• Journal of Sensor Science and Technology
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• v.24 no.5
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• pp.342-347
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• 2015

We introduce an indoor broadcasting system using light-emitting diode (LED) lamps coupled with a 220 V power line. Two couplers connected to the power line constitute a power line communication (PLC) link. The transmission path from an LED lamp to a photodetector forms a visible light communication (VLC) link in free space. When the LED lamp is coupled to the power line, a composite PLC-VLC link is formed, making it possible to transmit a VLC signal beyond line-of-sight. In experiments, a 4 kHz analog signal modulated with a 100 kHz carrier was sent to the power line by a PLC coupler, and LED lamps coupled to the power line detected the signal and radiated it to multiple VLC receivers in the room. This configuration is useful in expanding an indoor VLC sensor network to adjacent rooms or constructing a voice broadcasting system in a building or apartments with existing power lines.

• Journal of Satellite, Information and Communications
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• v.11 no.1
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• pp.32-36
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• 2016

In this paper, a transceiver of VLC (Visible Light Communication) using LED white lighting has been implemented. We analyzed differences between conventional wireless communication and VLC with high-speed data transmission in a variety of environments, and confirmed symbols which passed through a channel using QAM. In order to get a high data rate, we found some variables that should be considered essentially though experiments. In addition, we set a bandwidth and found an optimal gain according to the distance between transmitter and receiver. We analyzed proposed system model through Labview and finally showed a system performance and to efficient data transmission and detection for VLC, we apply the orthogonal sequences to VLC system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.193-194
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• 2009

This report makes an important correction to estimating angular dependent emission pattern of Organic Light-Emitting Diodes (OLEDs). Today, experiments on measuring angular light intensity of OLEDs are conducted without considering the difference between the view angle identified by photodiode and the actual angle being measured. ITO-TPD-$Alq_3$-LiF-Al Organic Light-Emitting Diode was used to find out the degree of the error. In this case, the difference in average was about $1^*$, which is highly significant. Since the difference varies from case to case, the need for adjustment must be evaluated for each case.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1587-1590
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• 2006

Through the engineering of recombination region and energy transfer in organic light emitting device, blue and red light emitting device with good color stability has been successfully obtained. A Color control layer (CCL), which emits green light through the energy transfer from the emission layers, has been introduced into the blue and red light emitting device for RGB white OLED. The RGB white OLED showed the current efficiency of 13 cd/A and the CIE coordinates of (0.33, 0.38) at $1000\;cd/m^2$. The device exhibited very stable spectrum with respect to operating current density and the CIE coordinates varied from (0.34, 0.38) to (0.31, 0.37) for $100-22000\;cd/m^2$.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.441-443
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• 1995

A new optical-resistive voltage divider, which consists of light emitting diode, optic fiber, PIN-photo diode and a high qualify shielding resistive divider, whose total response time is 7.35 [ns], has been obtained. The optical to electrical signal converter was constructed with GaAsP series light emitting diode. The response characteristics have been verified by applying the Marx impulse voltage generator experimentally. Comparing with the performance of conventional resistive voltage divider, the characteristics of the proposed optical-resistive voltage divider are more excellent in step response and less sensitive to electromagnetic interference.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.1-3
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• 2002

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1050-1053
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• 2004

Many organic materials have been synthesized and extended efforts have been made to obtain high performance electroluminescence(EL) devices, since the first report of the light-emitting diodes based on Alq3. BECCP[bis(3-N-ethylcarbazolyl)cyanoterephthalidene] is a new luminescent material having cyano as an electron acceptor part and carbazole moiety as an electron donor part. The BECCP material shows blue PL and EL spectra of the device at about 480nm and in the ITO/BECCP/Al device shows typical rectifying diode characteristics. We have introduced Alq3 between the electrode and BECCP, and obtained more intensive rectifying diode characteristics in forward and reverse bias.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.35-38
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• 2003

Polymer light emitting diode (PLED) with an ITO/MEH-PPV/Al structure were prepared by spin coating method on the ITO (indium tin oxide)/glass substrates, using poly(2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene (MEH-PPV) as the light emitting material. The dependence of heat treatment on the electrical and optical properties for the prepared PLED samples were investigated. The luminance decreased greatly from 630 cd/$\m^2$ to 280 cd/$\m^2$ at 10V input voltage as the heating temperature increased from $65^{\circ}C$ to $170^{\circ}C$. In addition, the luminance efficiency was found to be about 2 lm/W for the sample heat treated at $65^{\circ}C$. These results may be related to the interface roughness and/or the formation of an insulation layer, which is caused by the reaction between electrode and MEH-PPV organic luminescent film layer.