• Title/Summary/Keyword: Light-emitting diodes(LEDs)

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Recent Application Technology Trends Analysis of Zinc Sulfide: Based on Patent Information Analysis (황화아연의 응용 기술 최신 동향 분석: 특허정보분석을 중심으로)

  • Lee, Do-Yeon;Kang, Hyun-Moo;Yoon, Jongman;Lee, Jeong-Gu
    • Korean Journal of Materials Research
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    • v.26 no.2
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    • pp.100-108
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    • 2016
  • Zinc Sulfide (ZnS) is one of the II-VI semiconducting materials, having novel fundamental properties and diverse areas of application such as light-emitting diodes (LEDs), electroluminescence, flat panel displays, infrared windows, catalyst, chemical sensors, biosensors, lasers and biodevices, etc. However, despite the remarkable versatility and prospective potential of ZnS, research and development (R&D) into its applications has not been performed in much detail relative to research into other inorganic semiconductors. In this study, based on global patent information, we analyzed recent technical trends and the current status of R&D into ZnS applications. Furthermore, we provided new technical insight into ZnS applicable fields using in-depth analysis. Especially, this report suggests that ZnS, due to its infrared-transmitting optical property, is a promising material in astronomy and military fields for lenses of infrared systems. The patent information analysis in this report will be utilized in the process of identifying the current positioning of technology and the direction of future R&D.

Effect of Surface Roughness of Sapphire Wafer on Chemical Mechanical Polishing after Lap-Grinding (랩그라인딩 후 사파이어 웨이퍼의 표면거칠기가 화학기계적 연마에 미치는 영향)

  • Seo, Junyoung;Lee, Hyunseop
    • Tribology and Lubricants
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    • v.35 no.6
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    • pp.323-329
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    • 2019
  • Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

Fabrication of Red LED with Mn activated $CaAl_{12}O_{19}$ phosphors on InGaN UV bare chip (InGaN UV bare칩을 이용한 $CaAl_{12}O_{19}:Mn^{4+}$ 형광체의 적색 발광다이오드 제조)

  • Kang, Hyun-Goo;Park, Joung-Kyu;Kim, Chang-Hae;Choi, Seung-Chul
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.4
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    • pp.87-92
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    • 2007
  • A $CaAl_{12}O_{19}:Mn^{4+}$ red phosphor showed the highest emission intensity at a concentration of 0.02mole $Mn^{4+}$ and the high crystallinity and luminescent properties were obtained at $1600^{\circ}C$ firing temperature for 3hr. The synthesized phosphor showed a broad emission band at 658nm wavelength. Red light-emitting diodes(LEDs) were fabricated through the integration of on InGaN UV bare chip and a 1:3 ratio of $CaAl_{12}O_{19}:Mn^{4+}$ and epoxy resin in a single package. This coated LED can be applicable to make White LEDs under excitation energy of UV LED.

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Preparation and Characterization of Swallow-Tail Terrylene Bisimide as Organic Phosphor (Swallow-Tail Terrylene Bisimide 적색 유기 형광체 제조 및 특성 연구)

  • Jung, Sung Bong;Jeong, Yeon Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.3
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    • pp.194-200
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    • 2020
  • Perylene bisimide derivatives are developed for red organic phosphor because of their advantages, such as excellent luminous efficiency and high thermal stability. Despite these advantages, they have poor solubility characteristics in organic solvents and short emission wavelength as red organic phosphor for hybrid light-emitting diodes (LEDs). In this study, we prepared terrylene bisimide using a coupling reaction and swallow-tail imide group, which has excellent solubility. The structures and properties of swallow-tail terrylene bisimide (9C) were analyzed using 1H-nuclear magnetic resonance (1H-NMR), Fourier-transform infrared (FT-IR), UV/Vis spectroscopy, and thermal gravimetric analysis (TGA). The maximum absorption wavelength of (9C) in the UV/Vis spectrum was 647 nm, and the maximum emission wavelength was 676 nm. In the TGA, (9C) demonstrated good thermal stability with less than 5 wt% weight loss up to 415℃. In the solubility test, (9C) has a good solubility of more than 5 wt% in chloroform and dichloromethane. When the compounds (9C) were mixed with PMMA (polymethly methacrylate), the films showed peaks at 680 nm in the PL spectra. The results verify the suitability of (9C) as a red organic phosphor for hybrid LEDs.

Effect of Light-emitting Diodes on Photosynthesis and Growth of in vitro Propagation in Tea Tree (Camellia sinensis L.) (LED 광질이 차나무 기내배양묘의 생육 및 광합성에 미치는 영향)

  • Im, Hyeon-Jeong;Na, Chae-Sun;Song, Chi-Hyeon;Won, Chang-O;Song, Ki-Seon;Hwang, Jung-Gyu;Kim, Do-Hyun;Kim, Sang-Geun;Kim, Hyun-Chul
    • Journal of agriculture & life science
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    • v.53 no.6
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    • pp.13-21
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    • 2019
  • The influences of light generated by LEDs on shoot growth and photosynthesis of Tea plant(Camellia sinensis L.) were evaluated. The growth characteristics were investigated after 45 days of culture under four different light qualities: fluorescent lamp, red LED, blue LED, red+blue+white LED. Shoot growth was promoted by red light, especially root length and area were further promoted under the red+blue+white LED. Also, T/R ratio and Chlorophyll content were highest in red+blue+white. Fluor Cam was used to measure the fluorescence images of the plants, inhibition of photochemical efficiency(Fv/Fm) were not changed in all treatment. However, non-photochemical quenching(NPQ) were found rapidly increasing in blue LED, these results were that blue LED were inhibit photosynthetic efficiency and must be considered for efficiently in vitro cultivation of the tea plant. The above results suggest that light qualities could be an important factor to foster in vitro growth of the species. Also, In order to produce healthy plants, it is effective to using light qualities of red+blue+white LED on in vitro culture of the tea plant. These results could be used to mass propagating shoot and produce of healthy seedling.

Development of Portable Laryngeal Stroboscope (휴대형 후두 스트로보스콥의 개발)

  • Lee, Jae-Woo;Kwon, Soon-Bok;Lee, Byung-Joo;Lee, Jin-Choon;Goh, Eui-Kyung;Chon, Kyong-Myong;Wang, Soo-Geun;Ro, Jung-Hoon
    • Journal of the Korean Society of Laryngology, Phoniatrics and Logopedics
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    • v.17 no.1
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    • pp.28-37
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    • 2006
  • Purpose: Evaluation of vocal cord vibration is very important in cases of voice disorders. There are several equipments for examining the vocal fold vibration such as laryngeal stroboscope, ultra high-speed digital imaging system, and videokymograph. Among these, laryngeal stroboscope is the most popular equipment because of easy to examine the laryngeal pathology. However, current laryngo-stroboscopes are too bulky to move and relatively expensive. The purpose of this research is to develope a portable laryngeal stroboscope of equivalent performance with the current equipments. Methods and Materials: Recently developed high luminescent white LEDs(light emitting diodes) are placed at the head of the endoscope as light sources for the CCD image sensor which is also placed at the head with imaging lens. This arrangement eliminates the bulky light source like expensive halogen or xenon lamps as well as the optical light guiding cables. The LEDs are controlled to flash in phase with the voice frequency of the examinee. The CCD captures these strobo images and converts them into video signals for examinations. Results: There was no functional differences between preexisting stroboscope and the newly developed stroboscope of this study. LED light sources and microprocessor based control circuits of the stroboscope enabled the development of flicker-less, hand-held, portable and battery-operating stroboscope. Conclusion: The developed stroboscope is cost-effective, small-sized, easy to use and very easy desirable to bring and to use in any place.

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Synthesis and Optical Properties of M-Si(Al)-O-N (M: Sr, Ca) Phosphors for white Light Emitting Diodes (백색 발광다이오드용 M-Si(Al)-O-N (M: Sr, Ca) 형광체의 합성 및 발광 특성)

  • Lee, Seung-Jae;Lee, Jun-Seong;Kim, Young-Jin
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.2
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    • pp.41-45
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    • 2012
  • Oxynitride green phosphors for white light emitting diodes (LEDs) were synthesized and their optical properties were evaluated. The N/O ratio ($\delta$) of $SrSi_2O_{2-{\delta}}N_{2+2/3{\delta}}:Eu^{2+}$ closely depended on the synthesizing conditions. The most excellent green emission (545 nm), which was assigned to the $5d{\rightarrow}4f$ transition of $Eu^{2+}$ ions, was achieved at the conditions of $1700^{\circ}C$, 5 mol% $Eu^{2+}$, and $H_2$ atmosphere. The well-developed $Ca-{\alpha}-SiAlON:Yb^{2+}$ particles with homogeneous size were obtained at m = 3 (n = 0.15) for the compound of $Ca_{0.5m-0.005}Yb_{0.005}Si_{12-(m+n)}Al_{m+n}O_nN_{16-n}$, resulting in the strong green emission at around 550 nm.

Low Resistance Indium-based Ohmic Contacts to N-face n-GaN for GaN-based Vertical Light Emitting Diodes (GaN계 수직형 발광 다이오드를 위한 N-face n-GaN의 인듐계 저저항 오믹접촉 연구)

  • Kang, Ki Man;Park, Min Joo;Kwak, Joon Seop;Kim, Hyun Soo;Kwon, Kwang Woo;Kim, Young Ho
    • Korean Journal of Metals and Materials
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    • v.48 no.5
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    • pp.456-461
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    • 2010
  • We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.

Changes of Plant Growth, Leaf Morphology and Cell Elongation of Spinacia oleracea Grown under Different Light-Emitting Diodes (발광다이오드 광원에 따른 시금치 생육, 엽 형태형성 및 세포길이 변화)

  • Lee, Myungok;Park, Sangmin;Cho, Eunkyung;An, Jinhee;Choi, Eunyoung
    • Journal of Bio-Environment Control
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    • v.27 no.3
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    • pp.222-230
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    • 2018
  • This study aimed to determine effects of light-emitting diodes on plant growth, leaf morphology and cell elongation of two cultivars ('World-star' and 'Sushiro') of Spinacia oleracea. Plants were grown in a NFT system for 25 days after transplanting (DAT) under the LEDs [White (W), Red and Blue (RB, ratio 2:1), Blue (B), Red (R) LED] under the same light intensity and photoperiod ($130{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$, 12 hours). The 'World-star' variety was significantly higher in shoot fresh and dry weights, leaf number, and leaf area than the 'Sushiro' variety. For the 'World-star' variety, the two treatments of mixed light (RB) and red light (R) showed a 35% higher shoot dry weight than that of blue light (B) and white light (W) at 25 DAT. In the 'Sushiro' variety, mixed light (RB) treatment, which had the highest shoot fresh and dry weights, showed 40% higher than the white light (W) treatment, which had the lowest shoot fresh and dry weights. Both varieties showed leaf epinasty symptom at 21 DAT only in both mixed light (RB) and red light (R), and red light (R) treatment showed significantly higher symptom than mixed light (RB), indicating the leaf epinasty is associated with red light. Microscopic observations of the cell size in the leaf center and edge parts showed that the cell density of leaf edge under the red light (R) was lower than that in leaf center, supporting previous reports that suggest an association of the cell size difference between the leaf center and edge with the leaf epinasty occurrence. Since the blue light (B) plays a role in alleviating the epinasty symptom caused by the red light (R), it seems necessary to identify the appropriate mixing ratio of the two light sources. In addition, the World-star variety seems to be more suitable for the cultivation of plant factory using LED light sources.

Backlight Unit adopting high power RGB-LEDs (고출력 RGB-LED를 사용한 Backlight 개발)

  • Lee, Han-Jin;Park, Doo-Sung;Han, Jeong-Min;Park, Jeong-Kuk;Bae, Kyung-Woon;Kim, Seo-Yoon;Kim, Yun-Ho;Lim, Young-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1038-1042
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    • 2003
  • LED(Light Emitting Diodes)를 이용한 LCD 백라이트는 현재까지 모바일용의 $2{\sim}3$ 인치정도의 소형모델에서 상용화되고있다. 현재 동종분야에서 $5{\sim}7$ 인치 이상의 중대형에서는 아직 검토나 개발단계인 것으로 파악되고 있다. LED의 특징인 장수명, 고색순도, Robustness 등의 장점에도 불구하고 광효율이나 경제적측면에서 아직 형광램프 Type 에 비해 개선점이 남아있는 것도 개발지연 이유중의 하나다. 최근에 일부 광원업체에서 소비전력 5W로 높은 출광효율을 갖는 고휘도를 가진 LED가 개발되고있다. 고색재현성을 요구하는 TV등의 민수용 디스플레이시장이 커지는 현 추세에 한 방법으로 3색의 고휘도 LED광원을 사용한 백 라이트를 개발했다. R(Red), G(Green), B(Blue)의 3색 점광원 다수를 이중도광판 구조의 장변에 일정 간격으로 배열하여 최종 출사면에서 백색이 되도록 소정의 구성비로 설계하였다. 점광원간의 간격으로 인해 발생되는 혼색도를 보완하기위해 광원과 출사면까지의 광경로를 점광원이 아닌 튜브형의 형광광원 사용시보다 일정량 길게 설계해야 되는데, 이것으로 인해 출광효율이 형광램프구조에 비해 떨어지는 결과로 나타났다. 본 연구에서는 17인치 모니터구조의 백라이트에서 색재현성 105%와 소비전력 67W에서 표면휘도 $2000cd/m^2$ 정도를 달성하였다.

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