• Title/Summary/Keyword: Light-emitting Diode

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Zn Diffusion using by Ampoule-tube Method into n-type $GaAs_{0.60}P_{0.40}$ and the Properties of Electroluminescence (Ampoule-tube 방식을 이용한 n-type $GaAs_{0.60}P_{0.40}$에 Zn 확산과 전계 발광 특성)

  • Kim, Da-Doo;So, Soo-Jin;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.08a
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    • pp.59-62
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    • 2003
  • Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

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A Study on Thermal Performance of an Impinging Cooling Module for High Power LEDs (고출력 LED에 적용한 분사냉각모듈의 열성능에 관한 연구)

  • Lee, Dong Myung;Park, Sang Hee;Kim, Dongjoo;Kim, Kyoungjin
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.1
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    • pp.13-19
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    • 2012
  • Thermal performance of an impinging cooling module for 150 W class high power LEDs have been investigated numerically and experimentally. Parametric studies were performed to compare the effect of several design parameters such as nozzle number, nozzle spacing, coolant flow rate, and impinging distance. The experiments were also carried out in order to validate the numerical results and the comparison between the experimental and numerical results showed good agreement. It is found that the overall thermal resistance of impinging cooling module strongly depends on the nozzle number, nozzle spacing, flow rate, and impinging distance. This results showed the optimized operating condition when number of nozzles is 25, nozzles spacing is 4mm, flow rate is 2.70 lpm, distance between nozzles and impinging surface is 2 mm.

Development of Optical Pickup for ElectroAcoustic Guitar (일렉트로어쿠스틱 기타용 광 픽업의 개발)

  • Shin, Bong-Hi;Park, Young-Woo
    • Journal of the Korean Society for Precision Engineering
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    • v.31 no.5
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    • pp.417-422
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    • 2014
  • A guitar pickup is a transducer that converts string vibration to an electrical signal. The magnetic and piezo pickups are the most commonly used for the respective electric and electroacoustic guitars. The magnetic pickups are prone to magnetic interference between the steel strings and permanent magnets, while the piezo ones are not free from signal inference between the strings. Thus, this paper presents the development of an optical pickup for the electroacoustic guitar. The proposed optical pickup has the top-to-bottom structure. It uses two of Infrared (IR) Light Emitting Diode (LED) and one photodetector. The developed optical pickup is subjected to the evaluation with commonly used piezoelectric pickup. It becomes obvious that SNR with the optical pickup is increased by 45 percent in average, compared with the piezoelectric pickup. It can be concluded that the developed optical pickup has a potential to be applied to the acoustic guitar.

The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/GaN Multi-layers (MOCVD 성장조건이 InN/GaN 다층박막의 발광세기에 미치는 영향)

  • Kim, Hyeon-Su;Lee, Jeong-Ju;Jeong, Sun-Yeong;Lee, Jeong-Yong;Lin, J.Y.;Jiang, H.X.
    • Korean Journal of Materials Research
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    • v.12 no.3
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    • pp.190-194
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    • 2002
  • InN/GaN multi-layers were grown by metalorganic chemical vapor deposition(MOCVD) in order to get the appropriate structure for an high power blue-green light emitting diode(LED), and effects of growth conditions (growth temperature, pressure, and $trimethylindium(TMIn)-NH_3-N_2\; flow\; rare)$ on the integrated photoluminescence (PL) intensity and PL peak energy in InN/GaN multi-layers were investigated. The optimized growth conditions with the highest integrated PL intensity for InN/GaN multi-layers were obtained: the growth temperature at $780^{\circ}C$, the growth pressure at 325 Torr, the TMIn flow rate with 150 $m\ell$/min, the $NH_3$flow rate with 3.2 ι/min, and $N_2$ flow rate with 2 ι/min.

진공상태에서의 9,10-di(2-naphthyl)anthracene (ADN) 재료의 상평형 특성 연구

  • Sim, Seop;Yun, Ju-Yeong;Kim, Jin-Tae;An, Jong-Gi;Sin, Jae-Su;Lee, Chang-Hui;Gwon, O-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.150-150
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    • 2013
  • Organic Light Emitting Diode (OLED)에 사용되는 유기발광재료 9,10-di(2-naphthyl)anthracene (ADN)의 상평형 특성을 저진공에서 고진공 조건에 따라 연구하였다. ADN재료의 지속적인 가열과 압력제어가 가능한 진공시스템에서 진공도를 변화시키면서 ADN재료의 온도변화에 따른 상전이 현상을 확인하였다. 본 연구장비의 신뢰성평가를 위하여 상압에서 기존의 Differential Scanning Calorimetry (DSC) 열분석으로 측정한 ADN의 melting point와 비교하였고 각각의 진공조건에서 3회 반복 측정하여 장비신뢰성을 검증하였다. 연구결과, 0.1 Torr에서부터는 상압의 경우와 달리 ADN이 승화하는 것을 확인하였고, 예상대로 진공도가 높아질수록 상전이가 시작되는 온도가 낮아지는 것을 알 수 있었다. 이러한 결과는 기존의 DSC열분석으로는 확인할 수 없었던 고진공에서의 유기재료의 상전이 현상을 관측하였다는데 큰 의미가 있다. 향후, 이러한 방법을 활용한 고진공에서의 유기재료의 상전이 특성 관측은 유기재료를 이용한 진공 증착공정방법의 최적화와, 다양한 유기재료의 열안정성 특성 파악에 도움이 될 것으로 기대가 된다.

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Flexible Thin Film Encapsulation and Planarization Effectby Low Temperature Flowable Oxide Process

  • Yong, Sang Heon;Kim, Hoonbea;Chung, Ho Kyoon;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.431-431
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    • 2013
  • Flexible Organic Light Emitting Diode (OLED) displays are required for future devices. It is possible that plastic substrates are instead of glass substrates. But the plastic substrates are permeable to moisture and oxygen. This weak point can cause the degradation of fabricated flexible devices; therefore, encapsulation process for flexible substrate is needed to protect organic devices from moisture and oxygen. Y.G. Lee et al.(2009) [1] reported organic and inorganic multilayer structure as an encapsulation barrier for enhanced reliability and life-time.Flowable Oxide process is a low-temperature process which shows the excellent gap-fill characteristics and high deposition rate. Besides, planarization is expected by covering dust smoothly on the substrate surface. So, in this research, Bi-layer structured is used for encapsulation: Flowable Oxide Thin film by PECVD process and Al2O3 thin film by ALD process. The samples were analyzed by water vapor transmission rate (WVTR) using the Calcium test and film cross section images were obtained by FE-SEM.

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Atmospheric Pressure Plasma를 이용한 Oxide Thin Film Transistor의 특성 개선 연구

  • Mun, Mu-Gyeom;Kim, Ga-Yeong;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.582-582
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    • 2013
  • Oxide TFT (thin film transistor) active channel layer에 대한 저온 열처리 공정은 투명하고 flexibility을 기반으로하는 display 산업과 AMOLED (active matrix organic light emitting diode) 분야 등 다양한 분야에서 필요로 하는 기술로서 많은 연구가 이루어지고 있다. 과거 active layer는 ALD (atomic layer deposition), CVD (chemical vapor deposition), pulse laser deposition, radio frequency-dc (RF-dc) magnetron sputtering 등과 같은 고가의 진공 장비를 이용하여 증착 되어져 왔으나 현재에는 진공 장비 없이 spin-coating 후 열처리 하는 저가의 공정이 주로 연구되어 지고 있다. Flexible 기판들은 일반적인 OTFT (oxide thin films Transistor)에 적용되는 열처리 온도로 공정 진행시 열에 의한 기판의 손상이 발생한다. Flexible substrate의 열에 의한 기판 손상을 막기 위해 저온 열처리 공정이 연구되고 있지만 기존 열처리와 비교하여 소자의 특성 저하가 동반 되었다. 본 연구에서는 Si 기판위에 SiO2 (100)를 절연층으로 증착하고 그 위에 IZO (indium zinc oxide) solution을 spin-coating 한뒤 $250^{\circ}C$ 이하의 온도에서 열처리하였다. 저온 공정으로 인하여 소자의 특성 저하가 동반 되었으므로 소자의 저하된 특성 복원하고자 post-treatment로 고가의 진공장비가 필요 없고 roll-to roll system 적용이 수월한 remote-type의 APP (atmospheric pressure plasma) 처리를 하였다. Post-treatment로 APP를 이용하여 $250^{\circ}C$ 이하에서 소자에 적용 가능한 on/off ratio를 얻을 수 있었다.

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Electrical Characteristics of OLED using the Hetero-Electrode (이종 전극에 의한 OLED 전기적 특성 연구)

  • Lee, Jung-Ho;Suh, Chung-Ha;Jeong, Ji-Hoon;Kim, Young-Kwan;Kim, Young-Sik;Kim, Yeoung-Chan
    • Journal of the Korean Applied Science and Technology
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    • v.21 no.4
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    • pp.274-278
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    • 2004
  • In this study, hetero-electrode structures have been fabricated to increase luminescence efficiency. The presence of a thin layer of Sn or Ag at the organic-aluminum interface enhanced both electron injection efficiency and electroluminescence when compared to OLEDs using homogeneous electrode. In this paper, the effect of the cathode using Sn/Al hetero electrode structure is observed. Electric properties of the OLED using Sn/Al hetero cathode are improved in comparison of only Al cathode. The hetero-electrode existing different energy level induces the advanced structure of OLED can accumulate electron density. The luminescence efficiency of OLED with Sn/Al of Ag/Al cathode is higher because of their higher electron injection efficiency. And, the turn on voltage of the OLED device using Sn thin layer is lowest as about 10 V.

Selection of Heater Location in Linear Source for OLED Vapor Deposition (OLED 증착을 위한 선형증발원 히터 위치선정)

  • Joo, Young-Cheol;Han, Choong-Hwan;Um, Tai-Joon;Lee, Sang-Wook;Kim, Kug-Weon;Kwon, Kye-Si
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.6
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    • pp.515-518
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    • 2008
  • Organic light emitting diode(OLED) is one of the most promising type of future flat panel display. A linear source is used to deposite organic vapor to a large size OLED substrate. An electric heater which is attached on the side of linear source heats the organic powder for the sublimation. The nozzle of heater, which is attached at the top of the linear source has an optimal temperature. An numerical analysis has been performed to find optimal heater position for the optimal nozzle temperature. A commercial CFD program, FLUENT, is used on the analysis. Two-dimensional and three-dimensional analysis have been performed. The analysis showed that the heater should be attached at the outer side of crucible wall rather than inner side of housing, which was original design. Eighteen milimeter from the top of the linear source was suggested as the optimal position of heater. Improving thermal performance of linear source not only helps the uniformity of organic vapor deposition on the substrate but also increase productibity of vapor deposition process.

Aerosol Synthesis of Gd2O3:Eu/Bi Nanophosphor for Preparation of Photofunctional Pearl Pigment as Security Material

  • Jung, Kyeong Youl;Han, Jang Hoon;Kim, Dae Sung;Choi, Byung-Ki;Kang, Wkang-Jung
    • Journal of the Korean Ceramic Society
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    • v.55 no.5
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    • pp.461-472
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    • 2018
  • $Gd_2O_3:Eu/Bi$ nanoparticles were synthesized via spray pyrolysis and applied for the preparation of a luminescent pearl pigment as an anti-counterfeiting material. The luminescence properties were optimized by changing the $Eu^{3+}$ and $Bi^{3+}$ concentration. Ethylene glycol was used as an organic additive to prepare the $Gd_2O_3:Eu/Bi$ nanoparticles. The highest emission intensity was achieved when the total dopant content was 10.0 at.% and the mole fraction of Bi was 0.1. The concentration quenching was mainly due to dipole-dipole interactions between the same activators, and the critical distances were 9.0 and $19.6{\AA}$ for $Eu^{3+}$ and $Bi^{3+}$, respectively. The prepared $Gd_2O_3:Eu/Bi$ powder exhibited an average size of approximately 82.5 nm and a narrow size distribution. Finally, the $Gd_2O_3:Eu/Bi$ nanophosphor coated on the surface of the pearl pigment was confirmed to have good red emission under irradiation from a portable ultraviolet light-emitting diode lamp (365 nm).