• The KIPS Transactions:PartC
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• v.11C no.2
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• pp.219-228
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• 2004

Wireless LAN(wireless Local Area Network) is constructed network environment by radio in indoors or outdoors environment and that to use electric wave or light instead of wire to client such as PC(Personal Computer), notebook, PDA in hub(Hub) in technological side. Now, among IEEE 802.11 WG(Working Group), there is TGf(Task Group F) that develop standard protocol between AP's(Access Point). In this group, proposed IAPP(Inter Access Point Protocol) to secure interoperability between AP producing in different manufacturer, this offers seamless connectivity between STA by sharing Security Context information or Layer 2 forwarding information between AP without passing through re-authentication process when STAs(Station) move by protocol to secure mobility between AP that differ in equal serve network. In this paper, I wish to suggest method that change avenue of communication of message to block information leakage that can occur at security message or WEP Key transmission between above AP, and uses public key to offer wireless area security little more.

• Korean Journal of Optics and Photonics
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• v.28 no.6
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• pp.334-338
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• 2017

This research aims at investigating science teachers' perception of the refractive index of materials, and thus achieving proper information transmission and teaching of refractive index. Specifically, we have made questionnaires on what physical factors influence the refractive index of a liquid easily available in secondary schools. It was found that 80.0% of science teachers perceived that the density has the greatest influence on the refractive index, among a variety of factors such as molecular structure, the number of molecules per unit volume, mass of each molecule, and the wavelength of light, to mention just a few. This may be due to the fact that current textbooks deal with the refraction of light based on analogy to a mechanical wave. Such a misunderstanding may lead to confusion and misunderstanding for students.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.16 no.9
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• pp.3194-3210
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• 2022

Wall obstruction is the main factor leading to the non-line of sight (NLoS) error of indoor localization based on received signal strength indicator (RSSI). Modeling and correcting the path loss of the signals through the wall will improve the accuracy of RSSI localization. Based on electromagnetic wave propagation theory, the reflection and transmission process of wireless signals propagation through the wall is analyzed. The path loss of signals through wall is deduced based on power loss and RSSI definition, and the theoretical model of path loss of signals through wall is proposed. In view of electromagnetic characteristic parameters of the theoretical model usually cannot be accurately obtained, the statistical model of NLoS error caused by the signals through the wall is presented based on the log-distance path loss model to solve the parameters. Combining the statistical model and theoretical model, a hybrid model of path loss of signals through wall is proposed. Based on the empirical values of electromagnetic characteristic parameters of the concrete wall, the effect of each electromagnetic characteristic parameters on path loss is analyzed, and the theoretical model of regional path loss of signals through the wall is established. The statistical model and hybrid model of regional path loss of signals through wall are established by RSSI observation experiments, respectively. The hybrid model can solve the problem of path loss when the material of wall is unknown. The results show that the hybrid model can better express the actual trend of the regional path loss and maintain the pass loss continuity of adjacent areas. The validity of the hybrid model is verified by inverse computation of the RSSI of the extended region, and the calculated RSSI is basically consistent with the measured RSSI. The hybrid model can be used to forecast regional path loss of signals through the wall.

• Animal cells and systems
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• v.1 no.2
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• pp.371-379
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• 1997

To investigate the movement of sperm head and the role of sperm neck in forward sperm motility in the Korean striped field mouse, Apodemus agrarius coreae, the morphological characteristics of the cauda epididymal spermatozoa were examined by light microscopy and scanning and transmission electron microscopy. Spermatozoa of A. agrarius coreae were characterized by the conspicuous shape of the acrosome and the long tail compared with those of other rodents. Total length of the sperm was $133\mu{m}$. The sperm head had a curved falciform shape. The head was 8.0${\mu}$m in length, and about 4.0 ${\mu}$m in width. The shape of acrosome had an openerlike form. The sperm tail (125 ${\mu}$m) consisted of four major segments: neck (0.5 ${\mu}$m), middle piece (29.5 ${\mu}$m), and principal piece plus the end piece (95 ${\mu}$m). The outer dense fibers were arranged in a horseshoe fashion, and No. 1, 5, 6, and 9 of the outer dense fibers were larger than the others. The mitochondrial bundles of middle piece were composed of a pair of arms, which surrounded the axone of the middle piece by the 45 0 angled helical structure. The total number of mitochondrial gyres was 188. In particular, the microfilament structures existed in plasma membrane of the sperm, which was adjacent to the acrosomal region on the nuclear membrane. The segmented columns were surrounded by microfilament structures, and the microfilament bundles were adjacent to the outer membrane of the first mitochondria of middle piece. This study presents for the first time the existence of microfilament structures within the plasma membrane of sperm which is located from the adjacent acrosome region to the connecting piece in sperm neck of Korean striped field mouse, Apodemus agrarius coreae. The present result suggests that the constriction and extension of microfilament in sperm neck as well as the wave-movement of sperm tail may play a role in the movement of sperm head.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.524-530
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• 2008

Anti-Reflective (AR) thin film coatings of $SiO_2$ (n= 1.48) and $TiO_2$ (n=2.17) were deposited by ion-beam assisted deposition (IBAD) with End-Hall ion source and conventional electron beam (e-beam) evaporation to investigate the effect of deposition method on the refractive indicies (n) of the fIlms. Green-light generation using a GaAs laser diode was achieved via excitation of the second harmonic. The latter resulted from the transmission of the fundamental guided-mode wave of 1064 nm through periodically poled $LiNbO_3$. Large differences in the refractive indicies of each of the layers in the multilayer coating may improve AR performance. IBAD of $SiO_2$ reduced its refractive index from 1.45 to 1.34 at 1064 nm. Conversely, e-beam evaporation of $TiO_2$ increased its refractive index from 1.80 to 2.11. In addition, no fluctuations in absorption at the wavelength of 1064 nm were found. The results suggest that films prepared by different deposition methods can increase the effectiveness of multilayer AR coatings.

• Restorative Dentistry and Endodontics
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• v.23 no.1
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• pp.20-42
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• 1998

The present study was designed to understand the basic principles of the laser system and to assess the optimal coditions of the Nd:YAG laser irradiation system in order to expand the use of the laser system in the dental field. The laser system used in this study was a pulsed-wave output type and the power level is 9 watts. The incisors of developing rats were irradiated with the laser system explained above for 0.5, 1, and 2 seconds giving energy density 71, 167, and 215 J/$cm^2$ respectively. The rats were sacrificed just after irradiation or 10 minutes and 10 days after irradiation. The specimens were examined with the stereoscope, light microscope and transmission electron microscope. The results are as follows: 1. The tissue removal efficiency (depth of the cavity formed) is increased with the energy density after Nd:YAG laser irradiation. 2. The carbonized area is increased with the energy density. Cracks and melted appearance are seen in all kinds of the energy densities. 3. The lacunae in the damaged alveolar bone by the laser irradiation were empty, while those in the newly formed bone were occupied with the osteocytes. The damaged alveolar bone was repaired by the osteoblasts and macrophages on the periphery of the bone matrix. 4. The damaged enamel was replaced by the loose connective tissues showing many kinds of cells. The ameloblasts were differntiated on the replaced loose connective tissue. 5. The damaged dentin was repaired by the irregular dentin formed by the odontoblasts differentiated from the mesenchymal cells migrated from the pulp core.

• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.27-32
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• 2013

Based on the dispersive feature of the dielectric function of noble metals and the wave vector conservation in physics, both the plasma effect and the complex refractive index, which are profoundly correlated to the complex dielectric function and permeability, have been studied and analyzed. The condition to induce a bulk or a surface plasma in the visible region will not be satisfied, and there will be one solution for the real and the imaginary parts of the refractive index, restricting it only to region I of the complex plane. The results given in this work will aid in understanding the properties of light transmission at the metal/dielectric interface as characterized by the law of refraction in nature.

• Journal of the Korea institute for structural maintenance and inspection
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• v.24 no.6
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• pp.119-128
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• 2020

An ultrasonic multiple scattering simulation using cross-section of fine dust particles were proposed. These days, along with awareness of air pollution, social interest in fine dust is increasing. In the construction field, awareness of fine dust is increasing, and research on preparing various countermeasures is underway. The light scattering method fine dust meter currently in use is affected by environmental factors such as relative humidity, and reliability problems in terms of accuracy are continuously reported. However, the transmission of ultrasonic waves can directly reflect the physical change of the medium based on the mechanical wave. Using these advantages of ultrasonic waves, fine dust measurement simulation was performed using the scattering cross section and ultrasonic multiple scattering theory. The shape data of the fine dust particles were collected using a SEM (Scanning Electron Microscope), and a cross-section according to the fine dust particles was derived through numerical analysis. As a result of signal processing, the error for the number density corresponding to each cross-section is minimum 19, maximum 3455.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).