• Journal of the Society of Cosmetic Scientists of Korea
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• v.41 no.4
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• pp.325-331
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• 2015

Skin is exposed to sunlight or artificial indoor light on a daily. The reached solar light on the earth surface consist of 50% visible light and 45% infrared (IR) except for ultra violet (UV). The negative effects of UV including UVB and UVA have been steadily investigated within the last decades. However, little is known about the effects of visible or IR light. In this study, we irradiated human dermal fibroblasts using light emitting diode (LED) to investigate the optimal parameter for enhancing cell growth and collagen synthesis. We found that red of 630 nm and green of 520 nm enhance the cell proliferation, but irradiation with purple and blue light exerts toxic effects. To examine the response of irradiation time and light intensity on the fibroblasts, cells were exposed to red or green light with intensities from 0.05 to $0.75mW/cm^2$. Procollagen secretion was increased of 1.4 fold by 10 min irradiation, while 30 min treatment decreased the collagen synthesis of dermal fibroblasts. Treatment with red of $0.3mW/cm^2$ and green of 0.15 and $0.3mW/cm^2$ resulted in enhancement of collagen mRNA. Lastly, we investigated the combinatorial effect of red and green light on dermal fibroblasts. The sequential irradiation of red and green light is an efficient way for the purpose of the increase in the number of fibroblasts than single light treatment. On the other hand, the exposure of red light alone was more effective method for enhancing of collagen secretion. Our study showed that specific light parameters accelerated cell proliferation, gene expression and collagen secretion on human dermal fibroblasts. In conclusion, we demonstrate that light exposure with specific parameter has beneficial effects on the function of dermal fibroblasts, and suggests the possibility of its cosmetically and clinical application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.351-359
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• 2015

Next-generation displays should be transparent and flexible as well as having high resolution and frame number. The main factor for active matrix organic light emitting diode and next-generation displays is the development of TFTs (thin-film transistors) with high mobility and large area uniformity. The TFTs used for transparent displays are mainly oxide TFT that has oxide semiconductor as channel layer. Zinc-oxide based substances such as indium-gallium-zinc-oxide has attracted attention in the display industry. In this paper, the mobility improvement of low cost oxide TFT is studied for fast operating next-generation displays by overcoming disadvantages of amorphous silicon TFT that has low mobility and poly silicon TFT that requires expensive equipment for complex process and doping process.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.492-498
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• 2012

A hyper branched 10-butylphenothiazine with in-situ thermally curable methacrylate (1,3,5-tris-[$\{$10-Butyl-3-(4-(2-methyl-acryloyloxy)-phenyl)-7-yl-10H-phenothiazine$\}$]-benzene, (tris-PTMA)) was synthesized successfully. From the TGA thermogram of tris-PTMA was thermally stable up to $336^{\circ}C$. In the first heating scan of DSC thermogram, tris-PTMA showed glass transition temperature (Tg) at $140^{\circ}C$ and broad endothermic process in the region of $144-179^{\circ}C$, which is thermally curing temperature. In the second heating process, $T_g$ exhibited at $158.7^{\circ}C$ and endothermic process was not observed. Thermally cured tris-PTMA showed no big change in the UV-visible spectrum after washing with organic solvent such as methylene chloride, chloroform, toluene, indicating that thermally cured film was very good solvent resistance. Thermally cured tris-PTMA was electrochemically stable and the HOMO energy level of tris-PTMA was -5.54 eV. The maximum luminance efficiency of double layer structured polymer light-emitting diode based on in-situ thermally cured tris-PTMA was 0.685 cd/A at 16.0 V, which was higher than that of the device without thermally cured tris-PTMA (0.348 cd/A at 15.0 V).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.4
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• pp.385-390
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• 2012

A radial heat sink, adopted to LED(light emitting diode) downlight, was optimized. Discrete transfer radiation model (DTRM) was used to calculate radiation heat transfer, and numerical model was verified with experimental results. The effects of number of fin, long fin length and middle fin length on overall thermal resistance and radiation heat transfer were analyzed. As the emissivity increased, thermal resistance decreased due to the increment of radiation heat transfer. The radial heat sink was optimized and optimum number of long fins is 19~28, optimum length of long fin is about half of radius of heat fink and optimum fin ratio is 0.4~0.7.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.238-238
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• 2012

Ag (silver)의 일함수는 T-OLED (Top Emission Organic Light Emitting Diode)의 전극소자로 사용하기에는 다소 낮다는 단점이 있다(~4.3 eV). 이러한 단점을 해결하기 위한 대안으로 Ag 박막의 표면을 플라즈마 처리, UV 처리 및 열처리를 통하여 일함수를 높이는 연구가 진행 되어왔다(>5.0 eV). 하지만 현재의 대부분 연구는 후 처리된 박막의 일함수에 초점을 맞춰 연구가 진행 되어 박막의 nano-mechanical property에 대한 연구는 매우 부족하다. 따라서 본 논문에서는 AgOx 박막의 nano-mechanical property에 초점을 맞춰 분석을 실시하였다. 연구에 사용된 샘플은 Ag 박막을 유리기판 위에 rf-magnetron sputter 장치를 이용하여 100 W의 power로 150 nm 두께로 증착하였다. 증착된 Ag 박막은 $O_3$ 발생 UV 램프를 이용하여, 다양한 시간동안 UV 처리하였다(0~9분). 증착된 샘플은 Four-point probe, nanoindenter 장비를 이용하여 nano-mechanical property를 분석하였다. 실험 결과 UV 처리 시간이 0, 1분에서 면저항이 0.16, 0.50 ${\Omega}$/sq로 급격한 변화가 나타났으나, 반면 3분 이후 9분의 샘플의 경우, 0.55 ${\Omega}$/sq에서 0.24, 0.20, 0.15 ${\Omega}$/sq로 감소하여 전기적 특성변화를 볼 수 있었다. 또한 nanoindenting 결과 UV 처리한 박막의 극 표면 경도 값의 변화는 0~5분 처리한 샘플의 경우, 물리적인 경도가 증가하는 형태를 보이며 UV 처리를 5분간 했을때 7.89 GPa로 최고의 경도를 가진다. 그 이후부터는 6.97, 3.46 GPa의 결과로 박막의 경도가 감소되는 결과를 얻었다. 이러한 결과로부터 Ag 박막의 후처리에 따른 Ag 물질의 산화 및 결정상태에 따라 박막 내에 존재하는 residual stress를 분석할 수 있다.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.1
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• pp.137-144
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• 2014

In this paper, we propose the histogram matching-based power reduction technique considering the perceptual image quality. The conventional methods cannot analyze the clipping error of an image, and hence, they significantly degrade the image quality when pixels with the clipping error are concentrated on small area. The proposed method generates histograms for various images with different characteristics, and it calculates and stores the optimal clipping rate in a database. Then, it compares the histograms with that of an input image, and selects the histogram and clipping rate with the minimum difference to prevent the image quality degradation. In the experimental results, the proposed method improved the average PSNR and SSIM by up to 15.795 dB and 0.036, compared with the conventional methods.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.19-26
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• 2010

We found that saturated water vapor pressure is the most dominant stress factor for the degradation phenomenon in the package for high-power phosphor-converted white light emitting diode (high power LED). Also, we proved that saturated water vapor pressure is effective acceleration stress of LED package degradation from an acceleration life test. Test conditions were $121^{\circ}C$, 100% R.H., and max. 168 h storage with and without 350 mA. The accelerating tests in both conditions cause optical power loss, reduction of spectrum intensity, device leakage current, and thermal resistance in the package. Also, dark brown color and pore induced by hygro-mechanical stress partially contribute to the degradation of LED package. From these results, we have known that the saturated water vapor pressure stress is adequate as the acceleration stress for shortening life test time of LED packages.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.324-329
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• 2018

Red phosphor in glasses (PiGs) for automotive light-emitting diode (LED) applications were fabricated with 620-nm $CaAlSiN_3:Eu^{2+}$ phosphor and Pb-free silicate glass. PiGs were synthesized and mounted on high-power blue LED to make a monochromatic red LED. PiGs were simple mixtures of red phosphor and transparent glass powder. After being fabricated with uniaxial press and CIP at 300 MPa for 20 min, the green bodies were thermally treated at $550^{\circ}C$ for 30 min to produce high dense PiGs. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30% phosphor had a full sintered density. Changes in photoluminescence spectra and color coordination were studied by varying the thickness of plates that were mounted after optical polishing. As a result of the optical spectrum and color coordinates, PiG plate with $210{\mu}m$ thickness showed a color purity of 99.7%. In order to evaluate the thermal stability, the thermal quenching characteristics were measured at temperatures of $30{\sim}150^{\circ}C$. The results showed that the red PIG plates were 30% more thermally stable compared to the AlGaInP red chip.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.280.1-280.1
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• 2016

Generally InGaN/GaN green light emitting diode (LED) exhibits the low quantum efficiency (QE) due to the large lattice mismatch between InGaN and GaN. The QE of InGaN-based multiple quantum wells (MQWs) is drastically decreased when an emission wavelength shifts from blue to green wavelength, so called "green gap". The "green gap" has been explained by quantum confined Stark effect (QCSE) caused by a large lattice mismatch. In order to improve the QE of green LED, undoped graded short-period InGaN/GaN superlattice (GSL) and Si-doped GSL (SiGSL) structures below the 5-period InGaN/GaN MQWs were grown on the patterned sapphire substrates. The luminescence properties of InGaN/GaN green LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensity of SiGSL sample measured at 10 K shows stronger about 1.3 times compared to that of undoped GSL sample, and the PL peak wavelength at 10 K appears at 532 and 525 nm for SiGSL and undoped GSL, respectively. Furthermore, the PL decay of SiGSL measured at 10 K becomes faster than that of undoped GSL. The faster decay for SiGSL is attributed to the increased wavefunction overlap between electron and hole due to the screening of piezoelectric field by doped carriers. These PL and TRPL results indicate that the QE of InGaN/GaN green LED with GSL structure can be improved by Si-doping.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.1
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• pp.245-251
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• 2015

In this paper, we present a design of PWM-controlled driving device for backlights in LED systems. The system can control either the brightness of the entire screen of backlights of LCD driven by LED or illumination or contrast of each partial segment of the entire screen. The PWM-controlled driving device includes the shift register that shifts the series data according to the clock signal prior to the generation of parallel data. It is also is comprised of a number of registers, a number of counters, a number of comparators, and a number of synchronizing gates (producing the PWM-controlled signals). The proposed device for backlights in LED systems can generate the PWM-controlled signal with a high degree of resolution without the increase of clock frequency. It also contains the PWM-controlled circuit that disperses and restrains the quantized noise.