• Korean Journal of Materials Research
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• 제19권6호
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• pp.313-318
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• 2009

Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and $200^{\circ}C$ for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/$m^2$ at 11 V for the device when it was annealed at $200^{\circ}C$ for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.

• Korean Journal of Microbiology
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• 제20권1호
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• pp.21-26
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• 1982

The disinfection effects of sunlight and predacious microorganisms on enteria of Escherichia coli and Proteus vulgaris were examined in sewage water at 22 to $26^{\circ}C$. The test prganisms were disinfected by 4 to 5 logs during 6-hour a day exposure to sunlight for seven days. The effect was proportional to the light intensity and was proved to be dur to the action of the visible light of short wavelength which can transmit the soft glass of a flask glass. The predacious microorganisms decreased trhe test organisms by about 3 to 4 logs during 7 days. The complex actions of sunlight and predacious microorganisms were variable depending upon the test organisms, but the total effects of those enviromental factors were yet completely understood.

• The Transactions of The Korean Institute of Electrical Engineers
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• 제56권10호
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• pp.1823-1825
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• 2007

Based on Faraday effect, the variation of current flowing through the conductor can be encoded as that of azimuth angle of light polarization propagating through the fiber coil wound onto the conductor. The amount of current can be obtained by measuring the variation of the light intensity transformed from that of the azimuth angle through a polarization analyzer. In this paper we propose a fiber-optic current sensor system that employs a fiber polarization analyzer as a sensor interrogation device. The fiber polarization analyzer was prepared by inscribing a long-period fiber grating on a high birefringent fiber. At the fixed wavelength of 1522.5 nm, the fabricated fiber device has the polarization extinction ratio of more than 25 dB. The measurement of large current up to 600 Arms was accomplished based on a simple fiber interrogation device and the measurement output of the sensor system showed a good linearity.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.594-594
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• 2012

Al doped ZnO (AZO) thin films were deposited on textured glass substrate by magnetron sputtering method. Also, AZO films on textured glass were etched by hydrochloric acid (HCl). Average thickness of etched AZO films are 90 nm. We observed morphology of AZO film by AFM with various etchant concentration and etching time. Etched AZO films have low resistivity and high haze. The surface RMS roughness of AZO film was increased from 53.8 nm to 84.5 nm. The haze ratio was also enhanced in above 700 nm of wavelength due to light trapping effect was increased by rough AZO surface. The etched AZO films on textured glass are applicable to fabricate solar cell.

• Journal of the Optical Society of Korea
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• 제10권1호
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• pp.28-32
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• 2006

We propose a new pH-sensing scheme using a methylene blue adsorption on an optical fiber cladding surface. Interactions between the silica and hydroxyl ions of a base solution induce the surface of the silica negatively charged. The charged surface attracts the positively charged chromophores of methylene blue. As the pH of the solution is reduced, the electrostatic attraction will also be reduced. This electrostatic attraction can change the transmitted light intensity of the cladding mode, since the boundary condition changes. We also carried out a simulation to verify the effect from external refractive index change around a long-period fiber grating. Our results confirm that the wavelength shift by external refractive index change is negligible compared to the transmitted light intensity variation of the cladding mode. By using a long-period grating pair, we can detect the cladding mode transmittance variations. Experimentally, we showed the possibility of pH sensing in the $1.5{\mu}m$ infrared region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.58-59
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• 2007

We have fabricated top-emission. organic ligth-emitting diodes in a structure of Glass/Al/2-TNATA/TPD/$Alq_3$/LiF/Al/Ag. By varying a film thickness of 2-TNATA and TPD, current efficiency, luminance efficiency, and viewing angle dependence of the device were measured. The top device using $Alq_3$ showed electroluminescent peak wavelengths of 522nm and 505nm at $0^{\circ}$ and $60^{\circ}$ viewing angles, respectively. It is thought that a microcavity effect affects on peak wavelength position for different viewing angles.

• Journal of Sensor Science and Technology
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• 제31권1호
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• pp.12-15
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• 2022

In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a built-in transfer gate was designed and fabricated via a 0.18-㎛ standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.

• The Korean Journal of Ceramics
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• 제6권4호
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• pp.408-411
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• 2000

Although the rotation angle and its spectrum of the magneto-optical Kerr effect are physical quantities determined inherently by the material itself, we found that they can widely be designed by utilizing a one-dimensional photonic crystal with a ferromagnetic defect layer. By suitable choice of the film structure, the rotation angle at a designated narrow wavelength is resonantly enhanced up to as several hundred times larger as ordinary rotation angle of the magnetic. This is originated by the localization of light at the magnetic layer inside the film.

• Journal of Dental Anesthesia and Pain Medicine
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• 제23권4호
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• pp.229-236
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• 2023

Background: Local anesthesia has been reliably used to control pain during dental procedures and is important in pediatric dentistry. However, children occasionally complain of prolonged numbness after dental treatment, leading to several problems. Studies conducted to reverse the effect of local anesthesia using phentolamine mesylate and photobiomodulation therapy (PBM) are encouraging but limited. PBM is a type of light therapy that utilizes visible and near-infrared non-ionizing electromagnetic spectral light sources. Hence, this study used this modality to compare the reversal of local anesthesia at two different wavelengths. This study compared the effect of PBM at 660 and 810 nm wavelengths on the reversal of soft tissue local anesthesia using a diode LASER in pediatric dentistry. Method: Informed consent and assent were obtained, and the participants were then divided randomly into three groups of 20 children each: control group-without LASER irradiation, LASER irradiation at 660 nm, and LASER irradiation at 810 nm. Sixty children aged 4-8 years with deciduous mandibular molars indicated for pulp therapy were administered an inferior alveolar nerve block. After 45 min of injection, a duration that was similar to the approximate duration of treatment, they were exposed to 660- and 810-nm LASER irradiation according to their groups until reversal of local anesthesia was achieved. The control group did not undergo LASER irradiation. The reversal of the soft tissue local anesthetic effect was evaluated using palpation and pin prick tests every 15 min, and the LASER irradiation cycle continued until reversal of the soft tissue local anesthesia was achieved. Results: A significant reduction of 55.5 min (27.6%) in the mean soft tissue local anesthesia reversal time was observed after the application of 810 nm wavelength PBM and 69 min (34.7%) after 660 nm wavelength LASER irradiation. Conclusion: PBM with a 660 nm wavelength was more effective in reducing the mean soft tissue local anesthesia reversal duration, and thus can be used as a reversal agent for soft tissue local anesthesia in pediatric dentistry.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.280.1-280.1
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• 2016

Generally InGaN/GaN green light emitting diode (LED) exhibits the low quantum efficiency (QE) due to the large lattice mismatch between InGaN and GaN. The QE of InGaN-based multiple quantum wells (MQWs) is drastically decreased when an emission wavelength shifts from blue to green wavelength, so called "green gap". The "green gap" has been explained by quantum confined Stark effect (QCSE) caused by a large lattice mismatch. In order to improve the QE of green LED, undoped graded short-period InGaN/GaN superlattice (GSL) and Si-doped GSL (SiGSL) structures below the 5-period InGaN/GaN MQWs were grown on the patterned sapphire substrates. The luminescence properties of InGaN/GaN green LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensity of SiGSL sample measured at 10 K shows stronger about 1.3 times compared to that of undoped GSL sample, and the PL peak wavelength at 10 K appears at 532 and 525 nm for SiGSL and undoped GSL, respectively. Furthermore, the PL decay of SiGSL measured at 10 K becomes faster than that of undoped GSL. The faster decay for SiGSL is attributed to the increased wavefunction overlap between electron and hole due to the screening of piezoelectric field by doped carriers. These PL and TRPL results indicate that the QE of InGaN/GaN green LED with GSL structure can be improved by Si-doping.