

• Journal of Periodontal and Implant Science
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• 제54권1호
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• pp.13-24
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• 2024

Purpose: This study investigated the adjunctive effect of light-emitting diodes (LEDs) in the treatment of experimental periodontitis. Methods: Experimental periodontitis was induced by placing ligatures around the mandibular second, third, and fourth premolars of 6 beagles for 3 months. After ligature removal, periodontitis progressed spontaneously for 2 months. The animals' hemimandibles were allocated among the following 3 groups: 1) no treatment (control), 2) scaling and root planing (SRP), and 3) SRP with LED irradiation at 470-nm and 630-nm wavelengths (SRP/LED). The probing pocket depth (PPD) and gingival recession (GR) were measured at baseline, 6 weeks, and 12 weeks. The clinical attachment level (CAL) was calculated. After 12 weeks, histological and histomorphometric assessments were performed. The distances from the gingival margin to the apical extent of the junctional epithelium (E) and to the connective tissue (CT) attachment were measured, as was the total length of soft tissue (ST). Results: PPD and CAL increased at 12 weeks compared with baseline in the control group (6.31±0.43 mm to 6.93±0.50 mm, and 6.46±0.60 mm to 7.61±0.78 mm, respectively). PPD and CAL decreased at 12 weeks compared with baseline in the SRP group (6.01±0.59 to 4.81±0.65 mm, and 6.51±0.98 to 5.39±0.93 mm, respectively). PPD and CAL decreased at 12 weeks compared with baseline in the SRP/LED group (6.03±0.39 to 4.46±0.47 mm, and 6.11±0.47 to 4.78±0.57 mm, respectively). The E/ST and CT/ST ratios significantly differed among the 3 groups (P<0.05). The clinical parameters and histologic findings demonstrated that 470-nm and 630-nm wavelength LED irradiation accompanying SRP could improve treatment results. Conclusions: Within the study limitations, 470 nm and 630 nm wavelength LED irradiation might provide additional benefits for periodontitis treatment.

• 생물환경조절학회지
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• 제31권1호
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• pp.14-21
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• 2022

광질은 묘의 형태를 조절하는 중요한 환경 요인 중 하나이다. warm-white와 cool-white LED의 칩에 비율이 다른 bar type를 제작하여, 백색 LED의 광질에 따른 묘의 생육을 조사하고자 연구를 수행하였다. 오이, 토마토 및 수박의 접수와 대목의 종자를 파종하여, LED를 광원으로 하는 식물공장에서 재배하였다. 처리구는 W1C0(warm-white 단독), W1C1 (warm-white:cool-white=1:1), W3C1 (warm-white:cool-white=3:1), W5C2 (warm-white:cool-white=5:2)이다. 모든 처리구에서 W1C1 처리구에서 재배한 묘목의 배축장이 가장 짧았으며, W1C0에서 재배된 묘목의 배축장이 가장 길었다. 수박 접수, 수박 대목, 그리고 토마토 대목의 배축장은 W1C1, W3C1, W5C2, W1C0 순이었으며, 이는 cool-white의 비율이 높은 순서와 같았다. 토마토 접수는 각각 W1C0과 W3C1에서 첫 번째와 두 번째로 배축이 길었고 W5C2와 W1C1에서 가장 짧았으며, 통계적 차이는 없었다. 경경은 토마토 접수, 토마토 대목 및 수박 대목을 제외하고는 큰 차이가 없었다. 토마토 접수, 토마토 대목 및 수박 대목의 줄기 직경은 W1C0에서 가장 굵었다. 오이, 수박의 접수와 대목의 지상부 생체중과 오이 접수의 지하부 생체중은 W1C1에서 가장 작았다. 본 연구를 통해 LED 광원의 다양한 비율은 묘목의 배축 신장에 크게 영향을 미치는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.114-114
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• 2009

ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• 한국세라믹학회지
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• 제41권8호
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• pp.573-577
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• 2004

Eu$^{2＋}$를 활성제로 Sr$_3$MgSi$_2$ $O_{8}$ 청색 형광체를 합성하고, Sr$_3$MgSi$_2$ $O_{8}$：Eu 청색 형광체를 InGaN의 UV chip에 도포하여 청색 LED Lamp를 제조하였다. 제조된 청색 LED Lamp는 405nm와 460nm에서 두 개의 파장을 나타내고 있다. 405nm의 파장은 InGaN의 활성영역으로부터의 radiative recombination 때문에 나타나는 피크이다. 여기에서 나오는 405nm의 발광은 본 Sr$_3$MgSi$_2$ $O_{8}$：Eu 청색 형광체의 여기원으로 사용된다 460nm에서의 발광 밴드는 Sr$_3$MgSi$_2$ $O_{8}$ 모체내에서 Eu$^{2＋}$ 이온의 radiative recombination에 의한 것이다. 발광효율이 좋은 Sr$_3$MgSi$_2$ $O_{8}$：Eu 청색 형광체를 이용하여 UV 청색 LED Lmp를 제조한 결과, 에폭시와 청색 형광체의 무게 비율이 1$.$0.202에서 가장 좋은 광도값을 얻을 수 있었다. 이때 색좌표는 CIE x=0.1417, CIE y=0.0683이었다.